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Twin boundary dominated electric field distribution in CdZnTe detectors

Chinese physics B 2018年第11期27卷 316-320页

作者：董江鹏介万奇余竞一郭榕榕 Christian Teichert kevin-p gradwohl 张滨滨罗翔祥席守智徐亚东 State Key Laboratory of Solidification processing Northwestern Polytechnical University Xi'an 710072 China Key Laboratory of Radiation Detection Materials and Devices Northwestern Polytechnical University Xi'an 710072 China School of Optoeletronic and Communication Engineering Xiamen University of Technology Xiamen 361024 China Institute of physics Montanuniversitaet Leoben. Leoben 8700. Austria

The performance of CdZnTe X/γ-ray detectors is strongly affected by the electric field distribution in terms of charge transport and charge collection. Factors which determine the electric field distribution are not only electric contact, but also intrinsic defects, especially grown-in twin boundaries. Here, the electric field distribution around twin boundaries is investigated in a CdZnTe bicrystal detector with a {111}–{111} twin plane using the pockels electro-optic effect. The results of laser beam induced current pulses are also obtained by the transient current technique, and we discuss the influence of the twin boundary on the electric field evolution. These studies reveal a significant distortion of the electric field, which is attributed to the buildup of space charges at twin boundaries. Also, the position of these space charge regions depends on the polarity of the detector bias. An energy band model based on the formation of an n–n＋–n junction across the twin boundary has been established to explain the observed results.

关键词： electric field distribution CdZnTe twin boundary pockels effect

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Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy

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photonics Research 2019年第5期7卷 518-525页

作者： Jiangpeng Dong kevin-p. gradwohl Yadong Xu Tao Wang Binbin Zhang Bao Xiao Christian Teichert Wanqi Jie State Key Laboratory of Solidification processing Ministry of Industry and Information Technology (MIIT) Key Laboratory of Radiation Detection Materials and Devices School of Materials and Engineering Northwestern Polytechnical University Xi'an 710072 China Institute of physics Montanuniversitaet Leoben Leoben 8700 Austria

In this work, a model based on the optical rectification effect and the photocurrent surge effect is proposed to describe the terahertz emission mechanism of the layered GaTe crystal. As a centrosymmetric crystal, the optical rectification effect arises from the breaking of the inversion symmetry due to lattice reorganization of the crystal’s surface layer. In addition, the photocurrent surge originating from the unidirectional charge carrier diffusion-due to the noncubic mobility anisotropy within the layers-produces terahertz radiation. This is confirmed by both terahertz emission spectroscopy and electric property characterization. The current surge perpendicular to the layers also makes an important contribution to the terahertz radiation, which is consistent with its incident angle dependence. Based on our results, we infer that the contribution of optical rectification changes from 90%under normal incidence to 23% under a 40° incidence angle. The results not only demonstrate the terahertz radiation properties of layered GaTe bulk crystals, but also promise the potential application of terahertz emission spectroscopy for characterizing the surface properties of layered materials.

关键词： GaTe crystal surface lattice reorganization in-plane noncubic mobility

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