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Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Journal of Materiomics 2024年第4期10卷 762-769页

作者： Chuanlai Ren liyufen dai Congbing Tan Guangtong Yuan Ke Qu Jinbin Wang Xiangli Zhong Mingqiang Huang Jiyan dai Gaokuo Zhong Jiangyu Li Shenzhen Institutes of Advanced Technology Chinese Academy of SciencesShenzhen518055GuangdongChina Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and TechnologyShenzhen518055GuangdongChina School of Materials Science and Engineering Xiangtan UniversityXiangtan411105HunanChina School of Physics and Electronics Hunan University of Science and TechnologyXiangtan411201HunanChina Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen518055GuangdongChina Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong999077China

Negative capacitance(NC)has the potential to enable low power microelectronics beyond the fundamental thermionic limit,and it has been theorized that the thermodynamically unstable NC of ferroelectrics can be stabilized by linear dielectric,making negative capacitance ferroelectric field effect transistors(NC-FeFET)***,the validity of NC as a physical concept for ferroelectrics remain contentious despite numerous theoretical and experimental investigations,and the intrinsic ferroelectric NC with suppressed polarization has not been demonstrated except locally at vortex *** NC-FeFET with subthreshold swing(SS)lower than 60 mV/dec limit has been reported,such device characteristics has not been directly connected to suppressed polarization at materials’level,and alternative mechanisms other than NC have also been *** we demonstrate stable sub-60 mV/dec SS with hysteresis free Isingle bondV in NC-FeFET based on SrTiO_(3)/Pb(Zr_(0.1)Ti_(0.9))O_(3)/SrTiO_(3) heterostructure,and observe its suppressed polarization at both macroscopic and microscopic *** intrinsic ferroelectric NC thus is experimentally confirmed and directly connected to NC-FeFET performance,and the mica-based device is also highly flexible and robust under cyclic bending as well as extended heating.

关键词： Negative capacitance field-effect transistors Ferroelectric Pulse laser deposition Mica

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