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GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

Nano Research 2014年第4期7卷 473-490页

作者： Jessica Bolinsson Martin Ek johanna tragardh Kilian Mergenthaler Daniel Jacobsson Mats-Erik Pistol Lars Samuelson Anders Gustafsson Solid State Physics and the Nanometer Structure Consortium Lund University Box 118 SE-221 00 Lund Sweden Polymer and Materials Chemistry Lund University Box 124 SE-221 00 Lund Sweden

In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence （CL） in a scanning electron microscope （SEM）. We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy （TEM）. In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.

关键词： GaAs/AlGaAs core shellnanowires metalorganic vapourphase epitaxy (MOVPE) cathodoluminescence twin defects transmission electronmicroscopy

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Valence Band Splitting in Wurtzite InP Nanowires Observed by Photoluminescence and Photoluminescence Excitation Spectroscopy

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Nano Research 2011年第2期4卷 159-163页

作者： Gerben L. Tuin Magnus T. Borgstrom johanna tragardh Martin Ek L. Reine Wallenberg Lars Samuelson Mats-Erik Pistol Solid State Physics/Nanometer Structure Consortium Box 118 Lund University S-221 00 Lund Sweden Polymer ＆ Materials Chemistry/nCHREM Lund University S-22100 Lurid Sweden

We have investigated individual bulk-like wires of wurtzite InP using photoluminescence, photoluminescence excitation spectroscopy and transmission electron microscopy. Using two different methods we find that the top of the valence band is split, as expected theoretically. This splitting of the valence band is peculiar to wurtzite InP and does not occur in zinc blende InP. We find the energy difference between the two bands to be 40 meV.

关键词： wurtzite InP photoluminescence excitation spectroscopy valence band structure

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