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InfoMat 2023年第4期5卷 14-24页

作者： Youngkyoung Ha judith l.macmanus-driscoll Shinbuhm lee Department of Physics and Chemistry DGISTDaeguRepublic of Korea Department of Emerging Materials Science DGISTDaeguRepublic of Korea Department of Materials Science and Metallurgy University of CambridgeCambridgeUK

Designing super-broadband transparent conductors is challenging because of the exclusive nature of conductivity and infrared ***,using a one-step process,we created vertically aligned nanocomposite conducting films with high transparency across a super-broad wavelength *** aligned transparent Ba_(3)V_(2)O_(8)nanocolumns with lateral-100-nm widths enable high transmittance(>50%,even at a 4-μm wavelength)for all incident light and outperform that of Sn-doped In_(2)O_(3),while the conducting SrVO_(3)matrix retains low resistivity(lectron microscopy,scattering scanning nearfield infrared microscopy,and X-ray diffraction revealed that spontaneous phase separation of Ba_(3)V_(2)O_(8)nanocolumns in a SrVO_(3)matrix film occurs via self-assembled epitaxial *** vertically aligned nanocomposite films provide a fertile platform for next-generation optoelectronics.

关键词： epitaxial nucleation spontaneous phase separation SrVO_(3)-Ba_(3)V_(2)O_(8) super-broadband transparent conductors vertically aligned nanocomposite films

Interplay of polarization,strength,and loss in dielectric films for capacitive energy storage:Current status and future directions

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Journal of Materiomics 2023年第3期9卷 516-519页

作者： Hao Pan Yizhe Jiang judith l.macmanus-driscoll Department of Materials Science and Engineering University of CaliforniaBerkeleyCA94720USA Department of Materials Science and Metallurgy University of Cambridge27 Charles Babbage RoadCambridgeCB30FSUnited Kingdom

Energy-storage dielectric capacitors have emerged as one of the key technologies for high-power systems such as green energy generation,hybrid/electrical vehicles,pulsed power devices,etc.[1]The high-power feature of dielectric capacitors originates from the fast electrostatic *** is in contrast with the slower electrochemical processes in batteries and supercapacitors.

关键词： Dielectric film Energy storage Polarization Strength loss

High Yield Transfer of Clean large-Area Epitaxial Oxide Thin Films

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Nano-Micro letters 2021年第2期13卷 363-376页

作者： Bowen Zhang Chao Yun judith l.macmanus-driscoll Department of Materials Science and Metallurgy University of Cambridge27 Charles Babbage RoadCambridge CB30FSUK

In this work,we have developed a new method for manipulating and transferring up to 5 mm×10 mm epitaxial oxide thin *** method involves fixing a PET frame onto a PMMA attachment film,enabling transfer of epitaxial films lifted-off by wet chemical etching of a Sr3Al2O6 sacrificial *** crystallinity,surface morphology,continuity,and purity of the films are all preserved in the transfer *** demonstrate the applicability of our method for three different film compositions and structures of thickness~100 ***,we show that by using epitaxial nanocomposite films,lift-off yield is improved by~50% compared to plain epitaxial films and we ascribe this effect to the higher fracture toughness of the *** work shows important steps towards large-scale perovskite thin-film-based electronic device applications.

关键词： Free-standing oxide thin films High yield transfer Wet etching Crack prevention

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next-generation rigid and flexible device applications

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InfoMat 2021年第5期3卷 536-576页

作者： Mari Napari Tahmida N.Huq Robert l.Z.Hoye judith l.macmanus-driscoll Department of Materials Science and Metallurgy University of CambridgeCambridgeUK Centre for Electronics Frontiers Zepler Institute for Photonics and NanoelectronicsUniversity of SouthamptonSouthamptonUK Department of Materials Imperial College LondonLondonUK

Nickel oxide(NiOx),a p-type oxide semiconductor,has gained significant attention due to its versatile and tunable *** has become one of the critical materials in wide range of electronics applications,including resistive switching random access memory devices and highly sensitive and selective sensor *** addition,the wide band gap and high work function,coupled with the low electron affinity,have made NiOx widely used in emerging optoelectronics and p-n *** properties of NiOx thin films depend strongly on the deposition method and *** implementation of NiOx in next-generation devices will require controllable growth and processing methods that can tailor the morphological and electronic properties of the material,but which are also compatible with flexible *** this review,we link together the fundamental properties of NiOx with the chemical processing methods that have been developed to grow the material as thin films,and with its application in electronic *** focus solely on thin films,rather than NiOx incorporated with one-dimensional or two-dimensional *** review starts by discussing how the p-type nature of NiOx arises and how its stoichiometry affects its electronic and magnetic *** discuss the chemical deposition techniques for growing NiOx thin films,including chemical vapor deposition,atomic layer deposition,and a selection of solution processing approaches,and present examples of recent progress made in the implementation of NiOx thin films in devices,both on rigid and flexible ***,we discuss the remaining challenges and limitations in the deposition of device-quality NiOx thin films with chemical growth methods.

关键词： atomic layer deposition chemical vapor deposition electronics nickel oxide solution processing thin films

large ferro-pyro-phototronic effect in 0.5Ba(Zr_(0.2)Ti_(0.8))O_(3)-0.5(Ba_(0.7)Ca_(0.3))TiO_(3)thin films integrated on silicon for photodetection

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Carbon Energy 2023年第6期5卷 1-10页

作者： JoséP.B.Silva Katarzyna Gwozdz luís S.Marques Mario Pereira Maria J.M.Gomes judith l.macmanus‐driscoll Robert l.Z.Hoye Centre of Physics of Universities of Minho and Porto(CF‐UM‐UP) University of MinhoBragaPortugal laboratory of Physics for Materials and Emergent Technologies LapMETUniversity of MinhoBragaPortugal Department of Quantum Technologies Faculty of Fundamental Problems of TechnologyWroclaw University of Science and TechnologyWroclawPoland Department of Materials Science and Metallurgy CambridgeUK Inorganic Chemistry laboratory Department of ChemistryUniversity of OxfordOxfordUK Department of Materials Imperial College LondonLondonUK

Coupling together the ferroelectric,pyroelectric,and photovoltaic characteristics within a single material is a novel way to improve the performance of *** this work,we take advantage of the triple multifunctionality shown by 0.5Ba(Zr_(0.2)Ti_(0.8))O_(3)-0.5(Ba_(0.7)Ca_(0.3))TiO_(3)(BCZT),as demonstrated in an Al/Si/SiOx/BCZT/ITO thin-film *** Si/SiOx acts as an n-type layer to form a metal-ferroelectric-insulator-semiconductor heterostructure with the BCZT,and with Al and ITO as *** photo-response of the device,with excitation from a violet laser(405 nm wavelength),is carefully investigated,and it is shown that the photodetector performance is invariant with the chopper frequency owing to the pyro-phototronic effect,which corresponds to the coupling together of the pyroelectric and photovoltaic ***,the photodetector performance was significantly better than that of the devices operating based only on the pyro-phototronic effect by a factor of 4,due to the presence of ferroelectricity in the ***,after a poling voltage of−15 V,for a laser power density of 230mW/cm^(2)and at a chopper frequency of 400Hz,optimized responsivity,detectivity,and sensitivity values of 13.1mA/W,1.7×10^(10)Jones,and 26.9,respectively,are ***,ultrafast rise and fall times of 2.4 and 1.5μs,respectively,are obtained,which are 35,000 and 36,000 times faster rise and fall responses,respectively,than previous reports of devices with the ferro-pyro-phototronic *** is understood based on the much faster ferroelectric switching in ferroelectric thin films owing to the predominant 180°domains in a single direction out of plane.

关键词： ferroelectric ferro-pyro-phototronic effect photodetector polarization-controlled response

Ferroelectricity Induced by Oxygen Vacancies in Rhombohedral ZrO_(2) Thin Films

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Energy & Environmental Materials 2024年第1期7卷 229-237页

作者： Veniero lenzi José P.B.Silva Břetislav Šmíd Vladimir Matoín Cosmin M.Istrate Corneliu Ghica judith l.macmanus-driscoll luís Marques Physics Center of Minho and Porto Universities(CF-UM-UP) University of MinhoCampus de Gualtar 4710-057Braga Portugal laboratory of Physics for Materials and Emergent Technologies LapMETUniversity of Minho4710-057Braga Portugal Department of Surface and Plasma Science Faculty of Mathematics and PhysicsCharles UniversityV Holešovičkách 218000Prague 8 Czech Republic National Institute of Materials Physics 105 bis Atomistilor 077125Magurele Romania Department of Materials Science and Metallurgy 27 Charles Babbage Rd.Cambridge CB3 OFSUK

Rhombohedral phase Hf_(x)Zr_(1.x)O_(2)(HZO,x from 0 to 1)films are promising for achieving robust ferroelectric polarization without the need for an initial wake-up pre-cycling,as is normally the case for the more commonly studied orthorhombic ***,a large spontaneous polarization observed in rhombohedral films is not fully understood,and there are also large discrepancies between experimental and theoretical *** this work,in rhombohedral ZrO_(2)thin films,we show that oxygen vacancies are not only a key factor for stabilizing the phase,but they are also a source of ferroelectric polarization in the *** is shown experimentally through the investigation of the structural properties,chemical composition and the ferroelectric properties of the films before and after an annealing at moderate temperature(400℃)in an oxygen environment to reduce the V_(o)concentration *** experimental work is supported by density functional theory(DFT)calculations which show that the rhombohedral phase is the most stable one in highly oxygen defective ZrO_(2)*** DFT calculations also show that V_(o)contribute to the ferroelectric *** findings reveal the importance of V_(o)for stabilizing rhombohedral ZrO_(2)thin films with superior ferroelectric properties.

关键词： charged defects ferroelectric polarization rhombohedral phase stability zirconia

Sodium Diffuses from Glass Substrates through P1 lines and Passivates Defects in Perovskite Solar Modules

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Energy & Environmental Materials 2023年第6期6卷 393-401页

作者： Felix Utama Kosasih Francesco Di Giacomo Jordi Ferrer Orri Kexue li Elizabeth M.Tennyson Weiwei li Fabio Matteocci Gunnar Kusch Narges Yaghoobi Nia Rachel A.Oliver judith l.macmanus-driscoll Katie l.Moore Samuel D.Stranks Aldo Di Carlo Giorgio Divitini Caterina Ducati Department of Materials Science and Metallurgy University of Cambridge27 Charles Babbage RoadCambridge CB30FSUK Centre for Hybrid and Organic Solar Energy(CHOSE) Department of Electronic EngineeringUniversity of Rome Tor VergataRome 00133Italy Cavendish laboratory University of CambridgeJJ Thomson AvenueCambridge CB30HEUK Department of Materials and Photon Science Institute University of ManchesterOxford RoadManchester M139PLUK Department of Chemical Engineering and Biotechnology University of CambridgePhilippa Fawcett DriveCambridge CB30ASUK laboratory for Advanced Solar Energy(lASE) National University of Science and Technology MISiSLeninskiy Prospekt 4Moscow 119049Russia Energy Research Institute@NTU Nanyang Technological University50 Nanyang DriveSingapore 637553Singapore MIIT Key laboratory of Aerospace Information Materials and Physics College of PhysicsNanjing University of Aeronautics and AstronauticsNanjing 211106China Istituto di Struttura della Materia-CNR(ISM-CNR) Via del Fosso del Cavaliere 100Rome 00133Italy Electron Spectroscopy and Nanoscopy Istituto Italiano di TecnologiaVia Morego 30Genova 16163Italy

Most thin-film photovoltaic modules are constructed on soda-lime glass(SlG)substrates containing alkali oxides,such as Na_(2)*** may diffuse from SlG into a module's active layers through P1 lines,an area between a module's constituent cells where the substrate-side charge transport layer(CTl)is in direct contact with *** diffusion from SlG is known to cause several important effects inⅡ-Ⅵand chalcogenide solar modules,but it has not been studied in perovskite solar modules(PSMs).In this work,we use complementary microscopy and spectroscopy techniques to show that Na diffusion occurs in the fabrication process of *** diffuses vertically inside P1 lines and then laterally from P1 lines into the active area for up to 360 *** propose that this process is driven by the high temperatures the devices are exposed to during CTl and perovskite *** diffused Na preferentially binds with Br,forming Br-poor,l-rich perovskite and a species rich in Na and Br(Na-Br)close to P1 ***-Br passivates defect sites,reducing non-radiative recombination in the perovskite and boosting its luminescence by up to 5×.Na-Br is observed to be stable after 12 weeks of device storage,suggesting long-lasting effects of Na *** results not only point to a potential avenue to increase PSM performance but also highlight the possibility of unabated Na diffusion throughout a module's lifetime,especially if accelerated by the electric field and elevated temperatures achievable during device operation.

关键词： defect passivation monolithic interconnection perovskite solar modules soda-lime glass sodium diffusion solar cells thin-film photovoltaics

Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films

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InfoMat 2020年第4期2卷 769-774页

作者： Mari Napari Tahmida N.Huq Tuhin Maity Daisy Gomersall Kham M.Niang Armin Barthel Juliet E.Thompson Sami Kinnunen Kai Arstila Timo Sajavaara Robert l.ZHoye Andrew J.Flewitt judith l.macmanus-driscoll Department of Materials Science and Metallurgy University of CambridgeCambridgeUK Electrical Engineering Division Department of EngineeringUniversity of CambridgeCambridgeUK Department of Physics University of JyvaskylaJyvaskylaFinland Zepler Institute for Photonics and Nanoelectronics University of SouthamptonSouthamptonUK

Nickel oxide(NiO)is one of the most studied transition metal oxides due to its versatile chemical and electronic properties,enabling it to be used in a wide variety of *** its stoichiometric form,NiO is an antiferromagnetic insulator,with resistivity up to 10^13Ωcm.1 When Ni vacancies are introduced,the nonstoichiometric nickel oxide becomes a semiconductor.

关键词： atomic layer deposition chemical vapor deposition nickel oxide solution deposition thin films

生物矿化法制备平片状YBCO粉末的超导连接性及补氧退火对超导连结性影响的研究

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人工晶体学报 2014年第3期43卷 543-549页

作者：张子立索红莉 Wimbush Stuart Kursumovic Ahmed 毛磊 macmanus-driscoll judith 北京工业大学国家教育部功能材料重点实验室北京100024 剑桥大学材料与冶金系

本文报道了用生物矿化法制备平片状YBCO粉末的过程，并通过对Bean模型参数选择研究了YBCO粉末内部晶粒间的超导连接性。结果表明在这种平片状YBCO粉末内部存在有自发的晶粒间超导连接，这种超导连接存在于由平片状YBCO晶粒构成的具有相... 详细信息

本文报道了用生物矿化法制备平片状YBCO粉末的过程，并通过对Bean模型参数选择研究了YBCO粉末内部晶粒间的超导连接性。结果表明在这种平片状YBCO粉末内部存在有自发的晶粒间超导连接，这种超导连接存在于由平片状YBCO晶粒构成的具有相似生长方向的晶粒簇当中，而在77K下，超导连接区域平均包含3～5个平片状晶粒。本文还就补氧退火中烧结温度和保温时间对平片状YBCO粉末超导连接性的影响进行了系统的研究。

关键词：生物矿化法超导连接涂层超导 YBCO

Jun Zheng,Minghui Wei,Siyi Quan,Yicheng Feng,Peng Wen State Key laboratory of Traction Power,Southwest Jiaotong University,Chengdu 610031,People’s Republic of China

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Superconductivity 2022年第3期 1-38页

作者： Zili Zhang judith macmanus-driscoll Hongli Suo Qiuliang Wang Institute of Electrical Engineering Chinese Academy of SciencesBeijing 100190China University of Cambridge Department Materials Science&Metallurgy27 Charles Babbage RdCambridge CB30FSUnited Kingdom Key laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100022China University of Chinese Academy of Sciences Beijing 100049China

This review paper summarizes and analyses the current literature on the synthesis of dense MgB_(2) bulk with high density and by both the modified solid reaction method and the Mg infiltration ***_(2) bulk shows Telsa‐level magnetic field‐trapping ability in small volumes(1–5 cm^(3))at 15–20 K,which is beneficial for multiple applications,particularly where light weighting is *** review also compares the properties of MgB_(2) to rare earth barium cuprate bulk magnets and NbTi solenoid magnets and discuess potential applications such as magnetic lenses,compact NMR,and magnetic shielding.

关键词： MgB_(2) High density bulk Mg infiltration Trapped field Superconducting connectivity