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CALCULATION OF ENERGY STRAGGLING FOR FAST PROTONS

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Chinese Physics Letters 1990年第4期7卷 184-187页

作者： ma zhongquan Xinjiang Institute of Physics Academia SinicaUrumqi830011

The energy and Z2 dependences of energy straggling for fast proton beams in some of the elements have been calculated by using an effective IPM potential for light ion-atom system with Bonderup and Hvelplund’s *** re... 详细信息

关键词： formulation system elements

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公安英模精神融入公安院校思政课的实践路径

中国人民警察大学学报 2024年第9期40卷 25-30页

作者：马中全唐雪莲四川警察学院四川泸州646000

公安英模精神是中华民族伟大精神的真实写照,是弥足珍贵的精神财富。公安院校作为培养公安后备人才的主力军,理当成为传扬公安英模精神的主阵地。弘扬公安英模精神与公安院校思政课在价值功能、内容渊源、实现路径上具有高度的内在契合... 详细信息

公安英模精神是中华民族伟大精神的真实写照,是弥足珍贵的精神财富。公安院校作为培养公安后备人才的主力军,理当成为传扬公安英模精神的主阵地。弘扬公安英模精神与公安院校思政课在价值功能、内容渊源、实现路径上具有高度的内在契合性。在公安院校思政课教育教学中,需全面树立并践行“大思政课”理念,全面融入公安英模精神教育内容,全方位打造公安英模精神育人载体,全过程探索公安英模精神融入思政课教育教学的实践路径,以赋能思政课改革创新。

关键词：公安英模精神融入公安院校思政课

STOPPING POWER OF PROTON IN MONOCRYSTALLINE,POLYCRYSTALLINE AND AMORPHOUS SILICON

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Chinese Physics Letters 1990年第5期7卷 226-229页

作者： ma zhongquan LIU Jiarui ZHU Peiran Institute of Physics Academia SinicaBeijing 100080 Xinjiang Institute of Physics Academia SinicaUrumqi 830011

The allotropic effect on the electronic topping power of protons in solids was systematically determined by the nuclear resonance reaction ^(27)Al(p,γ)^(28)Si at E_(p)=774 and 992ke V in an silicon on sapphire(SOS)sa... 详细信息

关键词： solids error CRYSTAL

Fabrication and Optical Properties of Silicon Nanowires Arrays by Electroless Ag-catalyzed Etching

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Nano-Micro Letters 2011年第2期3卷 129-134页

作者： Jie Tang Jianwei Shi Lili Zhou zhongquan ma SHU-Solar PV Laboratory Department of PhysicsShanghai University

In order to realize ultralow surface reflectance and broadband antireflection effects which common pyramidal textures and antireflection coatings can't achieve in photovoltaic industry,we used low-cost and easy-made Ag-catalyzed etching techniques to synthesize silicon nanowires(Si NWs) arrays on the substrate of single-crystalline *** dense vertically-aligned Si NWs arrays are fabricated by local oxidation and selective dissolution of Si in etching solution containing Ag *** Si NWs arrays with 3 μm in depth make reflectance reduce to less than 3% in the range of 400 to 1000 nm while reflectance gradually reached the optimum value with the increasing of etching *** antireflection of Si NWs arrays are based on indexgraded mechanism:Si NWs arrays on a subwavelength scale strongly scatter incident light and have graded refractive index that enhance the incidence of light in usable wavelength ***,surface recombination of Si NWs arrays are deteriorated due to numerous dangling bonds and residual Ag particles.

关键词： Si nanowires Ag-catalyzed etching Broadband antireflection Surface recombination

Influence of surface passivation on the minority carrier lifetime, Fe-B pair density and recombination center concentration

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Chinese Science Bulletin 2010年第17期55卷 1828-1833页

作者： LI Feng ma zhongquan MENG XiaJie LU Peng YU ZhengShan HE Bo SHU-SOEN's R&D Lab Department of Physics Shanghai University Shanghai 200444 China Shanghai Solar EnerTech Corp Shanghai 200120 China

Three kinds of methods (0.08 mol/L iodine in ethanol, SiNx:H, and 40% HF) are used to passivate solar-grade Czochralski (Cz) silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers are measured using the microwave photo-conductance decay (μ-PCD) technique. Based on the measured minority carrier lifetime, it is found that the passivation quality achieved by 0.08 mol/L iodine in ethanol is the best, while that by 40% HF solution is the worst. For the identical wafer, the density distribution of Fe-B pairs is different when different passivation methods are used. When the wafers are passivated by SiNx:H, there exists a close correlation between the distribution of minority carrier lifetime and the concentration distribution of Fe-B pairs. Furthermore, for wafers with high-quality passivation, there is a strong correlation between the recombination center concentration and the Fe-B pair density. All the analyses verify that the surface passivation quality of wafers influences the measurement results of minority carrier lifetime, Fe-B pair density and recombination center concentration.

关键词：少数载流子寿命表面钝化密度分布复合中心浓度分布铁硼少子寿命

Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell

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Science China(Technological Sciences) 2013年第8期56卷 1870-1876页

作者： HE Bo WANG HongZhi LI YaoGang ma zhongquan XU Jing ZHANG QingHong WANG ChunRui XING HuaiZhong ZHAO Lei WANG DunDong Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer materials Donghua University Department of Physics Shanghai University Instrumental Analysis and Research Center Shanghai University

Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar *** microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,*** electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark *** ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,*** the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as *** the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating *** conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 ma cm 2 and 39.9%,*** the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and *** barrier height and internal electric field,which is near the surface of p-Si,can effectively be *** we can see the great photovoltaic effect.

关键词： amorphous indium-tin-oxide(a-ITO) film radio-frequency(RF) magnetron sputtering heterojunction solar cell current-voltage(I-V) characteristics

Energy Straggling Calculations Under IPM Potential

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新疆大学学报(自然科学版)(中英文) 1991年第4期 63-70页

作者： ma zhongquan (Xinjiang Institute of Physics, Acadeinia Sinica) Zhang Qin(Xinijiang Analysis and Testing Center)

By using Bonderup and Hvelplund’s formulation the energy straggling for light ions (such as H~+, He) etc) in each element has been calculated based on the IPM potential. The results obtained in this paper not only reveal a Zoscillation and energy dependence) but also give a single parameter IPM electron density function n(r) which is fitted by Hartree-Fock (HF) model. Merover, we suggest a very simple theory method for calculating energy straggling of a compound of a mixing matter with mean atomic number Z~* and adjustable parameter d~* except additivity rule, the results are in good agreement with recent experiments.

关键词： energy straggling light ions IPM potential

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连续旋涂提高钙钛矿太阳电池开路电压的研究

太阳能学报 2018年第6期39卷 1588-1594页

作者：张鑫亮马忠权刘正新上海大学理学院物理系、索朗光伏材料与器件R&D联合实验室上海200444 中国科学院上海微系统与信息技术研究所(SIMIT)新能源技术中心上海201800

在钙钛矿太阳电池的制作过程中,通过改善旋涂方法和条件,可大大提高钙钛矿吸收层的结晶性以及太阳电池的光电转换性能。与常规的一次性旋涂方法相比,采用连续二次旋涂方法制作的钙钛矿薄膜更加致密,结晶性明显提高。旋涂时前驱液和衬底... 详细信息

在钙钛矿太阳电池的制作过程中,通过改善旋涂方法和条件,可大大提高钙钛矿吸收层的结晶性以及太阳电池的光电转换性能。与常规的一次性旋涂方法相比,采用连续二次旋涂方法制作的钙钛矿薄膜更加致密,结晶性明显提高。旋涂时前驱液和衬底的温度会影响钙钛矿层的晶体结构,温度为60℃时,钙钛矿的平均晶粒尺寸约为500 nm,且晶粒之间致密排列,导致光学带隙增加。采用连续二次旋涂方法,在加热温度为60℃时制作的钙钛矿太阳电池的光电转换效率达到14.7%,其中短路电流密度、开路电压和填充因子分别为18.9 ma/cm^2、1.13 V和69%。与常规钙钛矿太阳电池相比,开路电压提高约100 mV。依据暗态J-V测试结果,二次旋涂工艺条件下,该光伏器件的反向饱和电流密度约为10^-5m A/cm^2,比一次旋涂工艺降低3个数量级。

关键词：钙钛矿太阳电池二次旋涂结晶性光学带隙反向饱和电流密度

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SHJ太阳电池叠层减反结构及光电性能研究

太阳能学报 2020年第2期41卷 303-309页

作者：周杰俞健马忠权刘正新上海大学理学院上海200444 中国科学院上海微系统与信息技术研究所上海201800

创新性提出低温退火下异质结(SHJ)太阳电池的叠层减反射结构。采用等离子体增强化学气相沉积技术在沉积金属电极后的SHJ太阳电池入光面依次沉积SiN_x和SiO_x薄膜,形成SiO_x/SiN_x/IWO三层减反射膜,则电极部分为SiO_x/SiN_x/Ag/IWO的叠... 详细信息

创新性提出低温退火下异质结(SHJ)太阳电池的叠层减反射结构。采用等离子体增强化学气相沉积技术在沉积金属电极后的SHJ太阳电池入光面依次沉积SiN_x和SiO_x薄膜,形成SiO_x/SiN_x/IWO三层减反射膜,则电极部分为SiO_x/SiN_x/Ag/IWO的叠层结构,经低温退火银浆穿透表面介电薄膜形成导电通路。结果表明,SiO_x/SiN_x/IWO叠层具有优异的光学透过性,并显著降低电池表面反射损失。与单层IWO薄膜相比,厚度分别为90、30、60 nm的SiO_x/SiN_x/IWO的三层减反射膜使平均反射率下降至5.9%,对应波段外量子效率显著提高,SHJ电池短路电流密度和转换效率分别提高1.22 ma/cm^2和0.96%,具有巨大的应用潜力。

关键词：叠层减反射光电特性低温退火 SHJ电池