检索结果-南通市图书馆

A progressive route for tailoring electrical transport in MoS2

Nano Research 2016年第2期9卷 380-391页

作者： Muhammad Arslan Shehzad1 Sajjad Hussain Muhammad Farooq Khan Jonghwa Eom jongwan jung Yongho Seo Graphene Research Institute Sejong University Seoul 143-747 Republic of Korea Faculty of Nanotechnology & Advanced Materials Engineering and Graphene Research Institute Sejong University Seoul 143-74 7Republic of Korea Department of Physics and Graphene Research Institute Sejong University Seoul 143-747 Republic of Korea

Typically, molybdenum disulfide （MoS2） synthesized by chemical vapor deposition （CVD） is polycrystalline; as a result, the scattering of charge carriers at grain boundaries can lead to performances lower than those observed in exfoliated single-crystal MoS2. Until now, the electrical properties of grain boundaries have been indirectly studied without accurate knowledge of their location. Here, we present a technique to measure the electrical behavior of individual grain boundaries in CVD-grown MoS2, imaged with the help of aligned liquid crystals. Unexpectedly, the electrical conductance decreased by three orders of magnitude for the grain boundaries with the lowest on/off ratio. Our study provides a useful technique to fabricate devices on a single-crystal area, using optimized growth conditions and device geometry. The photoresponse, studied within a MoS2 single grain, showed that the device responsivity was comparable with that of the exfoliated MoS2-based photodetectors.

关键词： MoS2 grain boundary liquid crystal electrical properties photoresponse

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

引用

Nano Research 2022年第3期15卷 2263-2277页

作者： Asif Ali Haider Abbas Muhammad Hussain Syed Hassan Abbas Jaffery Sajjad Hussain Changhwan Choi jongwan jung HMC(Hybrid Materials Center)and Department of Nanotechnology and Advanced Materials Engineering Sejong UniversitySeoul 143–747Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

Investigating the promising chalcogenide materials for the development of memory and advanced neuromorphic computing applications is a critical step in realizing electronic memory and synaptic devices that can efficiently emulate biological synaptic ***,the assessment of monochalcogenide materials for the fabrication of highly scalable memory and electronic synaptic devices that can accurately mimic synaptic functions remain *** the present study,we investigated the thickness-dependent resistive switching(RS)behavior of conductive bridge random access memory(CBRAM)based on a monochalcogenide GeSe switching medium for its possible application in high-performance memory and electronic *** thin films of different thicknesses(6,13,24,35,47,and 56 nm)were deposited via sputtering to fabricate CBRAM devices with a stacking sequence of Ag/GeSe/Pt/Ti/SiO_(2).The devices exhibited compliance current(CC)-free and electroforming-free RS with highly stable endurance and retention characteristics with no major *** devices with a thickness of 6 nm had a low-resistance state(LRS),which required an initial reset to ensure reliable switching *** devices with a thickness of 47 nm and above exhibited the co-existence of unipolar resistive switching(U-RS)and bipolar resistive switching(B-RS)with the CC-controlled transition between the two switching *** resistance states in the 24-nm device between a high-resistance state(HRS)and an LRS were achieved by controlling the set-CC(from 5 mA to CC-free)and the reset stop voltage(from–0.5 to–1.0 V)during the set and reset processes,*** analog RS behavior of the device was further investigated with appropriate pulse measurements to emulate vital synaptic functions,including long-term potentiation(LTP),long-term depression(LTD),spike-rate-dependent plasticity(SRDP),spike-timing-dependent plasticity(STDP),paired-pulse facilitation(PPF),paired-pulse depression(PPD)and

关键词： conductive bridge random access memory(CBRAM) resistive memory switching monochalcogenide material bipolar and unipolar resistive switching multilevel resistive switching electronic synapses

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Exploring the experimental study and density functional theory calculations of symmetric and asymmetric chalcogen atoms interacted molybdenum dichalcogenides for lithium-ion batteries

引用

Journal of Materials Science & Technology 2023年第31期162卷 44-56页

作者： Dhanasekaran Vikraman Sajjad Hussain Zeesham Abbas K.Karuppasamy Woo-Seok Kang P.Santhoshkumar A.Kathalingam jongwan jung Hyun-Seok Kim Division of Electronics and Electrical Engineering Dongguk University-SeoulSeoul 04620Republic of Korea Department of Nanotechnology and Advanced Materials Engineering Sejong UniversitySeoul 05006Republic of Korea Hybrid Materials Center(HMC) Sejong UniversitySeoul 05006Republic of Korea Millimeter-wave Innovation Technology(MINT)Research Center Dongguk University-SeoulSeoul 04620Republic of Korea

Two-dimensional asymmetric chalcogen atoms attached to Janus nanoparticles have fascinated research attention owing to their distinctive properties and characteristics for various *** paper proposed a facile synthesis to produce efficient molybdenum-based symmetric and asymmetric chalcogens bounded by X Mo X and TeMo X ***,the fabricated X Mo X and TeMo X nanostruc-tures were employed as anodes for lithiumion batteries(LIBs).Assembled LIBs using TeMoS and TeMoSe Janus anodes achieved 2610 and 2073 mAh g^(-1)reversible capacity at 0.1 A g^(-1),respectively for the halfcell configuration,which is outstanding performance compared with previous *** rate capability performances at 0.1-20 A g^(-1)and exceptional cycling solidity confirmed high charge and discharge capacities for TeMo X Janus lithium-ion battery *** addition,the full cell device with TeMoS//LiCoO_(2)configuration explored the discharge capacity of 1605 mAh g^(-1)at 0.1 A g^(-1)which suggests their excellent electrochemical *** density functional theory approximations established the significance of assembled symmetric and asymmetric chalcogen atoms interacted with X Mo X and TeMo X anode materials for ***,the present investigation supports a new approach to creating two-dimensional materials based on asymmetric chalcogen atoms with core metal to effectively increase desirable energy storage characteristics.

关键词： TeMoS TeMoSe Janus Li-ion battery

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Unveiling the redox electrochemistry of 1D,urchin-like vanadium sulfide electrodes for high-performance hybrid supercapacitors

引用

Journal of Energy Chemistry 2023年第4期79卷 569-580页

作者： K.Karuppasamy Dhanasekaran Vikraman Sajjad Hussain Balamurugan Thirumalraj P.Santhoshkumar Hemalatha Parangusan Hyun-Chang Park jongwan jung Hyun-Seok Kim Division of Electronics and Electrical Engineering Dongguk University-SeoulSeoul 04620Republic of Korea Department of Nanotechnology and Advanced Materials Engineering Sejong UniversitySeoul 05006Republic of Korea School of Materials Science&Engineering Kookmin UniversitySeoul 02707Republic of Korea Millimeter-Wave Innovation Technology Research Center(MINT) Dongguk University-SeoulSeoul 04620Republic of Korea Qatar University Young Scientist Center(QUYSC) Qatar UniversityP.O.Box 2713DohaQatar

Exploring novel versatile electrode materials with outstanding electrochemical performance is the key to the development of advanced energy conversion and storage *** this work,we aim to construct new-fangled one-dimensional(1D)quasi-layered patronite vanadium tetrasulfide(VS_(4))nanostructures by using different sulfur sources,namely thiourea,thioacetamide,and L-cysteine through an ethyleneaminetetraacetic-acid(EDTA)-mediated solvothermal *** as-prepared VS4exhibits several unique morphologies such as urchin,fluffy nanoflower,and polyhedron with appropriate surface *** the prepared nanostructures,the VS_(4)-1@NF nanostructure exhibited excellent electrochemical properties in 6 M KOH solution,and we explored its redox electrochemistry in *** asprepared VS_(4)-1@NF electrode exhibited battery-type redox characteristics with the highest capacity of280 C g^(-1)in a three-electrode ***,it offered a capacity of 123 F g^(-1)in a hybrid twoelectrode set-up at 1 A g^(-1)with the highest specific energy and specific power of 38.5 W h kg^(-1)and750 W kg^(-1),***,to ensure the practical applicability and real-world performance of the prepared hybrid AC@NF//VS_(4)-1@NF cell,we performed a cycling stability test with more than 5,000galvanostatic charge–discharge cycles at 2 A g^(-1),and the cell retained around 84.7%of its capacitance even after 5,000 cycles with a CE of 96.1%.

关键词： Patronite Redox electrochemistry Urchin VS_(4) 1D material Mesoporous

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：