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Achieving higher photoabsorption than groupⅢ-Ⅴsemiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

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Advanced Photonics Nexus 2023年第5期2卷 33-43页

作者： Wayesh Qarony Ahmed S.mayet Ekaterina Ponizovskaya Devine Soroush Ghandiparsi Cesar Bartolo-Perez Ahasan ahamed Amita Rawat Hasina H.mamtaz Toshishige Yamada Shih-Yuan Wang m.Saif Islama University of California DavisDepartment of Electrical and Computer EngineeringDavisCaliforniaUnited States W&WSens Devices Inc.Los AltosCaliforniaUnited States University of California Baskin School of EngineeringDepartment of Electrical and Computer EngineeringSanta CruzCaliforniaUnited States

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum,and it drops rapidly beyond 800 nm in near-infrared *** have experimentally demonstrated a technique utilizing photon-trapping surface structures to show a prodigious improvement of photoabsorption in 1-μm-thin silicon,surpassing the inherent absorption efficiency of gallium arsenide for a broad *** photon-trapping structures allow the bending of normally incident light by almost 90 deg to transform into laterally propagating modes along the silicon ***,the propagation length of light increases,contributing to more than one order of magnitude improvement in absorption efficiency in *** high-absorption phenomenon is explained by finitedifference time-domain analysis,where we show an enhanced photon density of states while substantially reducing the optical group velocity of light compared to silicon without photon-trapping structures,leading to significantly enhanced light–matter *** simulations also predict an enhanced absorption efficiency of photodetectors designed using 30-and 100-nm silicon thin films that are compatible with CmOS *** a very thin absorption layer,such photon-trapping structures can enable high-efficiency and high-speed photodetectors needed in ultrafast computer networks,data communication,and imaging systems,with the potential to revolutionize on-chip logic and optoelectronic integration.

关键词： photoabsorption photon trapping group-velocity reduction photodetectors silicon photonics

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