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Rain Erosion Behavior of Silicon Dioxide Films Prepared on Sapphire

Journal of materials science & Technology 2005年第6期21卷 883-886页

作者： liping feng+, zhengtang liu and wenting liu laboratory of functional materials, college of materials science and engineering, northwestern polytechnical university, xi’an710072, china laboratory of functional materials College of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 China

Silicon dioxide （SiO2） films were prepared on sapphire （α-Al2O3） by radio frequency magnetron reactive sputtering in order to increase both transmission and rain erosion resistant performance of infrared domes of sapphire. Composition and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The transmittance of uncoated and coated sapphire was measured using a Fourier transform infrared （FTIR） spectrometer. Rain erosion tests of the uncoated and coated sapphire were performed at 211 m/s impact velocity with an exposure time ranging from 1 to 8 min on a whirling arm rig. Results show that the deposited films can greatly increase the transmission of sapphire in mid-wave IR. After rain erosion test, decreases in normalized transmission were less than 1% for designed SiO2 films and the SiO2 coating was strongly bonded to the sapphire substrate. In addition, sapphires coated with SiO2 films had a higher transmittance than uncoated ones after rain erosion.

关键词： Silicon dioxide films Sapphire Magnetron reactive sputtering Rain erosion

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Controllable preparation of ultrathin 2D BiOBr crystals for high-performance ultraviolet photodetector

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science china materials 2021年第1期64卷 189-197页

作者： Pengfei liu Lei Yin liping feng Yu Sun Hanqing Sun Wenqi xiong Congxin xia Zhenxing Wang zhengtang liu State Key Lab of Solidification Processing College of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’an710072China Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical FabricationNational Center for Nanoscience and TechnologyBeijing100190China college of Physics and Material science Henan Normal UniversityXinxiang453007China

Ternary layered compound materials(bismuth oxyhalides and metal phosphorus trichalcogenides)stand out in electronic and optoelectronic fields due to their interesting physical ***,few studies focus on the preparation of high-quality two-dimensional(2D)BiOBr crystals with a typical layered structure,let alone their optoelectronic ***,for the first time,high-quality 2D BiOBr crystals with ultrathin thicknesses(less than 10 nm)and large domain sizes(~100μm)were efficiently prepared via a modified space-confined chemical vapor deposition(SCCVD)*** is demonstrated that a moderate amount of H2O molecules in the SCCVD system greatly promote the formation of high-quality 2D BiOBr crystals because of the strong polarity of H2O *** addition,a linear relationship between the thickness of BiOBr nanosheets and Raman shift of A1g(1)mode was *** theoretical calculations were carried out to verify the experimental ***,the BiOBr-based photodetector was fabricated,exhibiting excellent performances with a responsivity of 12.4 A W-1 and a detectivity of 1.6×1013 Jones at 365 *** study paves the way for controllable preparation of high-quality 2D BiOBr crystals and implies intriguing opportunities of them in optoelectronic applications.

关键词： 2D BiOBr crystals SCCVD method H2O molecule interlayer interaction ultraviolet photodetector

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HfO_2基阻变存储器的电极效应（英文）

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稀有金属材料与工程 2015年第11期44卷 2642-2645页

作者：谭婷婷郭婷婷李小晶陈曦冯丽萍刘正堂西北工业大学凝固技术国家重点实验室陕西西安710072

研究了Cu/HfO_2/ITO和TiN/HfO_2/ITO_2种结构阻变存储器件的电阻转变特性。2种结构均表现出稳定的、可重复的双极电阻转变行为。Cu/HfO_2/ITO器件的电阻转变机制是Cu导电细丝的形成,而对于TiN/HfO_2/ITO器件,在TiN顶电极和HfO_2薄膜中... 详细信息

研究了Cu/HfO_2/ITO和TiN/HfO_2/ITO_2种结构阻变存储器件的电阻转变特性。2种结构均表现出稳定的、可重复的双极电阻转变行为。Cu/HfO_2/ITO器件的电阻转变机制是Cu导电细丝的形成,而对于TiN/HfO_2/ITO器件,在TiN顶电极和HfO_2薄膜中会形成界面层,因此氧空位导电细丝的形成与断裂,是其主要的电阻转变机制。

关键词： HfO2薄膜电阻转变机制金属细丝氧空位

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