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Photochemical oxidation of dimethylsulfide in seawater

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Acta Oceanologica Sinica 2007年第5期26卷 34-42页

作者： YANG guipeng li Chengxuan QI Jialin HU lige HOU Haijun Key Laboratory of Marine Chemistry Theory and Technology of Ministry of Education Ocean University of China Qingdao 266100 China

Dimethylsulfide （DMS） is generally thought to be lost from the surface oceans by evasion into the atmosphere as well as consumption by microbe. However, photochemical process might be important in the removal of DMS in the oceanic photic zone. A kinetic investigation into the photochemical oxidation of DMS in seawater was performed. The photo-oxidation rates of DMS were influenced by various factors including the medium, dissolved oxygen, photosensitizers, and heavy metal ions. The photo-oxidation rates of DMS were higher in seawater than in distilled water, presumably due to the effect of salinity existing in seawater. Three usual photosensitizers （humic acid, fulvic acid and anthroquinone）, especially in the presence of oxygen, were able to enhance the photo-oxidation rate of DMS, with the fastest rate observed with anthroquinone. Photo-oxidation of DMS followed first order reaction kinetics with the rate constant ranging from 2.5 × 10^-5 to 34.3 × 10^-5. Quantitative analysis showed that approximately 32% of the photochemically removed DMS was converted to dimethylsulfoxide. One of the important findings was that the presence of Hg^2 ＋ could markedly accelerate the photo-oxidation rate of DMS in seawater. The mechanism of mercuric catalysis for DMS photolysis was suggested according to the way of CTTM （ charge transfer to metal） of DMS - Hg^2＋ complex.

关键词： dimethylsulfide photochemistry kinetics metal ion seawater

Influence of modulation period for β-Cu2+xSe/SiC nano-multilayer films on their thermoelectric properties

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Progress in Natural Science:Materials International 2022年第5期32卷 586-593页

作者： Guihong Song Yu Chen Hao Du Xiaoyuan Wei guipeng li Yusheng Wu Junhua You Fang Hu School of Materials Science and Technology Shenyang University of Technology Guangzhou Maritime University Institute of Corrosion Science and Technology

In this study, β-Cu2+xSe/SiC nano-multilayer films with different modulation period were successfully deposited on SiO2/Si substrates by sputtering alternately using Cu–Se and SiC targets. The deposited films were observed on both surface and cross-section, and the thermoelectric properties were studied. The results show that both carrier concentration and mobility at room temperature decreased with the reducing modulation period for the nanomultilayer films. The conductivity slightly decreased and Seebeck coefficient greatly increased with the reducing modulation period. As a result of competition, the power factor of the nano multilayer films increased with the reducing modulation period because the positive effect of the Seebeck coefficient exceeded the negative effect of the conductivity. In the case of β-Cu2+xxSe/SiC nano multilayer film with the smallest modulation periods(210 nm), the power factor reached 0.39 mWm-1K-2and 0.59 mWm-1K-2at room temperature and 325°C,respectively. The enhanced power factor for nano multilayer films is attributed to the scattering process at theβ-Cu2+xSe/SiC layer interface, which reduces the carrier concentration and the mobility. It is concluded that the thermoelectric properties of β-Cu2+xSe films can be effectively improved by designing nano multilayer structure.

关键词： Thermoelectric materials β-Cu 2-x Se/SiC multilayer Films Seebeck coefficient Layer interface scattering Modulation period

Advances in computational ChlA-PET data analysis

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Frontiers of Electrical and Electronic Engineering in China 2016年第3期4卷 217-225页

作者： Chao He guipeng li Diekidel M. Nadhir Yang Chen Xiaowo Wang Michael Q. Zhang MOE Key Laboratory of Bioinformatics and Bioinformatics Division TNLIST Center for Synthetic and Systems Biology/ Department of Automation Tsinghua University Beijing 100084 China Departmeni of Biological sciences Cenier for SystemsBio/ogy ihe University of Texas at Dallas Richardson TX 75080-3021 USA

Genome-wide chromatin interaction analysis has become important for understanding 3D topological structure of a genome as well as for linking distal cis-regulatory elements to their target genes. Compared to the Hi-C method, chromatin interaction analysis by paired-end tag sequencing （ChlA-PET） is unique, in that one can interrogate thousands of chromatin interactions （in a genome） mediated by a specific protein of interest at high resolution and reasonable cost. However, because of the noisy nature of the data, efficient analytical tools have become necessary. Here, we review some new computational methods recently developed by us and compare them with other existing methods. Our intention is to help readers to better understand ChlA-PET results and to guide the users on selection of the most appropriate tools for their own projects.

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Tn5-FISH,a novel cytogenetic method to image chromatin interactions with sub-kilobase resolution

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Journal of Genetics and Genomics 2020年第12期47卷 727-734页

作者： Jing Niu Xu Zhang li guipeng Pixi Yan Qing Yan Qionghai Dai Dayong Jin Xiaohua Shen Jichang Wang Michael QZhang Juntao Gao School of Medicine Tsinghua UniversityBeijing 100084China Department of Automation Tsinghua UniversityBeijing 100084China Beijing Institute of Collaborative Innovation Beijing 100094China Medi-X Institute SUSTech Academy for Advanced Interdisciplinary StudiesSouthern University of Science and TechnologyShenzhen 518055China Department of Biology Southern University of Science and TechnologyShenzhen 518055China MOE Key Laboratory of Bioinformatics Bioinformatics DivisionBNRistCenter for Synthetic&Systems BiologyTsinghua UniversityBeijing 100084China Institute for Biomedical Materials and Devices(IBMD) Faculty of ScienceUniversity of Technology SydneyNSW 2007Australia UTS-SUStech Joint Research Centre for Biomedical Materials and Devices Department of Biomedical EngineeringSouthern University of Science and TechnologyShenzhen 518055China Key Laboratory for Stem Cells and Tissue Engineering(Sun Yat-sen University) Ministry of EducationGuangzhou 510080China Department of histology and embryology Zhongshan School of MedicineSun Yat-sen UniversityGuangzhou 510080China Department of Biological Sciences Center for Systems BiologyThe University of TexasDallasTX 75080-3021USA

There is an increasing interest in understanding how three-dimensional(3D)organization of the genome is *** strategies have been employed to identify genome-wide chromatin ***,due to current limitations in resolving genomic contacts,visualization and validation of these genomic loci with sub-kilobase resolution remain unsolved to ***,we describe Tn5 transposase-based Fluorescencein situhybridization(Tn5-FISH),a PCR-based,cost-effective imaging method,which can co-localize the genomic loci with sub-kilobase resolution,dissect genome architecture,and verify chromatin interactions detected by chromatin configuration capture(3C)-derived *** validate this method,short-range interactions in keratin-encoding gene(KRT)locus in topologically associated domain(TAD)were imaged by triple-color Tn5-FISH,indicating that Tn5-FISH is very useful to verify short-range chromatin interactions inside the contact domain and ***,Tn5-FISH can be a powerful molecular tool for the clinical detection of cytogenetic changes in numerous genetic diseases such as cancers.

关键词： Fluorescencein situhybridization Chromatin interaction Cellular imaging Super resolution

层状结构富Mg的Mg_(2)Sn薄膜相组成与热电性能

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稀有金属材料与工程 2022年第5期51卷 1780-1788页

作者：刘莹宋贵宏李贵鹏陈雨胡方沈阳工业大学材料科学与工程学院辽宁沈阳110870

利用高真空磁控溅射设备,通过顺序沉积制备富Mg的Mg_(2)Sn热电薄膜。使用X射线衍射仪(XRD)、扫描电子显微镜(SEM)以及能谱仪(EDS)研究了沉积薄膜的物相组成、表面和截面形貌、元素含量及分布。使用塞贝克(Seebeck)系数/电阻分析系统LSR-... 详细信息

利用高真空磁控溅射设备,通过顺序沉积制备富Mg的Mg_(2)Sn热电薄膜。使用X射线衍射仪(XRD)、扫描电子显微镜(SEM)以及能谱仪(EDS)研究了沉积薄膜的物相组成、表面和截面形貌、元素含量及分布。使用塞贝克(Seebeck)系数/电阻分析系统LSR-3测量了沉积薄膜的电阻率和Seebeck系数,进而研究不同Mg含量的Mg_(2)Sn薄膜的功率因子。结果表明,采用磁控溅射法可以制备出立方反萤石结构的Mg_(2)Sn相薄膜,XRD显示,沉积薄膜是由立方结构的Mg_(2)Sn相和少量的纳米尺寸的金属Mg相组成。随着Mg靶溅射时间的增加,纳米金属Mg相的含量增加,电阻率和Seebeck系数均表现为先升高后降低,这归因于少量纳米金属Mg相与基体相之间存在相界面。适量的金属Mg相存在于Mg_(2)Sn薄膜中,有利于提高Seebeck系数。含有适量纳米尺寸金属Mg相的Mg_(2)Sn沉积膜,因其Seebeck系数较高,电阻率适当,可获得较高的功率因子。层状结构的Mg_(2)Sn薄膜可显著提高Seebeck系数,尽管电阻率也增加,但最终使薄膜的功率因子显著提高。

关键词：热电材料 Mg_(2)Sn薄膜 Seebeck系数层状结构电阻率

溅射沉积富镁Mg_(3)Bi_(2)薄膜的热电性能

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材料研究学报 2021年第11期35卷 835-842页

作者：宋贵宏李秀宇李贵鹏杜昊胡方沈阳工业大学材料科学与工程学院沈阳110870 广东腐蚀科学与技术创新研究院广州510530

采用Mg-Bi化合物靶和金属Mg靶用磁控溅射技术制备富Mg的Mg_(3)Bi_(2)薄膜并表征其相组成、表面和截面形貌,研究了薄膜的热电性能。结果表明,这种富Mg薄膜由Mg_(3)Bi_(2)相和金属Mg相组成且Mg_(3)Bi_(2)结构中有Mg空位,具有p型导电特征,S... 详细信息

采用Mg-Bi化合物靶和金属Mg靶用磁控溅射技术制备富Mg的Mg_(3)Bi_(2)薄膜并表征其相组成、表面和截面形貌,研究了薄膜的热电性能。结果表明,这种富Mg薄膜由Mg_(3)Bi_(2)相和金属Mg相组成且Mg_(3)Bi_(2)结构中有Mg空位,具有p型导电特征,Seebeck系数为正值。随着温度的提高,富Mg薄膜的电阻率先略微提高而后显著降低;随着Mg含量的提高富Mg薄膜的电阻率逐渐提高,但是Mg含量达到一定数值后电阻率又急剧下降。Mg含量较低时Seebeck系数随着温度的提高开始时略下降随后很快增大,达到最大值后又很快降低;Mg含量较高时随着温度的提高Seebeck系数开始时略增大,随后缓慢下降。除了Mg含量较低的样品,在温度相同的条件下随着Mg含量的提高薄膜的Seebeck系数值增大,但是Mg含量过高时Seebeck系数值迅速降低,达到普通金属材料Seebeck系数的数量级。这种富Mg薄膜的功率因子,受Seebeck系数和电阻率制约。

关键词：无机非金属材料热电材料 Mg_(3)Bi_(2)薄膜 Seebeck系数电阻率磁控溅射

Mg_(3)X_(2)(X=Sb,Bi)基热电材料的研究进展

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稀有金属 2022年第12期46卷 1621-1631页

作者：李秀宇宋贵宏李贵鹏刘莹胡方沈阳工业大学材料科学与工程学院辽宁沈阳110870

化石燃料产生的热能一部分以废热的形式流失到环境中。常常,废热的温度较低且低温废热占比很高,有效利用中低温废热将大大提高能源的利用率。热电材料器件能够实现热能与电能相互转换。Zintl相化合物因拥有“电子晶体-声子玻璃”的复杂... 详细信息

化石燃料产生的热能一部分以废热的形式流失到环境中。常常,废热的温度较低且低温废热占比很高,有效利用中低温废热将大大提高能源的利用率。热电材料器件能够实现热能与电能相互转换。Zintl相化合物因拥有“电子晶体-声子玻璃”的复杂晶体结构特征,具有优异的热电性能。Mg_(3)X_(2)(X=Sb,Bi)作为一种Mg基Zintl相化合物,具有成本低、组成元素储量丰富且热电性能优异等特点,被认为是一种极具应用潜力的中低温热电材料。近年来,关于如何提升Mg_(3)X_(2)的热电性能成为研究的热点。首先,综述了Mg_(3)X_(2)晶体结构的特点和其热电性能具有各向异性的特征,又分别综述了掺杂的Mg_(3)Sb_(2)和Mg_(3)Bi_(2)化合物的热电性能和最新研究进展。在相同温度下,n型Mg_(3)X_(2)比p型Mg_(3)X_(2)的热电性能更高。通过不等价n型或p型元素掺杂,大部分Mg_(3)X_(2)基材料虽然Seebeck系数值有所降低,但其电导率、功率因子和优值都增加,可有效改善Mg_(3)X_(2)基材料的热电性能。通过调整Mg_(3)(Sb,Bi)_(2)固溶体中Mg_(3)Bi_(2)的含量,可调整能带电子结构和带隙,在70%含量下(Mg_(3)Bi_(1.4)Sb_(0.6)合金)可获得最大的优值ZT。基于n型Mg_(3)Bi_(1.4)Sb_(0.6)合金在低温废热有效利用率已经超过现有的n型Bi_(2)Te_(3)合金,Mg_(3)X_(2)基很有可能在未来取代n型Bi_(2)Te_(3)合金,成为新的低温热电材料。

关键词：热电材料 Mg_(3)X_(2)(X=Sb Bi) Zintl相 Seebeck系数电导率

溅射沉积掺Ag的SnSe薄膜的微结构和热电性能

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材料研究学报 2020年第8期34卷 561-568页

作者：李贵鹏宋贵宏胡方杜昊尹荔松沈阳工业大学材料科学与工程学院沈阳110870 中国科学院金属研究所材料表面工程研究部沈阳110015 五邑大学智能制造学部江门520920

使用粉末烧结SnSe合金靶高真空磁控溅射制备掺杂Ag的SnSe热电薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等手段分析薄膜的相组成、表面形貌、截面形貌、微区元素含量和元素分布,利用塞贝克系数/电阻分析系统LSR-3测... 详细信息

使用粉末烧结SnSe合金靶高真空磁控溅射制备掺杂Ag的SnSe热电薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等手段分析薄膜的相组成、表面形貌、截面形貌、微区元素含量和元素分布,利用塞贝克系数/电阻分析系统LSR-3测量沉积薄膜的电阻率和Seebeck系数,研究了不同Ag含量SnSe薄膜的热电性能。结果表明,采用溅射技术可制备出正交晶系Pnma结构的SnSe相薄膜,掺杂的Ag在薄膜中生成了纳米Ag3Sn。与未掺杂Ag相比,掺杂Ag的SnSe薄膜其电阻率和Seebeck系数(绝对值,下同)明显减小。并且在一定掺杂范围内,掺杂Ag越多的薄膜电阻率和Seebeck系数越小。未掺杂Ag的SnSe薄膜样品,其Seebeck系数较大但是电阻率也大,因此功率因子较小。Ag掺杂量(原子分数)为7.97%的样品,因其Seebeck系数绝对值较大而电阻率适当,280℃时的功率因子最大(约为0.93 mW·m^-1·K^-2),比未掺杂Ag的样品(PF=0.61 mW·m^-1·K^-2)高52%。掺杂适量的Ag能提高溅射沉积的SnSe薄膜的热电性能(功率因子)。

关键词：材料表面与界面热电材料 SnSe薄膜掺杂Ag Seebeck系数电阻率 Ag3Sn相

溅射沉积Mg2（Sn,Si）薄膜组织结构与导电性能

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金属学报 2019年第11期55卷 1469-1476页

作者：宋贵宏李贵鹏刘倩男杜昊胡方沈阳工业大学材料科学与工程学院沈阳110870 中国科学院金属研究所沈阳110016

采用Mg-Sn-Si-Bi合金和高纯Mg双靶,通过转动基材并调节Mg靶溅射时间,在单晶Si(111)衬底上顺序沉积并获得了Mg含量变化的Mg-Sn-Si-Bi薄膜。结果表明,保持合金靶溅射时间不变,薄膜中Mg的含量随Mg靶溅射时间的延长明显增大,同时薄膜中Sn、S... 详细信息

采用Mg-Sn-Si-Bi合金和高纯Mg双靶,通过转动基材并调节Mg靶溅射时间,在单晶Si(111)衬底上顺序沉积并获得了Mg含量变化的Mg-Sn-Si-Bi薄膜。结果表明,保持合金靶溅射时间不变,薄膜中Mg的含量随Mg靶溅射时间的延长明显增大,同时薄膜中Sn、Si的含量呈减小趋势。薄膜中Mg含量的变化导致其相结构和导电性能发生改变。当Mg含量(原子分数)由71.437%变化到64.497%,薄膜具有单一的立方Mg2(Sn,Si)固溶体相结构;当Mg含量减小到59.813%及以下时,薄膜中Mg2(Sn,Si)固溶体相消失而出现立方Mg2Sn和立方Mg2Si两相;随Mg含量进一步减小到54.006%,薄膜中除Mg2Sn相外还出现了金属Sn相,并且该金属相含量随Mg含量的减少而增大,相应的立方Mg2Sn相含量减少,但Mg2Si相含量几乎没有变化。单一固溶体立方相结构的薄膜具有较大的载流子浓度和迁移率,因此电导率较大。然而,薄膜中金属Sn相的出现导致载流子迁移率显著下降,薄膜导电率也明显降低。

关键词： Mg2(Sn,Si)薄膜 Mg含量电导率迁移率 XPS