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Science China(Physics,Mechanics & Astronomy) 2021年第6期64卷 106-113页

作者： XiongHua Liu YongCheng Deng XiuKai Lan RunZe Li kaiyou wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China

Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin ***,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently *** this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure *** found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida *** finding opens a new route for understanding and using the AFM interfacial spins in spintronics.

关键词： spintronics antiferromagnetic interfacial spins spin-orbit torque oscillation

Electrically function-switchable magnetic domain-wall memory

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National Science Review 2023年第10期10卷 72-78页

作者： Yu Sheng Weiyang wang Yongcheng Deng Yang Ji Houzhi Zheng kaiyou wang State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

Versatile memory is strongly desired for end users,to protect their information in the information *** particular,bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered ***,no such switchable memory has been *** demonstrate that the rewritable function can be converted into read-only function by applying a sufficiently large current pulse in a U-shaped domain-wall memory,which comprises an asymmetric Pt/Co/Ru/AlOxheterostructure with strong D zyaloshinskii-Moriya ***-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2substrate are ***,we confirm that the information can be stored in rewritable or read-only states at bit level according to the security needs of end *** work not only provides a solution for personal confidential data,but also paves the way for developing multifunctional spintronic devices.

关键词： spintronics spin orbit torques magnetic domain-wall SOT-MRAM information security

RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers

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Chinese Physics B 2021年第2期30卷 584-588页

作者： Runze Li Yucai Li Yu Sheng kaiyou wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China

We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin *** of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic *** magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer *** to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of *** amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be *** study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.

关键词： perpendicular magnetic anisotropy RF magnetron sputtering ion irradiation spin orbit torque

Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices

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Science China(Physics,Mechanics & Astronomy) 2014年第8期57卷 1471-1475页

作者： CAO YuFei LI YanYong LI YuanYuan WEI GuanNan JI Yang wang kaiyou The State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences

We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/A1GaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying the out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the A1GaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device.

关键词： magnetic coupling magnetoresistance bilayer structure annealing anisotropic field

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

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National Science Review 2023年第2期10卷 123-130页

作者： Yongcheng Deng Xionghua Liu Yiyuan Chen Zongzheng Du Nai Jiang Chao Shen Enze Zhang Houzhi Zheng Hai-Zhou Lu kaiyou wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology (SUSTech) International Quantum Academy Beijing Academy of Quantum Information Sciences Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences

Non-collinear antiferromagnetic Weyl semimetals,combining the advantages of a zero stray field and ultrafast spin dynamics,as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions,have attracted extensive ***,the all-electrical control of such systems at room temperature,a crucial step toward practical application,has not been ***,using a small writing current density of around 5 × 10～6 A·cm-2,we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn,with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOxstructure,and without external magnetic field or injected spin *** simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn *** findings pave the way for the development of topological antiferromagnetic spintronics.

关键词： spintronics non-collinear antiferromagnetic Weyl semimetals all-electrical switching spin-orbit torques

Spin logic operations based on magnetization switching by asymmetric spin current

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Science China(Information Sciences) 2022年第2期65卷 181-187页

作者： Yucai LI Nan ZHANG kaiyou wang State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing Academy of Quantum Information Sciences

Spintronic devices based on spin orbit torques(SOT) exhibit advantages in low power consumption, high speed, reconfigurability, and high endurance, which offers the prospect of in-memory computing based on spin logic devices. By designing a local spin current gradient, the magnetization can be switched deterministically by asymmetric spin currents without external magnetic field using micromagnetic simulations, where an additional out of plane effective field can be generated by the spin gradient. Through capping half of the Pt/Co/Pt SOT devices with Pt strip, we demonstrate the field-free deterministic currentinduced magnetization switching experimentally. Finally, we design AND, NAND, OR, and NOR Boolean logic gates based on these devices, which could be used as building blocks for programmable and stateful logic operations.

关键词： spin orbit torque spin currents spin current gradient magnetization switching spin logic

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

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Chinese Physics B 2022年第11期31卷 143-148页

作者： Weihao Li Xiukai Lan Xionghua Liu Enze Zhang Yongcheng Deng kaiyou wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 China Beijing Academy of Quantum Information Sciences Beijing 100083 China Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049 China

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic *** this work,we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin–orbit toque can be tuned into a multistate one as decreasing the domain nucleation ***,the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic ***,we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation *** work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.

关键词： switching plasticity compensated ferrimagnet spin-orbit torque spike timing-dependent plasticity sigmoidal neuron handwritten digits recognition neuromorphic computing

The effect of Bi composition on the electrical properties of InP1-xBix

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Science China(Physics,Mechanics & Astronomy) 2017年第4期60卷 82-85页

作者： GuanNan Wei Xing Dai Qi Feng WenGang Luo YiYang Li Kai wang LiYao Zhang WenWu Pan ShuMin wang ShenYuan Yang kaiyou wang State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory of Functional Materials for lnformatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.

关键词： In Bi Ta The effect of Bi composition on the electrical properties of InP x)Bi_x

Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

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Chinese Physics Letters 2022年第12期39卷 99-103页

作者： Wenkai Zhu Shihong Xie Hailong Lin Gaojie Zhang Hao Wu Tiangui Hu Ziao wang Xiaomin Zhang Jiahan Xu Yujing wang Yuanhui Zheng Faguang Yan Jing Zhang Lixia Zhao Amalia Patanè Jia Zhang Haixin Chang kaiyou wang State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Physics and Astronomy University of NottinghamNottingham NG72RDUnited Kingdom Center for Joining and Electronic Packaging State Key Laboratory of Material Processing and Die&Mold TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China Wuhan National High Magnetic Field Center Huazhong University of Science and TechnologyWuhan 430074China School of Electrical and Electronic Engineering Tiangong UniversityTianjin 300387China School of Physics Huazhong University of Science and TechnologyWuhan 430074China

A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic *** particular,MTJs based on twodimensional van der Waals(vd W)heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic ***,their operation at room temperature remains a ***,we report a large tunnel magnetoresistance(TMR)of up to 85%at room temperature(T=300 K)in vdW MTJs based on a thin(<10 nm)semiconductor spacer WSe_(2)layer embedded between two Fe_(3)GaTe_(2e)lectrodes with intrinsic above-room-temperature *** TMR in the MTJ increases with decreasing temperature up to 164%at T=10 *** demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.

关键词： resistance spacer tunnel

Polarization-sensitive and wide-spectrum photovoltaic detector based on quasi-1D ZrGeTe_(4)nanoribbon

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InfoMat 2022年第3期4卷 109-120页

作者： Ruixue Bai Tao Xiong Jinshu Zhou Yue-Yang Liu Wanfu Shen Chunguang Hu Faguang Yan kaiyou wang Dahai Wei Jingbo Li Juehan Yang Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijingChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina College of Electronic Information and Optical Engineering Nankai UniversityTianjinChina State Key Laboratory of Precision Measuring Technology and Instruments Tianjin UniversityTianjinChina Institute of Semiconductors South China Normal UniversityGuangzhouChina Guangdong Provincial Key Laboratory of Chip and Integration Technology GuangzhouChina

Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)***,the narrow bandgap can cause noise owing to the high dark current in *** article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization *** photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)*** from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device ***,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 *** exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive *** work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection.

关键词： linear polarization photodetector photovoltaic ZrGeTe_(4)nanoribbon