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Controlled Growth of One-Dimensional Oxide Nanomaterials

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Journal of Materials Science & Technology 2006年第1期22卷 1-18页

作者： Xiaosheng FANG lide zhang Key Laboratory of Materials Physics Institute of Solid State Physics Chinese Academy of Sciences P.O. Box 1129Hefei 230031 China

This article reviews the recent developments in the controlled growth of one-dimensional （1D） oxide nanomaterials, including ZnO, SnO2, In203, Ga203, SiOx, MgO, and Al203. The growth of 2D oxide nanomaterials was carried out in a simple chemical vapor transport and condensation system. This article will begin with a survey of nanotechnology and 1D nanomaterials achieved by many researchers, and then mainly discuss on the controlled growth of ID oxide nanomaterials with their morphologies, sizes, compositions, and microstructures controlled by altering experimental parameters, such as the temperature at the source material and the substrate, temperature gradient in the tube furnace, the total reaction time, the heating rate of the furnace, the gas flow rate, and the starting material. Their roles in the formation of various morphologies are analyzed and discussed. Finally, this review will be concluded with personal perspectives on the future research directions of this area.

关键词： Controlled growth One-dimensional Oxide Nanomaterials

Current Progress of Hf(Zr)-Based High-k Gate Dielectric Thin Films

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Journal of Materials Science & Technology 2007年第4期23卷 433-448页

作者： Gang HE lide zhang Key Laboratory of Materials Physics Institute of Solid State Physics Chinese Academy of Sciences Hefei 230031 China　

With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant （high-k） gate materials, as alternatives to SiO2, have been extensively investigated. Hf （Zr）-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf （Zr）-based high-k gate dielectrics based on PVD （physical vapor deposition） process. This article begins with a survey of various methods developed for generating Hf （Zr）-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf （Zr）-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf （Zr）-based high-k gate dielectrics.

关键词： Hf (Zr)-based high-k gate dielectric PVD Optical properties metal-oxide-semiconductor

Effect of excitation intensity on fluorescence spectra in ZnO nanostructures and its origin

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Science China(Physics,Mechanics & Astronomy) 2009年第1期52卷 4-12页

作者： zhang YuGang zhang lide Key Laboratory of Materials Physics Anhui Key Laboratory of Nanomaterials and NanotechnologyInstitute of Solid State PhysicsChinese Academy of SciencesHefei 230031China

ZnO nanostructures with three kinds of morphologies, namely,tetrapod-,rod-,and sheet-like shape, are synthesized by chemical vapor deposition, conventional solution-phase,and hydrothermal methods, *** fluorescence measurements display that the spectra of these nanostructures exhibit similar unexpected change laws with the altering excitation intensity. It is observed that when the excitation intensity increases, for the green emission band,the peak position shows a small blue-shift, the width turns broader,and the intensity grows first stronger and then weaker;for the UV emission band, the peak position exhibits a significant red-shift,and the width and intensity have the similar behaviors with those of the green ***,the relative intensity of green emission to UV emission decreases *** is clarified that the origin of this abnormal phenomenon is ascribed to the local laser heating effect and the high sensitivity of nanostructures to this heating effect.

关键词： ZnO nanostructure fluorescence spectra excitation intensity heating effect

Semiconductor optical features of silver/silica mesoporous composite

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Chinese Science Bulletin 1998年第7期43卷 614-615页

作者： Cai, Weiping zhang, lide Institute of Solid State Physics Chinese Academy of Sciences Hefei China

Lattice distortion of nanoscale silver particles

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Chinese Science Bulletin 1998年第3期43卷 201-204页

作者： Wei zhang Xiaoyin Qin lide zhang Chinese Acad Sci Hefei Inst Solid State Phys Hefei 230031 Peoples R China

The lattice distortion of nanoscale silver particles prepared is studied by using the chemical method. The particles lattice contract was found, and the lattice contraction become greater while the particle size decre... 详细信息

关键词： nanoscale lattice distortion surface tension grain boundary.

Influence of dielectrics with light absorption on the photonic bandgap of porous alumina photonic crystals

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Nano Research 2016年第3期9卷 703-712页

作者： Guoliang Shang Guangtao Fei Yue Li lide zhang Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures Institute of Solid State PhysicsHefei Institutes of Physical Science Chinese Academy of Sciences P. O. Box 1129 Hefei 230031 China

In this work, the influences of dielectrics with light absorption on the photonic bandgaps （PBGs） of porous alumina photonic crystals （PCs） were studied. Transmittance spectra of porous alumina PCs adsorbing ethanol showed that all the PBGs positions red-shifted; however, the transmittance of the PBG bottom showed different trends when the PBGs were located in different wavelength regions. In the near infrared region, liquid ethanol has strong light absorption, and, with the increase in adsorption, the PBG bottom transmittance of porous alumina PCs first increased and then decreased. However, in the visible light region, liquid ethanol has little light absorption, and thus, with the increase in adsorption, the PBG bottom transmittance of porous alumina PCs increased gradually all the time. Simulated results were consistent with the experimental results. The capillary condensation of organic vapors in the pores of porous alumina accounted for the change in the PBG bottom transmittance. The non- negligible light absorption of the organic vapors was the cause of the decrease in the transmittance. The results for porous alumina PC adsorbing methanol, acetone, and toluene further confirmed the influences of light absorption on the PBG bottomed transmittance.

关键词： photonic crystals porous materials light-mater interaction capillary condensation nanotechnology

Anomalous Dielec trie Behavior in Nanome ter-Sized Amorphous Silicon Nitride

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Chinese Physics Letters 1993年第11期10卷 676-679页

作者： WANG Tao zhang lide MOU Jimei Institute of Solid State Physics Academia Sinic&Hefei 230031 Department of Material Science and Engineering University of Science and Technology of Chinaf Hefei 230026

An anomalous dielectric behavior in nanometer-sized amocthous silicon nitride is reported. The dielectric constant of nanometer-sized ajnorph. silicon nitride has strong dependence on frequency at room temperature (RT),which is completely different from the conventional coarse-grain silicon nitride. The maximum of the dielectric constant of nanometer-sized amorphous silicon nitride at KT is about 40 times larger than that of the conventional silicon nitride. The anomalous dielectric behavior is explained by a kind of mech&nism of *** that is, interfacial polarization.

关键词： grain sized behavior

Ultraviolet photoluminescence of porous anodic alumina films

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Chinese Science Bulletin 2003年第11期48卷 1090-1092页

作者： GAO Tao MENG Guowen zhang lide Institute of Solid State Physics Chinese Academy of SciencesInstitute of Solid State Physics Chinese Academy of SciencesInstitute of Solid State Physics Chinese Academy of Sciences Hefei 230031 China Hefei 230031 China Hefei 230031 China

Photoluminescence (PL) properties of porous anodic alumina (PAA) films prepared by using electrochemical anodization technique in a mixed solution of oxalic and sulfuric acid have been investigated. The PAA films have an intensive ultraviolet PL emission around 350 nm, of which a possible PL mechanism has been proposed. It was found that the incorporated oxalic ions, which could transform into PL centers and exist in the PAA films, are responsible for this ultraviolet PL emission.

关键词：光致发光紫外线辐射 PAA 阳极氧化铝薄膜多孔渗水薄膜

Preparation and optical properties of composite thin films with embedded InP nanoparticles

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Chinese Science Bulletin 2001年第6期46卷 461-466页

作者： Maojun Zheng lide zhang Guanghai Li Zhi Jiang Chinese Acad Sci Inst Solid State Phys Hefei 230031 Peoples R China

InP nanoparticles embedded in SiO2 thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The average size of InP nanoparticles is in the range of 3-10 nm. The broadening and red shift of the Raman peaks were observed, which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the opticalabsorption edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum confinement effect. The theoretical values of the blue shift predicted by the effective mass approximation model are different from the experimental results for the InP-SiO2 system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not

关键词： nanocomposite thin film sputtering phonon confine- ment effect quantum confinement effect.