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Special issue on the 100^(th) anniversary of Xiamen University

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Light(Science & Applications) 2021年第10期10卷 1812-1813页

作者： junyong kang Minghui Hong Zhongqun Tian Engineering Research Center of Micro-nano Optoelectronic Materials and Devices Ministry of EducationFujian Key Laboratory of Semiconductor Materials and ApplicationsCI center for OSEDCollege of Physical Science and Technology361005 XiamenChina Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3117576 SingaporeSingapore State Key Laboratory of Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy MaterialsCollege of Chemistry and Chemical EngineeringXiamen University361005 XiamenChina

This special issue is devoted to the celebration of the century anniversary of Xiamen University(XMU)(6 April 2021)and the establishment of the LSA Editorial Office in Xiamen(3 July 2021),a collection to highlight the recent exciting research works performed in XMU or by XMU alumni,from all aspects of optics and photonics,including basic,applied and engineering research and *** guest editors are three XMU alumni who are active researchers in these areas:Professor Minghui Hong from National University of Singapore,Professor Zhongqun Tian and Professor junyong kang from XMU.

关键词： Xiamen anniversary devoted

DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY

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Chinese Physics Letters 1990年第3期7卷 129-132页

作者： ZHANG Wenqing HUANG Qisheng kang junyong Department of Physics Xiamen UniversityXiamen 361005

Deep donor levels in Te-doped GaAs_(1-x)P_(x) for a large range of compositions have been studied by deep level transient spectroscopy(DLTS).Three kinds of deep levels A,B,and C were *** level A appears in all the samples;it is considered that level A is originated from DX *** any regularity of presentation for levels B and C was able to *** properties are probably more complicated.

关键词： originated regularity donor

IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1_(x)Ga_(1-x)As

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Chinese Physics Letters 1990年第9期7卷 421-424页

作者： kang junyong HUANG Qisheng LIN Hong CHEN Chao Department of Physics Xiamen UniversityXiamen 361005

A bound-exciton and a donor-acceptor(D-A)pair emission in photoluminescence are identified for Te-doped A1_(x)Ga_(1-x)*** D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transition and the donor binding energy is determined as a function of composition x up to *** the deep DX level,a new shallower deep state is found in deep level transient spectra under light illumination and is associated with Te-related donor state in PL.

关键词： donor acceptor illumination

Reversing abnormal hole localization in high-Alcontent AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

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Light(Science & Applications) 2020年第1期9卷 1001-1008页

作者： Li Chen Wei Lin Huiqiong Wang Jinchai Li junyong kang Engineering Research Center of Micro-nano Optoelectronic Materials and Devices Ministry of Education/Fujian Provincial Key Laboratory of Semiconductor Materials and Applications/Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices/Department of PhysicsXiamen University361005 XiamenChina Present address:Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences315201 NingboZhejiangChina

AlGaN has attracted considerable interest for ultraviolet(UV)*** the development of UV optoelectronic devices,abnormal carrier confinement behaviour has been observed for c-plane-oriented AlGaN quantum wells(QWs)with high Al *** of the dispersive crystal field split-off hole band(CH band)composed of pz orbitals,the abnormal confinement becomes the limiting factor for efficient UV light *** observation differs from the widely accepted concept that confinement of carriers at the lowest quantum level is more pronounced than that at higher quantum levels,which has been an established conclusion for conventional continuous potential *** particular,orientational pz orbitals are sensitive to the confinement direction in line with the conducting direction,which affects the orbital *** this work,models of Al_(0.75)Ga_(0.25)N/AlN QWs constructed with variable lattice orientations were used to investigate the orbital intercoupling among atoms between the well and barrier *** engineering of QWs was implemented by changing the orbital state confinement,with the well plane inclined from 0°to 90°at a step of 30°(referred to the c plane).The barrier potential and transition rate at the band edge were enhanced through this orbital *** concept of orbital engineering was also demonstrated through the construction of inclined QW planes on semi-and nonpolar planes implemented in microrods with pyramid-shaped *** higher emission intensity from the QWs on the nonpolar plane compared with those on the polar plane was confirmed via localized cathodoluminescence(CL)maps.

关键词： AlGaN quantum ultraviolet

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全氧化镓薄膜同质p-n结

Science China Materials 2024年第3期67卷 898-905页

作者：翟泓超刘晨星吴征远马聪聪田朋飞万景康俊勇褚君浩方志来 Academy for Engineering and Technology and School of Information Science and TechnologyFudan UniversityShanghai 200433China Institute of Optoelectronics Fudan UniversityShanghai 200433China Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices Department of PhysicsXiamen UniversityXiamen 361005China

制备p-n结以及探索其物理机制在发展各种功能器件和推进其实际应用中起到关键作用.超宽禁带半导体在制备高压高频器件上有着巨大的潜力,但是氧化镓p型掺杂困难限制了氧化镓同质p-n结的制备,进而阻碍了全氧化镓基双极型器件的发展.本文... 详细信息

制备p-n结以及探索其物理机制在发展各种功能器件和推进其实际应用中起到关键作用.超宽禁带半导体在制备高压高频器件上有着巨大的潜力,但是氧化镓p型掺杂困难限制了氧化镓同质p-n结的制备,进而阻碍了全氧化镓基双极型器件的发展.本文通过一种先进的相转变生长技术结合溅射镀膜的方法,成功制备了n型锡掺杂β相氧化镓/p型氮掺杂β相氧化镓薄膜.本工作成功制作了全氧化镓单边突变同质p-n结二极管,并且详细分析了器件机理.该二极管实现了4×10^(4)的整流比、在40 V下9.18 mΩcm^(2)的低导通电阻、4.41 V的内建电势和1.78的理想因子,并在交流电压下表现出没有过冲的整流特性以及长期稳定性.本工作为氧化镓同质p-n结初窥门径,为氧化镓同质双极型器件奠定了基础,为高压高功率器件的应用开创了道路.

关键词： gallium oxide p-n junction forward characteristics rectification ratio specific on-resistance

Tuning the magnetic and electronic properties of strontium titanate by carbon doping

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Frontiers of physics 2021年第4期16卷 195-204页

作者： Hui Zeng Meng Wu Hui-Qiong Wang Jin-Cheng Zheng junyong kang Fujian Provincial Key Laboratory of Semiconductors and Applications Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesDepartment of PhysicsXiamen UniversityXiamen 361005China Xiamen University Malaysia Sepang 43900SelangorMalaysia

The magnetic and electronic properties of strontium titanate with different carbon dopant configurations are explored using first-principles calculations with a generalized gradient approximation(GGA)and the GGA+U *** results show that the structural stability,electronic properties and magnetic properties of C-doped SrTiO3 strongly depend on the distance between carbon *** both GGA and GGA+U calculations,the doping structure is mostly stable with a nonmagnetic feature when the carbon dopants are nearest neighbors,which can be ascribed to the formation of a C–C dimer pair accompanied by stronger C–C and weaker C–Ti hybridizations as the C–C distance becomes *** the C–C distance increases,C-doped SrTiO3 changes from an n-type nonmagnetic metal to ferromagnetic/antiferromagnetic half-metal and to an antiferromagnetic/ferromagnetic semiconductor in GGA calculations,while it changes from a nonmagnetic semiconductor to ferromagnetic half-metal and to an antiferromagnetic semiconductor using the GGA+U *** work demonstrates the possibility of tailoring the magnetic and electronic properties of C-doped SrTiO3,which might provide some guidance to extend the applications of strontium titanate as a magnetic or optoelectronic material.

关键词： strontium titanate carbon doping magnetic and electronic states carbon coupling C-C dimer pair GGA+U

Enhanced Raman scattering of graphene on Ag nanoislands

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Science China(Physics,Mechanics & Astronomy) 2014年第11期57卷 2021-2023页

作者： HU Wei HUANG ZhiYi ZHOU YingHui CAI WeiWei kang junyong Department of Physics Xiamen University

The effect of Ag nanoislands on the Raman of graphene was investigated in this *** with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands,which would be induced by the localized plasmon resonance in Ag *** interaction between the graphene sheet and Ag/Si substrate was further *** peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.

关键词： graphene nanostructure Raman

Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(737) Surface

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Nano-Micro Letters 2015年第2期7卷 194-202页

作者： Changjie Zhou Yaping Wu Xiaohang Chen Wei Lin Yinhui Zhou junyong kang Huili Zhu Fujian Key Laboratory of Semiconductor Materials and Applications Department of Physics Xiamen University Department of Physics School of Science Jimei University

A tiny number of Zn atoms were deposited on Si(111)-(797) surface to study the evolution process of Zninduced nanoclusters. After the deposition, three types(type I, II, and III) of Zn-induced nanoclusters were observed to occupy preferably in the faulted half-unit cells. These Zn-induced nanoclusters are found to be related to one, two, and three displaced Si edge adatoms, and simultaneously cause the depression of one, two, and three closest Si edge adatoms in the neighboring unfaulted half-unit cells at negative voltages, respectively. First-principles adsorption energy calculations show that the observed type I, II, and III nanoclusters can reasonably be assigned as the Zn3Si1, Zn5Si2, and Zn7Si3 clusters,respectively. And Zn3Si1, Zn5Si2, and Zn7Si3 clusters are, respectively, the most stable structures in cases of one, two, and three displaced Si edge adatoms. Based on the above energy-preferred models, the simulated bias-dependent STM images are all well consistent with the experimental observations. Therefore, the most stable Zn7Si3 nanoclusters adsorbed on the Si(111)-(797) surface should grow up on the base of Zn3Si1 and Zn5Si2clusters. A novel evolution process from Zn3Si1 to Zn5Si2, and finally to Zn7Si3 nanocluster is unveiled.

关键词： Nanoclusters Silicon Scanning tunneling microscopy First-principles calculations

Facile synthesis of two-dimensional MoS_(2)/WS_(2) lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method

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Science China(Physics,Mechanics & Astronomy) 2021年第10期64卷 88-94页

作者： Baofan Sun Jiajun Chen Xinyi Zhou Min Liu Yaping Wu Yuanzheng Xia Xu Li Zhiming Wu junyong kang Department of Physics Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesFujian Provincial Key Laboratory of Semiconductor Materials and ApplicationsXiamen UniversityXiamen 361005China National Laboratory of Solid State Microstructures Nanjing UniversityNanjing 210093China

Heterostructures based on two-dimensional(2D) transition-metal dichalcogenides(TMDCs) possess unique electronic and optical properties, which open up unprecedented opportunities in nanoscale optoelectronic devices. Synthesizing high-quality 2D TMDC heterostructures with different core/shell size ratios is of great significance for practical applications. Here, we report a simple one-step chemical vapor deposition(CVD) method for fabricating MoS2/WS2 lateral heterostructures with controllable core/shell size ratio. An ultrathin MoO3/WO3 film prepared by thermal evaporation was used as the precursor, and a step-like heating process was adopted to separately grow MoS2 and WS2 monolayers by taking advantage of the different melting points of MoO3 and WO3 sources. High-quality MoS2/WS2 lateral heterostructures with sharp interfaces were fabricated by optimizing the key growth parameters. Furthermore, the core/shell size ratio of heterostructures could be easily controlled by changing the thickness ratio of MoO3/WO3 film, and an approximately linear dependence between them is revealed. Compared with MoS2 or WS2 monolayers, the MoS2/WS2 heterostructure exhibited a shortened exciton lifetime owing to the type-Ⅱ energy band alignment, which is conducive to the application of high-performance devices. This work provides a facile strategy for the synthesis of 2D lateral heterostructures with controllable size ratio.

关键词： lateral heterostructures controllable size ratio chemical vapor deposition thermal evaporation one-step growth