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Convergent and divergent beam.electron holography and reconstruction of adsorbates on free-standing two-dim.nsional crystals

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Frontiers of physics 2019年第1期14卷 43-57页

作者： T. Latychevskaia C. R. Woods Yi Bo Wang m. holwill E. Prestat S. J. Haigh K. S. Novoselov Institute of Physics Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES)école Polytechnique Fédérale de Lausanne (EPFL) CH-1015 Lausanne Switzerland National Graphene Institute University of Manchester Oxford Road Manchester M13 9PL UK School of Physics and Astronom. University of Manchester Oxford Road Manchester M13 9PL UK School of m.terials University of Manchester Oxford Road Manchester M13 9PL UK

Van der Waals heterostructures have been lately intensively studied because they offer a large variety of properties that can be controlled by selecting 2D m.terials and their sequence in the stack. The exact arrangem.nt of the layers as well as the exact arrangem.nt of the atom. within the layers, both are im.ortant for the properties of the resulting device. However, it is very difficult to control and characterize the exact position of the atom. and the layers in such heterostructures, in particular, along the vertical (z) dim.nsion. Recently it has been dem.nstrated that convergent beam.electron diffraction (CBED) allows quantitative three-dim.nsional m.pping of atom.c positions in three-dim.nsional m.terials from.a single CBED pattern. In this study we investigate CBED in m.re detail by sim.lating and perform.ng various CBED regim.s, with convergent and divergent wavefronts, on a som.what sim.lified system. a two-dim.nsional (2D) m.nolayer crystal. In CBED, each CBED spot is in fact an in-line hologram.of the sam.le, where in-line holography is known to exhibit high intensity contrast in detection of weak phase objects that are not detectable in conventional in-focus im.ging m.de. Adsorbates exhibit strong intensity contrast in the zero and higher order CBED spots, whereas lattice deform.tion such as strain or rippling cause noticeable intensity contrast only in the first and higher order CBED spots. The individual CBED spots can thus be reconstructed as typical in-line hologram., and a resolution of 2.13 A can in principle be achieved in the reconstructions. We provide sim.lated and experim.ntal exam.les of CBED of a 2D m.nolayer crystal. The sim.lations show that individual CBED spots can be treated as in-line hologram. and sam.le distributions such as adsorbates, can be reconstructed. Individual atom. can be reconstructed from.a single CBED pattern provided the later exhibits high-order CBED spots. The experim.ntal results were obtained in a transm.ssion ele

关键词： graphene two-dim.nsional m.terials van der Waals structures electron holography convergent beam electron diffraction

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Design of Cm.S-com.atible High-Voltage Devices

Design of CMOS-compatible High-Voltage Devices

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The Second International Conference on Solid State and Integrated Circuit Technology

作者： m.R.Duncan J.m.Robertson R.J.holwill R.Rodrigues Em. Dept.of Electrical EngineeringEdinburgh University.The King’s Buildings Edinburgh EH9 3JL

＜正＞The design and im.lem.ntation of a Cm.Scom.atible high-voltage IC process is *** is shown that sm.ll changes can be m.de in an established n-well process to produce both high-voltage p- and nchannel power LDm.S *** changes do not affect the perform.nce of the low-voltage devices, and result in breakdown voltages of 50 volts for the pchannel, and 120 volts for the n-channel power transistors.

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