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Journal of Materials Science & Technology 2008年第2期24卷 179-182页

作者： Hui LIN Junsheng YU shuangling lou Jun WANG Yadong JIANG State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China （UESTC） Chengdu 610054 China

Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.

关键词： Inverted top-emitting organic light-emitting diodes Indium-tin-oxide Ultrathin film DC sputtering

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

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Journal of Materials Science & Technology 2009年第1期25卷 119-122页

作者： Hui Lin Junsheng Yu Nana Wang shuangling lou Yadong Jiang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China （UESTC） Chengdu 610054 China

Indium tin oxide （ITO） thin films deposited on flexible polyethylene terephthalate （PET） substrates at low temperature by DC magnetron sputtering from an In-Sn （90-10 wt pct） alloy target were studied. The correla- tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes （FOLEDs）. The fabricated FOLEDs with a structure of PET/ITO/NPB （50 nm）/Alq （20 nm）/Mg：Ag （100 nm） showed a maximum luminance of 2125 cd/m^2 at 13 V.

关键词： Flexible Organic light-emitting diodes Indium tin oxide DC sputtering

Influences of fluorine auxochrome in fluorene molecular electroluminescent material on optoelectronic property

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Chinese Science Bulletin 2008年第19期53卷 2940-2945页

作者： lou shuangling YU dunSheng JIANG YaDong GUO GuoJun ZHANG Qing State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Elec-tronic Science and Technology of China (UESTC) Chengdu 610054 China Department of Polymer Science School of Chemistry and Chemical Technology Shanghai Jiao Tong University Shanghai 200240China

The UV-Vis absorption and photoluminescence (PL) spectra of 2,3-bis(9,9-dihexyl-9H-fluoren-2-yl) quinoxaline (Py), 2,3-bis(9,9-dihexyl-9H-fluoren-2-yl)-6,7-difluoroquinoxaline (F2Py) and 2,3-bis(9,9- dihexyl-9H-fluoren-2-yl)-5,6,7,8-tetrafluoroquinoxaline (F4Py), which are fluorene molecular derivatives with conjugated structure, were investigated. For further investigation of the influences of fluorine auxochrome in fluorene molecular electroluminescent material on optoelectronic property, the elec- troluminescence (EL) characteristics of materials were studied by double-layer organic light-emitting diodes (OLEDs) using N,N'-Di-[(1-naphthalenyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB) as a hole transporting layer (HTL) with the conventional vacuum deposition method. The results showed that the absorption and PL spectra of materials in film state red shifted with fluorine substituents in- creased in molecule configuration. The performance of OLEDs is as follows: at a bias voltage of 5 V, Py emitted a blue-green light at 508 nm with the Commission Internationale d'Eclairage (CIE) coordinates of (0.23, 0.43) and full width at half maximum (FWHM) of 100 nm. The device had a turn-on voltage (de- fined as the drive voltage at the luminance of 1 cd/m2) of 4.8 V, a luminance of 129 cd/m2 with a current density of 59 mA/cm2 at 10 V, and a maximum luminous efficiency of 0.18 lm/W at 5.4 V. F2Py and F4Py emitted a green light peaking at 544 nm and a yellow light at 570 nm at 5 V, with the CIE coordinates of (0.38, 0.56) and (0.44, 0.49), and FWHM of 103 and 117 nm, respectively. The F2Py and F4Py devices had a turn-on voltage of 4 and 2 V, a luminance of 557 and 3300 cd/m2 with a current density of 100 and 880 mA/cm2 at 10 V, and a maximum luminous efficiency of 0.22 lm/W at 7.6 V and 0.53 lm/W at 2 V, respectively.

关键词：助色团芴分子电致发光光电子学

Study on temperature characteristics of organic light-emitting diodes based on tris-(8-hydroxylquinoline)-aluminum

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Chinese Science Bulletin 2008年第4期53卷 624-631页

作者： SUO Fan YU JunSheng LI WeiZhi lou shuangling DENG Jing JIANG YaDong State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of ElectronicScience and Technology of China Chengdu 610054 China

Both single-layer and double-layer organic light-emitting devices based on tris-(8-hydroxylquinoline)-aluminum(Alq3) as emitter are fabricated by thermal vacuum *** electroluminescent characteristics of these devices at various temperatures are measured,and the temperature characteristics of device performance are *** effect of temperature on device current conduction regime is analyzed in *** results show that the current-voltage(I-V) characteristics of devices are in good agreement with the theoretical prediction of trapped charge limited current(TCLC).In addition,both the charge carrier mobility and charge carrier concentration in the organic layer increase with the rise of temperature,which results in the monotonous increase of Alq3 device *** current conduction mechanisms of two devices at different temperatures are identical,but the exponent m in current-voltage equation changes randomly with *** device luminance increases slightly and the efficiency decreases monotonously due to the aging of Alq3 luminescent properties caused by high temperature.A tiny blue shift can be observed in the electroluminescent(EL) spectra as the temperature increases,and the reduction of device monochromaticity is caused by the intrinsic characteristics of organic semiconductor energy levels.

关键词：有机发光二极管温度载流子活性三-(8-羟基喹啉)铝

Organic electroluminescent characteristics of PS:NPB composite hole transporting layer

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Frontiers of Optoelectronics 2008年第Z2期1卷 323-328页

作者： Fan SUO Junsheng YU Jing DENG shuangling lou Yadong JIANG State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China

Green organic light-emitting devices with a structure of indium-tin-oxide(ITO)/polystyrene(PS):N,N'-bis-(3-naphthyl)-N,N'-biphenyl-(1,1'-biphenyl)-4,4'-diamine(NPB)/tris-(8-hydroxyquinoline)-aluminum(Alq3)/Mg:Ag were fabricated. A doping system consisting of small-molecular hole transporting material NPB and polymeric matrix PS was applied as a composite hole transporting layer(HTL), and the thin film preparation was simplified via spin-coating technique. By adjusting the component ratio of the doping system, several devices with different concentration proportion of PS:NPB are constructed. The electroluminescent characteristics of the devices were investigated and discussed. This study demonstrated that the difference of doping concentration of NPB has a remarkable impact on the optoelectronic performance of both HTL and the devices. Optimum device performance can be obtained by choosing a suitable concentration proportion of PS:NPB at 1:1. This study contributes to the construction of composite functional layers of organic light-emitting diode(OLED)devices and to the technical modification.

关键词： organic light-emitting device N , N ′-bis-(3-naphthyl)- N , N ′-biphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) polystyrene composite hole transporting layer device performance

基于新型空穴传输材料的有机电致发光器件的研究

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光学学报 2007年第8期27卷 1455-1459页

作者：娄双玲于军胜黎威志李青王军蒋亚东电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室成都610054

利用真空蒸镀方法以N2,N7-二(间甲苯胺基)-N2,N7-二苯基-2,7-二胺基-9,9-二甲基芴[2,7-bis(pmethoxyphenyl-m-t′olylamino)-9,9-dimethylfluorene,TPF-OMe]为空穴传输层、8-羟基喹啉铝[tris(8-hydroxyquinolinato)aluminum,Alq3)]作为发光层及电子传输层,制备了双层器件。与制作的典型双层结构N,N′-二苯基-N,N′-二(3-甲基苯基)-1,1′-联苯-4,4′-二胺[N,N-′biphenyl-N,N′-bis-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine,TPD/Alq3]器件相比,电流密度较大,发光效率低,发光谱峰为516 nm,色坐标为(0.30,0.53),为Alq3材料发光。以TPF-OMe为发光层兼空穴传输层,2,9-二甲基-4,7-二苯基-1,10-菲罗啉(2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline,bathocuproine或BCP)为空穴阻挡层,Alq3为电子传输层,制作三层有机电致发光器件。结果表明,光谱峰值在414 nm,色坐标为(0.20,0.24),为蓝色光,是TPF-OMe材料本身发光,器件在15 V电压下电流密度为1137 mA/cm2,亮度为900 cd/m2,在3 V偏压下有最大流明效率,为0.11 lm/W。基于TPF-OMe材料的器件的击穿温度比基于TPD材料的器件高近20℃,原因可能在于TPF-OMe材料比TPD材料高19℃的玻璃化转变温度(Tg)。

关键词：光学材料有机电致发光器件新型空穴传输材料真空蒸镀蓝光