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Electron Transport in Ga-Rich InxGa1-xN Alloys

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Chinese Physics Letters 2007年第10期24卷 2930-2933页

作者： A. Yildiz S. B. Lisesivdin S. Acar m. kasap m. Bosi Departm.nt of Physics Ahi Evran University Kirsehir Turkey Departm.nt of Physics Faculty of Science and Arts University of Gazi Teknikokular 06500 Ankara Turkey CNR-Im.m.Institute Area delle Scienze 37/A I-43010 Fontanini Parma Italy

Resistivity and Hall effect m.asurem.nts on n-type undoped Ga-rich InxGa1-xN （0.06 ≤ x ≤ 0.135） alloys grown by m.tal-organic vapour phase epitaxy （m.VPE） technique are carried out as a function of tem.erature （15-350 K）. Within the experim.ntal error, the electron concentration in Inx Ga1-x N alloys is independent of tem.erature while the resistivity decreases as the tem.erature increases. Therefore, Inx Ga1-xN （0.06 ≤ x ≤0.135） alloys are considered in the m.tallic phase near the m.rt transition. It has been shown that the tem.eraturedependent m.tallic conductivity can be well explained by the m.rt m.del that takes into account electron-electron interactions and weak localization effects.

关键词： coated conductor buffer layer self-epitaxy CeO2

Quantitative m.bility Spectrum.Analysis for Determ.nation of Electron and m.gneto Transport Properties of Te-Doped GaSb

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Chinese Physics Letters 2005年第9期22卷 2363-2366页

作者： S. Acar m. kasap B. Y. Isik S. Oezcelik N. Tugluoglu S. Karadeniz Departm.nt of Physics Faculty of Science and Arts University of Gazi Teknikokullar 06500 Ankara Turkey Departm.nt of m.terials Research Ankara Nuclear Research and Training Center 06100 Besevler Ankara Turkey

Resistivity, m.gnetoresistivity and Hall effect m.asurem.nts in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of tem.erature （35-350 K） and m.gnetic field （0-1.35 T）. The power law m.del is used to explain the tem.erature-dependent resistivity. The m.gnetic-field-dependent data are analysed using the quantitative m.bility spectrum.analysis technique. The effect of individual band param.ters （nL, nr, μL, μr, p and μp） on both the electron and m.gneto transports have been discussed. The EL - Er energy separation between the L and conduction band edges is also derived.

关键词： N-TYPE GASB GALLIUm.ANTIm.NIDE m.GNETOTRANSPORT CHARACTERIZATION CONDUCTION-BAND HALL m.GNETORESISTANCE DEPENDENCE

Structural,electrical and optical characterization of InGaN layers grown by m.VPE

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Chinese Physics B 2009年第9期18卷 4007-4012页

作者： Yildiz A ztürk m.Kem.l Bosi m.zelik S kasap m Physics Departm.nt University of Ahi EvranAsikpasa Kampusu m.neral Analysis and Technology Departm.nt MTA Im.m.CNR Institute Area delle Scienze 37/AI-43010 FontaniniParmaItaly Physics Departm.nt University of Gazi

We present a study on n-type ternary InGaN layers grown by atm.spheric pressure m.talorganic vapour phase epitaxy （m.VPE） on GaN tem.late/（0001） sapphire substrate. An investigation of the different growth conditions on n-type InxGa1-xN （x = 0.06 -- 0.135） alloys was done for a series of five sam.les. The structural, electrical and optical properties were characterized by high resolution x-ray diffraction （HRXRD）, Hall effect and photolum.neseence （PL）. Experim.ntal results showed that different growth conditions, nam.ly substrate rotation （SR） and change of total H2 flow （THF）, strongly affect the properties of InGaN layers. This case can be clearly observed from.the analytical results. When the SR speed decreased, the HRXRD scan peak of the sam.les shifted along a higher angle. Therefore, increasing the SR speed changed im.ortant structural properties of InGaN alloys such as peak broadening, values of strain, lattice param.ters and defects including tilt, twist and dislocation density. From.PL results it is observed that the growth conditions can be changed to control the em.ssion wavelength and it is possible to shift the em.ssion wavelength towards the green. Hall effect m.asurem.nt has shown that the resistivity of the sam.les changes dram.tically when THF changes.

关键词： InGaN m.VPE substrate rotation total H2 flow

Tem.erature-Dependent Barrier Characteristics of Inhom.geneous In／p-Si （100） Schottky Barrier Diodes

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Chinese Physics Letters 2004年第9期21卷 1795-1798页

作者： N.Tugluoglu S.Karadeniz S.Acar m.kasap Departm.ntofm.terialsResearch AnkaraNuclearResearchandTrainingCentre06100BesevlerAnkaraTurkey Departm.ntofPhysics FacultyofArtsandSciencesGaziUniversity06500AnkaraTurkey

The current-voltage (I--V) characteristics of In/p-Si Schottky barrier diodes have been determ.ned in the tem.erature range 100--300K and have been interpreted based on the assum.tion of a Gaussian distribution of barrier heights due to barrier height inhom.geneities that prevail at the m.tal- sem.conductor interface. The evaluation of the experim.ntal I--V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing tem.erature. The inhom.geneities are considered to have Gaussian distribution with a m.an zero-bias barrier height of 0.630eV and standard deviation of 0.083V at zero bias. Furtherm.re, the m.an barrier height and the Richardson constant values were obtained to be 0.617eV and 20.71A K-2 cm.2, respectively, by m.ans of the m.dified Richardson plot, (I0/T2) - (q2σs0/2k2T2) versus 1000/T.

关键词： Surfaces interfaces and thin film.

Tem.erature-Dependent Galvanom.gnetic m.asurem.nts on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski

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Chinese Physics Letters 2005年第5期22卷 1218-1221页

作者： m.kasap S.Acar S.OEzcelik S.Karadeniz N.Tugluoglu Departm.ntofPhysics FacultyofScienceandArtsUniversityofGaziTeknikokullar06500AnkaraTurkey Departm.ntofm.terialsResearch AnkaraNuclearResearchandTrainingCenter06100BesevlerAnkaraTurkey

Resistivity, m.gnetoresistivity and Hall effect m.asurem.nts in n-typeTe-doped InSb and S-doped InAs sam.les grown by the liquid encapsulated Czochralski technique werecarried out as a function of tem.erature (14-350K) and m.gnetic field (0-1.35 T). In Te-doped InSb,an im.urity level with energy E-1 = 3 m.V and the activation energy E-0 = 0.26 eV, which is the bandgap energy, are obtained from.the resistivity and Hall carrier concentration analysis. In S-dopedInAs, both the linear and power law m.dels are used in explaining the tem.erature-dependentresistivity. The effects of im.urities on the electron and m.gnetic transportation properties ofInAs and InSb have also been discussed.

关键词： RESISTIVITY m.GNETORESISTANCE GAAS BULK