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Achieving a high energy storage density in Ag(Nb,Ta)O_(3) antiferroelectric films via nanograin engineering

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Journal of Advanced Ceramics 2023年第1期12卷 196-206页

作者： Hongbo CHENG Xiao ZHAI Jun OUYANG limei zheng Nengneng LUO Jinpeng LIU Hanfei ZHU Yingying WANG Lanxia HAO Kun WANG Institute of Advanced Energy Materials and Chemistry School of Chemistry and Chemical EngineeringQilu University of Technology(Shandong Academy of Sciences)Jinan 250353China College of Electronic and Optical Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Physics Shandong UniversityJinan 250100China Guangxi Key Laboratory of Processing for Non-ferrous Metallic and Featured Materials School of ResourcesEnvironment and MaterialsCenter on Nanoenergy ResearchSchool of Physical Science and TechnologyGuangxi UniversityNanning 530004China Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials(Ministry of Education) School of Materials Science and EngineeringShandong UniversityJinan 250061China Jinan Cigarette Factory China Tobacco Shandong Industrial Co.Ltd.Jinan 250104China

Due to its lead-free composition and a unique double polarization hysteresis loop with a large maximum polarization(Pmax)and a small remnant polarization(Pr),AgNbO_(3)-based antiferroelectrics(AFEs)have attracted extensive research interest for electric energy storage ***,a low dielectric breakdown field(Eb)limits an energy density and its further *** this work,a highly efficient method was proposed to fabricate high-energy-density Ag(Nb,Ta)O_(3) capacitor films on Si substrates,using a two-step process combining radio frequency(RF)-magnetron sputtering at 450℃and post-deposition rapid thermal annealing(RTA).The RTA process at 700℃led to sufficient crystallization of nanograins in the film,hindering their lateral growth by employing short annealing time of 5 *** obtained Ag(Nb,Ta)O_(3) films showed an average grain size(D)of~14 nm(obtained by Debye-Scherrer formula)and a slender room temperature(RT)polarization-electric field(P-E)loop(Pr≈3.8 mC·cm^(−2) and P_(max)≈38 mC·cm^(−2) under an electric field of~3.3 MV·cm^(−1)),the P-E loop corresponding to a high recoverable energy density(W_(rec))of~46.4 J·cm^(−3) and an energy efficiency(η)of~80.3%.Additionally,by analyzing temperature-dependent dielectric property of the film,a significant downshift of the diffused phase transition temperature(T_(M2-M3))was revealed,which indicated the existence of a stable relaxor-like AFE phase near the *** downshift of the T_(M2-M3) could be attributed to a nanograin size and residual tensile strain of the film,and it led to excellent temperature stability(20-240℃)of the energy storage performance of the *** results indicate that the Ag(Nb,Ta)O_(3) film is a promising candidate for electrical energy storage applications.

关键词： antiferroelectrics(AFE) AgNbO_(3) Ag(Nb Ta)O_(3) energy storage film capacitors nanograin engineering

Lead-bismuth-free piezoceramics (Na_(0.5)K_(0.44)Li_(0.06))Nb_(0.95)Sb_(0.05)O_3-Na_(5.6)Cu_(1.2)Sb_(10)O_(29)

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Chinese Science Bulletin 2007年第4期52卷 566-569页

作者： zheng limei WANG JinFeng ZANG GuoZhong ZHAO MingLei QI Peng DU Juan SU WenBin MING BaoQuan School of Physics and Microelectronics State Key Laboratory of Crystal Materials Shandong University Ji'nan 250100 China

Newly developed sintering aid Na5.6Cu1.2Sb10O29 (NCS) and lead-bismuth-free piezoceramics (Na0.5K0.44Li0.06) Nb0.95Sb0.05O3 (NKLNS) were prepared by the conventional solid state reaction. The effects of sintering aid NCS on the electrical properties of NKLNS were investigated. It was found that the addition of a proper amount of sintering aid NCS to NKLNS is effective not only on improving the density and the piezoelectric activity, but also on reducing the dielectric loss of NKLNS. The NKLNS doped with 0.4 mol% NCS has a piezoelectric constant d33 as high as 261pC/N and an electromechanical coupling factor k33 above 60%. These results show that NCS-doped NKLNS is a promising and practicable candidate for lead-bismuth-free piezoceramics.

关键词：无铅无铋压电陶瓷相变铌酸盐钽酸盐

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Homogenous Sn-doped K(Ta,Nb)O_(3) single crystals and its high piezoelectric response

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Journal of Materiomics 2022年第3期8卷 702-709页

作者： Fengying Liu Yuanyuan Zhang limei zheng Gang Tian Juan Du Le Zhao Xudong Chen Xuping Wang Minglei Zhao School of Physics Shandong UniversityJinan250100China Advanced Materials Institute Qilu University of Technology(Shandong Academy of Sciences)Jinan250014China College of Materials Science and Engineering Liaocheng UniversityLiaocheng252059China School of Electronic and Information Engineering Department of Physics Qilu University of Technology(Shandong Academy of Sciences)JinanShandong250353China

Perovskite K(Ta,Nb)O_(3)(KTN)single crystal has drawn great interests for its outstanding electro-optic performance and excellent piezoelectric ***,growth of compositionally uniform KTN single crystals has always been a great challenge for the great segregation difference between Nb and *** this work,we propose a thermal field optimization strategy to resolve this *** Sn doped KTN(Sn:KTN)single crystal with significantly reduced composition gradient(0.003 mol/mm,1/4 e1/8 of other KTN system),minimal TC variation(13℃)and excellent piezoelectric and dielectric response(d_(33)=373 pC/N andε^(T)_(33)=5206)has been successfully *** found that the functional properties of Sn:KTN were greatly affected by the near-room temperature tetragonal-cubic phase *** the intrinsic aspect,longitudinal lattice deformation becomes much easier,resulting in maximum piezoelectric(d^(*)_(33)),dielectric(ε^(T*)_(33)),elastic(s^(E*)_(33))and electromechanical coupling(k^(*)_(33))coefficients along polar direction[001]_(C).From the extrinsic aspect,both domain wall density and domain wall mobility are greatly improved for the reduced lattice distortion,which also contribute a lot to the functional *** work provides a simple and practical route for designing and growing high quality crystals,and more importantly,reveals the fundamental mechanism of the phase transitions/boundaries on the functional properties.

关键词： Low composition gradient High piezoelectric response PS extension/contraction T-C phase transition Sn:KTN

Enhanced piezoelectricity of Cu-doped K(Ta,Nb)O_(3) single crystals

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Journal of Materiomics 2024年第5期10卷 1017-1025页

作者： Fulin Zhang Songtao Fan Yingxu Zhu Wendie Chen Bing Liu Yuguo Yang limei zheng Yuanyuan Zhang Xianshun Lv Xuping Wang Advanced Materials Institute Qilu University of Technology(Shandong Academy of Sciences)Jinan250014China Qilu University of Technology(Shandong Academy of Sciences) Advanced Materials InstituteKey Laboratory of Light Conversion Materials and Technology of Shandong Academy of SciencesJinan250014China School of Physics Shandong UniversityJinan250100China

As a class of solid solution material,K(Ta,Nb)O3(KTN)single crystals have attracted significant interest due to their excellent piezoelectric and electro-optic *** this study,the piezoelectric properties of KTN were improved through Cu *** the advantages of composition-regulating phase transition,a large,high-quality Cu:KTN crystal measuring 30 mm×25 mm×20 mm in size was grown using the improved top seeded solution growth ***-doped KTN exhibited better piezoelectric properties than pure KTN,and the full matrix parameters were *** dielectric,piezoelectric,and electromechanical coupling responses(ε^(T)_(11)-2,136,d_(33)∼303 pC/N,k_(t)∼0.515,and k33∼0.672)were successfully *** realize the optimized orientation of the piezoelectric properties,the orientation dependence of the single domain properties was investigated,and the mechanism of Cu doping to improve piezoelectric properties was *** found that 0.36%(in mass)Cu doped crystal consisted of A-site substitution,following ferroelectric and domain *** small ferroelectric domain sizes led to a large domain wall mobility rate and high domain wall density,which contributed to high piezoelectric *** work revealed the effect of A-position doping on piezoelectric properties and provided a theoretical and experimental foundation for the performance optimization of KTN-based materials.

关键词： Solid solution material Lead-free piezoelectric Enhanced piezoelectricity

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

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Research 2023年第1期2022卷 413-426页

作者： Biaolin Peng Qiuping Lu Yi-Chi Wang Jing-Feng Li Qi Zhang Haitao Huang Laijun Liu Chao Li limei zheng Zhong Lin Wang ISchool of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710126China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of SciencesBeijing 101400China State Key Laboratory of New Ceramics and Fine Processing Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Basque Centre for Materials Applications and NanostructuresUPV/EHU Science ParkBarrio Sarriena s/n48940 LeioaSpain kerbasque Basque Foundation for SciencePlaza Euskadi5Bilbao 48009Spain Department of Applied Physics The Hong Kong Polytechnic UniversityKowloonHong Kong Guangxi Key Laboratory of Optical and Electronic Materials and Devices Guilin University of TechnologyGuilin 541004China Instrument Analysis Center Xi'an Jiaotong UniversityXi'an 710049China 'School of Physics Shandong UniversityJinan 250100China school of Materials Science and Engineering Georgia Institute of TechnologyAtlantaGeorgia 30332-0245USA

Tunable devices constructed by ferroelectric thin flms are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications,for example,resonators,filters,or phase ***,it is dificult to simultaneously achieve these characteristics by traditional strategies,such as doping and strain ***,we demonstrate that the dielectric tunability of the sol-gel-prepared Pb(Sc_(1/2)Nb_(1/2))_(0.9)(Mg_(1/3)Nb_(2/3))_(0.O3)(PSNMN)thin film can be almost doubled from~47%to~80.0%(at 10kHz)at a low electric field(~530kV/cm),and the dielectric loss can be sharply reduced by more than an order of magnitude,from~0.50 to~0.037(at 1 kHz)when the thin flm was annealed in air at 650℃ for 15h under the help of an atmosphere-compensating-block(ACB)made from the proto-PSNMN ***,the PSNMN thin flm annealed with ACB also exhibited an extremely high thermally-stable dielectric tunability in an ultrabroad temperature range(>130 K),which could be attributed to the Maxwell-Wagner(MW)effect generated by the interface between the PSNMN disordered matrix and the B-site nanoscale-ordered structure formed during the long-term annealing *** reduced dielectric loss is mainly benefited from the reduced concentration of oxygen vacancy and the possibie MW efects,and the enhanced dielectric tunability could be ascribed to the weaker domain-pinning effect by oxygen *** breakthrough provides a new universal strategy to achieve utrahigh tunable performance in A(B'_(1/2)B"_(1/2))O3 ferroelectric thin films with a B-site nanoscale-ordered structure,meanwhile it paves the way for ultraintergrated tunable thin-flm-devices with great phase shifter performance in practical applications.

关键词： dielectric ferroelectric breakthrough

Enhanced electrical performance in CaBi_(4)Ti_(4)O_(15)ceramics through synergistic chemical doping and texture engineering

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Journal of Materiomics 2024年第2期10卷 471-479页

作者： Le Zhao Guohao Li Xiao Zhai Weijie Kuai Yuzhi Zhai Gang Tian Zhigang Gai Minglei Zhao Juan Du Hongjun Zhang limei zheng School of Information and Automation Engineering Qilu University of Technology(Shandong Academy of Sciences)Jinan250353China School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China Center for Optics Research and Engineering(CORE) Key Laboratory of Laser and Infrared System of Ministry of EducationShandong UniversityQingdaoShandong266237China College of Materials Science and Engineering Liaocheng UniversityLiaocheng252059China Functional Materials and Acoustooptic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China

High-temperature piezoelectric materials with excellent piezoelectricity,low dielectric loss and large resistivity are highly desired for many industrial sectors such as aerospace,aircraft and nuclear *** a synergistic design strategy combining microstructural texture and chemical doping is employed to optimize CaBi 4Ti 4O15(CBT)ceramics with bismuth layer *** textured microstructure with an orientation factor of 80%e82%has been successfully achieved by the spark plasma sintering ***,by doping MnO_(2),both advantages of hard doping and sintering aids are used to obtain the excellent electrical performance of d_(33)=27.3 pC/N,tandδ-0.1%,Q_(31)~2,307 and electrical re-sistivityρ~6.5×10^(10)Ω·*** to 600℃,the 0.2%(in mass)Mn doped CBT ceramics still exhibit high performance of d_(33)=26.4 pC/N,r~1.5×10^(6)Ω·cm and tandδ~15.8%,keeping at an applicable level,thus the upper-temperature limit for practical application of the CBT ceramics is greatly *** work paves a new way for developing and fabricating excellent high-temperature piezoelectric materials.

关键词： CaBi_(4)Ti_(4)O_(15) Piezoelectricity Mechanical quality factor Resistivity

Ultrathin SrTiO_(3)-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing

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Materials Futures 2023年第3期2卷 156-163页

作者： Fang Nie Jie Wang Hong Fang Shuanger Ma Feiyang Wu Wenbo Zhao Shizhan Wei Yuling Wang Le Zhao Shishen Yan Chen Ge limei zheng School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100People’s Republic of China School of Information and Automation Engineering Qilu University of Technology(Shandong Academy of Science)Jinan 250353People’s Republic of China Functional Materials and Acousto-Optic Instruments Institute School of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin 150080People’s Republic of China Spintronics Institute School of Physics and TechnologyUniversity of JinanJinan 250022People’s Republic of China Heilongjiang Provincial Key Laboratory of Oilfield Applied Chemistry and Technology School of Mechatronic EngineeringDaqing Normal UniversityDaqing 163712People’s Republic of China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190People’s Republic of China

Artificial synapses are electronic devices that simulate important functions of biological synapses,and therefore are the basic components of artificial neural morphological networks for brain-like *** of the most important objectives for developing artificial synapses is to simulate the characteristics of biological synapses as much as possible,especially their self-adaptive ability to external ***,we have successfully developed an artificial synapse with multiple synaptic functions and highly adaptive characteristics based on a simple SrTiO_(3)/Nb:SrTiO_(3)heterojunction type *** functions of synaptic learning,such as short-term/long-term plasticity(STP/LTP),transition from STP to LTP,learning–forgetting–relearning behaviors,associative learning and dynamic filtering,are all bio-realistically implemented in a single *** remarkable synaptic performance is attributed to the fascinating inherent dynamics of oxygen vacancy drift and diffusion,which give rise to the coexistence of volatile-and nonvolatile-type resistive *** work reports a multi-functional synaptic emulator with advanced computing capability based on a simple heterostructure,showing great application potential for a compact and low-power neuromorphic computing system.

关键词： memristor artificial synapse synaptic plasticity associative learning learning-experience

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煤层压裂液滤失系数计算方法探讨

天然气工业 2001年第3期21卷 45-47页

作者：席先武郑丽梅中科院长沙大地构造研究所江苏油田扬州高邮采油八队

压裂液滤失系数是压裂设计中的一个重要参数。在对煤层进行压裂设计时 ,如果直接利用试井和测井测得的渗透率和孔隙度值代入该滤失系数计算公式 ,算出的结果将与实际情况大相径庭 ,这是因为煤层中的渗透率与孔隙度等物性对应力极为敏感 ... 详细信息

压裂液滤失系数是压裂设计中的一个重要参数。在对煤层进行压裂设计时 ,如果直接利用试井和测井测得的渗透率和孔隙度值代入该滤失系数计算公式 ,算出的结果将与实际情况大相径庭 ,这是因为煤层中的渗透率与孔隙度等物性对应力极为敏感 (相对砂岩而言 )。当压裂液注入煤层时 ,煤层中极度发育的原始天然裂缝(割理、节理等 )重新开启 ,导致渗透率和孔隙度大大增加 ,而试井和测井只能测得有限范围内的这些原始天然裂缝闭合状态下的地层渗透率和孔隙度。文章通过考虑煤层物性的应力敏感性 ,对石油上成熟的压裂液滤失系数计算公式进行修正。

关键词：煤层压裂液滤失系数计算方法渗透率孔隙度储层气体

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乡村振兴战略下城乡体育“元素—产业—空间”多层交互及耦合发展研究

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城市发展研究 2019年第7期26卷 20-24页

作者：郑丽梅洛阳理工学院体育部

乡村振兴与现代城市发展是新时代的两大主题,体育在城乡融合发展中具有重要且独特作用。体育元素主要体现在体育设施、器具和符号及其集合,其本身具有商业价值。在消费升级、需求层次提升和城乡融合发展阶段,体育元素、体育产业和体育... 详细信息

乡村振兴与现代城市发展是新时代的两大主题,体育在城乡融合发展中具有重要且独特作用。体育元素主要体现在体育设施、器具和符号及其集合,其本身具有商业价值。在消费升级、需求层次提升和城乡融合发展阶段,体育元素、体育产业和体育空间在城乡发展中的角色和地位日益凸显。城乡禀赋差异在体育元素微观层面、体育产业中观层面和体育空间宏观层面进行多层交互整合形成城乡交融区域。体育元素的城乡流动和价值重组,形成城乡体育"元素—产业—空间"耦合发展的新型空间格局。洛阳市城乡互动发展的实践表明,在区域竞争日趋激烈的环境中,体育元素布局应以空间为载体,以产业为主导,以价值链为核心,构建产城融合、城乡一体、功能互补、紧凑和谐的新型城乡关系,助力城市产业转型升级,推动乡村振兴和区域经济高质量发展。

关键词：乡村振兴体育元素体育产业体育空间价值链