检索结果-南通市图书馆

Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

Light(Science & Applications) 2021年第4期10卷 600-609页

作者： Jinchao Tong Fei Suo Tianning Zhang Zhiming Huang junhao chu Dao Hua Zhang School of Electrical and Electronic Engineering Nanyang Technological UniversityNanyang Avenue639798 SingaporeSingapore State Key Laboratory of Infrared Physics Shanghai Institute of Technical

High-performance uncooled millimnetre and terahertz wave detectors are required as a building block for a wide range of *** state-of-the art technologies,however,are plagued by low sensitivity,narrow spectral bandwidth,and complicated ***,we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature *** making a nanogroove array in the grown InSb layer,strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb-air interfaces,which results in significant improvement in detecting performance.A noise equivalent power(NEP)of 2.2× 10^(-14)WHz^(-1/2) or a detectivity(D)of 2.7× 10^(12)cmHz^(1/2) W^(-1) at 1.75 mm(0.171 THz)is achieved at room *** lowering the temperature to the thermoelectric cooling available 200 K,the corresponding NEP and D'of the nanogroove device can be improved to 3.8× 10^(-15)WHz^(-1/2) and 1.6× 10^(13) cm Hz^(-1/2) w^(-1),*** addition,such a single device can perform broad spectral band detection from 0.9 mm(0.330 THz)to 9.4 mm(0.032 THz).Fast responses of 3.5μs and 780 ns are achieved at room temperature and 200 K,*** high-performance millimnetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications,walk-through security,biological diagnosis,spectroscopy,and remote *** addition,the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.

关键词： wave spectral terahertz

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

A new pathway towards all-electric spintronics:electric-field control of spin states through surface/interface effects

引用

Science China(Physics,Mechanics & Astronomy) 2013年第1期56卷 232-244页

作者： GONG ShiJing DING HangChen ZHU WanJiao DUAN chunGang ZHU ZiQiang chu junhao Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal University National Laboratory for Infrared Physics Chinese Academy of Sciences

Manipulation of spin states via purely electric means forms the research branch "all-electric spintronics".In this paper,we briefly review recent progress relating to the all-electric spintronics,including electric-field control of Rashba spin-orbit coupling,magnetic anisotropy,exchange bias,ferromagnetism,and other forms of magnetoelectric *** focus is given to surface/interface systems,including semiconductor(oxide) heterostructures,magnetic/nonmagnetic surfaces,semiconductor-metal interfaces,and other nanostructures,which can be good candidates for functional materials for spintronic.

关键词： Rashba magnetoelectric effect multiferroic surface interface

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Room temperature preparation of highly stable cesium lead halide perovskite nanocrystals by ligand modification for white lightemitting diodes

引用

Nano Research 2021年第8期14卷 2770-2775页

作者： Yu Zhang Guishun Li Changkun She Shaohua Liu Fangyu Yue Chengbin Jing Ya Cheng junhao chu Engineering Research Center for Nanophotonics and Advanced Instrument of Ministry of Education Key Laboratory of Polar Materials and Devices(Ministry of Education)The Extreme Optoelectromechanics LaboratoryDepartment of MaterialsSchool of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241China

The poor stability of halide perovskite nanocrystals(NCs)has severely hindered future practical ***,we proposed a facile and effective ligand modification route to synthesize stable CsPbBr_(3) nanocrystals by introducing a double-terminal ligand,namely 4,4'-Azobis(4-cyanovalericacid)(CA),to replace the conventional oleic acid(OA)ligand at room *** as-synthesized CsPbBr_(3)-CA not only possesses high photoluminescence quantum yield(72%)related to the reduced trap defects,but also shows significantly improved stability exposure to water,ethanol,light,and/or heat benefiting from the CA ligand anchored to NC surfaces *** photoluminescence intensity of CsPbBr_(3)-CA maintains about 80%and 75%of its initial emission intensity after immersed in water or ethanol for 360 min,respectively,whereas that of the CsPbBr_(3)-OA was quenched completely within a few ***,an all-inorganic white light-emitting diode(LED)covered 126%National Television System Committee(NTSC)standard and 92%Rec.2020 standard was fabricated by combining the green CsPbBr_(3)-CA and commercial red-emitting K2SiF6:Mn4+(KSF)phosphors onto a blue LED ***,the presented work initiates the development of the room temperature preparation of high quality CsPbBr_(3) and shows prospect for next-generation displays.

关键词： perovskite nanocrystals ligand modification stability white light-emitting diode

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

引用

Photonics Research 2021年第5期9卷 714-721页

作者： JIN HONG HUIMIN WEN JIAJING HE JINGQUAN LIU YAPING DAN JENS W.TOMM FANGYU YUE junhao chu chuNGANG DUAN Key Laboratory of Polar Materials and Devices Ministry of EducationEast China Normal UniversityShanghai 200241China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Laboratory Department of Micro/Nano ElectronicsUniversity of Michigan-Shanghai Jiao Tong University Joint InstituteShanghai Jiao Tong UniversityShanghai 200240China Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie 12489 BerlinGermany National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Silicon-based light sources, including light-emitting diodes(LEDs) and laser diodes(LDs) for information transmission, are urgently needed for developing monolithic integrated silicon photonics. Silicon with erbium ions(Er^(3+)) doped by ion implantation is considered a promising approach, but it suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 μm from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA(~0.8 A∕cm^(2)). Time-resolved photoluminescence and photocurrent results have revealed the complex carrier transfer dynamics by relaxing electrons from the Si conduction band to the Er^(3+) ion. This picture differs from the frequently assumed energy transfer via electron–hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves the way for fabricating superluminescent diodes or efficient LEDs at communication wavelengths based on rare-earth-doped silicon.

关键词： diodes pumped light

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

A study on ionic gated MoS2 phototransistors

引用

Science China(Information Sciences) 2019年第12期62卷 133-140页

作者： Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN Weida HU Xiangjian MENG Wenzhong BAO Jianlu WANG junhao chu School of Physical Science and Technology Shanghai Tech University State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences State Key Laboratory of ASIC and System School of Microelectronics Fudan University

Molybdenum disulfide(MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an Mo S2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2and source/drain electrodes can be widely regulated from 11 to 179 me V. The MoS2phototransistor exhibits excellent responsivity of 2.68 × 104A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

关键词： MoS2 phototransistor electrolyte-gel gating Schottky barrier electric double layer two-dimensional materials

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

从BRDF到BPDF:遥感反演基础模型的演进初探

引用

中国科学：信息科学 2024年第8期54卷 2001-2020页

作者：尚可晏磊张飞舟褚君浩杨彬刘思远 Kevin TANSEY 贾秀萍 Oleg DUBOVIK 张子晗李飞北京大学地球与空间科学学院遥感与地理信息系统研究所北京大学空间信息集成与3S工程应用北京市重点实验室北京100871 中国科学院上海技术物理研究所红外物理国家重点实验室上海200083 湖南大学电气与信息工程学院长沙410082 中国兵器工业导航与控制技术研究所北京100089 School of Geography Geologyand the EnvironmentUniversity of LeicesterLeicester LE17RHUK School of Engineering and Technology The University of New South WalesCanberra ACT 2600Australia Laboratoire d'Optique Atmospherique CNRS/UniversitéLilleVilleneuve d'Ascq 59655France

光的本质是横波电磁波矢量,以双向反射分布函数BRDF (bidirectional reflectance distribution function)为基础模型的标量遥感体系只利用植被反射光的整体强度信息,无法进一步区分反射辐射蕴含的叶表、叶内和冠层结构信息;在标量遥感... 详细信息

光的本质是横波电磁波矢量,以双向反射分布函数BRDF (bidirectional reflectance distribution function)为基础模型的标量遥感体系只利用植被反射光的整体强度信息,无法进一步区分反射辐射蕴含的叶表、叶内和冠层结构信息;在标量遥感基础上考虑垂直于电磁波传播方向的二维偏振矢量特性(强度+方向)就能深化为矢量遥感体系,从而有望精确刻画反射光中蕴含的多种信息,提升植被参数反演精度.刻画偏振反射空间分布的双向偏振分布函数BPDF目前存在精度低、泛化性差等问题,因此进一步探索矢量遥感基础理论,构建通用性强的植被矢量遥感基础模型具有迫切的现实需求.本文旨在利用光子与植被元素的相互作用构建通用性较强的植被BPDF物理模型.首先基于光子–植被元素相互作用的光谱不变原理,提出基于方向逃逸概率的植被BPDF物理模型基础形式,并基于植被单次反射的辐射传输理论推导模型解析表达;随后通过考虑叶片散射随干物质含量的变化,提出光谱不变原理优化表达并推导模型通用表达式;最后分别利用三维矢量辐射传输模型和多尺度实测数据实现模型的正演直接验证和间接验证.结果表明,本文构建的BPDF物理模型的解析表达和通用表达在不同植被场景下,对偏振反射率的正演均方根误差可达0.001以内,与矢量辐射传输模型正演结果在半球空间内具有很强一致性,在多尺度实测数据也简洁验证了模型关系的稳定性,模型R2普遍高于0.9.相比于现存植被偏振反射模型,本文构建的模型兼具物理机理、简洁形式、可接受的参数化方案、较高精度和较强泛化能力,对浓密植被具备通用性,为在BRDF一维标量遥感的基础上进一步考虑BPDF二维偏振特性从而形成矢量遥感体系这一转变过程提供了理论基础和探索性方案.

关键词：植被 BPDF 矢量遥感物理模型偏振

来源：

维普期刊数据库

同方期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Associative learning of a three-terminal memristor network for digits recognition

引用

Science China(Information Sciences) 2023年第2期66卷 209-218页

作者： Yiming REN Bobo TIAN Mengge YAN Guangdi FENG Bin GAO Fangyu YUE Hui PENG Xiaodong TANG Qiuxiang ZHU junhao chu chungang DUAN Key Laboratory of Polar Materials and Devices (MOE) Ministry of Education Department of ElectronicsEast China Normal University Zhejiang Lab Institute of Microelectronics Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Collaborative Innovation Center of Extreme Optics Shanxi University

Imitating the associative intelligence of the biological brain is attractive but is poorly achieved in hardware because the complex tunable connection in neural networks is difficult to reproduce. We develop a circuit composed of a three-terminal memristor network to reproduce the biological conditioning process artificially. The synaptic weight between co-firing neurons is strengthened simultaneously by generating a feedback signal from the integrate-and-fire neuron to the gate of the synaptic memristor. The network allows the multi-associative capacity of recalling more than one digit in one circuit. Both single and multi-associative learning for recalling digital images are achieved. Furthermore, all 10 digital images from “0” to “9” are successfully recalled in an associative network with such paralleling circuits. Assisted by this associative layer, a typical classification network effectively improves the recognition rate for fragmentary digital *** work sheds light on brain-inspired artificial associative memory and provides a strategy for applications,such as object recognition with partial features and similar scenes.

关键词： artificial intelligence associative learning memristor classification network

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

磁有序CoH_(2)SeO_(4)薄片中的室温铁电性

引用

Science China Materials 2024年第5期67卷 1654-1660页

作者：陈璐秋余冰沈阳刘逸飞王号南冯光迪朱秋香罗卫东刘俊明万建国赵庆彪田博博褚君浩段纯刚 Key Laboratory of Polar Materials and Devices(MOE) Shanghai Center of Brain-inspired Intelligent Materials and Devicesand Department of ElectronicsEast China Normal UniversityShanghai200241China Zhejiang Lab Hangzhou310000China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing210093China Key Laboratory of Artificial Structures and Quantum Control School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai200240China School of Chemistry and Environmental Engineering Wuhan Institute of TechnologyWuhan430205China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China Institute of Optoelectronics Fudan UniversityShanghai200433China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan030006China

本文通过第一性原理计算和实验表征证明了二维CoH_(2)SeO_(4)薄膜的磁有序和滑移铁电性.首先,实验结果证实了粉末CoH_(2)SeO_(4)样品的反铁磁序.同时,第一性原理计算表明单层CoH_(2)SeO_(4)具有反铁磁(AFM-I)基态(TN≈75 K),且预测了二... 详细信息

本文通过第一性原理计算和实验表征证明了二维CoH_(2)SeO_(4)薄膜的磁有序和滑移铁电性.首先,实验结果证实了粉末CoH_(2)SeO_(4)样品的反铁磁序.同时,第一性原理计算表明单层CoH_(2)SeO_(4)具有反铁磁(AFM-I)基态(TN≈75 K),且预测了二维CoH_(2)SeO_(4)薄膜具有以不对称的三重势阱态为特征的滑移铁电性,并在实验中测得了180°压电滞回线、可反转铁电畴和二次谐波信号.此外,在基于二维CoH_(2)SeO_(4)薄膜的电容器中获得铁电材料所特有的电滞回线和蝴蝶状的电容曲线.介电温谱测试表明二维CoH_(2)SeO_(4)薄膜的铁电转变温度约为370 ***_(2)SeO_(4)中滑移铁电性和反铁磁性的出现为获得低维多铁材料指出了一条新的途径.

关键词： two-dimensional materials sliding ferroelectricity multiferroic materials

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Interface engineering of ferroelectric-gated MoS2 phototransistor

引用

Science China(Information Sciences) 2021年第4期64卷 166-173页

作者： Shuaiqin WU Xudong WANG Wei JIANG Luqi TU Yan CHEN Jingjing LIU Tie LIN Hong SHEN Jun GE Weida HU Xiangjian MENG Jianlu WANG junhao chu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences

Two-dimensional(2D) layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection. However,most 2D materials are very sensitive to the environment. Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials. Here,we focus on a molybdenum disulfide(MoS2) phototransistor gated by ferroelectrics, and insert a hexagonal boron nitride(h-BN) layer between MoS2and the ferroelectric film to improve the interface. To clarify the role of h-BN in this device, two parallel devices are prepared on the same MoS2flake. One device is covered with h-BN, while the other is in direct contact with the ferroelectric film. The electronic and optoelectronic properties of these two devices are then measured and compared. Experimental results reveal that, compared to device without h-BN, the MoS2phototransistor with h-BN exhibits higher carrier mobility(average value: 85 cm~2·V-1·s-1and highest value: 185 cm~2·V-1·s-1), larger responsivity(85 A·W-1), and larger detectivity(1.76×1013Jones). Thus, this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials.

关键词： 2D materials ferroelectrics MoS$_{2}$phototransistors h-BN interface engineering

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Ultrathin NiO/Ni_(3)S_(2)Heterostructure as Electrocatalyst for Accelerated Polysulfide Conversion in Lithium-Sulfur Batteries

引用

Energy & Environmental Materials 2023年第6期6卷 182-190页

作者： chunqiao Jin Pengbo Zhai Jianli Tang Liuxiang Huo Qianqian He Yan Ye Lingxi Qiu Kai Jiang Liyan Shang Yawei Li Yongji Gong Zhigao Hu junhao chu Department of Materials School of Physics and Electronic ScienceTechnical Center for Multifunctional Magneto-Optical Spectroscopy(Shanghai)Engineering Research Center of Nanophotonics&Advanced Instrument(Ministry of Education)East China Normal UniversityShanghai 200241China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan Shanxi 030006China School of Materials Science and Engineering Beihang UniversityBeijing 100191China

The practical application of Lithium-Sulfur batteries largely depends on highly efficient utilization and conversion of sulfur under the realistic condition of high-sulfur content and low electrolyte/sulfur *** design of heterostructure electrocatalysts with abundant active sites and strong interfacial electronic interactions is a promising but still challenging strategy for preventing shuttling of polysulfides in lithium-sulfur ***,ultrathin nonlayered NiO/Ni_(3)S_(2)heterostructure nanosheets are developed through topochemical transformation of layered Ni(OH)_(2)templates to improve the utilization of sulfur and facilitate stable cycling of *** a multifunction catalyst,NiO/Ni_(3)S_(2)not only enhances the adsorption of polysulfides and shorten the transport path of Li ions and electrons but also promotes the Li_(2)S formation and transformation,which are verified by both in-situ Raman spectroscopy and electrochemical ***,the cell with NiO/Ni_(3)S_(2)as electrocatalyst delivers an area capacity of 4.8 mAh cm^(-2)under the high sulfur loading(6 mg cm^(-2))and low electrolyte/sulfur ratio(4.3 pL mg^(-1)).The strategy can be extended to 2D Ni foil,demonstrating its prospects in the construction of electrodes with high gravimetric/volumetric energy *** designed electrocatalyst of ultrathin nonlayered heterostructure will shed light on achieving high energy density lithium-sulfur batteries.

关键词： density functional theory simulation Li-S batteries multifunction electrocatalyst NiO/Ni_(3)S_(2)heterostructures ultrathin nonlayered nanosheets

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：