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On-chip light sources for silicon photonics

Light(Science & Applications) 2015年第1期4卷 79-91页

作者： Zhiping Zhou Bing Yin jurgen michel State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer SciencePeking UniversityBeijing 100871China Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMA 02139USA

Serving as the electrical to optical converter,the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been ***,we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength,pump condition,power consumption,and fabrication ***,the performance of each contender is also assessed with respect to thermal stability,which is a crucial parameter to consider in complex optoelectronic integrated circuits(OEICs)and optical ***,III-V-based silicon(Si)lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near ***,in the long term,direct hetero-epitaxial growth of III–V materials on Si seems more promising for low-cost,high-yield *** demonstration of high-performance quantum dot(QD)lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip *** superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density *** Germanium(Ge)-on-Si laser is also competitive for large-scale monolithic integration in the *** with a III-V-based Si laser,the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si ***,the versatility of Ge facilitates photon emission,modulation,and detection simultaneously with a simple process complexity and low cost.

关键词： on-chip light sources optical interconnections optoelectronic integrated circuit silicon photonics

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Efficient above-band-gap light emission in germanium

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Chinese Optics Letters 2009年第4期7卷 271-273页

作者： Kenneth E.Lee Eugene A.Fitzgerald Lionel C.Kimerling jurgen michel Department of Materials Science and Engineering Microphotonics CenterMassachusetts Institute of Technology

We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20-296 K. The temperature-independence of the peak position at -0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.

关键词： Activation energy Germanium Photoluminescence Semiconductor doping Single crystals

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Single-drive high-speed lumped depletion-type modulators toward 10 fJ/bit energy consumption

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Photonics Research 2017年第2期5卷 134-142页

作者： XINBAI LI FENGHE YANG FANG ZHONG QINGZHONG DENG jurgen michel ZHIPING ZHOU State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer SciencePeking University MIT Microphotonics Center Massachusetts Institute of Technology

Reduction of modulator energy consumption to 10 fJ∕bit is essential for the sustainable development of communication *** modulators might be a viable solution if instructed by a complete theory ***,we present a complete analytical electro-optic response theory,energy consumption analysis,and eye diagrams on absolute scales for lumped *** the speed limitation is understood and alleviated by single-drive configuration,and comprehensive knowledge into the energy dependence on structural parameters significantly reduces energy *** results show that silicon modulation energy as low as 80.8 and 21.5 fJ∕bit can be achieved at 28 Gbd under 50 and 10 Ω impedance drivers,respectively.A 50 Gbd modulation is also shown to be *** analytical models can be extended to lumped modulators on other material platforms and offer a promising solution to the current challenges of modulation energy reduction.

关键词： length type high

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Graphene-based optical phase modulation of waveguide transverse electric modes

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Photonics Research 2014年第3期2卷 S0034-S0040页

作者： michele Midrio Paola Galli Marco Romagnoli Lionel C.Kimerling jurgen michel Dipartimento di Ingegneria Elettrica Gestionale e Meccanica Universitàdegli Studi di Udine33100 UdineItaly Bell Labs Alcatel-Lucentvia Trento 3020871 Vimercate(MB)Italy CNIT National Laboratory of Photonic Networks 56124 PisaItaly Massachusetts Institute of Technology 77 Massachusetts Ave.CambridgeMassachusetts 02139USA

In this paper we report TE-mode phase modulation obtained by inducing a capacitive charge on graphene layers embedded in the core of a *** is a biasing regime in which graphene absorption is negligible but large index variations can be achieved with a voltage–length product as small as V_(π)L_(π)≃0.07 V cm for straight waveguides and V_(π)L_(π)≃0.0024 V cm for 12μm radius microring *** phase modulation device uniquely enables a small signal amplitude<1 V with a micrometer-sized footprint for compatibility with CMOS circuit *** of phase-induced changes are computed for straight waveguides and for microring resonators,showing the possibility of implementing several optoelectronic functionalities as modulators,tunable filters,and switches.

关键词： waveguide optoelectronic phase

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Direct bandgap photoluminescence from n-type indirect GaInP alloys

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Photonics Research 2017年第3期5卷 239-244页

作者： CONG WANG BING WANG RIKO I.MADE SOON-FATT YOON jurgen michel School of Electrical and Electronic Engineering Nanyang Technological University Low Energy Electronic Systems Singapore-MIT Alliance for Research and Technology Department of Materials Science and Engineering Massachusetts Institute of Technology

This work studies Te doping effects on the direct bandgap photoluminescence(PL) of indirect Ga_(x)In_(1-x)P alloys(0.72 ≤ x ≤ 0.74). The temperature-dependent PL shows that the energy difference between direct Γ valley and indirect X valleys is reduced due to the bandgap narrowing(BGN) effect, and the direct band transition gradually dominates the PL spectra as temperature increases. Carrier thermalization has been observed for Te-doped Ga_(x)In_(1-x)P samples, as integrated PL intensity increases with increasing temperature from 175 to 300 K. The activation energy for carrier thermalization is reduced as doping concentration increases. Both BGN effect and carrier thermalization contribute to the carrier injection into the Γ valley. As a result, the direct band transition is enhanced in the Te-doped indirect Ga_(x)In_(1-x)P alloys. Therefore, the PL intensity of the Ga_(0.74)In_(0.26) P sample with active doping concentration of 9 × 10^(17)cm^(-3)is increased by five times compared with that of a nominally undoped sample. It is also found that the PL intensity is degraded significantly when the doping concentration is increased to 5 × 10^(18)cm^(-3). From cross-section transmission electron microscopy,no large dopant clusters or other extended defects were found contributing to this degradation.

关键词： type in is on of for Direct bandgap photoluminescence from n-type indirect GaInP alloys BGN from

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High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

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Photonics Research 2017年第6期5卷 221-228页

作者： YIDING LIN KWANG HONG LEE SHUYU BAO XIN GUO HONG WANG jurgen michel CHUAN SENG TAN School of Electrical and Electronic Engineering Nanyang Technological University Low Energy Electronic Systems LEES Singapore-MIT Alliance for Research and Technology Department of Materials Science and Engineering Massachusetts Institute of Technology

In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator(GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of ~47 mA∕cm^2 at-1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of ~97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 μm exhibit a 3 dB bandwidth of ~1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to ~32 GHz with mesa diameter of 10 μm. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics.

关键词： Si

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PIC-integrable,uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN_(x) stressor

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Photonics Research 2021年第7期9卷 1255-1263页

作者： YIDING LIN DANHAO MA KWANG HONG LEE RUI-TAO WEN GOVINDO SYARANAMUAL LIONEL CKIMERLING CHUAN SENG TAN jurgen michel School of Electrical and Electronic Engineering Nanyang Technological UniversitySingapore 639798Singapore Low Energy Electronic Systems(LEES) Singapore-MIT Alliance for Research and TechnologySingapore 138602Singapore department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMassachusetts 02139USA Materials Research Laboratories Massachusetts Institute of TechnologyCambridgeMassachusetts 02139USA Max Planck Institute of Microstructure Physics Halle(Saale)06120Germany Southern University of Science and Technology Shenzhen 518055China

Mechanical strain engineering has been promising for many integrated photonic applications. However,for the engineering of a material electronic bandgap,a trade-off exists between the strain uniformity and the integration compatibility with photonic-integrated circuits (PICs). Herein,we adopted a straightforward recess-type design of a silicon nitride (SiNx) stressor to achieve a uniform strain with enhanced magnitude in the material of interest on PICs. Normal-incidence,uniformly 0.56% tensile strained germanium (Ge)-on-insulator (GOI) metal-semiconductor-metal photodiodes were demonstrated,using the recessed stressor with 750 MPa tensile stress. The device exhibits a responsivity of 1.840.15 A∕W at 1550 nm. The extracted Ge absorption coefficient is enhanced by -3.2×to 8340 cm^(-1) at 1612 nm and is superior to that of In_(0.53)Ga_(0.47)As up to 1630 nm limited by the measurement spectrum. Compared with the nonrecess strained device,additional absorption coefficient improvement of 10%–20% in the C-band and 40%–60% in the L-band was observed. This work facilitates the recessstrained GOI photodiodes for free-space PIC applications and paves the way for various (e.g.,Ge,GeSn or III-V based) uniformly strained photonic devices on PICs.

关键词： recess strained stress

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Robust generation of frequency combs in a microresonator with strong and narrowband loss

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Photonics Research 2017年第6期5卷 77-81页

作者： JING WANG ZHAOHONG HAN YUHAO GUO LIONEL C.KIMERLING jurgen michel ANURADHA M.AGARWAL GUIFANG LI LIN ZHANG Key Laboratory of Opto-Electronic Information Technology of Ministry of Education School of Precision Instruments and Opto-Electronics Engineering Tianjin University Key Laboratory of Integrated Opto-Electronic Technologies and Devices in Tianjin School of Precision Instruments and Opto-Electronics Engineering Tianjin University Department of Materials Science and Engineering Massachusetts Institute of Technology College of Optics and Photonics CREOL and FPCE University of Central Florida

Octave-spanning frequency comb generation in microresonators is promising, but strong spectral losses caused by material absorption and mode coupling between two polarizations or mode families can be detrimental. We examine the impact of the spectral loss and propose robust comb generation with a loss of even 300 dB/*** nonlinear dynamics show that a phase change associated with spectral losses can facilitate phase matching and Kerr comb generation. Given this unique capability, we propose a novel architecture of on-chip spectroscopy systems.

关键词： Robust generation of frequency combs in a microresonator with strong and narrowband loss THz

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Broadband athermal waveguides and resonators for datacom and telecom applications

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Photonics Research 2018年第11期6卷 987-990页

作者： LIUQING HE YUHAO GUO ZHAOHONG HAN KAZUMI WADA jurgen michel ANURADHA M.AGARWAL LIONEL C.KIMERLING GUIFANG LI LIN ZHANG Key Laboratory of Opto-electronic Information Technical Science of Ministry of Education School of Precision Instruments and Opto-electronics Engineering Tianjin University Key Laboratory of Integrated Opto-electronic Technologies and Devices in Tianjin School of Precision Instruments and Opto-electronics Engineering Tianjin University Department of Materials Science and Engineering Massachusetts Institute of Technology Department of Materials Engineering University of Tokyo College of Optics and Photonics CREOL and FPCE University of Central Florida

The high-temperature sensitivity of the silicon material index limits the applications of silicon-based micro-ring resonators in integrated photonics. To realize a low but broadband temperature-dependent-wavelength-shift microring resonator, designing a broadband athermal waveguide becomes a significant task. In this work,we propose a broadband athermal waveguide that shows a low effective thermo-optical coefficient of1 × 10^(-6)∕K from 1400 to 1700 nm. The proposed waveguide shows a low-loss performance and stable broadband athermal property when it is applied to ring resonators, and the bending loss of ring resonators with a radius of >30 μm is 0.02 dB/cm.

关键词： TOC telecom applications TiO SiO

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Ultra-flat dispersion in an integrated waveguide with five and six zero-dispersion wavelengths for mid-infrared photonics

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Photonics Research 2019年第11期7卷 1279-1286页

作者： Yuhao Guo Zeinab Jafari Lijuan Xu Changjing Bao Peicheng Liao Guifang Li Anuradha M.Agarwal Lionel C.Kimerling jurgen michel Alan E.Willner Lin Zhang Key Laboratory of Opto-electronic Information Technical Science of Ministry of Education and Key Laboratory of Integrated Opto-electronic Technologies and Devices in Tianjin School of Precision Instruments and Opto-electronics EngineeringTianjin UniversityTianjin 300072China School of Computer and Electrical Engineering Shiraz UniversityShirazFarsIran School of Electronic Engineering Tianjin University of Technology and EducationTianjin 300222China Department of Electrical Engineering University of Southern CaliforniaLos AngelesCalifornia 90089USA College of Optics and Photonics CREOL and FPCEUniversity of Central FloridaOrlandoFlorida 32816USA Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMassachusetts 02139USA

We propose a new type of dispersion flattening technology, which can generate an ultra-flat group velocity dispersion profile with five and six zero-dispersion wavelengths(ZDWs). The dispersion value varies from-0.15 to 0.35 ps/(nm·km) from 4 to 8 μm, which to the best of our knowledge is the flattest one reported so far, and the dispersion flatness is improved by more than an order of magnitude. We explain the principle of producing six ZDWs. Mode distribution in this waveguide is made stable over a wide bandwidth. General guidelines to systematically control the dispersion value, sign, and slope are provided, and one can achieve the desired dispersion by properly adjusting the structural parameters. Fabrication tolerance of this waveguide is also examined.

关键词： waveguide dispersion flat

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