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检索条件"作者=MENGXiangti"
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Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT
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Rare Metals 2003年 第1期22卷 69-74页
作者: mengxiangti WANGRuipian KANGAiguo WANGJilin JIAHongyong CHENPe InstituteofMicroelectronics TsinghuaUniversityBeijing100084China InstituteofNuclearEnergyTechnology TsinghuaUniversityBeijing100084China
The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alt... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors
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Rare Metals 2004年 第2期23卷 165-170页
作者: mengxiangti KANGAiguo ZHANGXimin LIJihong HUANGQiang LIFengmei LIUXiaoguang ZHOUHongyu InstituteofNuclearEnergyTechnology TsinghuaUniversityBeijing100084China InstituteofLowEnergyNuclearPhysics BeijingNormalUniversityBeijing100875China
Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have be... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT
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Rare Metals 2004年 第4期23卷 330-339页
作者: mengxiangti ZHANGXimin WANGJilin HUANGWentiao CHENPeiyi KLAHongyong InstituteofNuclearandNewEnergyTechnology TsinghuaUniversityBeijing100084China InstituteofMicroelectronics TsinghuaUniversityBeijing100084China
The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论