检索结果-南通市图书馆

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Rare Metals 2006年第4期25卷 359-364页

作者： li shitao qiao xueliang chen jianguo jia fang wu changle State Key Laboratory of Plastic Forming Simulation and Die ＆ Mould Technology Huazhong University of Science and Technology Wuhan 430074China

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

关键词： indium-tin oxide (ITO) photoelectrolytic properties RF-magnetron sputtering IR irradiation temperature microstructure refractive index

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

引用

北京科技大学学报 2006年第8期28卷 743-743页

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.

关键词：铟锡氧化物薄膜微观结构射频磁控管溅射法光电解性能折射率

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

金属基复合透明导电膜的研究

引用

稀有金属 2006年第4期30卷 505-510页

作者：贾芳乔学亮陈建国李世涛邱小林吴长乐华中科技大学模具技术国家重点实验室湖北武汉430074

透明导电薄膜作为一种新型的光电材料显示出多种优异的光电性能和具有广泛的应用背景。综述了金属基复合透明导电膜的发展历程与研究现状,重点讨论了电介质/金属/电介质(D/M/D)和透明导电氧化物/金属/透明导电氧化物(TCO/M/TCO)这两种... 详细信息

透明导电薄膜作为一种新型的光电材料显示出多种优异的光电性能和具有广泛的应用背景。综述了金属基复合透明导电膜的发展历程与研究现状,重点讨论了电介质/金属/电介质(D/M/D)和透明导电氧化物/金属/透明导电氧化物(TCO/M/TCO)这两种类型的多层复合膜,分析了其设计原理和存在问题,并指出了控制金属层的厚度和界面扩散是制备高性能光电薄膜的重要方面,最后介绍了金属基复合膜应用,并对其研究进行了展望。

关键词：薄膜透明导电氧化物电介质金属基复合设计原理

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

引用

工程科学学报 2006年第8期 743-743页

作者： li shitao,qiao xueliang,chen jianguo,jia fang,wu changleState Key Laboratory of Plastic Forming Simulation and Die & Mould Technology,Huazhong University of Science and Technology,wuhan 430074,China

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.

关键词： indium-tin oxide (ITO) photoelectrolytic properties RF-magnetron sputtering IR irradiation temperature microstructure refractive index

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：