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Simulations of the Dependence of Gas Physical Parameters on Deposition Variables during HFCVD Diamond Films

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Journal of Materials Science & Technology 2006年第5期22卷 599-604页

作者： Aiying WANG Kwangryeol Lee Chao SUN lishi wen Future Technology Research Division Korea Institute of Science and Technology P.O.Box 131 CheongryangSeoul 130-650 Korea Plasma Lab J＆L Tech. Co. Ltd Siheung city Kyunggi-do 2185-7 Korea Department of Surface Engineering of Materials Institute of Metal Research Chinese Academy of SciencesShenyang 110016 China

During the growth of the hot filament chemical vapor deposition （HFCVD） diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on the gas physical parameters, including the temperature, velocity and volume density of gas. It was found that, even in the case of optimized deposition parameters, the space distributions of gas parameters were heterogeneous due primarily to the thermal blockage come from the hot filaments and cryogenic pump effect arisen from the cold reactor wall. The distribution of volume density agreed well with the thermal round-flow phenomenon, one of the key obstacles to obtaining high growth rate in HFCVD process. In virtue of isothermal boundary with high temperature or adiabatic boundary condition of reactor wall, however, the thermal roundflow was profoundly reduced and as a consequence, the uniformity of gas physical parameters was considerably improved, as identified by the experimental films growth.

关键词： Gas physical parameters Simulations Diamond films HFCVD

Effects of Power Density and Post Annealing Process on the Microstructure and Wettability of TiO_2 Films Deposited by Mid-frequency Magnetron Reactive Sputtering

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Journal of Materials Science & Technology 2008年第2期24卷 172-178页

作者： Ying CUI Hao DU Jinquan XIAO lishi wen Division of Surface Engineering of Materials Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China Graduate School of Chinese Academy of Sciences Beijing 100039 China

The relationship of ＂preparation parameters-microstructures-wettability＂ of TiO2 films was reported. In this work, TiO2 films were deposited onto glass and silicon substrates by using mid-frequency dual magnetron sputtering technique at ambient temperature with various power densities and deposition time. After deposition, the films were heat treated at different annealing temperatures. X-ray diffraction （XRD）, Raman spectroscopy, and field-emission scanning electron microscopy （FE-SEM） were utilized to characterize TiO2 films. The wettability of the films was evaluated by water contact angle measurement. The phase transition temperature of TiO2 films depended on the power density. It was demonstrated that wettability was strongly structure dependent and the film with the thickness of 610 nm （the power density was 2.22 W/cm^2） showed the lowest contact angle （8°）. It can be concluded that smaller crystallite size, the rutile phase with （110） face being parallel to the surface, and tensile stress favored the hydrophilicity of the TiO2 films.

关键词： Titanium dioxide Reactive magnetron sputtering Phase composition Microstructure Hydrophilicity

Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH_4

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Journal of Materials Science & Technology 2008年第5期24卷 690-692页

作者： Hua CHENG Aimin WU Nanlin SHI lishi wen Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China Dalian University of Technology Dalian 116024 China Armor Technique Institute of PLA Changchun 130117 China

In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition （ECR-PECVD） using SiH4/Ar and SiH4/H2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F（SiH4）： F（Ar）=10：70 for the highest deposition rate.

关键词： Ar flow rate ECR-PECVD Poly-Si Thin Films

Analysis on the process of ZAO films by DC magnetron reactive sputtering

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Science China(Technological Sciences) 2011年第1期54卷 28-32页

作者： LU Feng XU ChengHai wen lishi School of Transportation and Mechanical Engineering Shenyang Jianzhu Uinversity Shenyang 110168 China School of Mechanical Engineering & Automation Northeastern University Shenyang 110004 China Institute of Metal Research Chinese Academy of Sciences Shenyang 110015 China

The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.

关键词： ZAO film resistivity transmissivity

Microstructure and In-plane Resistivity of Cu/Ni Multilayers

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Journal of Materials Science & Technology 1999年第1期15卷 75-78页

作者： Wang, Wei Huang, Rongfang wen, lishi Guo, Liping Wang, wenkui Chinese Acad Sci Inst Met Res Shenyang 110015 Peoples R China Chinese Acad Sci Inst Phys Beijing 100080 Peoples R China

The Cu/Ni multilayers were deposited using ion beam sputtering at room temperature and 250 degree C respectively. The microstructure of the multilayers including interfacial roughness, grain size and growth direction has been investigated by transmission electron microscopy and X-ray diffraction. The microstructure depends strongly on the substrate temperature and modulation wavelength, bigger grain size and larger interfacial roughness were obtained when the multilayers were deposited at 250 degree C, and the multilayers ceased to grow epitaxially due to the increasing defects in the multilayers. The resistivity of the multilayers is very sensitive to the microstructure due to the size-effect. In order to study the influence of the microstructure on the resistivity, the in-plane resistivity of Cu/Ni multilayers was measured using four-point probe. The resistivity increases with higher substrate temperature, and it decreases when the modulation wavelength becomes short. The interfacial roughness and grain size have co-contribution to the resistivity. The interface scattering is the main factor which has effect on the resistivity of Cu/Ni multilayers. (Edited author abstract) 13 Refs.

关键词： Multilayers

Effect of Sample Configuration on Droplet-Particles of TiN Films Deposited by Pulse Biased Arc Ion Plating

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Journal of Materials Science & Technology 2009年第5期25卷 681-686页

作者： Yanhui Zhao Guoqiang Lin Jinquan Xiao Chuang Dong lishi wen Institute of Metals Research Chinese Academy of Sciences Shenyang 110016 China Key Laboratory of Materials Modification by Laser Ion and Electron Beams Ministry of Education Dalian University of Technology Dalian 116085 China

Orthogonal experiments are used to design the pulsed bias related parameters, including bias magnitude, duty cycle and pulse frequency, during arc ion deposition of TiN films on stainless steel substrates in the case of samples placing normal to the plasma flux. The effect of these parameters on the amount and the size distribution of droplet-particles are investigated, and the results have provided sufficient evidence for the physical model, in which particles reduction is due to the case that the particles are negatively charged and repulsed from negative pulse electric field. The effect of sample configuration on amount and size distribution of the particles are analyzed. The results of the amount and size distribution of the particles are compared to those in the case of samples placing parallel to the plasma flux.

关键词： Arc ion plating Pulsed bias TiN film Droplet-particles

Effect of Enhanced Plasma Density on the Properties of Aluminium Doped Zinc Oxide Thin Films Produced by DC Magnetron Sputtering

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Journal of Materials Science & Technology 2011年第5期27卷 393-397页

作者： Jun Gong Xiaobo Zhang Zhiliang Pei Chao Sun lishi wen Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China

Aluminum doped zinc oxide （AZO） thin films were prepared by DC magnetron sputtering at low substrate temperature. A coaxial solenoid coil was placed near the magnetron target to enhance the plasma density （Ji）. The enhanced plasma density improved significantly the bulk resistivity （p） and its homogeneity in spatial distribution of AZO films. X-ray diffraction （XRD） analysis revealed that the increased Ji had influenced the crystallinity, stress relaxation and other material properties. The AZO films deposited in low plasma density （LPD） mode showed marked variation in p （ranging from -6.5x10-2 to 1.9x10-3 Ω.cm）, whereas those deposited in high plasma density （HPD） mode showed a better homogeneity of films resistivity （ranging from ~1.3x10-3 to 3.3x10-3 ~.cm） at different substrate positions. The average visible transmittance in the wavelength range of 500-800 nm was over 80%, irrespective of the deposition conditions. The atomic force microscopy （AFM） surface morphology showed that AZO films deposited in HPD mode were smoother than that in LPD mode. The high plasma density produced by the coaxial solenoid coil improved the electrical property, surface morphology and the homogeneity in spatial distribution of AZO films deposited at low substrate temperature.

关键词： Sputtering Electronic conductivity Ion bombardmentPlasma density

Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH_4+Ar

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Journal of Materials Science & Technology 2009年第4期25卷 489-491页

作者： Hua Cheng Aimin Wu Jinquan Xiao Nanlin Shi lishi wen Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China Dalian University of Technology Dalian 116024 China Armor Technique Institute ofPLA Changchun130117 China

Polycrystalline silicon （poly-Si） films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition （ECR-PECVD）. The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H2 dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200℃, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.

关键词： Poly-Si films ECR-PECVD Substrate temperature Ar-dilution

Influence of an External Magnetic Field on the Growth of Nanocrystalline Silicon Films Grown by MF Magnetron Sputtering

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Journal of Materials Science & Technology 2012年第11期28卷 992-998页

作者： Junhua Gao Lin Zhang Jinquan Xiao Jun Gong Chao Sun lishi wen State Key Laboratory for Corrosion and Protection Institute of Metal ResearchChinese Academy of SciencesShenyang110016China

The effects of an external magnetic field originating from two solenoid coils on the magnetic field configuration, plasma state of a dual unbalanced magnetron sputter system and the structure of nanocrystalline Si films were examined. Numerical simulations of the magnetic field configuration showed that increasing the coil current significantly changed the magnetic field distribution between the substrate and targets. The saturated ion current density Ji in the substrate position measured by using a circular flat probe increased from 0.18 to 0.55 mA/cm2 with the coil current ranging from 0 to 6 A. X-ray diffraction and Raman results revealed that increasing the ion density near the substrate would benefit crystallization of films and the preferential growth along [lI1] orientation. From analysis of the surface morphology and the microstructure of Si films grown under different plasma conditions, it is found that with increasing the Ji, the surface of the film was smoothed and the alteration in the surface roughness was mainly correlated to the localized surface diffusion of the deposited species and the crystallization behavior of the films.

关键词： Nanocrystalline silicon Thin film Solenoid coil MF magnetron sputtering