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Highly efficient stacked organic light-emitting devices employing a novel intermediate layer

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Science China(Technological Sciences) 2009年第1期52卷 95-98页

作者： NIU LianBin GUAN YunXia REN Yue kong chunyang MA Yan LIANG YiPing Key Laboratory of Optical Engineering College of Physics and Information TechnologyChongqing Normal UniversityChongqing 400047China

Highly efficient stacked organic light-emitting devices (OLEDs) have been fabricated using Mg:Alq3:BCP/ WO3 as a novel intermediate layer, which connects two identical emissive units. The stacked OLEDs consisting of NPB/Alq3 exhibited high current efficiency and brightness characteristics over conven- tional single-unit device. At 200 mA/cm2, the current efficiency of the stacked OLEDs using the inter- mediate layers of Mg:Alq3:BCP/WO3 were about 6.85 cd/A, doubling that of the conventional device. The results may prove the method to be effective to enhance the current efficiency and brightness of OLEDs.

关键词： organic light-emitting devices Mg:Alq3:BCP/WO3 stacked

Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets

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Journal of Wuhan University of Technology(Materials Science) 2017年第4期32卷 866-870页

作者：彭丽萍 FANG Liang ZHAO Yan WU Weidong RUAN Haibo kong chunyang Science and Technology on Plasma Physics Laboratory Research Center of Laser Fusion CAEP Mianyang 621900 China Department of Applied Physics Chongqing University Chongqing 400030 China Department of Applied physics Chongqing Normal University Chongqing 400047 China

Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.

关键词： RF magnetron sputtering optical properties indium-doped ZnO semiconducting Ⅱ-Ⅵ materials

Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga_(2)O_(3) films for solar-blind imaging

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Science China(Technological Sciences) 2023年第9期66卷 2707-2715页

作者： ZHENG QiQi CHEN LingRui LI XuDong DING Ke PANG Di LI HongLin XIONG YuanQiang RUAN HaiBo FANG Liang LI WanJun YE LiJuan ZHANG Hong kong chunyang Chongqing Key Laboratory of Photo-Electric Functional Materials College of Physics and Electronic EngineeringChongqing Normal UniversityChongqing 401331China Research Center for Materials Interdisciplinary Sciences Chongqing University of Arts and SciencesChongqing 402160China College of Physics Chongqing UniversityChongqing 401331China

Solar-blind imaging has attracted considerable interest in both military and civilian applications,spurring the development of high-performance deep-ultraviolet photodetector arrays(PDAs) with wide-bandgap semiconductor ***,we present a novel method to enhance the performance of solar-blind PDAs(SBPDs) using β-Ga_(2)O_(3) films obtained by the phase transition of heterogeneous epitaxial sub-stable ε-Ga_(2)O_(3),achieved through high-temperature rapid ***-semiconductor-metaltype SBPDs based on phase-transformed β-Ga_(2)O_(3) films exhibited superior performance,including an ultrahigh responsivity of 459.38 A/W,detectivity of 10^(14)–10^(15) Jones,external quantum efficiency of 10^(4)%–10^(5)%,rejection ratio(R_(254)/R_(365)) of 10^(5)–10^(6),photo-to-dark current ratio of 10^(4)–10^(6),fast response speed of 1.01 s/0.06 s,and favorable ***,the ultrahigh responsivity of β-Ga_(2)O_(3)-film-based devices was approximately 222-fold higher than that of ε-Ga_(2)O_(3) film-based *** assembled 4×5 β-Ga_(2)O_(3) film-based PDAs exhibited favorable uniformity,repeatability,and high spatial resolution for solarblind *** study offers a promising approach for the development of high-performance β-Ga_(2)O_(3)-based PDAs for solarblind ultraviolet imaging with potential applications in both military and civilian fields.

关键词： Ga_(2)O_(3) phase transition photodetector arrays high-performance solar-blind imaging

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Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

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Rare Metals 2007年第3期26卷 247-253页

作者： LI Li FANG Liang CHEN Ximing LIU Gaobin LIU Jun YANG Fengfan FU Guangzong kong chunyang College of Photoelectric Engineering Chongqing University of Posts and Telecommunications Chongqing 400065 China Department of Applied Physics Chongqing University Chongqing 400044 China Department of Physics Chongqing Normal University Chongqing 400047 China

Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

关键词： AZO thin films structure optical and electrical properties annealing transmittance spectra electrical resistivity

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月球探测器VTVL避障轨迹快速凸优化

航天控制 2020年第5期38卷 10-16页

作者：王俊赵党军孔春阳中南大学航空航天学院长沙410083

针对月球探测器在有月面地形障碍时的垂直起飞-垂直降落(Vertical Takc-off Vertical Landing,VTVL)飞行轨迹优化问题,基于凸优化方法提出一种避障轨迹优化算法。首先考虑没有地形障碍约束时的VTVL轨迹优化问题,利用无损凸化技术将其转... 详细信息

针对月球探测器在有月面地形障碍时的垂直起飞-垂直降落(Vertical Takc-off Vertical Landing,VTVL)飞行轨迹优化问题,基于凸优化方法提出一种避障轨迹优化算法。首先考虑没有地形障碍约束时的VTVL轨迹优化问题,利用无损凸化技术将其转化为凸优化问题,快速求解获得初始轨迹,在此基础上,利用凸的椭球面将地形障碍转化为避障约束,并基于初始轨迹对该约束进行线性化处理,形成序列凸优化问题进行求解。数值计算结果表明,本文所提方法能快速高效求解具有地形障碍约束的VTVL避障轨迹优化问题。

关键词：凸优化避障月球探测器快速轨迹优化

Zn_(1-x)Mg_xO薄膜及其p型掺杂的研究进展

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材料导报 2011年第17期25卷 28-32,41页

作者：黄桂娟孔春阳秦国平重庆师范大学物理与电子工程学院重庆400030

Zn1-xMgxO薄膜作为一种新型的宽带隙半导体材料,近年来一直受到广泛的关注。获得高质量稳定的p型Zn1-xMgxO薄膜是实现其光电应用的关键。概述了Zn1-xMgxO薄膜及其p型掺杂的研究现状,介绍了Zn1-xMgxO薄膜结构、光电性质及在光电领域的应... 详细信息

Zn1-xMgxO薄膜作为一种新型的宽带隙半导体材料,近年来一直受到广泛的关注。获得高质量稳定的p型Zn1-xMgxO薄膜是实现其光电应用的关键。概述了Zn1-xMgxO薄膜及其p型掺杂的研究现状,介绍了Zn1-xMgxO薄膜结构、光电性质及在光电领域的应用,并提出了有待进一步研究的问题。

关键词： Zn1-xMgxO薄膜宽禁带半导体材料 p型掺杂

Ni_(46)Mn_(35)Ga_(19)单晶大的磁熵变和磁控形状记忆效应(英文)

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稀有金属材料与工程 2010年第2期39卷 189-193页

作者：崔玉亭游素琴武亮马勇孔春阳杨晓红潘复生重庆师范大学重庆400047 重庆大学重庆400044

采用多种测量手段,对制备出的转变温度在室温以上的Ni46Mn35Ga19单晶的物性进行表征。电阻和交流磁化率结果表明,该材料的磁转变和马氏体相变是同时发生的。定温磁化强度测量得出材料磁熵变的增长速率高达9.0J/kg·K·T,在1274kA/m(1.6T... 详细信息

采用多种测量手段,对制备出的转变温度在室温以上的Ni46Mn35Ga19单晶的物性进行表征。电阻和交流磁化率结果表明,该材料的磁转变和马氏体相变是同时发生的。定温磁化强度测量得出材料磁熵变的增长速率高达9.0J/kg·K·T,在1274kA/m(1.6T)的磁场下,磁熵变达13.8J/kg·K。此外,应变测量表明,伴随该磁熵变,材料展现出应变量分别高达–0.89%和–1.90%的自发和磁控双向形状记忆效应。

关键词：形状记忆效应磁熵变磁转变马氏体相变

Ni53.2Mn22.6Ga24.2单晶的磁控形状记忆效应和磁控超弹性特性

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金属学报 2009年第3期45卷 351-355页

作者：游素琴崔玉亭武亮孔春阳马勇杨晓红潘复生重庆师范大学物理与信息技术学院重庆400047 重庆大学材料科学与工程学院重庆400044

证实了Ni_(53.2)Mn_(22.6)Ga_(24.2)单晶发生的两步马氏体相变行为是完全热弹性的.在磁场作用下,该材料的马氏体相变和中间马氏体相变展现出相同的应变特征,且具有磁控双向形状记忆效应.磁场下应力-应变特性的测量结果表明,磁场不但对... 详细信息

证实了Ni_(53.2)Mn_(22.6)Ga_(24.2)单晶发生的两步马氏体相变行为是完全热弹性的.在磁场作用下,该材料的马氏体相变和中间马氏体相变展现出相同的应变特征,且具有磁控双向形状记忆效应.磁场下应力-应变特性的测量结果表明,磁场不但对压应力诱发马氏体相变过程中变体重取向所需应力的大小有影响,而且使原来不可逆的形变成为可逆,这种磁控超弹性特性预示了该合金用作磁控超弹性元器件材料的可能性.

关键词： Ni-Mn-Ga合金马氏体相变形状记忆效应超弹性

抗白细胞介素-17抗体治疗斑块状银屑病的系统评价

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南方医科大学学报 2017年第9期37卷 1274-1279页

作者：范小冬向霞张春燕孔文强周春阳杜彪川北医学院药学院四川南充637000 重庆三峡中心医院新生儿科重庆404000 西南医科大学药学院四川泸州646000 重庆三峡中心医院药学部重庆404000

目的系统评价抗白细胞介素-17(IL-17)抗体治疗斑块状银屑病的疗效与安全性。方法计算机检索PubMed、Cochrane Library、EBSCO、EMbase、中国生物医学文献数据库(CBM)、中国知网(CNKI)、维普数据库(VIP)及万方数据库中关于抗IL-17抗体(Se... 详细信息

目的系统评价抗白细胞介素-17(IL-17)抗体治疗斑块状银屑病的疗效与安全性。方法计算机检索PubMed、Cochrane Library、EBSCO、EMbase、中国生物医学文献数据库(CBM)、中国知网(CNKI)、维普数据库(VIP)及万方数据库中关于抗IL-17抗体(Secukinumab、Brodalumab、Ixekizumab)治疗斑块状银屑病的随机对照试验(RCT),检索时限从2000年1月~2017年3月。根据纳入与排除标准筛选文献、提取有效数据并对最终纳入的RCT进行质量评价,采用Cochrane协作网推荐的RevMan5.0软件对各效应指标进行Meta分析。结果共纳入13项RCT,合计11203例患者。Meta分析结果显示,抗IL-17抗体在PASI75和sPGA疗效指标上均优于安慰剂组和阳性药物组(Etanercep、Ustekinumab),差异有统计学意义(P0.05)。结论抗IL-17抗体治疗斑块状银屑病疗效肯定,安全性较好。

关键词：抗IL-17抗体 Secukinumab Brodalumab Ixekizumab 斑块状银屑病 Meta分析