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Photonic curing of solution-deposited ZrO_(2) dielectric on PEN:a path towards high-throughput processing of oxide electronics

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npj Flexible Electronics 2020年第1期4卷 66-72页

作者： Trey B.Daunis kurt a.schroder Julia W.P.Hsu Department of Materials Science&Engineering University of Texas at DallasRichardsonTXUSA NovaCentrix AustinTXUSA

High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar ***,high-quality oxide films from solution-based precursors typically require 20 min or more of thermal annealing at high temperature(>250℃)for each layer,severely limiting both the throughput and substrate ***,we report high-speed photonic curing of ZrO_(2) dielectric thin films on flexible plastic *** curing and patterning processes can be achieved simultaneously by using shadow mask patterning or adjusting conditions to convert oxide only on top of underlying metal contacts,***-aligned ***-insulator-metal capacitors using two layers of ZrO_(2) films photonically cured in just 100 s per layer show non-dispersive capacitance-frequency behaviour from 10^(2) to 10^(6) Hz,high areal capacitance of 200 nF/cm^(2) and low dissipation factor of 0.03 at 10^(5) Hz,leakage current density of~10^(−7) A/cm^(2) at an applied field of 2 MV/cm,and a breakdown field of nearly 8 MV/*** an upgraded tool,similar dielectric properties are achieved in as short as 100 ms using a single pulse of light,revealing a pathway to oxide film processing beyond 30 m/min.

关键词： dielectric capacitance curing

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Large-area photonic lift-off process for flexible thin-film transistors

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npj Flexible Electronics 2022年第1期6卷 115-124页

作者： Adam M.Weidling Vikram STurkani Vahid Akhavan kurt a.schroder Sarah L.Swisher Department of Electrical and Computer Engineering University of Minnesota Twin Cities4-174 Keller Hall200 Union Street S.E.MinneapolisMN 55455USA NovaCentrix 400 Parker DriveSuite 1110AustinTX 78728USA

Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer *** mitigate,glass carriers are used during fabrication,but removing the plastic substrate from a carrier without damaging the electronics remains *** we utilize a large-area,high-throughput photonic lift-off(PLO)process to rapidly separate polymer films from rigid *** uses a 150µs pulse of broadband light from flashlamps to lift-off functional thin films from glass carrier substrates coated with a light absorber layer(LAL).Modeling indicates that the polymer/LAL interface reaches above 800℃ during PLO,but the top surface of the PI remains below 120℃.An array of indium zinc oxide(IZO)thin-film transistors(TFTs)was fabricated on a polyimide substrate and photonically lifted off from the glass *** TFT mobility was unchanged by *** flexible TFTs were mechanically robust,with no reduction in mobility while flexed.

关键词： film process absorber

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