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A Review of Terahertz Sources Based on Planar Schottky Diodes

Chinese Journal of Electronics 2022年第3期31卷 467-487页

作者： KOU Wei liang shixiong ZHOU Hongji DONG Yazhou GONG Sen YANG Ziqiang ZENG Hongxin University of Electronic Science and Technology of China Yangtze Delta Region Institute (Huzhou) National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute

The special position of terahertz wave in the electromagnetic spectrum makes it possess the characteristics of orientation, broadband, penetration and low energy, which promotes the extensive research of terahertz wave in the fields of communication, radar, imaging,sensing, security inspection and so on. The solid-state terahertz sources based on semiconductor devices have attracted extensive attention in the field of terahertz information technology due to their characteristics such as being able to work at room temperature, being small in size, being easy to integrate and having good frequency stability. Terahertz planar Schottky diode is a kind of low parasitic semiconductor device. Its high cutoff frequency makes it work well in the terahertz range. The frequency multiplier based on planar Schottky diode is an important part of terahertz solid state source. In this review, the development of Schottky diodes technology in recent years have been introduced, including the structures and preparation of Schottky diodes. In addition, the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced,and the future development trend is discussed.

关键词： frequency multiplier terahertz range terahertz wave terahertz planar Schottky diode terahertz information technology terahertz solid state source semiconductor devices Schottky diodes good frequency stability security inspection frequency multipliers terahertz wave devices special position solid-state terahertz sources high cutoff frequency low parasitic semiconductor device Schottky diodes technology electromagnetic spectrum

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Dependence of the stability of organic light-emitting diodes on driving mode

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Chinese Science Bulletin 2011年第21期56卷 2210-2214页

作者： ZHANG WenWen WU ZhaoXin ZHANG XinWen liang shixiong JIAO Bo HOU Xun State Key Laboratory of Transient Optics and Photonics Xi’an Institute of Optics and Precision MechanicsChinese Academy of SciencesXi’an 710119China Key Laboratory for Physical Electronics and Devices of the Ministry of Education School of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China Key Laboratory of Photonics Technology for Information of Shaanxi Province School of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China

We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were used:copper phthalocyanine (CuPc) and 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MDTATA).It was found that the half-lives of devices using PC driving modes were different from those of comparable devices using DC driving *** the devices without HILs,with CuPc HILs and with MTDATA HILs,the half-lives of the devices were changed by factors of 1.91,1.41 and 0.86,respectively,when operated in PC rather than DC driving *** analysis of the electrical characteristics of the corresponding hole-only devices showed that the number of holes injected into devices was greatly reduced by inserting an m-MTDATA layer compared with other *** results indicate that different ratios of injected electrons and holes can be obtained in these ***,these ratios play a dominant role in the dependence of the stability of the device on the driving mode.

关键词：有机发光二极管驾驶模式稳定 ILS设备驱动模式脉冲电流 CuPc 电气特性

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High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

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Chinese Journal of Electronics 2024年第5期33卷 1196-1203页

作者： Yazhou DONG Tianchi ZHOU shixiong liang Guodong GU Hongji ZHOU Jianghua YU Hailong GUO Yaxin ZHANG School of Electronic Science and Engineering University of Electronic Science and Technology of China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute

The study focuses on the development of gallium nitride(GaN) Schottky barrier diode(SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

关键词： Couplings Schottky diodes Design methodology Schottky barriers Terahertz materials Power system harmonics Reflection

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Real-time programmable metasurface for terahertz multifunctional wave front engineering

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Light(Science & Applications) 2023年第9期12卷 1795-1806页

作者： Feng Lan Luyang Wang Hongxin Zeng shixiong liang Tianyang Song Wenxin Liu Pinaki Mazumder Ziqiang Yang Yaxin Zhang Daniel M.Mittleman Sichuan THz Communication Technology Engineering Research Center School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313000China Zhangjiang Laboratory Shanghai 201204China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China Aerospace Information Research Institute Chinese Academy of SciencesBeijing 100094China University of Chinese Academy of Sciences School of ElectronicElectrical and Communication EngineeringBeijing 101408China Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMI 48109USA School of Engineering Brown UniversityProvidenceRI 02912USA

Terahertz(THz)technologies have become a focus of research in recent years due to their prominent role in envisioned future communication and sensing *** of the key challenges facing the field is the need for tools to enable agile engineering of THz wave ***,we describe a reconfigurable metasurface based on GaN technology with an array-of-subarrays *** subwavelength-spaced array,under the control of a 1-bit digital coding sequence,can switch between an enormous range of possible configurations,providing facile access to nearly arbitrary wave front control for signals near 0.34 *** demonstrate wide-angle beam scanning with 1°of angular precision over 70 GHz of bandwidth,as well as the generation of multi-beam and diffuse wave fronts,with a switching speed up to 100 *** device,offering the ability to rapidly reconfigure a propagating wave front for beam-forming or diffusively scattered wide-angle coverage of a scene,will open new realms of possibilities in sensing,imaging,and networking.

关键词： wave scattered arbitrary

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Terahertz wide range phase manipulation with super-resolution precision by near-field nonlinear coupling of a digitally coding needle meta-chip

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Photonics Research 2024年第9期12卷 1868-1876页

作者： HUAJIE liang HONGXIN ZENG TIANCHI ZHOU HANYU ZHAO SHAOKANG GU LIN ZOU TAO JIANG LAN WANG FENG LAN shixiong liang ZHIHONG FENG ZIQIANG YANG YAXIN ZHANG Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Yangtze Delta Region Institute(Huzhou)University of Electronic Science and Technology of ChinaHuzhou 313001China Sichuan Engineering Center of Integrated Optoelectronic&Radio Meta-chips School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China National Key Laboratory of Solid-State Microwave Device and Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China Zhangjiang Laboratory Shanghai 201204China

Achieving ultra-precise wide-range terahertz(THz)phase modulation has been a long-standing challenge due to the short wavelength and sensitive phase of THz *** paper proposes a new ultra-high precision phase control method employing a digitally coding needle meta-chip embedded in a *** needle tips can effectively couple THz waves via the charge aggregation *** controlling the Schottky diodes with coding voltages,the charge on each meta-structure part can be tuned to form strong or weak resonances,producing phase ***,the massive charge accumulation and the sub-λ∕10 distance between needle tips lead to near-field coupling among multiple ***,modulation of the charge at each tip by multichannel coding voltages enables combined resonance tuning of THz waves,yielding a nonlinear phase ***,a meta-chip containing 8 needle meta-structure units is demonstrated,which breaks through the precision limitation of independent units and realizes super-resolution precision phase modulation similar to super-resolution *** the 213–227 GHz band,we achieve a phase shift exceeding 180°with 11.25°accuracy,and a phase shift of over 170°with an accuracy of 3°.This super-resolution phase modulation strategy provides a new idea for future highprecision applications of THz integrated systems.

关键词： tuning phase resolution

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Dynamic bifunctional THz metasurface via dual-mode decoupling

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Photonics Research 2022年第9期10卷 2008-2014页

作者： XUAN CONG HONGXIN ZENG SHIQI WANG QIWU SHI shixiong liang JIANDONG SUN SEN GONG FENG LAN ZIQIANG YANG YAXIN ZHANG Terahertz Science and Technology Research Center University of Electronic Science and Technology of ChinaChengdu 610000China College of Materials Science and Engineering Sichuan UniversityChengdu 610065China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Yangtze Delta Region Institute(HuZhou) University of Electronic Science and Technology of ChinaHuzhou 313001China

Metasurfaces have powerful light field manipulation capabilities and have been researched and developed extensively in various *** an increasing demand for diverse functionalities,terahertz(THz)metasurfaces are also expanding their *** particular,integrating different functionalities into a single device is a compelling domain in *** this work,we demonstrate a functionally decoupled THz metasurface that can incorporate any two functions into one metasurface and switch dynamically through external *** proposed metasurface is formed by the combination of split-ring resonators and phase change material vanadium dioxide(VO_(2)).It operates in the single-ring resonant mode and double-ring resonant mode with varying VO_(2)in insulating and metallic states,*** importantly,the phase modulation is independent in two operating modes,and both cover a 360°cross-polarized phase with efficient polarization *** characteristic makes it obtain arbitrary independent phase information on the metasurface with different modes to switch dual functions ***,we experimentally demonstrate the functions of a tunable focal length and large-angle focus deflection of a THz off-axis parabolic mirror to verify the dual-function switching characteristics of the functionally decoupled *** functionally decoupled metasurface developed in this work broadens the way for the research and application of multifunctional modulation devices in the THz band.

关键词： surface. functional resonant

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Ultrafast modulable 2DEG Huygens metasurface

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Photonics Research 2024年第5期12卷 1004-1015页

作者： HONGXIN ZENG XUAN CONG SHIQI WANG SEN GONG LIN HUANG LAN WANG HUAJIE liang FENG LAN HAOYI CAO ZHENG WANG WEIPENG WANG shixiong liang ZHIHONG FENG ZIQIANG YANG YAXIN ZHANG TIE JUN CUI Terahertz Communication Laboratory School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611730China Zhangjiang Laboratory Shanghai 201210China Yangtze Delta Region Institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313098China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China Institute of Electromagnetic Space and State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China

Huygens metasurfaces have demonstrated remarkable potential in perfect transmission and precise wavefront modulation through the synergistic integration of electric resonance and magnetic ***,prevailing active or reconfigurable Huygens metasurfaces,based on all-optical systems,encounter formidable challenges associated with the intricate control of bulk dielectric using laser equipment and the presence of residual thermal effects,leading to limitations in continuous modulation ***,we present an ultrafast electrically driven terahertz Huygens metasurface that comprises an artificial microstructure layer featuring a two-dimensional electron gas(2DEG)provided by an AlGaN/GaN heterojunction,as well as a passive microstructure *** precise manipulation of the carrier concentration within the 2DEG layer,we effectively govern the current distribution on the metasurfaces,inducing variations in electromagnetic resonance modes to modulate terahertz *** modulation mechanism achieves high efficiency and contrast for terahertz wave *** investigations demonstrate continuous modulation capabilities of up to 6 GHz,a modulation efficiency of 90%,a transmission of 91%,and a remarkable relative operating bandwidth of 55.5%.These significant advancements substantially enhance the performance of terahertz metasurface ***,our work not only enables efficient amplitude modulation but also introduces an approach for the development of high-speed and efficient intelligent transmissive metasurfaces.

关键词： heterojunction precise surface

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Arbitrary linear THz wave polarization converter with cracked cross meta-surface

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Chinese Optics Letters 2019年第4期17卷 80-83页

作者： Han Sun Lan Wang Yaxin Zhang shixiong liang Jiaguang Han Feng Lan Xinlan Zhou Ziqiang Yang Terahertz Science and Technology Research Center University of Electronic Science and Technology of China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Center for Terahertz Waves College of Precision Instrument and Optoelectronics Engineering Tianjin UniversityKey Laboratory of Optoelectronic Information Technology Ministry of Education

This Letter presents a double-layer structure combining a cracked cross meta-surface and grating surface to realize arbitrary incident linear terahertz(THz) wave polarization conversion. The arbitrary incident linear polarization THz wave will be induced with the same resonant modes in the unit cell, which results in polarization conversion insensitive to the linear polarization angle. Moreover, the zigzag-shaped resonant surface current leads to a strong magnetic resonance between the meta-surface and gratings, which enhances the conversion efficiency. The experimental results show that a more than 70% conversion rate can be achieved under arbitrary linear polarization within a wide frequency band. Moreover, around 0.89 THz nearly perfect polarization conversion is realized.

关键词： Letter presents structure combining polarization conversion

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Linear polarization conversion of transmitted terahertz wave with double-layer meta-grating surfaces

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Chinese Optics Letters 2018年第8期16卷 54-57页

作者： Han Sun Yaxin Zhang Kailong Wang Yuncheng Zhao Wei Kou shixiong liang Siaguang Han Ziqiang Yang Terahertz Science Cooperative Innovation Center University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Application Specific Integrated Circuit Hebei Semiconductor Research Institute Shijiazhuang 050051 China Center for Terahertz Waves College of Precision Instrument and Optoelectronics Engineering Tianjin University Key Laboratory of Optoelectronic Information Technology （Ministry of Education） Tianjin 300072 China

In this Letter, we demonstrate a linear polarization conversion of transmitted terahertz wave with double-layer meta-grating surfaces, which integrated the frequency selectivity of a split ring resonator metasurface and the polarization selectivity of a metallic grating surface. Since the double-layer can reduce the loss, and the Fabry- Perot like resonant effect between the two layers can improve the conversion efficiency, this converter can rotate the incident y-polarized terahertz wave into an x-polarized transmitted wave with relatively low loss and high efficiency. Experimental results show that an average conversion efficiency exceeding 75% from 0.25 to 0.65 THz with the highest efficiency of 90% at 0.43 THz with onlv -2 dB loss has been achieved.

关键词： Linear polarization conversion of transmitted terahertz wave with double-layer meta-grating surfaces THz

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Source-field-plated Ga_2O_3 MOSFET with a breakdown voltage of 550 V

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Journal of Semiconductors 2019年第1期40卷 77-79页

作者： Yuanjie Lü Xubo Song Zezhao He Yuangang Wang Xin Tan shixiong liang Cui Wei Xingye Zhou Zhihong Feng National Key Laboratory of Application Specific Integrated Circuit (ASIC) Hebei Semiconductor Research Institute

Ga_2O_3 metal–oxide–semiconductor field-effect transistors(MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-Ga_2O_3 film, which was grown by metal organic chemical vapor deposition(MOCVD) on an Fedoped semi-insulating(010) Ga_2O_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) Ga_2O_3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(ON)/I_(OFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.

关键词： Ga_2O_3 MOSFET breakdown voltage filed plate

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