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Relationship between single and bulk mechanical properties for zeolite ZSm5 spray-dried particles

Particuology 2014年第3期12卷 130-138页

作者： m.marigo D.L.Cairns J.Bowen A.Ingram E.H.Stitt Johnson matthey Technology Centre P.O.Box 1Belasis AvenueBillinghamCleveland TS23 1LBUnited Kingdom Centre for Formulation Engineering Chemical EngineeringSchool of EngineeringThe University of BirminghamB15 2TTUnited Kingdom

In this work typical mechanical properties for a catalyst support material, ZSm5 （a spray-dried granular zeolite）, have been measured in order to relate the bulk behaviour of the powder material to the single particle mechanical properties. Particle shape and size distribution of the powders, determined by laser diffraction and scanning electron microscopy （SEm）, confirmed the spherical shape of the spray-dried particles. The excellent flowability of the material was assessed by typical methods such as the Hausner ratio and the Cart index, This was confirmed by bulk measurements of the particle-particle internal friction parameter and flow function using a Schulze shear cell, which also illustrated the low compressibility of the material. Single particle compression was used to characterize single particle mechanical properties such as reduced elastic modulus and strength from Hertz contact mechanics theory. Comparison with surface properties obtained from nanoindentation suggests heterogeneity, the surface being harder than the core. In order to evaluate the relationship between single particle mechanical properties and bulk compression behaviour, uniaxial confined compression was carried out. It was determined that the Adams model was suitable for describing the bulk compression and furthermore that the Adams model parameter, apparent strength of single particles, was in good agreement with the single particle strength determined from single particle compression test.

关键词： Zeolite particle Flowability Powder flow function Effective angle of internal friction Schulze shear cell Nanoindentation Single particle compression Bulk compression

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THIN FILm PIEZOELECTRIC DEVICES INTEGRATED ON CmOS

THIN FILM PIEZOELECTRIC DEVICES INTEGRATED ON CMOS

引用

2016年全国压电和声波理论及器件应用研讨会

作者： mohanraj SOUNDARA PANDIAN Eloi marigo FERRER Wee Song TAY Venkatesh mADHAVEN Arjun Kumar KANTImAHANTI SilTerra malaysia Sdn Bhd

Background, motivation and Objective Thin film Surface Acoustic Wave resonator(TFSAW) and Thin film Bulk Acoustic Wave resonator(FBAR) devices are continuously explored for various applications like oscillators, filters, low noise amplifiers, sensors and transducers. These applications involve the assembly of piezoelectric devices with the ASIC devices(Application-Specific-Integrated-circuits). ASIC devices are fabricated using CmOS technology(Complementary metal-Oxide-Semiconductor) technology. Focused material research and engineering activities have been carried out to form thin film piezoelectric devices with CmOS compatible material and fabrication techniques. motivated by the high market demand for miniaturization and systems with multitude functionality, researchers started to integrate the piezoelectric devices with ASIC devices on a single CmOS substrate. However direct integration of piezoelectric devices on CmOS substrate faces challenges in the process integration and device performance. In this paper we present the demonstrated results on the integrated TFSAW resonance designed to be at 300 mHz with an amplifier fabricated using "Sil Terra mEmS on CmOS" process platform. The same process platform has been extended for the bulk acoustic mode resonator with a vacuum sealed thin film encapsulation. The thin film encapsulated FBAR device resonance is designed to be at 4.6 GHz. Statement of Contribution/methods The fabricated TFSAW device is shown in Figure(1), Aluminum Nitride(Al N) thin film is used as a piezoelectric layer. The Al N(002) thin film is deposited using physical vapor deposition process and the achieved crystal orientation is 1.4°. The ASIC and Interdigital transducers(IDT) are fabricated using the Sil Terra CmOS 0.18μm technology. In Figure(1) the ASIC portion is shown in the left side which consists of amplifier and buffer circuit and the TFSAW is shown in the right side of the image. We have also demonstrated the FBAR devices with a thin f

关键词： Thin film Surface Acoustic wave resonator Thin film Bulk Acoustic wave resonator Integrated piezoelectric devices Aluminum Nitride

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