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具有超衍射和多受体的新型纳秒激光直写研究进展(特邀)

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中国激光 2024年第12期51卷 292-308页

作者：王骏琦陈胜垚王树马立俊杜潇姗王聪齐俊杰刘前北京科技大学材料科学与工程学院北京100083 中国科学院纳米卓越中心国家纳米科学中心中国科学院大学北京100190 南开大学物理科学学院泰达应用物理研究院弱光非线性光子学教育部重点实验室天津300071 北京化工大学理学院北京100029

激光直写(LDW)是一种无掩模、高效且经济的微纳米加工手段,它广泛应用于微机电系统、光刻掩模版制作和微纳米加工等领域。随着纳米技术的迅猛发展,研究人员对LDW系统的多受体和高加工分辨率的需求日益增加。为了满足上述需求和探索新的... 详细信息

激光直写(LDW)是一种无掩模、高效且经济的微纳米加工手段,它广泛应用于微机电系统、光刻掩模版制作和微纳米加工等领域。随着纳米技术的迅猛发展,研究人员对LDW系统的多受体和高加工分辨率的需求日益增加。为了满足上述需求和探索新的微纳米加工技术,开发新型激光直写系统已成为必然。新型纳秒LDW系统是在激光与物质的非线性相互作用的原理下工作的,不仅突破了传统LDW只能使用有机光刻胶作为受体材料的限制,同时实现了超越衍射极限的加工。已经取得的进展表明了新型纳秒激光直写在多种材料刻写及纳米结构加工方面的优势和巨大发展潜力。本文将从原理、设备、技术方法与新应用等方面对新型纳秒激光直写进行评述和讨论。

关键词：激光直写超衍射加工多受体材料纳米加工

中国式现代化背景下中山火炬开发区人民医院的高质量发展之路

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现代医院 2024年第8期24卷 1253-1255,1258页

作者：戚俊杰张洪涛刘妤王宜婧中山火炬开发区人民医院广东中山528400

习近平总书记指出,现代化道路最终能否走得通、行得稳,关键要看是否坚持以人民为中心。新形势下,人民群众对医疗资源和医疗服务的质量提出了新要求,公立医院应该适时而动,优化公立医院功能,推进医院高质量发展。中山火炬开发区人民医院... 详细信息

习近平总书记指出,现代化道路最终能否走得通、行得稳,关键要看是否坚持以人民为中心。新形势下,人民群众对医疗资源和医疗服务的质量提出了新要求,公立医院应该适时而动,优化公立医院功能,推进医院高质量发展。中山火炬开发区人民医院(中山市第六人民医院)以管理机制创新、服务细节优化、推动科研建设为切入点,持续改革与优化医院运行管理的各个方面,走出了一条高质量发展之路。本文立足中国式现代化这一大背景,介绍了中山火炬开发区人民医院在管理机制创新、医疗供给改革、医疗科研建设、人才队伍管理四个方面的改革经验,以供相关研究者参考。

关键词：中国式现代化公立医院高质量发展改革与优化

Effective spin dephasing mechanism in confined two-dimensional topological insulators

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Science China(Physics,Mechanics & Astronomy) 2016年第7期59卷 70-75页

作者： junjie qi HaiWen Liu Hua Jiang XinCheng Xie Institute of Physics Chinese Academy of Sciences Beijing 100190 China Center for Advanced Quantum Studies Department of Physics Beijing Normal University Beijing 100875 China College of Physics optoelectronics and Energy Soochow University Suzhou 215006 China International Center for Quantum Materials and School of Physics Peking University Beijing 100871 China Collaborative Innovation Center of Quantum Matter Beijing 100871 China

A Kramers pair of helical edge states in quantum spin Hall effect （QSHE） is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional （2D） QSHE, which is simulated as quantum dots modeled by 2D massive Dirac Hamiltouian. We demonstrate that the spin dephasing effect can originate from the combination of the Rashba spin-orbit coupling and electron-phonon interaction, which gives rise to inelastic backscattering in edge states within the topological insulator quantum dots, although the time-reversal symmetry is preserved throughout. Finally, we discuss the tunneling between extended helical edge states and local edge states in the QSH quantum dots, which leads to backscattering in the extended edge states. These results can explain the more robust edge transport in InAs/GaSb QSH systems.

关键词： quantum spin Hall effect bound helical states spin dephasing Rashba spin-orbit coupling electron-phonon interaction

Evolution of Berry curvature and reentrant quantum anomalous Hall effect in an intrinsic magnetic topological insulator

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Science China(Physics,Mechanics & Astronomy) 2021年第12期64卷 138-143页

作者： Chui-Zhen Chen junjie qi Dong-Hui Xu XinCheng Xie Institute for Advanced Study and School of Physical Science and Technology Soochow UniversitySuzhou 215006China Beijing Academy of Quantum Information Sciences Beijing 100193China Department of Physics Hubei UniversityWuhan 430062China International Center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China

Recently, the magnetic topological insulator(TI) MnBi2Te4 emerged as a competitive platform to realize quantum anomalous Hall(QAH) states. We report a Berry curvature splitting mechanism to realize the QAH effect in the disordered magnetic TI multilayers when switching from an antiferromagnetic order to a ferromagnetic order. We reveal that the splitting of spin-resolved Berry curvature, originating from the separation of the critical points during the magnetic switching, can give rise to a QAH insulator. We present a global phase diagram, and also provide a phenomenological picture to elucidate the Berry curvature splitting mechanism by the evolution of topological charges. At last, we predict that the Berry curvature splitting mechanism will lead to a reentrant QAH effect, which can be detected by tuning the gate voltage. Our theory will be instructive for the studies of the QAH effect in MnBi2Te4 in future experiments.

关键词： quantum anomalous Hall effect Berry curvature disorder localization

Improved efficiency and stability of perovskite solar cells with molecular ameliorating of ZnO nanorod/perovskite interface and Mg-doping ZnO

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Chinese Physics B 2021年第3期30卷 564-570页

作者： Zhenyun Zhang Lei Xu junjie qi School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China

Despite the advanced efficiency of perovskite solar cells(PSCs),electron transportation is still a pending *** the polymer polyvinylpyrrolidone(PVP)is used to enhance the electron injection,which is thanks to the passivation of the defects at the interface between the ZnO electron transporting layer(ETL)and the *** application of the PVP layer inhibits the device degradation,and 80%of the primary efficiency is kept after 30 d storage in air ***,the efficiency of the device is further enhanced by improving the conductivity and crystallinity of the ZnO ETL via Magnesium(Mg)doping in the ZnO nanorods(ZnO NRs).Moreover,the preparation parameters of the ZnO NRs are *** employing the high-crystallinity ZnO ETL and the PVP layer,the power conversion efficiency(PCE)of the champion device is increased from 16.29%to 19.63%.These results demonstrate the advantages of combining mesoscale manipulation with interface modification and doping together.

关键词： perovskite solar cells ZnO nanorods interface modification preparation parameters Mg doped ZnO

Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

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Nano-Micro Letters 2020年第8期12卷 236-279页

作者： Feng Li Tao Shen Cong Wang Yupeng Zhang junjie qi Han Zhang Institute of Microscale Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060People’s Republic of China School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083People’s Republic of China

The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties and novel *** excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric *** strain-engineered one-dimensional materials have been well investigated,while there is a long way to go for 2D *** this review,starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain,following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors,such as Janus 2D and 2D-Xene ***,recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are ***,the applications of strain-engineered 2D semiconductors in sensors,photodetectors and nanogenerators are also *** last,we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.

关键词： 2D semiconductors Strain Piezoelectric effect Piezoresistive effect Electronic and optoelectronics

Effect of RE Oxide on Impact Toughness and Primary Structure of Surfacing Metal

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Journal of Iron and Steel Research International 1998年第1期5卷 42-45页

作者： Yang qingxiang Wang Airong Liao Bo Yao Mei qi junjie Yanshan University

The effect of rare earth(RE) oxide on impact toughness and primary structure of surfacing metal was investigated . The results show that the impact toughness of surfacing metal containing RE oxide can be increased by ... 详细信息

关键词： RE oxide impact toughness primary structure surfacing metal

Microstructure analysis of AISI 304 stainless steel produced by twin-roll thin strip casting process

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Journal of University of Science and Technology Beijing 2007年第5期14卷 420-424页

作者： Zhenmin Wang Yuan Fang junjie qi Yue Zhang Yan Yu Jianchun Wu State Key Laboratory for Advanced Metals and Matefiai University of Science and Technology Beijing Beijing 100083 China R＆D Center Baosteel Advanced Technology Institute Shanghai 201900 China School of Material Science and Engineering University of Science and Technology Liaoning Anshan 114044 China

The microstructure of AISI 304 austenlte stainless steel fabricated by the thin strip casting process were investigated using optical microscope, scanning electron microscope （SEM）, transmission electron microscope （TEM）, and X-ray diffraction （XRD）. The microstructures of the casting strips show a duplex structure consisting of delta ferrite and austenite. The volume fraction of the delta ferrite is about 9.74vo1% at the center and 6.77vo1% at the surface of the casting thin strip, in vermicular and hand shapes. On account of rapid cooling and solidification in the continuous casting process, many kinds of inclusions and precipitates have been found. Most of the inclusions and precipitates are spherical complex compounds consisting of oxides, such as, SiO2, MnO, Al2O3, Cr2O3, and FeO or their multiplicity oxides of ***2O3, ***2, and ***2. Many defects including dislocations and stacking faults have also formed during the rapid cooling and solidification process, which is helpful to improve the mechanical properties of the casting strips.

关键词： austenite stainless steel casting thin strip morphology microstructure

Quantum to classical crossover under dephasing effects in a two-dimensional percolation model

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Science China(Physics,Mechanics & Astronomy) 2020年第2期63卷 130-134页

作者： junjie qi Haiwen Liu Chui-Zhen Chen Hua Jiang X.C.Xie International Center for Quantum Materials and School of Physics Peking UniversityBeijing 100871China Collaborative Innovation Center of Quantum Matter Beijing 100871China Center for Advanced Quantum Studies Department of PhysicsBeijing Normal UniversityBeijing 100875China Institute for Advanced Study and School of Physical Science and Technology Soochow UniversitySuzhou 215006China

Scaling theory predicts complete localization in d = 2 in quantum systems belonging to the orthogonal class(i.e., with timereversal symmetry and spin-rotation symmetry). The conductance g behaves as g^exp(-L/l) with system size L and localization length l in the strong disorder limit. However, classical systems can always have metallic states in which Ohm’s law shows a constant g in d=2. We study a two-dimensional quantum percolation model by controlling dephasing effects. The numerical investigation of g aims at simulating a quantum-to-classical percolation evolution. An unexpected metallic phase, where g increases with L, generates immense interest before the system becomes completely classical. Furthermore, the analysis of the scaling plot of g indicates a metal-insulator crossover.

关键词： quantum percolation model dephasing effects metal-insulator crossover