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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui yin Haitao Xu Yunxia You Ningfei Gao Weihua zhang Hongwei liu Huanhuan Zhou Chen Wang lian-Mao Peng Zhiqiang li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China beijing Hua Tan Yuan Xin electronics Technology Co. Ltd.Beijing 101399China Institute of Carbon-based Thin Film electronics Peking UniversityShanxi 030012China key laboratory for the physics and {3. of {3. and Center for Carbon-based electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3.m carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3.m-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3.m-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 13. *** of the 3.m-CNTFETs-PDK was achieved through the successful design and tape-out of 153.standard cells and 3.3.stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3.95μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

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Science Bulletin 2012年第Z1期 135-148页

作者： zhang ZhiYong*,WANG Sheng & PENG lianMao key {3. for the physics and {3. of nanodevices and department of electronics,Peking University,beijing 100871,china

Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or *** n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and *** CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS *** with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated *** full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over *** adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3.00 cm2 V-1 s-1) and holes(3.00 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.

关键词： carbon nanotube field-effect transistor doping-free complementary metal-oxide-semiconductor high frequency

Doping-free carbon nanotube optoelectronic devices

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Science Bulletin 2012年第Z1期 149-156页

作者： WANG Sheng*,zhang ZhiYong & PENG lianMao* key {3. for the physics and {3. of nanodevices,department of electronics,Peking University,beijing 100871,china

Semiconducting carbon nanotubes(CNTs) possess outstanding electrical and optical properties because of their special one-dimen-sional(1D) *** are direct bandgap materials,which makes them ideal for use in optoelectronic devices,*** emitters and light *** determine their light absorption and light emission processes due to the strong Coulomb interactions between electrons and holes in *** this paper,we review recent progress in CNT photodetectors,photovoltaic devices and light *** particular,we focus on the doping-free CNT optoelectronic devices developed by our group in recent years.

关键词： carbon nanotube diode photodetector LED solar cell doping-free

Highly efficient solution-processed organic photovoltaics enabled by improving packing behavior of organic semiconductors

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Science china chemistry 2024年第3期67卷 890-897页

作者： Xinyue Cui Hongxiang li Hao Lu Yuqiang liu Guangliu Ran Rui liu Huarui zhang Xueqing Ma Dawei li Yi lin Jifa Yu Wenkai zhang Lei Cai Yahui liu Pei Cheng Andong zhang Zaifei Ma Guanghao Lu Zhishan Bo College of Textiles and Clothing State Key Laboratory of Bio-fibers and Eco-textilesQingdao UniversityQingdao 266071China State key laboratory of Polymer Materials Engineering College of Polymer Science and EngineeringSichuan UniversityChengdu 610065China department of physics and Applied Optics {3. Area Major {3. Center for Advanced Quantum StudiesBeijing Normal UniversityBeijing 100875China Shandong Province key laboratory of Medical physics and Image Processing Technology School of Physics and ElectronicsShandong Normal UniversityJinan 250014China beijing key laboratory of Energy Conversion and Storage Materials College of ChemistryBeijing Normal UniversityBeijing 100875China Center for Advanced Low-Dimension Materials State Key Laboratory for Modification of Chemical Fibers and Polymer MaterialsCollege of Materials Science and EngineeringDonghua UniversityShanghai 201620China Frontier Institute of Science and Technology Xi'an Jiaotong UniversityXi'an 710054China

Solution processability is a unique property of organic semiconductors. The compact and regular π-π stacking between molecules is paramount in the performance of organic optoelectronic devices. However, it is still a challenge to improve their stacking quality without sacrificing the solution-processability from the aspect of materials design. Here, delicately engineered additives are presented to promote the formation of ordered aggregation of conjugated molecules by regulating their nucleation and growth dynamics. Intriguingly, the long-chain BTP-eC9-4F molecules can realize ordered aggregation comparable to short-chain ones without sacrificing processability. The domain size of BTP-eC9-4F aggregation is enlarged from 24.2 to 3..2 nm in blend *** exciton diffusion and charge transport become faster, contributing to the suppression of recombination losses. As a result, a power conversion efficiency of 19.2% is achieved in D18:BTP-eC9-4F based organic photovoltaics. Our findings demonstrate a facile strategy to improve the packing quality of solution-processed organic semiconductors for high-efficiency photovoltaics and beyond photovoltaics.

关键词： organic semiconductor organic photovoltaic charge transport solution processability

Study of the response of 10B-doped MCP to wide-energy range neutrons from eV to MeV

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Nuclear Science and Techniques 2024年第8期35卷 132-141页

作者： Qiang li li‑Jiao Wang Xiang‑Biao Qiu Jing‑Wen li Wei Xu Tao li Ze‑Bin lin Chang‑Jun Ning Yong‑Hao Chen Rui‑Rui Fan Kang Sun Jing‑Yu Tang Rong zhang Han‑Tao Jing Bo Mei Qi An Hao‑Fan Bai Jiang‑Bo Bai Jie Bao Ping Cao Qi‑Ping Chen Zhen Chen Zeng‑Qi Cui An‑Chuan Fan Chang‑Qing Feng Fan‑Zhen Feng Ke‑Qing Gao Min‑Hao Gu Chang‑Cai Han Zi‑Jie Han Guo‑Zhu He Yong‑Cheng He Yang Hong Yi‑Wei Hu Han‑Xiong Huang Wei‑Hua Jia Hao‑Yu Jiang Wei Jiang Zhi‑Jie Jiang Zheng‑Yao Jin ling Kang Bo li Chao li Gong li Jia‑Wen li Xiao li Yang li Jie liu Rong liu Shu‑Bin liu Guang‑Yuan Luan Bin‑Bin Qi Jie Ren Zhi‑Zhou Ren Xi‑Chao Ruan Zhao‑Hui Song Zhi‑Xin Tan Sheng‑Da Tang Peng‑Cheng Wang Zhao‑Hui Wang Zhong‑Wei Wen Xiao‑Guang Wu Xuan Wu li‑Kun Xie Yi‑Wei Yang Han Yi Yong‑Ji Yu Guo‑Hui zhang lin‑Hao zhang Mo‑Han zhang Qi‑Wei zhang Xian‑Peng zhang Yu‑liang zhang Yue zhang Zhi‑Yong zhang Mao‑Yuan Zhao Lu‑Ping Zhou Zhi‑Hao Zhou Ke‑Jun Zhu Institute of High Energy physics Chinese Academy of Sciences(CAS)Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China State key laboratory of Particle Detection and electronics Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China Dongguan Songshan Lake Future School Dongguan 523808China North Night Vision Science&Technology(Nanjing)Research Institute Co.Ltd. Nanjing 211106China Sino‑French Institute of Nuclear Engineering and Technology Sun Yat-sen UniversityZhuhai 519082China School of Nuclear Science and Technology University of Science and Technology of ChinaHefei 230027China State key laboratory of Particle Detection and electronics University of Science and Technology of ChinaHefei 230026China department of Modern physics University of Science and Technology of ChinaHefei 230026China State key laboratory of Nuclear physics and Technology School of PhysicsPeking UniversityBeijing 100871China Institute of Nuclear physics and chemistry China Academy of Engineering PhysicsMianyang 621900China key laboratory of Nuclear Data China Institute of Atomic EnergyBeijing 102413China USTC Archaeometry Lab University of Science and Technology of ChinaHefei 230026China Northwest Institute of Nuclear Technology Xi’an 710024China University of Chinese Academy of Sciences Beijing 100049China

Neutron-sensitive microchannel plates(nMCPs)have applications in neutron detection,including energy spectrum measurements,neutron-induced cross sections,and neutron imaging.10B-doped MCPs(B-MCPs)have attracted significant attention owing to their potential for exhibiting a high neutron detection efficiency over a large neutron energy *** spatial and temporal resolutions are useful for neutron energy-resolved ***,their practical applications still face many technical *** this study,a B-MCP with 10 mol%10B was tested for its response to wide-energy neutrons from eV to MeV at the Back-n white neutron source at the china Spallation Neutron *** neutron detection efficiency was calibrated at 1 eV,which is approximately 3.0 times that of an ordinary MCP and indicates the success of 10 B *** factors that caused the reduction in the detection efficiency were simulated and *** neutron energy spectrum obtained using B-MCP was compared with that obtained by other measurement methods,and showed very good consistency for neutron energies below tens of *** response is more complicated at higher neutron energy,at which point the elastic and nonelastic reactions of all nuclides of B-MCP gradually become *** is beneficial for the detection of neutrons,as it compensates for the detection efficiency of B-MCP for high-energy neutrons.

关键词： Neutron radiation image 10B-doped MCP Neutron response Wide-energy range neutrons

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

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Science china(Information Sciences) 2024年第5期67卷 302-310页

作者： Jieyuan liANG Zixing ZOU Junwu liANG Di WANG Biao WANG Anshi CHU Jiali YI Cheng {3. lizhen FANG Tian {3. Huawei liU Xiaoli ZHU Dong li Anlian PAN key laboratory for Micro-Nano physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometrics Hunan Institute of Optoelectronic IntegrationCollege of Materials Science and Engineering School of Physics and ElectronicsHunan University School of Electronic Information and Electrical Engineering Changsha University School of physics and Telecommunication Engineering Yulin Normal University Units Semiconductor Technology Co. Ltd. School of physics and electronics Hunan Normal University

Bilayer transition metal dichalcogenides（TMDs） balance the high mobility of single layers with the high state density of multilayers and therefore have promising application prospects in high-performance electronics. However, the layer-controlled growth of 2D materials is still confronted with challenges such as poor repeatability between different labs and a limited understanding of the growth mechanism at the atomic scale. Herein, we report a new carbon-assisted chemical vapor deposition process that can realize the growth of WS2sheets with high yield, precise thickness controllability, and repeatability. We show that carbon can act as a reducing agent and catalyst that preferentially reacts with the WO3.recursor to form intermediate WO3.xproducts with low-valence state W. The resulting oxycarbide gas has a low surface adsorption energy when deposited on the surface of as-grown WS2, which provides nucleation sites for the subsequent layer of WS2growth and leads to the vertical growth of WS2sheets. The growth mechanism is thoroughly investigated. Electrical transport measurements show that the produced bilayer WS2possesses a high carrier mobility(up to 58 cm2·V-1·s-1) and small subthreshold swing（estimated to be 148 mV/decade）,which are among the best reported results for TMDs produced using CVD.

关键词： WS2 thickness-controlled growth chemical vapor deposition additive carbon

Marangoni-flow-assisted assembly of single-walled carbon nanotube films for human motion sensing

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Fundamental Research 2024年第3期4卷 570-574页

作者： Yuguang Chen Yitan li Lu Han Hao Sun Min Lyu Zeyao zhang Shigeo Maruyama Yan li key laboratory for the physics and {3. of {3. Beijing National Laboratory of Molecular SciencesState Key Laboratory of Rare Earth Materials Chemistry and ApplicationsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Bruker(beijing)Scientific Technology Co.Ltd. Beijing 100192China department of Mechanical Engineering The University of TokyoTokyo 113-8656Japan Peking University Shenzhen Institute Shenzhen 518057China PKU-HKUST ShenZhen-HongKong Institution Shenzhen 518057China

Single-walled carbon nanotubes(SWCNTs)present excellent electronic and mechanical properties desired in wearable and flexible *** preparation of SWCNT films is the first step for fabricating various *** work developed a scalable and feasible method to assemble SWCNT thin films on water surfaces based on Marangoni flow induced by surface tension *** films possess a large area of 40 cm×3. cm(extensible),a tunable thickness of 15∼150 nm,a high transparency of up to 96%,and a decent *** are ready to be directly transferred to various substrates,including flexible *** strain sensors were fabricated with the films on flexible *** sensors worked with high sensitivity and *** realizing multi-functional human motion sensing,including responding to voices,monitoring artery pulses,and detecting knuckle and muscle actions,the assembled SWCNT films demonstrated the potential for application in smart devices.

关键词： Single-walled carbon nanotubes Marangoni flow Assembly Interfaces Sensors

10B-doped MCP detector developed for neutron resonance imaging at Back-n white neutron source

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Nuclear Science and Techniques 2024年第8期35卷 58-68页

作者： Qiang li li‑Jiao Wang Jing‑Yu Tang Xiang‑Biao Qiu Zhen Chen Mao‑Yuan Zhao Chang‑Jun Ning Kai Pan Wei Xu Tao li Su‑Peng Lu Han Yi Rui‑Rui Fan Chang‑Qing Feng Rong {3. Xiao‑Yang Sun Qi An Hao‑Fan Bai Jiang‑Bo Bai Jie Bao Ping Cao Qi‑Ping Chen Yong‑Hao Chen Zeng‑Qi Cui An‑Chuan Fan Fan‑Zhen Feng Min‑Hao Gu Chang‑Cai Han Zi‑Jie Han Guo‑Zhu He Yong‑Cheng He Yang Hong Yi‑Wei Hu Han‑Xiong Huang Wei Jiang Zhi‑Jie Jiang Zheng‑Yao Jin ling Kang Bo li Gong li Xiao li Yang li Jie liu Rong liu Shu‑Bin liu Yi‑Na liu Guang‑Yuan Luan Jie Ren Zhi‑Zhou Ren Xi‑Chao Ruan Zhao‑Hui Song Kang Sun Zhi‑Xin Tan Sheng‑Da Tang Jin‑Cheng Wang Peng‑Cheng Wang Zhao‑Hui Wang Zhong‑Wei Wen Xiao‑Guang Wu Xuan Wu Cong Xia Yong‑Ji Yu Guo‑Hui {3. Hang‑Chang {3. lin‑Hao {3. Qi‑Wei {3. Xian‑Peng {3. Yu‑liang {3. Yue {3. Zhi‑Yong {3. Zhi‑Hao Zhou Ke‑Jun Zhu Chong Zou Institute of High Energy physics Chinese Academy of Sciences(CAS)Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China State key laboratory of Particle Detection and electronics Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Dongguan Songshan Lake Future School Dongguan 523808China School of Nuclear Science and Technology University of Science and Technology of ChinaHefei 230027China State key laboratory of Particle Detection and electronics University of Science and Technology of ChinaHefei 230026China North Night Vision Science and Technology(Nanjing)Research Institute Co.Ltd Nanjing 211106China department of Modern physics University of Science and Technology of ChinaHefei 230026China State key laboratory of Nuclear physics and Technology School of PhysicsPeking UniversityBeijing 100871China Institute of Modern physics Fudan UniversityShanghai 200433China key laboratory of Nuclear Data China Institute of Atomic EnergyBeijing 102413China china Academy of Engineering physics Institute of Nuclear Physics and ChemistryMianyang 621900China USTC archaeometry lab University of Science and Technology of ChinaHefei 230026China Northwest Institute of Nuclear Technology Xi’an 710024China University of Chinese Academy of Sciences Beijing 100049China china Shipbuilding Trading Co. LtdBeijing 100044China

Neutron resonance imaging(NRI)has recently emerged as an appealing technique for neutron *** complexity surpasses that of conventional transmission imaging,as it requires a high demand for both a neutron source and ***,the progression of NRI technology has been sluggish since its inception in the 1980s,particularly considering the limited studies analyzing the neutron energy range above *** white neutron source(Back-n)at the china Spallation Neutron Source(CSNS)provides favorable beam conditions for the development of the NRI technique over a wide neutron energy range from eV to ***-sensitive microchannel plates(MCP)have emerged as a cutting-edge tool in the field of neutron detection owing to their high temporal and spatial resolutions,high detection efficiency,and low *** this study,we report the development of a 10B-doped MCP detector,along with its associated {3.,data processing system,and NRI experiments at the *** heavy elements such as gold,silver,tungsten,and indium can be easily identified in the transmission images by their characteristic resonance peaks in the 1–100 eV energy range;the more difficult medium-weight elements such as iron,copper,and aluminum with resonance peaks in the 1–100 keV energy range can also be *** particular,results in the neutron energy range of dozens of keV(Aluminum)are reported here for the first time.

关键词： Neutron resonance imaging 10B doped MCP detector White neutron source Sample nuclide identification

Behaviors of field emitters under pulsed voltages

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Science china(Technological Sciences) 2016年第11期59卷 1777-1784页

作者： YANG Jin zhang gengmin key laboratory for the physics and {3. of {3. and department of electronics Peking University Beijing 100871 China Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China SIP-UCLA Institute for Technology Advancement Suzhou 215123 China

In this paper we described our study of the behaviors of field emitters driven by square-wave voltages. We observed phenomena under pulsed voltages that generally do not manifest themselves under direct-current voltages. We interpreted these phenomena with the cathode and anode combined treated as equivalent to a resistor and a condenser in series connection. First,because of the delay caused by the charging process of the condenser, the waveform of the voltage across the cathode-anode gap was remarkably distorted. Second, the resistor led to considerable attenuation in field emission, which was clearly observable within each pulse and became more dramatic with increasing repetition frequency of the pulses. Furthermore, the field emission currents under direct-current voltages were lower than those under pulsed voltages. This disparity is attributed to rising resistance in the circuit with rising temperature. We also discussed the restrictions that the waveform distortion and current attenuation could impose on potential field emitter applications.

关键词： field emission pulsed voltage charging current attenuation waveform distortion