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Broadband third-order optical nonlinearities of layered franckeite towards mid-infrared regime

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Chinese Physics B 2024年第10期33卷 275-281页

作者： Zhi-Qiang xu tian-tian Zhou Jie Li Dong-Yang liu Yuan He ning Li Xiao liu Li-Li Miao Chu-Jun Zhao Shuang-Chun Wen key laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial key laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Mechanical and Electrical engineering Heze UniversityHeze 274015China

The study of nonlinear optical responses in the mid-infrared(mid-IR)regime is essential for advancing ultrafast mid-IR laser ***,nonlinear optical effects under mid-IR excitation are rarely reported due to the lack of suitable nonlinear optical *** natural van derWaals heterostructure franckeite,known for its narrow bandgap and stability in air,shows great potential for developing mid-IR nonlinear optical *** have experimentally demonstrated that layered franckeite exhibits a broadband wavelength-dependent nonlinear optical response in the mid-IR spectral *** nanosheets were prepared using a liquid-phase exfoliation method,and their nonlinear optical response was characterized in the spectral range of 3000 nm to 5000 *** franckeite nanosheets exhibit broadband wavelengthdependent third-order nonlinearities,with nonlinear absorption and refraction coefficients estimated to be about 10^(-7)cm/W and 10^(-11)cm^(2)/W,***,a passively Q-switched fluoride fiber laser operating around a wavelength of 2800 nm was achieved,delivering nanosecond pulses with a signal-to-noise ratio of 43.6 dB,based on the nonlinear response of *** findings indicate that layered franckeite possesses broadband nonlinear optical characteristics in the mid-IR region,potentially enabling new possibilities for mid-IR photonic devices.

关键词： third-order optical nonlinearities franckeite mid-infrared Q-switching

Solution-processed all-inorganic lead halide perovskite/layered double hydroxides superlattices

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science China Chemistry 2024年第9期67卷 2904-2910页

作者： Deyu Li Mingming Zhang Lulu Wei Shubing tian Mingze Sun Kang liu Jixiang xu Lei Wang Jun Xing key laboratory of Eco-chemical engineering Ministry of EducationCollege of Chemistry and Molecular EngineeringQingdao University of Science&TechnologyQingdao 266042China College of Sino-German science and Technology Qingdao University of Science&TechnologyQingdao 266042China

Quantum wells and superlattices are key building blocks in the semiconductor industry,normally fabricated using epitaxial growth techniques,such as vapor phase epitaxy,metalorganic chemical vapor deposition and molecular beam ***,these complicated preparation processes,as well as their high cost,limit their extensive *** is essential to develop a simple solution process for building ***,we demonstrate an ion exchange strategy for synthesizing an allinorganic superlattice cesium lead bromide/layered double hydroxides(CsPbBr_3/LDH)in *** room temperature,the perovskite ions diffuse into the interlayer of LDH and assemble into layered perovskite with various *** with traditional organic-inorganic hybrid perovskite superlattice,the all-inorganic perovskite superlattice CsPbBr_(3)/LDH has weak quantum confinement,which exhibits narrow emission line-widths of 20 nm,high quantum yields of 55%,and radiative lifetimes of several *** findings offer a new route to synthesize novel perovskite superlattices and enrich the perovskite supercrystal platform for electronics,photonics and optoelectronics devices.

关键词： halide perovskite superlattice layered double hydroxides 2D

Resonant Beam Communications:A New Design Paradigm and Challenges

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Journal of Communications and Information Networks 2024年第1期9卷 80-87页

作者： Yuanming tian Dongxu Li Chuan Huang Qingwen liu Shengli Zhou Future Network of Intelligence Institute and School of science and engineering the Chinese University of Hong KongShenzhen 518172China School of science and engineering and the Future Network of Intelligence Institute the Chinese University of Hong KongShenzhen 518172China College of electronics and Information engineering Tongji UniversityShanghai 201804China department of Electrical and Computer engineering University of ConnecticutStorrsCT 06250USA

Resonant beam communications (RBCom), which adopts oscillating photons between two separate retroreflectors for information transmission, exhibits potential advantages over other types of wireless optical communications (WOC). However, echo interference generated by the modulated beam reflected from the receiver affects the transmission of the desired information. To tackle this challenge, a synchronization-based point-to-point RBCom system is proposed to eliminate the echo interference, and the design for the transmitter and receiver is discussed. Subsequently,the performance of the proposed RBCom is evaluated and compared with that of visible light communications(VLC)and free space optical communications (FOC). Finally, future research directions are outlined and several implementation challenges of RBCom systems are highlighted.

关键词： resonant beam communications(RBCom) wireless optical communications(WOC) echo interference elimination mobility multiple access

Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU tiange ZHAO Qi ZHANG Mingsheng xu Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu liu Can liu Chunsen liu Guanyu liu Kaihui liu Liwei liu Sheng liu Yuan liu Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing ning Anlian PAN tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao tian Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic science and engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit science and engineering Nanjing University of Posts and Telecommunications State key laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS key laboratory of Nanophotonic Materials and Devices & key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical engineering Hunan University key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

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Nano-Micro Letters 2024年第12期16卷 134-188页

作者： Jing Chen Ming-Yuan Sun Zhen-Hua Wang Zheng Zhang Kai Zhang Shuai Wang Yu Zhang Xiaoming Wu tian-Ling Ren Hong liu Lin Han Institute of Marine science and Technology Shandong UniversityQingdao 266237ShandongPeople’s Republic of China School of Integrated Circuits and Beijing National Research Center for Information science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China BNRist Tsinghua UniversityBeijing 100084People’s Republic of China State key laboratory of Crystal Materials Shandong UniversityJinan 250100ShandongPeople’s Republic of China Shenzhen Research Institute of Shandong University Shenzhen 518057People’s Republic of China Shandong engineering Research Center of Biomarker and Artificial Intelligence Application Jinan 250100People’s Republic of China

Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor *** capability may overcome the short-channel effect,sparking significant advancements in electronic devices that utilize 2D *** the dimension and performance limits of transistors based on 2D TMDs has gained substantial *** review provides a comprehensive investigation into these limits of the single 2D-TMD *** delves into the impacts of miniaturization,including the reduction of channel length,gate length,source/drain contact length,and dielectric thickness on transistor operation and *** addition,this review provides a detailed analysis of performance parameters such as source/drain contact resistance,subthreshold swing,hysteresis loop,carrier mobility,on/off ratio,and the development of p-type and single logic *** review details the two logical expressions of the single 2D-TMD logic transistor,including current and *** also emphasizes the role of 2D TMD-based transistors as memory devices,focusing on enhancing memory operation speed,endurance,data retention,and extinction ratio,as well as reducing energy consumption in memory devices functioning as artificial *** review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic *** review not only summarizes the current state of the art in this field but also highlights potential future research directions and *** underscores the anticipated challenges,opportunities,and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

关键词： Two-dimensional transistors Dimension limits Performance limits Memory devices Artificial synapses

Grain boundary engineering for enhancing intergranular damage resistance of ferritic/martensitic steel P92

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Nuclear science and Techniques 2024年第5期35卷 186-199页

作者： Lei Peng Shang-Ming Chen Jing-Yi Shi Yong-Jie Sun Yi-Fei liu Yin-Zhong Shen Hong-Ya He Hui-Juan Wang Jie tian State key laboratory of Particle Detection and electronics University of Science and Technology of ChinaHefei 230026China School of Nuclear science and Technology University of Science and Technology of ChinaHefei 230027China School of Materials engineering Shanghai University of Engineering Science333 Long Teng RoadShanghai 201620China Experimental Center of engineering and Material science University of Science and Technology of ChinaHefei 230026China

Ferritic/martensitic(F/M)steel is widely used as a structural material in thermal and nuclear power ***,it is susceptible to intergranular damage,which is a critical issue,under service *** this study,to improve the resistance to intergranular damage of F/M steel,a thermomechanical process(TMP)was employed to achieve a grain boundary engineering(GBE)microstructure in F/M steel *** TMP,including cold-rolling thickness reduction of 6%,9%,and 12%,followed by austenitization at 1323 K for 40 min and tempering at 1053 K for 45 min,was applied to the as-received(AR)P92 *** prior austenite grain(PAG)size,prior austenite grain boundary character distribution(GBCD),and connectivity of prior austenite grain boundaries(PAGBs)were *** to the AR specimen,the PAG size did not change *** fraction of coincident site lattice boundaries(CSLBs,3≤Σ≤29)and Σ3^(n) boundaries along PAGBs decreased with increasing reduction ratio because the recrystallization fraction increased with increasing reduction *** PAGB connectivity of the 6%deformed specimen slightly deteriorated compared with that of the AR ***,potentiodynamic polarization studies revealed that the intergranular damage resistance of the studied steel could be improved by increasing the fraction of CSLBs along the PAGBs,indicating that the TMP,which involves low deformation,could enhance the intergranular damage resistance.

关键词： Grain boundary engineering Ferritic/martensitic steel Prior austenite grain boundary character distribution Grain boundary connectivity Intergranular damage resistance

A review of Al-based material dopants for high-performance solid state lithium metal batteries

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Journal of Energy Chemistry 2024年第11期 244-261页

作者： Ying tian Weicui liu tianwei liu Xiaofan Feng Wenwen Duan Wen Yu Hongze Li Nanping Deng Weimin Kang key laboratory of Advanced Textile Composites Ministry of Education of China Tiangong University School of Textile science and engineering Tiangong University School of electronics and Information engineering Tiangong University

As the world transitions to green energy, there is a growing focus among many researchers on the requirement for high-efficient and safe batteries. Solid-state lithium metal batteries(SSLMBs) have emerged as a promising alternative to traditional liquid lithium-ion batteries(LIBs), offering higher energy density, enhanced safety, and longer lifespan. The rise of SSLMBs has brought about a transformation in energy storage, with aluminum(Al)-based material dopants playing a crucial role in advancing the next generation of batteries. The review highlights the significance of Al-based material dopants in SSLMBs applications, particularly its contributions to solid-state electrolytes(SSEs), cathodes, anodes,and other components of SSLMBs. Some studies have also shown that Al-based material dopants effectively enhance SSE ion conductivity, stabilize electrode and SSE interfaces, and suppress lithium dendrite growth, thereby enhancing the electrochemical performance of SSLMBs. Despite the above mentioned progresses, there are still problems and challenges need to be addressed. The review offers a comprehensive insight into the important role of Al in SSLMBs and addresses some of the issues related to its applications, endowing valuable support for the practical implementation of SSLMBs.

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Effect of quercetin on chronic enhancement of spatial learning and memory of mice

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science China(Life sciences) 2006年第6期49卷 583-590页

作者： liu jiancai1,YU Huqing2 & ning xinbao1 1. State key laboratory of modern acoustics,department of electronics science and engineering,Institute of Biological Medical Electronic engineering,Nanjing University,Nanjing 210093,China 2. department of Biology science and Technology,Nanjing University,Nanjing 210093,China State key laboratory of modern acoustics Department of Electronics Science and Engineering Institute of Biological Medical Electronic Engineering Nanjing University Nanjing 210093 China department of Biology science and Technology Nanjing University Nanjing 210093 China

In this study we evaluated the effect of quercetin on D-galactose-induced aged mice using the Morris water maze (MWM) test. Based on the free radical theory of aging, experiments were performed to study the possible biochemical mechanisms of glutathione (GSH) level; hydroxyl radical (OH ) in the hippocampus; cerebral cortex; the brain tissue enzyme activity of the mice. The results indicated that quercetin can enhance the exploratory behavior, spatial learning; memory of the mice. The effects relate with enhancing the brain functions; inhibiting oxidative stress by quercetin,; relate with increasing the GSH level; decreasing the OH content. These findings suggest that quercetin can work as a possible natural anti-aging pharmaceutical product.

关键词： quercetin aging learning memory free radical reactive oxygen species (ROS) glutathione (GSH)

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

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science China(Information sciences) 2024年第5期67卷 302-310页

作者： Jieyuan LIANG Zixing ZOU Junwu LIANG Di WANG Biao WANG Anshi CHU Jiali YI Cheng ZHANG Lizhen FANG tian ZHANG Huawei liu Xiaoli ZHU Dong LI Anlian PAN key laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometrics Hunan Institute of Optoelectronic IntegrationCollege of Materials Science and Engineering School of Physics and ElectronicsHunan University School of Electronic Information and Electrical engineering Changsha University School of Physics and Telecommunication engineering Yulin Normal University Units Semiconductor Technology Co. Ltd. School of Physics and electronics Hunan Normal University

Bilayer transition metal dichalcogenides（TMDs） balance the high mobility of single layers with the high state density of multilayers and therefore have promising application prospects in high-performance electronics. However, the layer-controlled growth of 2D materials is still confronted with challenges such as poor repeatability between different labs and a limited understanding of the growth mechanism at the atomic scale. Herein, we report a new carbon-assisted chemical vapor deposition process that can realize the growth of WS2sheets with high yield, precise thickness controllability, and repeatability. We show that carbon can act as a reducing agent and catalyst that preferentially reacts with the WO3precursor to form intermediate WO3-xproducts with low-valence state W. The resulting oxycarbide gas has a low surface adsorption energy when deposited on the surface of as-grown WS2, which provides nucleation sites for the subsequent layer of WS2growth and leads to the vertical growth of WS2sheets. The growth mechanism is thoroughly investigated. Electrical transport measurements show that the produced bilayer WS2possesses a high carrier mobility(up to 58 cm2·V-1·s-1) and small subthreshold swing（estimated to be 148 mV/decade）,which are among the best reported results for TMDs produced using CVD.

关键词： WS2 thickness-controlled growth chemical vapor deposition additive carbon