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Electronic properties and tunability in graphene/3D-InP mixed-dimensional van der Waals heterostructure

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Frontiers of physics 2023年第2期18卷 225-233页

作者： Qingyun Zhou Yusheng Hou tianshu lai School of Physics State Key Lab.of Optoelectronic Materials and TechnologiesSun Yat-Sen UniversityGuangzhou 510275China

InP solar cell is promising for space application due to its strong space radiation resistance and high power conversion efficient(PCE).Graphene/InP heterostructure solar cell is expected to have a higher PCE because strong near-infrared light can also be absorbed and converted additionally by graphene in this ***,a low PCE was reported experimentally for Graphene/InP *** this paper,electronic properties of graphene/InP heterostructures are calculated using density functional theory to understand the origin of the low PCE and propose possible improving *** calculation results reveal that graphene contact with InP form a p-type Schottky heterostructure with a low Schottky barrier height(SBH).It is the low SBH that leads to the low PCE of graphene/InP heterostructure solar cells.A new heterostructure,graphene/insulating layer/InP solar cells,is proposed to raise SBH and ***,we also find that the opened bandgap of graphene and SBH in graphene/InP heterostructures can be tuned by exerting an electric field,which is useful for photodetector of graphene/InP heterostructures.

关键词： graphene InP(Ⅲ) heterostructure density functional theory

A Simple Time-Resolved Optical Measurement of Diffusion Transport Dynamics of Photoexcited Carriers and Its Demonstration in Intrinsic GaAs Films

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Chinese Physics Letters 2020年第8期37卷 167-171页

作者： Yongyong You Tianran Jiang tianshu lai Affiliations State Key Laboratory of Optoelectronic Materials and Technology Department of PhysicsSun Yat-Sen UniversityGuangzhou 510275China

We develop a tightly focused pump-probe absorption technique to study diffusion dynamics of photoexcited *** has many advantages including the simple setup and operations,higher detection sensitivity,an analytic descriptive model and fast data *** dynamics are measured twice,separately using two different-sized probe spots,instead of many time-delayed diffusion profiles of a carrier pocket measured using spatially probe-spot *** analytic model is derived to describe diffusion *** dynamics in GaAs are measured to demonstrate the feasibility of this *** diffusion coefficient is obtained and agrees well with the reported experimental and theoretical results.

关键词： technique. Diffusion excited

Femtosecond Studies on Third-Order Optical Nonlinearities of Polyanilines

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Chinese Physics Letters 1994年第8期11卷 491-493页

作者： WANG Hui lai tianshu LIN Weizhu MO Dang OUYANG Meng GONG Kecheng Department of Physics Zhongshan UniversityGuangzhou 510275 Department of Polymer South China University of TechnologyGuangzhou 510641

The ultrafast dynamics of third order nonlinearities of polyaniline(PAn)and polyaniline doped in polymethyl mathacrylate(PAn-PMMA)films are investigated using femtosecond absorption *** ultrafast initial exciton deformation time of about 100fs is observed in PAn *** PAn-PMMA film,the third-order nonlinearity results in an efficient two-photon absorption at about 2eV.

关键词： spectroscopy film absorption

Effects of cavity-dispersion noncoaxiality on the generation of ultrabroadband femtosecond pulses

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Chinese Science Bulletin 2008年第5期53卷 659-663页

作者： JIAO ZhongXing LEI Liang HUANG ZhiLing WEN dinHui lai tianshu LIN WeiZhu State Key Laboratory of Optoelectronic Materials and Technologies Department of Physics Sun Yat-sen University Guangzhou 510275 China

The effects of cavity-dispersion noncoaxiality (CDN) on the generation of ultrabroadband femtosecond pulses in KLM Ti:sapphire laser were investigated theoretically and experimentally. It was predicted that when the laser sub-cavity works near the coaxial operation point, the limitation of CDN on the bandwidth broadening is minimum, which is favorable for ultrabroadband pulse generation. On the basis of this prediction, femtosecond pulses with bandwidth of 650 to 1000 nm were directly generated from a home built KLM Ti:sapphire laser. To our knowledge, they are the broadest bandwidth pulses produced from KLM Ti:sapphire laser with similar oscillator configuration and gain crystal length of 3 mm.

关键词：兰宝石激光器空腔散射非同轴性超宽毫微秒脉冲激光技术

Control of the ultrafast photo-electronic dynamics of a chemical-vapor-deposited-grown graphene by ozone oxidation

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Photonics Research 2020年第1期8卷 17-23页

作者： MIN GUO lai-PENG MA WENCAI REN tianshu lai School of Physics State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UniversityGuangzhou 510275China Shenyang National Laboratory for Material Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China

Diverse ultrafast dynamics have been reported on different graphene prepared by different ***-deposited(CVD)growth is regarded as a very promising method for highly efficient production of ***,CVD-grown graphene usually presents only one of the diverse ultrafast ***,control of the ultrafast photo-electronic dynamics of CVD-grown graphene is vital to present diversity for different photodetection applications of CVD-grown *** this paper,we report on the first realization to our knowledge of control of the ultrafast dynamics of CVD-grown graphene and the manifestation of diverse ultrafast dynamics on sole CVD-grown *** study the ultrafast photoelectronic dynamics of CVD-grown graphene with different degrees of oxidation caused by ozone oxidation using femtosecond time-resolved transient differential transmission spectroscopy,and we find that the ultrafast dynamics can evolve obviously with the time of ozone *** diverse ultrafast dynamics reported previously on different monolayer graphenes prepared by different methods are achieved on the sole CVD-grown graphene by controlling oxidation *** mechanism for manipulation of the ultrafast dynamics by ozone oxidation is revealed by Raman spectroscopy as the control of the Fermi level of CVD-grown *** of dynamics based on the optical conductivity model of graphene and Fermi level change well reproduce the observed diverse ultrafast *** results are very important for the diverse applications of graphene and open a new path toward the diverse ultrafast dynamics on sole graphene prepared by any method.

关键词： ozone dynamics electronic

Sub-10-fs pulse generation directly from a KLM Ti: sapphire laser

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Chinese Science Bulletin 2002年第12期47卷 1050-1052页

作者： Weizhu Lin Rui Liao Jinhui Wen Zhigang Liu Li Deng Haichao Zhang tianshu lai Zhongshan Univ Dept Phys State Key Lab Ultrafast Laser Spect Guangzhou 510275 Peoples R China

By reducing the effects of frequency dependent mode size and intracavity gain saturation of a KLM Ti: sapphire laser, the pulse bandwidth broadening is enhanced significantly. 8.5 fs pulses with the bandwidth of 92 nm at wavelength of 710 nm have been generated directly from this laser and measured with an extracavity group velocity dispersion compensation system.

关键词： femtosecond pulses Kerr-lens mode-locking self phase modulation.

稀土元素Tb掺杂对Heusler合金Co_2FeAl_(0.5)Si_(0.5)的磁各向异性和超快磁化动力学影响研究

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中山大学学报（自然科学版） 2015年第6期54卷 67-71页

作者：严逸飞赖天树中山大学光电材料与技术国家重点实验室∥物理科学与工程技术学院广东广州510275

利用飞秒时间分辨泵浦-探测磁光克尔光谱对掺杂不同浓度稀土元素Tb的Heusler合金Co_2FeAl_(0.5)Si_(0.5)(CFAS)磁性薄膜的磁各向异性和超快退磁动力学进行了研究。发现较低浓度Tb掺杂的样品出现磁化进动振荡,而较高浓度Tb的样品无磁化... 详细信息

利用飞秒时间分辨泵浦-探测磁光克尔光谱对掺杂不同浓度稀土元素Tb的Heusler合金Co_2FeAl_(0.5)Si_(0.5)(CFAS)磁性薄膜的磁各向异性和超快退磁动力学进行了研究。发现较低浓度Tb掺杂的样品出现磁化进动振荡,而较高浓度Tb的样品无磁化进动振荡,最高浓度的样品只有一个零点峰,表明不同Tb浓度的样品具有不同的磁各向异性。同时,从无进动磁化动力学曲线上观察到样品的退磁过程都是两步退磁,第一步快的退磁化过程源于过渡金属(Co Fe)的3d磁矩的超快退磁化,而第二步较慢的退磁化反映的是Tb元素的4f磁矩通过3d-5d6s-4f耦合的退磁化过程。结果表明可以通过控制掺杂Tb浓度来达到调控CFAS的磁各向异性目的。这种Tb掺杂的离面磁化的CFAS合金薄膜在自旋电子器件制作中具有巨大应用潜力。

关键词：时间分辨磁光克尔光谱 Heusler合金稀土元素Tb 磁各向异性

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微粒直径的相干测量精度

中国激光 1993年第4期20卷 304-308页

作者：赖天树项志遴中国科学技术大学近代物理系合肥230026

本文采用数字分析方法研究了相干照明下摄像机的空间分辨率、数字滤波和离焦诸因素对微粒直径的测量精度的影响,提出了一种简单的判焦方法。实验结果与理论分析一致。

关键词：相干测量微粒尺寸测量摄像机

非晶N:GeSb薄膜的光致晶化及其相干声子谱表征

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中山大学学报（自然科学版） 2014年第2期53卷 29-32,37页

作者：李忠谕胡益丰文婷翟继卫赖天树中山大学光电材料与技术国家重点实验室∥物理科学与工程技术学院广东广州510275 同济大学功能材料研究所上海200092

利用对微结构变化非常灵敏的相干声子光谱技术研究了非晶N:GeSb薄膜的光致相变特征。发现当激光辐照能流达到某个阈值时,出现了一个新的声子模,表明相变的发生。同时,退火晶化的N:GeSb薄膜也出现此新的声子模,表明激光照射的确导致了薄... 详细信息

利用对微结构变化非常灵敏的相干声子光谱技术研究了非晶N:GeSb薄膜的光致相变特征。发现当激光辐照能流达到某个阈值时,出现了一个新的声子模,表明相变的发生。同时,退火晶化的N:GeSb薄膜也出现此新的声子模,表明激光照射的确导致了薄膜的晶化。相干光学声子谱的抽运能量密度依赖实验结果表明光致晶化的N:GeSb薄膜的相干光学声子的寿命和频率均随抽运能量密度增加而减小,与晶体中的依赖关系一致。结果表明N:GeSb薄膜的光致晶化质量较好,具有相变光存储应用潜力。

关键词：超快光谱光致相变相干声子 N GeSb薄膜抽运-探测