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Large-scale and high-quality Ⅲ-nitride membranes through microcavity-assisted crack propagation by engineering tensile-stressed Ni layers

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Opto-Electronic Science 2022年第10期 45-55页

作者： Jung-Hong Min kwangjae lee Tae-Hoon Chung Jung-Wook Min Kuang-Hui Li Chun Hong Kang Hoe-Min Kwak Tae-Hyeon Kim Youyou Yuan Kyoung-Kook Kim Dong-Seon lee Tien Khee Ng Boon S.Ooi Photonics Laboratory Computer Electrical and Mathematical Sciences and Engineering Division (CEMSE) King Abdullah University of Science and Technology (KAUST) Department of Electrical Engineering Stanford University Light Source Research Division Korea Photonics Technology Institute (KOPTI) School of Electrical Engineering and Computer Science Gwangju Institute of Science and Technology Department of Advanced Convergence Technology Research Institute of Advanced Convergence Technology Korea Polytechnic University King Abdullah University of Science and Technology (KAUST)

Epitaxially grown Ⅲ-nitride alloys are tightly bonded materials with mixed covalent-ionic bonds. This tight bonding presents tremendous challenges in developing Ⅲ-nitride membranes, even though semiconductor membranes can provide numerous advantages by removing thick, inflexible, and costly substrates. Herein, cavities with various sizes were introduced by overgrowing target layers, such as undoped GaN and green LEDs, on nanoporous templates prepared by electrochemical etching of n-type GaN. The large primary interfacial toughness was effectively reduced according to the design of the cavity density, and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers. The resulting Ⅲ-nitride membranes maintained high crystal quality even after exfoliation due to the use of GaN-based nanoporous templates with the same lattice constant. The microcavity-assisted crack propagation process developed for the current Ⅲ-nitride membranes forms a universal process for developing various kinds of largescale and high-quality semiconductor membranes.

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Large-scale and high-quality III-nitride membranes through microcavity-assisted crack propagation by engineering tensile-stressed Ni layers

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Opto-Electronic Science 2022年第10期1卷 51-61,42-50页

作者： Jung-Hong Min kwangjae lee Tae-Hoon Chung Jung-Wook Min Kuang-Hui Li Chun Hong Kang Hoe-Min Kwak Tae-Hyeon Kim Youyou Yuan Kyoung-Kook Kim Dong-Seon lee Tien Khee Ng Boon S.Ooi Photonics Laboratory ComputerElectrical and Mathematical Sciences and Engineering Division(CEMSE)King Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Saudi Arabia Department of Electrical Engineering Stanford UniversityStanfordCA 94305USA Light Source Research Division Korea Photonics Technology Institute(KOPTI)Gwangju 61007Republic of Korea School of Electrical Engineering and Computer Science Gwangju Institute of Science and TechnologyGwangju 61005Republic of Korea Department of Advanced Convergence Technology Research Institute of Advanced Convergence TechnologyKorea Polytechnic University237 Sangidaehak-roSiheung-si 15073Republic of Korea King Abdullah University of Science and Technology(KAUST) Thuwal 23955-6900Saudi Arabia

Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic *** tight bonding presents tremendous challenges in developing III-nitride membranes,even though semiconductor membranes can provide numerous advantages by removing thick,inflexible,and costly ***,cavities with various sizes were introduced by overgrowing target layers,such as undoped GaN and green LEDs,on nanoporous templates prepared by electrochemical etching of n-type *** large primary interfacial toughness was effectively reduced according to the design of the cavity density,and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni *** resulting III-nitride membranes maintained high crystal quality even after exfoliation due to the use of GaN-based nanoporous templates with the same lattice *** microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes.

关键词： III-nitride alloys membranes nanoporous Ni stressor light-emitting diodes ultraviolet photodetectors

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