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ON THE APPROXImATION OF INCOmPRESSIBLE mISCIBLE DISPLACEmENT PROBLEmS IN POROUS mEDIA BY mIXED AND STANDARD FINITE VOLUmE ELEmENT mETHODS

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International Journal of modeling, Simulation, and Scientific Computing 2013年第3期4卷 149-178页

作者： sarvesh kumar Department of mathematics Indian Institute of Space Science and Technology Thiruvananthapuram 695547 KeralaIndia

The incompressible miscible displacement problem in porous media is modeled by a coupled system of two nonlinear partial differential equations,the pressure–velocity equation and the concentration *** this paper,we present a mixed finite volume element method(FVEm)for the approximation of the pressure–velocity equation and a standard FVEm for the concentration equation.A priori error estimates in L^(∞)(L^(2))are derived for velocity,pressure and *** results are presented to substantiate the validity of the theoretical results.

关键词： mixed methods finite volume element methods miscible displacement problems error estimates numerical experiments.

Polyaxial strength criterion and closed-form solution for squeezing rock conditions

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Journal of Rock mechanics and Geotechnical Engineering 2020年第3期12卷 507-515页

作者： Rupesh kumar Verma sarvesh Chandra Department of Civil Engineering Indian Institute of Technology KanpurKanpur208016India

In this paper,a nonlinear strength criterion is proposed using the average of intermediate(σ2)and minor(σ3)principal stresses in place of σ3 in Ramamurthy(1994)’s strength *** proposed criterion has the main advantages of negligible variation of strength parameters with confining stress and ability to link with conventional strength ***,a new closed-form solution based on the proposed criterion is derived and validated for Chhibro Khodri ***,analytical solutions including Singh’s elastoplastic theory,Scussel’s approach,and closed-form solutions based on conventional and modified Ramamurthy(2007)criteria are compared with the results of proposed *** is shown that the in situ squeezing pressure predictions made by the proposed approach are more ***,a parametric study of the present analytical solution is carried out,which displays explicit dependency of tunnel stability on internal support pressure and tunnel *** influence of tunnel geometry is observed to be dependent on the applied support pressure.

关键词： Intermediate principal stress Squeezing pressure Closed-form solution Polyaxial strength criterion

A robust approach to identify roof bolts in 3D point cloud data captured from a mobile laser scanner

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International Journal of mining Science and Technology 2021年第2期31卷 303-312页

作者： sarvesh kumar Singh Simit Raval Bikram Banerjee School of minerals and Energy Resources Engineering University of New South WalesSydneyNSW 2052Australia Agriculture Victoria HorshamVIC 3400Australia

Roof bolts such as rock bolts and cable bolts provide structural support in underground *** assessment of these support structures is critical to maintain roof stability and minimise safety risks in underground *** study proposes a robust workflow to classify roof bolts in 3 D point cloud data and to generate maps of roof bolt density and *** workflow was evaluated for identifying roof bolts in an underground coal mine with suboptimal lighting and global navigation satellite system(GNSS)signals not *** approach is based on supervised classification using the multi-scale Canupo classifier coupled with a random sample consensus(RANSAC)shape detection algorithm to provide robust roof bolt *** issue of sparseness in point cloud data has been addressed through upsampling by using a moving least squares *** accuracy of roof bolt identification was measured by correct identification of roof bolts(true positives),unidentified roof bolts(false negatives),and falsely identified roof bolts(false positives)using correctness,completeness,and quality *** proposed workflow achieved correct identification of 89.27%of the roof bolts present in the test ***,considering the false positives and false negatives,the overall quality metric was reduced to 78.54%.

关键词： mobile laser scanning Roof bolts Support system planning Roof monitoring Change detection Underground roadways

A review of laser scanning for geological and geotechnical applications in underground mining

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International Journal of mining Science and Technology 2023年第2期33卷 133-154页

作者： sarvesh kumar Singh Bikram Pratap Banerjee Simit Raval School of minerals and Energy Resources Engineering University of New South WalesSydneyNSW 2052Australia Agriculture Victoria Grains Innovation ParkHorshamVIC 3400Australia

Laser scanning can provide timely assessments of mine sites despite adverse challenges in the operational *** there are several published articles on laser scanning,there is a need to review them in the context of underground mining *** this end,a holistic review of laser scanning is presented including progress in 3D scanning systems,data capture/processing techniques and primary applications in underground *** scanning technology has advanced significantly in terms of mobility and mapping,but there are constraints in coherent and consistent data collection at certain mines due to feature deficiency,dynamics,and environmental influences such as dust and *** suggest that laser scanning has matured over the years for change detection,clearance measurements and structure mapping ***,there is scope for improvements in lithology identification,surface parameter measurements,logistic tracking and autonomous *** scanning has the potential to provide real-time solutions but the lack of infrastructure in underground mines for data transfer,geodetic networking and processing capacity remain limiting ***,laser scanners are becoming an integral part of mine automation thanks to their affordability,accuracy and mobility,which should support their widespread usage in years to come.

关键词： mine automation Point cloud Rock mass characterisation Change detection Data registration Georeferencing

A threshold voltage model of short-channel fully-depleted recessed-source/drain(Re-S/D) SOI mOSFETs with high-k dielectric

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Chinese Physics B 2015年第10期24卷 604-611页

作者： Gopi Krishna Saramekala sarvesh Dubey Pramod kumar Tiwari Department of Electronics and Communication Engineering National Institute of Technology Shri Ramswaroop memorial University

In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（mOSFET） is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional（2D） Poisson＇s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the transverse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model＇s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters,including the dielectric constant of gate-dielectric material.

关键词： recessed-source/drain (Re-S/D) high-k gate-material fringing field and SCEs

On-current modeling of short-channel double-gate(DG) mOSFETs with a vertical Gaussian-like doping profile

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Journal of Semiconductors 2013年第5期34卷 46-53页

作者： sarvesh Dubey Pramod kumar Tiwari S.Jit Department of Electronics Engineering Indian Institute of Technology(BHU)Varanasi-221005India Department of Electronics and Communication Engineering National Institute of Technology Rourkela-769008India

An analytic drain current model is presented for doped short-channel double-gate mOSFETs with a Gaussian-like doping profile in the vertical direction of the channel. The present model is valid in linear and satura- tion regions of device operation. The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect. Parameters like transcon- ductance and drain conductance that are important in assessing the analog performance of the device have also been formulated. The model results are validated by numerical simulation results obtained by using the commercially available ATLAS^Tm, a two dimensional device simulator from SILVACO.

关键词： drain current DG mOSFET transconductance drain conductance

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate mOSFETs with strained-silicon channel on silicon–germanium substrates

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Journal of Semiconductors 2014年第10期35卷 30-36页

作者： Pramod kumar Tiwari Gopi Krishna Saramekala sarvesh Dubey Anand kumar mukhopadhyay National Institute of Technology Rourkela Department of Electronics and Communication Engineering Faculty of Electronics and Communication SRM University

The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium mOSFETs in terms of subthreshold swing and off-current. The formu- lation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLASTm by Silvaco Inc.

关键词： strained-Si channel Si1-xGex substrate dual-metal gate subthreshold current subthreshold swing

Probiotics media: significance, challenges, and future perspective - a mini review

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Food Production, Processing and Nutrition 2022年第1期4卷 211-223页

作者： Vijay kumar Bindu Naik Akhilesh kumar Naresh Khanduri sarvesh Rustagi Sanjay kumar Department of Biosciences Swami Rama Himalayan UniversitySwami Rama NagarJolly GrantDehradun248016UttarakhandIndia Department of Life Sciences Graphic Era(Deemed to Be)UniversityBell RoadClement Town DehradunUttarakhand248001India Department of Food Technology UCALSUttaranchal UniversityDehradunUttarakhandIndia

The health benefits associated with probiotics have increased their application in pharmaceutical formulations and functional food development. High production of probiotic biomass requires a cost-effective production method and nutrient media optimization. The biomass production of probiotics can be enhanced by optimizing growth parameters such as substrate, pH, incubation time, etc. For economical industrial production of probiotic biomass, it is required to design a new medium with low cost. Wastes from the food industries are promising components for the development of the low-cost medium. Industrial wastes such as cheese whey and corn steep liquor are excellent examples of reliable sources of nitrogen for the biomass production of probiotic bacteria. The increased yield of biomass reduced the cost of production. This review focuses on the importance of probiotic media for biomass production and its challenges.

关键词： Probiotics media Health benefits Production

Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator mOSFETs

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Journal of Semiconductors 2014年第8期35卷 52-59页

作者： Gopal Rawat Sanjay kumar Ekta Goel mirgender kumar sarvesh Dubey S.Jit Department of Electronics Engineering Indian Institute of Technology (BHU) Varanasi India Faculty of Electronics and Communication Engineering Shri Ramswaroop Memorial University Lucknow-Deva Road India

This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted （FD） strained-Si-on-insulator （SSOI） mOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length （L）, gate-oxide thickness （tox）, strained-Si channel thickness （ts_Si）, peak doping concentration （Np）, project range （Rp） and straggle （op） of the Gaussian profile have been considered while predicting the device characteris- tics. The present work may help to overcome the degradation in subthreshold characteristics with strain engineering. These subthreshold current and swing models provide valuable information for strained-Si mOSFET design. Ac- curacy of the proposed models is verified using the commercially available ATLASTm, a two-dimensional （2D） device simulator from SILVACO.

关键词： strained-Si-on-insulator (SSOI) Poisson's solution short-channel-effects