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A novel voltage-type sense amplifier for low-power nonvolatile memories

Science china(Information Sciences) 2010年第8期53卷 1676-1681页

作者： li ming , kang jinfeng & wang yangyuan institute of microelectronics, peking university, beijing 100871, china institute of microelectronics Peking University Beijing China

Based on the requirements of the nonvolatile memories embedded in ultra low-power RFID transponders, a novel voltage-type sense amplifier is designed to achieve both the reduced reading power and the improved reliability. Compared to the conventional voltage-type sense amplifier, the additional capacitor and current limiter are introduced in the novel voltage-type sense amplifier to reduce the reading power and to improve the reading reliability. The simulations show that the reading power and reliability of our voltage-type sense amplifier are superior to the previously reported voltage-type sense amplifier without speed loss but with only a little increased area. A testing chip has been fabricated based on 0.18 μm EEPROM technology to verify the design. The novel voltage-type sense amplifier can be implemented to the low-power nonvolatile memory embedded in RFID transponder.

关键词： sense amplifier nonvolatile memory transponder low-power

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A Novel Technique of Silicon-on-Nothing MOSFETs Fabrication by Hydrogen and Helium Co-implantation

A Novel Technique of Silicon-on-Nothing MOSFETs Fabrication ...

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2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Weihai Bu,Ru Huang~*,ming li,Yu Tian,and yangyuan wang institute of microelectronics,peking university,beijing 100871,china

In this paper a novel technique of Silicon-on-Nothing (SON) MOSFETs fabrication by H

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A Low-Voltage Voltage Doubler without Body Effect

A Low-Voltage Voltage Doubler without Body Effect

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： ming li li-Wu Yang jinfeng kang yangyuan wang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

＜正＞A voltage doubler,which avoids body effect and then improves rise time and efficiency even with 1V power supply,is *** art is designed for word line boosting,using 0.18um EEPROM *** only the voltage doubler can work with capacitive load normally,but also it can supply load current and achieve higher *** whole circuit can be implemented on chip and is suitable for low voltage *** addition,theoretical analysis and simulation results have been given.

关键词： [IEEE Keyword]EPROM Equations Mathematical model MOSFETs Threshold voltage Transistors Power supplies

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