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Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT

Rare Metals 2003年第1期22卷 69-74页

作者： MENGXiangti WANGRuipian kangaiguo WANGJilin JIAHongyong CHENPe InstituteofMicroelectronics TsinghuaUniversityBeijing100084China InstituteofNuclearEnergyTechnology TsinghuaUniversityBeijing100084China

The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe HBT.The higher the neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.

关键词： semiconductor technology SiGe HBT neutron irradiation Si BJT electrical performance

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Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors

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Rare Metals 2004年第2期23卷 165-170页

作者： MENGXiangti kangaiguo ZHANGXimin LIJihong HUANGQiang LIFengmei LIUXiaoguang ZHOUHongyu InstituteofNuclearEnergyTechnology TsinghuaUniversityBeijing100084China InstituteofLowEnergyNuclearPhysics BeijingNormalUniversityBeijing100875China

Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.

关键词： semiconductor technology irradiation damage electron and gamma irradiation color CMOS image sensor output characteristic Si

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