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Development and characterization of photovoltaic tandemjunction nanowires using electron-beam-induced current measurements

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Nano Research 2022年第9期15卷 8510-8515页

作者： lukas hrachowina Enrique Barrigón Magnus T.Borgström NanoLund and Divison of Solid State Physics Lund UniversityBox 11822100 LundSweden Universidad de Málaga Andalucía TechDepartamento de Física Aplicada ⅠCampus de Teatinoss/nMálaga 29071Spain

Nanowires have many interesting properties that are of advantage for solar cells,such as the epitaxial combination of latticemismatched materials without plastic *** could be utilized for the synthesis of axial tandem-junction nanowire solar cells with high efficiency at low material ***-beam-induced current measurements have been used to optimize the performance of single-junction nanowire solar ***,we use electron-beam-induced current measurements to break the barrier to photovoltaic tandem-junction *** particular,we identify and subsequently prevent the occurrence of a parasitic junction when combining an InP n-i-p junction with a tunnel ***,we demonstrate how to use optical and electrical biases to individually measure the electron-beam-induced current of both sub-cells of photovoltaic tandem-junction *** show that with an applied voltage in forward direction,all junctions can be analyzed *** development of this characterization technique enables further optimization of tandem-junction nanowire solar cells.

关键词： Ⅲ-Ⅴnanowire nanowire solar cell tandem-junction Esaki tunnel diode electron-beam induced current(EBIC)

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Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires

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Nano Research 2021年第11期14卷 4087-4092页

作者： lukas hrachowina Xianshao Zou Yang Chen Yuwei Zhang Enrique Barrigón Arkady Yartsev Magnus T.Borgström NanoLund Lund UniversityBox 11822100LundSweden Divison of Solid State Physics Lund UniversityBox 11822100LundSweden Divison of Chemical Physics Lund UniversityBox 12422100LundSweden Toyota Technological Institute NagoyaAichi 468-8511Japan

Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating PO_(x)/Al_(2)O_(3) shell in contrast to results using SiO_(x). We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited PO_(x)/Al_(2)O_(3) has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices.

关键词： InP nanowires oxides MOVPE electron beam induced current(EBIC) time-resolved photoluminescence(TRPL) field-effect

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