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Fabrication of a novel mOS diode by indium incorporation control for microelectronic applications

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Journal of Semiconductors 2017年第6期38卷 66-74页

作者： m.benhaliliba C.E.Benouis m.S.Aida A.Ayeshamariam material Technology Department Physics Faculty USTOMB University BP1505 Oran Algeria Thin Films & Plasma Laboratory Physics Department Mentouri University 25000 Constantine Algeria Department of Physics Khadir Mohideen College Adirampattinam 614701 India

Control of the electronic parameters on a novel metal–oxide–semiconductor（mOS）diode by indium doping incorporation is emphasized and *** electronic parameters,such as ideality factor,barrier height（BH）,series resistance,and charge carrier density are extracted from the current–voltage（I–V）and the capacitance–voltage（C–V）*** properties of the mOS diode based on 4%,6% and 8% indium doped tin oxide are largely *** Ag/SnO2/nSi/Au mOS diode is fabricated by spray pyrolysis route,at 300℃ from the In-doped *** was grown onto n-type silicon and metallic（Au）contacts which were made by thermal evaporation under a vacuum@10^-5 Torr and having a thickness of 120 nm and a diameter of 1 *** by the Cheung-Cheung approximation method,the series resistance increases（334–534Ω）with the In doping level while the barrier height（BH）remains constant around 0.57 *** Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500Ω.The indium doping level influences on the characteristics of Ag/SnO2：In/Si/Au mOS diode while the 4% indium level causes the capacitance inversion and the device turns into p-type material.

关键词： indium incorporation mOS diode current-voltage measurements capacitance-voltage characteristics microelectronic parameters

The sprayed ZnO films: nanostructures and physical parameters

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Journal of Semiconductors 2015年第8期36卷 30-36页

作者： m.benhaliliba A.Tiburcio-Silver A.Avila-Garcia A.Tavira Y.S.Ocak m.S.Aida C.E.Benouis material Technology Department Physics Faculty USTO-MB University ITT-DIE Cinvestav-IPN Department of Ingeniería Eléctrica-SEES Dicle University Education Faculty Science Department Thin Films & Plasma Lab Physics Department Mentouri University

We synthesized the pure and indium-doped （IZO） ZnO films with a facile composition control spray pyrolysis route. The substrate temperature （Ts） and In-doping effects on the properties of as-grown films are inves- tigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a （002） preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 ℃ moreover, the morphol- ogy of as-grown films, analyzed by AFm, shows nanostructures that have grown along the c-axis. The （3 ×3 μm2） area scanned AFm surface studies give the smooth film surface RmS 〈 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV （ZnO） and 3.31 eV （IZO） and the resistivity is reduced from 385 to 8Ω·m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.

关键词： sprayed ZnO films deposition temperature AFm observation photoluminescence emission resis- tivity

The investigation of electrodeposited Cu_2O/ITO layers by chronocoulometry process:effect of electrical potential

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Journal of Semiconductors 2016年第10期37卷 25-31页

作者： D.mohra m.benhaliliba m.Serin m.R.Khelladi H.Lahmar A.Azizi material Technology Department Physics Faculty USTO-MB University Yildiz Technical University Davutpasa Campus Faculty of Arts & Science Department of PhysicsSolid-state Physics 1014 34220 Esenler Laboratoire de Chimie Ingenierie Moleculaire et Nanostructures Universite Ferhat Abbas-Setif 1

The thin films of Cu2O are deposited by electrodeposition technique onto indium tin oxide（ITO）-coated glass substrate at different potentials. The precursor is an aqueous solution which contains respectively 0.05 m of CuSO4 and citric acid at kept temperature of 60℃ and the applied potential varies within the {-0：4 V,-0：7 V}SCE range. Based on the chronocoulometry（CC） process, the electrochemical, structural and optical parameters are determined. We measured the current as function of potential within the {-0：4 V,-0：7 V} range and the higher current is found to be within the {-0：7 V,-0：3 V} band. The grain sizes are of 12.12 nm and 35.47 nm according to（110） and（221） orientations respectively. The high textural coefficient of 0.943 is recorded for the potential -0：7 *** transmittance of 72.25 %, within the visible band, is obtained for the as-grown layer at -0：4 V and the band gap is found to be 2.2 e V for the electrodeposition potential of -0：7 V.

关键词： Cu2O films chronocoulometry electrodeposition ITO substrate voltammogram cathodic potential