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Effect of Partially Substituting Ca with Mischmetal on the Microstructure and Mechanical Properties of Extruded Mg-Al-Ca-Mn-Based Alloys

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Acta Metallurgica Sinica(English Letters) 2019年第2期32卷 205-217页

作者： Chao Xu Taiki Nakata Guo-Hua Fan kosuke yamanaka Guang-Ze Tang Lin Geng Shigeharu Kamado School of Materials Science and Engineering Harbin Institute of Technology Department of Mechanical Engineering Nagaoka University of Technology

Mg-2Al-1.2Ca-0.2Mn(at%)-based alloys with Ce-rich mischmetal(MM) substitution of 0–0.6 at% for Ca were hot extruded at 400 °C. The effect of MM substitution on the microstructure and mechanical properties of the extruded alloys was investigated. The as-cast Mg-2Al-1.2Ca-0.2Mn alloy is mainly composed of a-Mg, Mg_2Ca and(Mg,Al)_2Ca phases and Al_8Mn_5 precipitates, whereas the substitution of MM brings about the formation of Al_(11)MM_3, Al_2MM phases and Al_(10)MM_2Mn_7 particles with the absence of (Mg,Al)_2Ca phase. The volume fraction of MM-containing phases increases with increasing MM contents. All of the extruded alloys exhibit bimodal microstructure comprising fine dynamically recrystallized grains with almost random orientation and coarse deformed grains with strong basal texture. Dense nanosized planar Al_2Ca and spherical Al–Mn phases precipitate inside the deformed grains. High tensile yield strengths of~ 350 MPa and moderate elongations to failure of >12% are obtained in all extruded alloys; the MM substitution induces negligible difference in the tensile properties at ambient temperature, while the highest MM substitution improves the strength at 180 °C due to the better thermal stability of the fragmented MM-containing phases.

关键词： Magnesium alloys Extrusion Microstructures Precipitation Mechanical properties

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STEM MoiréObservation of Lattice-Relaxed Germanium Grown on Silicon

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Journal of Materials Science and Chemical Engineering 2017年第1期5卷 102-108页

作者： Junji yamanaka Chiaya Yamamoto Hiroki Nakaie Tetsuji Arai Keisuke Arimoto kosuke O. Hara Kiyokazu Nakagawa Center for Crystal Science and Technology University of Yamanashi Kofu Japan Center for Creative Technology University of Yamanashi Kofu Japan Center for Instrumental Analysis University of Yamanashi Kofu Japan

We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.

关键词： STEM Moiré Lattice Strain Ge on Si Plasma Heating

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Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface

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Journal of Materials Science and Chemical Engineering 2018年第1期6卷 25-31页

作者： Junji yamanaka Mai Shirakura Chiaya Yamamoto Naoto Utsuyama Kei Sato Takane Yamada kosuke O. Hara Keisuke Arimoto Kiyokazu Nakagawa Center for Instrumental Analysis University of Yamanashi Kofu Japan Center for Creative Technology University of Yamanashi Kofu Japan Center for Crystal Science and Technology University of Yamanashi Kofu Japan

Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.

关键词： Strained Si SiGe(110) Stress-Induced Twin Transmission Electron Microscopy

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Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré

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Journal of Materials Science and Chemical Engineering 2018年第7期6卷 8-15页

作者： Junji yamanaka Mai Shirakura Chiaya Yamamoto Kei Sato Takane Yamada kosuke O. Hara Keisuke Arimoto Kiyokazu Nakagawa Akimitsu Ishizuka Kazuo Ishizuka University of Yamanashi Takeda Kofu Japan HREM Research Inc. Matsukazedai Higashimastuyama Japan

A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.

关键词： STEM Moiré SiGe Scanning Transmission Electron Microscopy

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