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Journal of Semiconductors 2024年第8期45卷 67-73页

作者： Siyi Huang masao ikeda Feng Zhang Minglong Zhang Jianjun Zhu Shuming Zhang Jianping Liu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Key Laboratory of Nanodevices and Applications Chinese Academy of SciencesSuzhou 215123China

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this *** annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping *** concentration,resistivity and mobility were characterized by room-temperature Hall *** Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the *** hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature *** appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

关键词： p-GaN hole concentration electrical properties annealing ionization energy

Controllable step-flow growth of GaN on patterned freestanding substrate

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Journal of Semiconductors 2024年第2期45卷 46-50页

作者： Peng Wu Jianping Liu Lei Hu Xiaoyu Ren Aiqin Tian Wei Zhou Fan Zhang Xuan Li masao ikeda Hui Yang Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Advanced Research Institute Chinese Academy of SciencesShanghai 201210China University of Chinese Academy of Sciences Beijing 100049China

A new kind of step-flow growth mode is proposed,which adopts sidewall as step source on patterned GaN *** terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia *** growth mechanism is explained and simulated based on step motion *** work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps.

关键词： step-flow growth GaN terrace width step motion

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

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Journal of Semiconductors 2022年第9期43卷 81-86页

作者： Minglong Zhang masao ikeda Siyi Huang Jianping Liu Jianjun Zhu Shuming Zhang Hui Yang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting *** effects of surface chemical treatment and annealing temperature were *** optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had ***-containing metal showed~35%lower com-pared to that of single *** thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without *** current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also *** lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

关键词： GaN ohmic contact specific contact resistance

Design of an Interpolated Controller for Stabilization of a Plant with Variable Operating Condition

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Journal of Systems Engineering and Electronics 2000年第2期11卷 39-47页

作者： Yuan, Xiangyang Shi, Songjiao ikeda, masao Shanghai Jiaotong Univ Shanghai China

In this paper, the stabilization of a linear SISO plant with variable operating condition is considered. The plant is described by a linear interpolation of proper stable co-prime factorizations of the transfer functions at two representative operating points. An interpolation of the stabilizing controllers for the representative models is designed to stabilize the plant, and the necessary and sufficient condition for the plant to be stabilized by the proposed controller is presented using the Nevanlinna-Pick interpolation theory. It is shown that the class of stabilization plants via the proposed controller in the paper is larger than that by the controller in reference. An example is also given to illustrate this fact.

关键词： Closed loop control systems Control system analysis Interpolation System stability Transfer functions

Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers

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Journal of Semiconductors 2023年第5期44卷 62-68页

作者： Siyi Huang masao ikeda Minglong Zhang Jianjun Zhu Jianping Liu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Key Laboratory of Nanodevices and Applications Chinese Academy of SciencesSuzhou 215123China

A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study.22 nm p^(+)-GaN followed by 2 nm p-In_(0.2)Ga_(0.8)N was grown on p-type layers by metal-organic chemical vapor *** were then cut into squares after annealing and contact electrodes using In balls were put at the corners of the *** linearity between all the electrodes was confirmed inⅠ–Ⅴcurves during Hall measurements even with In *** samples taken from the same wafer showed small standard deviation of~4%for resistivity,Hall mobility and hole *** influence of contact layer on the electrical characteristics of bulk p-type layers was then investigated by step etching technique using inductively coupled plasma etching and subsequent Hall-effect *** values could be obtained consistently when a 28 nm non-conductive layer thickness at the surface was taken into ***,the procedures for evaluating the electrical properties of GaN-based p-type layers just using In balls proposed in this study are shown to be quick and useful as for the other conventionalⅢ–Ⅴmaterials.

关键词： GaN electrical properties ohmic contact

Fault-tolerant decentralized H-infinity control for multi-channel systems using homotopy method

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控制理论与应用（英文版） 2007年第1期5卷 77-82页

作者： Ning CHEN Weihua GUI masao ikeda School of Information Science ＆ Engineering Central South University Changsha Hunan 410083 China Graduate School of Engineering Osaka University Suita Osaka 565-0871 Japan

This paper considers a fault-tolerant decentralized H-infinity control problem for multi-channel linear time-invariant systems. The purpose is to design a decentralized H-infinity output feedback controller *** the given system and achieve a certain H-infinity performance requirement both in the normal situation and in the situation where any one of the local controllers fails. The designed problem is reduced to a feasibility problem of a set of bilinear matrix inequalities （BMIs）. An algorithm is proposed to solve the BMIs. First, the normal situation is considered where all the local controllers are functioning. The local controllers are obtained from a standard centralized H-infinity controller by using a homotopy method imposing a structural constraint progressively. Secondly, the above case is extended to the one where any one of the local controllers fails. We again use a homotopy method where the coefficient matrices of the failed controller are decreased progressively to zero. The efficiency of the proposed algorithm is demonstrated by an example.

关键词： Decentralized control H-infinity control Fault-tolerant Control BMI Homotopy method

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不确定多通道奇异大系统分散鲁棒H_∞控制

控制理论与应用 2007年第2期24卷 322-328页

作者：陈宁桂卫华 ikeda masao 中南大学信息科学与工程学院湖南长沙410083 大阪大学工学研究科

研究不确定多通道奇异系统的鲁棒分散H_∞控制问题,假定不确定性是时不变、范数有界,且存在于系统和控制输入矩阵中．主要考虑分散H_∞输出反馈控制问题．推导出了使不确定多通道奇异系统能鲁棒稳定且满足一定的性能指标的充分必要条件... 详细信息

研究不确定多通道奇异系统的鲁棒分散H_∞控制问题,假定不确定性是时不变、范数有界,且存在于系统和控制输入矩阵中．主要考虑分散H_∞输出反馈控制问题．推导出了使不确定多通道奇异系统能鲁棒稳定且满足一定的性能指标的充分必要条件,没有等式约束的非线性矩阵不等式条件,采用两步同伦法迭代来求解非线性矩阵不等式(NMI),首先,通过逐步对控制器的系数矩阵加上结构限制,计算出当确定性不存在时的标称系统的分散H_∞控制器．然后,逐步改变标称系统分散控制器的系数,计算出不确定性参数存在时的分散鲁棒控制器．在每一阶段,每一次迭代过程中,通过交替固定NMI的一个变量,使NMI转变为线性矩阵不等式(LMI)．数值例子说明了本文提出的方法的有效性．

关键词：分散H∞控制奇异系统参数不确定性同伦法非线性矩阵不等式 LMI

High quality non-rectifying contact of ITO with both Ni and n-type GaAs

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Journal of Semiconductors 2015年第5期36卷 14-18页

作者：王青松 masao ikeda 谭明代盼吴渊渊陆书龙杨辉 Key Laboratory Nano-Devices and Application Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China University of Chinese Academy of Sciences

We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32×10^-4 Ω.cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model （c-TLM） method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81×10^-6 Ω.cm^2, while that oflTO/n-GaAs is 7×10^-5Ω.cm^2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.

关键词： ITO electron beam evaporation ITO/n-GaAs specific contact resistance

A plant growth chamber system equipped with aerosol generators for studying aerosol-vegetation interactions

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Particuology 2024年第2期85卷 122-132页

作者： masao Gen Seiji Ikawa Masahiro Yamaguchi Fong Zyin Lim Takeshi Izuta I.Wuled Lenggoro Graduate School of Bio-Applications and Systems Engineering Tokyo University of Agriculture and TechnologyKoganeiTokyo184-8588Japan Institute of Multidisciplinary Research for Advanced Materials Tohoku UniversitySendai980-8577Japan Faculty of Agriculture Tokyo University of Agriculture and TechnologyFuchuTokyo183-8509Japan Graduate School of Fisheries and Environmental Sciences Nagasaki UniversityNagasaki852-8521Japan Institute of Agriculture Tokyo University of Agriculture and TechnologyFuchuTokyo183-8509 Japan Department of Applied Physics and Chemical Engineering Tokyo University of Agriculture and TechnologyKoganeiTokyo184-8588Japan Institute of Global Innovation Research Tokyo University of Agriculture and TechnologyFuchuTokyo183-8509Japan

Understanding aerosol-vegetation interactions is vital in ***,the interactions remain elusive partly due to the lack of suitable plant growth chamber ***,deposition of submicron particles on leaf surfaces is challenging due to its low deposition velocities compared to larger *** this work,we present a plant-growth chamber that was used to study the effect of sub-micron black carbon(BC)particles on the growth and photosynthesis of *** chamber system simultaneously enables the growth of multiple plants in pots and the deposition of submicron particles onto *** spraying methods assisted by ultrasonic and electrostatic forces were employed as aerosol generators to realize the particle *** flow regime inside the chamber was numeri-cally calculated to predict the transportation of aerosol particles,suggesting the optimal operating conditions of the *** gas-phase particle size distribution measurements showed that gener-ated BC particles were suspended in submicron diameter *** aerosol generators were examined in the chamber using three conductor and insulator substrates as a model of plant *** observations and spectroscopic analysis ascertained that submicron BC particles generated from our generators were deposited on all substrate *** the developed chamber system,systematic studies can be performed to advance the fundamental understanding of aerosol-vegetation interactions.

关键词： Aerosol Exposure chamber Spray drying Black carbon

Effectiveness of antibiotic prophylaxis for acute esophageal variceal bleeding in patients with band ligation: A large observational study

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World Journal of Gastroenterology 2024年第3期30卷 238-251页

作者： Chikamasa Ichita Sayuri Shimizu Tadahiro Goto Uojima Haruki Naoya Itoh masao Iwagami Akiko Sasaki Gastroenterology Medicine Center Shonan Kamakura General HospitalKamakura 247-8533KanagawaJapan Department of Health Data Science Yokohama City UniversityYokohama 236-0027KanagawaJapan TXP Research TXP Medical Co.Ltd.Chiyoda-ku 101-0042TokyoJapan Department of Clinical Epidemiology and Health Economics School of Public HealthThe University of TokyoBunkyo-ku 113-0033TokyoJapan Department of Genome Medical Sciences Project Research InstituteNational Center for Global Health and MedicineIchikawa 272-8516ChibaJapan Division of Infectious Diseases Aichi Cancer CenterNagoya 464-8681AichiJapan Department of Health Services Research Institute of MedicineUniversity of TsukubaTsukuba 305-8575IbarakiJapan

BACKGROUND Esophageal variceal bleeding is a severe complication associated with liver cirrhosis and typically necessitates endoscopic *** current standard treatment is endoscopic variceal ligation(EVL),and Western guidelines recom-mend antibiotic prophylaxis following ***,given the impro-vements in prognosis for variceal bleeding due to advancements in the management of bleeding and treatments of liver cirrhosis and the global concerns regarding the emergence of multidrug-resistant bacteria,there is a need to reassess the use of routine antibiotic prophylaxis after *** To evaluate the effectiveness of antibiotic prophylaxis in patients treated for *** We conducted a 13-year observational study using the Tokushukai medical database across 46 *** were divided into the prophylaxis group(received antibiotics on admission or the next day)and the non-prophylaxis group(did not receive antibiotics within one day of admission).The primary outcome was composed of 6-wk mortality,4-wk rebleeding,and 4-wk spontaneous bacterial peritonitis(SBP).The secondary outcomes were each individual result and in-hospital mortality.A logistic regression with inverse probability of treatment weighting was used.A subgroup analysis was conducted based on the Child-Pugh classification to determine its influence on the primary outcome measures,while sensitivity analyses for antibiotic type and duration were also *** Among 980 patients,790 were included(prophylaxis:232,non-prophylaxis:558).Most patients were males under the age of 65 years with a median Child-Pugh score of *** composite primary outcomes occurred in 11.2%of patients in the prophylaxis group and 9.5%in the non-prophylaxis *** significant differences in outcomes were observed between the groups(adjusted odds ratio,1.11;95%confidence interval,0.61-1.99;P=0.74).Individual outcomes such as 6-wk mortality,4-wk rebleeding,4-wk onset of SBP,and in-hospital mo

关键词： Esophageal varices Endoscopic hemostasis Antibiotic prophylaxis Liver cirrhosis Inverse probability of treatment weighting