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Recent progress on the long-term stability of hydrogen evolution reaction electrocatalysts

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InfoMat 2022年第9期4卷 17-59页

作者： Wenfang Zhai Yuanyuan Ma Dong chen johnny c.ho Zhengfei Dai Yongquan Qu Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology School of Chemistry and Chemical EngineeringNorthwestern Polytechnical UniversityXi'anChina State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong UniversityXi'anChina Department of Materials Science and Engineering City University of Hong KongHong KongChina Shenzhen Research Institute City University of Hong KongShenzhenChina

Developing new methodologies to produce clean and renewable energy resources is pivotal for carbon-neutral ***(H2)is considered as an ideal energy resource due to its nontoxic,pollution-free,high utilization rate,and high calorific combustion *** of water driven by the electricity generated from renewable and clean energy sources(e.g.,solar energy,wind energy)to produce hydrogen attracts great efforts for hydrogen production with high ***,the breakthrough of the catalyst activity limit for the hydrogen evolution reaction(HER)catalysts has received extensive ***,fewer reviews have focused on the long-term stability of HER catalysts,which is indeed decisive for large-scale electrolytic ***,a systematic summary concentrated on the durability of HER electrocatalysts would provide a fundamental understanding of the electrocatalytic performance for practical applications and offer new opportunities for the rational design of the highly performed HER *** review summarizes the research progress toward the HER stability of precious metals,transition metals,and metal-free electrocatalysts in the past few *** discusses the challenges in the stability of HER electrocatalysts and the future *** anticipate that it would provide a valuable basis for designing robust HER electrocatalysts.

关键词： electrocatalysis heterogeneous catalysts hydrogen evolution reaction stability water splitting

Self-assembling nacre-like high-strength and extremely tough polymer composites with new toughening mechanism

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Journal of Materials Science & Technology 2023年第5期136卷 236-244页

作者： Yu Bu Xu Wang Xiuming Bu Zhengyi Mao Zhou chen Zebiao Li Fengqian Hao johnny c.ho Jian Lu cityU-Shenzhen Futian Research Institute Shenzhen 518045China centre for Advanced Structural Materials City University of Hong Kong Shenzhen Research InstituteGreater Bay Joint DivisionShenyang National Laboratory for Materials Science8 Yuexing 1st RoadShenzhen Hi-Tech Industrial ParkNanshan DistrictShenzhen 518000China MOE Key Laboratory of Impact and Safety Engineering Ningbo UniversityNingbo 315211China Department of Materials Science and Engineering City University of Hong KongHong Kong SAR 999077China Department of Mechanical Engineering City University of Hong KongHong Kong SAR 999077China

Achieving high strength,deformability and toughness in polymers is important for practical industrial *** has remained challenging because of the mutually opposing effects of improvements to each of these ***,a self-assembling nacre-like polymer composite is designed to achieve ex-tremely tough with increasing *** special design significantly improved polymer’s mechanical properties,including an ultra-high fracture strain of 1180%,a tensile strength of 55.4 MPa and a toughness of 506.9 MJ/m^(3),which far exceed the highest values previously reported for polymer *** ex-cellent combination of properties can be attributed to a novel toughening mechanism,achieved by the synergy of the domain-limiting effect of metallic glass fragments with the strain-gradient-induced orien-tation and crystallisation within the polymer during *** approach opens a promising avenue for designing robust polymer materials in armour and aerospace engineering for a range of innovative applications.

关键词： Polymer composites Metallic glass thin film Toughness Toughening mechanism Nacre-like fracture

Direct drop-casting synthesis of all-inorganic lead and lead-free halide perovskite microcrystals for high-performance photodetectors

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Nano Research 2022年第4期15卷 3621-3627页

作者： Zhengxun Lai You Meng Fei Wang Xiuming Bu Wei Wang Pengshan Xie Weijun Wang chuntai Liu SenPo Yip johnny c.ho Department of Materials Science and Engineering City University of Hong KongKowloonHong Kong 999077China State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130021China State Key Laboratory of Terahertz and Millimeter Waves City University of Hong KongKowloonHong Kong 999077China Key Laboratory of Advanced Materials Processing&Mold(Zhengzhou University) Ministry of EducationZhengzhou 450002China Institute for Materials chemistry and Engineering Kyushu UniversityFukuoka 816–8580Japan

Due to the exciting photoelectric properties,better stability,and environmental-friendly nature,all-inorganic halide perovskites(AIHPs),especially the lead-free perovskites,have attracted worldwide ***,the film quality of AIHPs fabricated by typical spin-coating and subsequent high-temperature annealing is still not satisfactory,restricting their further ***,we demonstrate a simple low-temperature solution-processed drop-casting method to achieve highly-crystalline cubic csPbBr_(3)and lead-free layer-structured cs_(3)Sb_(2)I_(9)microcrystals(Mcs).This drop-casting technique not only consumes the less amount of precursor solution but also eliminates the high-temperature annealing as compared with those of spin *** these Mcs are configured into photodetectors,they exhibit superior device performance,which is in distinct contrast to the one of spin-coated ***,the responsivity of csPbBr_(3)Mcs is found to be as large as 8,990 mA/W,being 13 times larger than the spin-coated films and even better than many state-of-the-art solution-processed AIHPs *** device performance enhancement is attributed to the better film quality and phase purity obtained by the drop-casting *** these results can evidently fill the“technology gap”for further enhancing the material quality of solution-processed AIHPs and breaking down the barriers that hinder the development of AIHPs based optoelectronic devices.

关键词： halide perovskite drop-casting photodetector csPbBr_(3) cs_(3)Sb_(2)I_(9)

Hybrid c8-BTBT/In GaAs nanowire heterojunction for artificial photosynaptic transistors

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Journal of Semiconductors 2022年第11期43卷 9-21页

作者： Yiling Nie Pengshan Xie Xu chen chenxing Jin Wanrong Liu Xiaofang Shi Yunchao Xu Yongyi Peng johnny c.ho Jia Sun Junliang Yang Hunan Key Laboratory for Super Microstructure and Ultrafast Process School of Physics and ElectronicsCentral South UniversityChangsha 410083China Department of Materials Science and Engineering City University of Hong KongKowloon 999077Hong Kong SARChina State Key Laboratory of Terahertz and Millimeter Waves City University of Hong KongKowloon 999077Hong Kong SARChina Key Laboratory of Advanced Materials Processing&Mold(Zhengzhou University) Ministry of EducationZhengzhou 450002China

The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic ***,a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene(c8-BTBT)and indium gallium arsenide(InGaAs)nanowires(NWs)hybrid heterojunction thin film as the active *** illumination,the Type-I c8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to *** persistent photoconductivity caused by charge trapping can then be used to mimic photosynaptic behaviors,including excitatory postsynaptic current,long/short-term memory and Pavlovian ***,a high classification accuracy of 89.72%can be achieved through the single-layer-perceptron hardware-based neural network built from c8-BTBT/InGaAs NWs synaptic ***,this work could provide new insights into the fabrication of high-performance optoelectronic synaptic devices.

关键词： photonic synaptic transistor c8-BTBT InGaAs heterojunction

High-performance photodetectors based on two-dimensional perovskite crystals with alternating interlayer cations

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Journal of Materiomics 2023年第4期9卷 817-823页

作者： Yezhan Li Zhengxun Lai You Meng Wei Wang Yuxuan Zhang Xuwen Zhao Di Yin Weijun Wang Pengshan Xie Quan Quan SenPo Yip johnny c.ho Department of Materials Science and Engineering City University of Hong Kong999077Hong Kong SARChina Institute for Materials chemistry and Engineering Kyushu UniversityFukuoka816-8580Japan State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong999077Hong Kong SARChina

Organic-inorganic halide perovskite,as a low-cost,solution-processable material with remarkable optoelectronic properties,is ideal candidate to fabricate high-performance photodetectors and is expected to significantly reduce device *** to the common Dion-Jacobson and Ruddlesden-Popper two-dimensional(2D)layered hybrid perovskite compounds,the perovskites with alternating cations in the interlayer(AcI)phase show higher crystal symmetry and narrower optical bandgaps,which exhibit great potential for excellent photodetection ***,we report a high-performance photodetector based on the 2D bilayered hybrid lead halide perovskite single crystal with the AcI phase(GAMA_(2)Pb_(2)I_(7);GA=c(NH_(2))_(3)and MA=cH_(3)NH_(3)).The single-crystal photodetector exhibits high photoresponsivity of 1.56,2.54,and 2.60 A/W for incident light wavelengths of 405,532,and 635 nm under 9.82 nW,respectively,together with the correspondingly high detectivity values of 1.86×10^(12),3.04×10^(12),and 3.11×10^(12)Jones under the same operating ***,a high-resolution imaging sensor is built based on the GAMA_(2)Pb_(2)I_(7)single-crystal photodetector,confirming the high stability and photosensitivity of the imaging *** results show that the 2D hybrid lead halide perovskites with alternating interlayer cations are promising for high-performance visible light photodetectors and imaging systems.

关键词： Photodetector Two-dimensional Hybrid perovskite Alternating interlayer cation Imaging

Is platinum a suitable counter electrode material for electrochemical hydrogen evolution reaction?

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Science Bulletin 2017年第14期62卷 971-973页

作者： Renjie Wei Ming Fang Guofa Dong johnny c.ho Department of Physics and Materials Science City University of Hong Kong Shenzhen Research Institute City University of Hong Kong State Key Laboratory of Millimeter Waves City University of Hong Kong

To date,due to the excellent electrochemical inertness,superb electrical conductivity and good mechanical stability in both aqueous and nonaqueous solutions,platinum(Pt)has been widely employed as counter electrode material in three-electrode setups to perform electroanalytical ***,recent reports have revealed that the use of Pt based counter electrodes

关键词：电化学稳定性电极材料析氢反应铂机械稳定性电分析化学电化学溶解工作电极

The origin of gate bias stress instability and hysteresis in monolayer WS2 transistors

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Nano Research 2020年第12期13卷 3278-3285页

作者： changyong Lan Xiaolin Kang You Meng Renjie Wei Xiuming Bu SenPo Yip johnny c.ho State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu610054China Department of Materials Science and Engineering City University of Hong KongKowloonHong Kong999077China State Key Laboratory of Terahertz and Millimeter Waves City University of Hong KongKowloonHong Kong999077China Key Laboratory of Advanced Materials Processing&Mold of Ministry of Education Zhengzhou UniversityZhengzhou450002China

Due to the ultra-thin nature and moderate carrier mobility,semiconducting two-dimensional(2D)materials have attracted extensive attention for next-generation ***,the gate bias stress instability and hysteresis are always observed in these 2D materials-based transistors that significantly degrade their reliability for practical ***,the origin of gate bias stress instability and hysteresis for chemical vapor deposited monolayer WS2 transistors are investigated *** transistor performance is found to be strongly affected by the gate bias stress time,sweeping rate and range,and *** on the systematical study and complementary analysis,charge trapping is determined to be the major contribution for these observed ***,due to these charge trapping effects,the channel current is observed to decrease with time;hence,a rate equation,considering the charge trapping and time decay effect of current,is proposed and developed to model the phenomena with excellent consistency with experimental *** these results do not only indicate the validity of the charge trapping model,but also confirm the hysteresis being indeed caused by charge ***,this simple model provides a sufficient explanation for the charge trapping induced gate bias stress instability and hysteresis in monolayer WS2 transistors,which can be also applicable to other kinds of transistors.

关键词： charge trapping gate bias stress instability hysteresis WS2 transistor

High elasticity of csPbBr_(3) perovskite nanowires for flexible electronics

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Nano Research 2021年第11期14卷 4033-4037页

作者： Xiaocui Li You Meng Rong Fan Sufeng Fan chaoqun Dang Xiaobin Feng johnny c.ho Yang Lu Department of Mechanical Engineering City University of Hong KongHong Kong999077China Department of Materials Science and Engineering City University of Hong KongHong Kong999077China School of Automotive Engineering Dalian University of TechnologyDalian116024China Nano-Manufacturing Laboratory(NML) Shenzhen Research Institute of City University of Hong KongShenzhen518057China

Due to the enhanced ambient structural stability and excellent optoelectronic properties, all-inorganic metal halide perovskite nanowires have become one of the most attractive candidates for flexible electronics, photovoltaics and optoelectronics. Their elastic property and mechanical robustness become the key factors for device applications under realistic service conditions with various mechanical loadings. Here, we demonstrate that high tensile elastic strain (∼ 4% to ∼ 5.1%) can be achieved in vapor-liquid-solid-grown single-crystalline csPbBr_(3) nanowires through in situ scanning electron microscope (SEM) buckling experiments. Such high flexural elasticity can be attributed to the structural defect-scarce, smooth surface, single-crystallinity and nanomechanical size effect of csPbBr_(3) nanowires. The mechanical reliability of csPbBr_(3) nanowire-based flexible photodetectors was examined by cyclic bending tests, with no noticeable performance deterioration observed after 5,000 cycles. The above results suggest great application potential for using all-inorganic perovskite nanowires in flexible electronics and energy harvesting systems.

关键词： perovskite nanowire csPbBr_(3) nanomechanics in situ testing elasticity flexible electronics

Design and fabrication of 1-D semiconductor nanomaterials for high-performance photovoltaics

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Science Bulletin 2016年第5期61卷 357-367页

作者： Ning Han Zaixing Yang Lifan Shen Hao Lin Ying Wang Edwin Y.B.Pun Yunfa chen johnny c.ho State Key Laboratory of Multiphase complex Systems Institute of Process Engineering Chinese Academy of SciencesBeijing 100190 China cAS center for Excellence in Urban Atmospheric Environment Xiamen 361021 China Department of Physics and Materials Science City University of Hong Kong Hong Kong China State Key Laboratory of Millimeter Waves City University of Hong Kong Hong Kong China Shenzhen Research Institute City University of Hong KongShenzhen 518057 China Department of Electronic Engineering City University of Hong Kong Hong Kong China

To date, the cost-effective utilization of solar energy by photovoltaics for large-scale deployment remains challenging. Further cost minimization and efficiency maximization, through reduction of material consumption, simplification of device fabrication as well as optimization of device structure and geometry, are required. The usage of 1D nanomaterials is attractive due to the outstanding light coupling effect, the ease of fabrication, and integration with one-dimensional(1-D) semiconductor materials. The light absorption efficiency can be enhanced significantly, and the corresponding light-toelectricity conversion efficiency can be as high as their bulk counterparts. Also, the amount of active materials used can be reduced. This review summarizes the recent development of 1-D nanomaterials for photovoltaic applications, including the anti-reflection, the light absorption,the minority diffusion, and the semiconductor junction properties. With solid progress and prospect shown in the past 10 years, 1-D semiconductor nanomaterials are attractive and promising for the realization of high-efficiency and low-cost solar cells.

关键词：一维纳米材料半导体纳米材料光电器件光伏太阳能性能设备制造成本最小化半导体材料