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低压下用CO+H_2气体制备人造金刚石的相图计算

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无机材料学报 1997年第3期12卷 331-335页

作者：张卫万永中王季陶复旦大学电子工程系上海200433

用非平衡热力学耦合模型计算了低压下由CO＋H2气体制备人造金刚石的相图．这些相图与经典的平衡热力学理论计算的相图不同，都有一个金刚石生长区．金刚石生长区的存在是实现用CO＋H2气体制备人造金刚石的热力学基础．本文认为相图中的... 详细信息

用非平衡热力学耦合模型计算了低压下由CO＋H2气体制备人造金刚石的相图．这些相图与经典的平衡热力学理论计算的相图不同，都有一个金刚石生长区．金刚石生长区的存在是实现用CO＋H2气体制备人造金刚石的热力学基础．本文认为相图中的金刚石生长区是体系中超平衡氢原子和超平衡氧原子对金刚石相和石墨相不同作用的结果．不同压力下相图中金刚石生长区的范围稍有不同，压力降低时，金刚石生长区将向低CO浓度的方向移动．本文还将计算的结果与报道的实验结果进行了对比分析，两者基本相符．

关键词：相图化学气相淀积低压人造金刚石氧化碳氢

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跳频系统中电荷泵锁相环的事件驱动仿真

系统工程与电子技术 2003年第8期25卷 925-927,945页

作者：苏彦锋王涛衣晓峰洪志良复旦大学微电子学系上海200433

为了快速仿真单片集成跳频系统中的电荷泵锁相环 ,在比较几种常见仿真方法的基础上 ,重点介绍了电荷泵锁相环的事件驱动模型 ,并针对这种模型的具体实现提出了一些改进。改进后的模型主要应用于跳频系统中频率合成锁相环的稳定性和建立... 详细信息

为了快速仿真单片集成跳频系统中的电荷泵锁相环 ,在比较几种常见仿真方法的基础上 ,重点介绍了电荷泵锁相环的事件驱动模型 ,并针对这种模型的具体实现提出了一些改进。改进后的模型主要应用于跳频系统中频率合成锁相环的稳定性和建立时间的快速仿真。

关键词：电荷泵锁相环跳频系统事件驱动行为级仿真

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The study of lithographic variation in resistive random access memory

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Journal of Semiconductors 2024年第5期45卷 69-79页

作者： Yuhang Zhang Guanghui He Feng Zhang Yongfu Li Guoxing wang department of Micro-Nano Electronics Shanghai Jiao Tong UniversityShanghai 200240China MoE Key Lab of Artificial Intelligence Shanghai Jiao Tong UniversityShanghai 200240China Institute of microelectronics Chinese Academy of SciencesBeijing 100029China

Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM *** this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically *** results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography *** read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area *** such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.

关键词： layout lithography process variation resistive random access memory

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Two-dimensional materials for future information technology: status and prospects

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Science china(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong wang Hao wang Haomin wang Jialong wang Junyong wang Wenhui wang Xingjun wang Yeliang wang Yuwei wang Zhenyu wang Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

Memristive switching in the surface of a charge-density-wave topological semimetal

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Science Bulletin 2024年第13期69卷 2042-2049页

作者： Jianwen Ma Xianghao Meng Binhua Zhang Yuxiang wang Yicheng Mou Wenting Lin Yannan Dai Luqiu Chen Haonan wang Haoqi Wu Jiaming Gu Jiayu wang Yuhan Du Chunsen Liu Wu Shi Zhenzhong Yang Bobo Tian Lin Miao Peng Zhou Chun-Gang Duan Changsong Xu Xiang Yuan Cheng Zhang State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200241China Key Laboratory of Computational Physical Sciences(Ministry of Education) Institute of Computational Physical SciencesState Key Laboratory of Surface PhysicsDepartment of PhysicsFudan UniversityShanghai 200433China shanghai Qi Zhi Institute Shanghai 200030China School of Physics Southeast UniversityNanjing 211189China Key Laboratory of Polar Materials and Devices(Ministry of Education) Department of ElectronicsEast China Normal UniversityShanghai 200241China shanghai Center of Brain–inspired Intelligent Materials and Devices East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Frontier Institute of Chip and System Fudan UniversityShanghai 200433China Zhangjiang fudan International Innovation Center Fudan UniversityShanghai 201210China School of Physics and Electronic Science East China Normal UniversityShanghai 200241China

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum *** ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic ***,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free *** this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))*** find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface *** the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal *** employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention *** origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band *** emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.

关键词： Topological semimetal Schottky barrier Surface ferroelectricity Memristor

Recent Advances in Electrochemical-Based Silicon Production Technologies with Reduced Carbon Emission

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Research 2024年第1期2023卷 209-236页

作者： Feng Tian Zhongya Pang Shen Hu Xueqiang Zhang Fei wang Wei Nie Xuewen Xia Guangshi Li Hsien-Yi Hsu Qian Xu Xingli Zou Li Ji Xionggang Lu State Key Laboratory of Advanced Special Steel&shanghai Key Laboratory of Advanced Ferrometallurgy&School of Materials Science and Engineering Shanghai University99#Shangda RoadShanghai 200444China Center for Hydrogen Metallurgy Technology Shanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System School of MicroelectronicsFudan University220#Handan RoadShanghai 200433China School of Energy and Environment Department of Materials Science and EngineeringCity University of Hong KongKowloon TongHong KongChina

Sustainable and low-carbon-emission silicon production is currently one of the main focuses for the metallurgical and materials science ***,considered a promising strategy,has been explored to produce silicon due to prominent advantages:(a)high electricity utilization efficiency;(b)low-cost silica as a raw material;and(c)tunable morphologies and structures,including films,nanowires,and *** review begins with a summary of early research on the extraction of silicon by *** has been placed on the electro-deoxidation and dissolution–electrodeposition of silica in chloride molten salts since the 21st century,including the basic reaction mechanisms,the fabrication of photoactive Si films for solar cells,the design and production of nanoSi and various silicon components for energy conversion,as well as storage ***,the feasibility of silicon electrodeposition in room-temperature ionic liquids and its unique opportunities are *** this basis,the challenges and future research directions for silicon electrochemical production strategies are proposed and discussed,which are essential to achieve large-scale sustainable production of silicon by electrochemistry.

关键词： directions electrodeposition electricity

One-year status of hepatic venous pressure gradient measurement from 85 hospitals in china

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Portal Hypertension & Cirrhosis 2024年第2期3卷 116-123页

作者： jitao wang Ting Cui Linpeng Zhang Zhiping Yan Lei Li Jinjun Chen Junhui Sun Hua Xiang He Zhu Hao Wu Jiancuo Gengzang Feng Zhang Wei Wu Guohong Cao Wuhua Guo Haibin Shi Hui Xue Guangjun Huang Qiang Yu Meng Niu Huiling Xiang Derun Kong Wei Gou Xuefeng Luo Fuliang He Min Yuan Wei Liu Yong wang Hongjie Hu Xiaoli Zhu Tao Yu Qinxue Sun Wei Qu Ting Lu Deqiang Ma Li Zhang Jun Ma Jun Yang Ketao Mu Xiaoliang Zhu Kai Xiong Huiguo Ding Shengjuan Yao Mingsheng Huang Fang wang Zexin wang Yong Huang Jianan Li Hongfeng Yi Birun Huang Zhongwei Zhao Duiping Feng Yanming Lei Changlong Hou Wenbo Guo Shirong Liu Gaojun Teng Kangshun Zhu Fan Wu Xiaogang Hu Wenfeng Zhang Shaoqi Yang Zhouchao Hu Pengfei Pang Shaowu Zhuang Weidong wang Qingliang Zhu Kunpeng Zhang Chengyu Liu Dongliang Li Chao Ma Hong Jiang Xingong Zhao Weixin Ren Zhiwei wang Lei Yu Fuhuang Lin Chaoguang Yan Feng wang Lei Yu Hui Huan Wenyong Shen Shaofei He Chengda Zhang Jinlun Bao Jiangtao Liu Jun Wu Jianbo Zhao Jian Zhang Xiaolong Qi Hebei Provincial Key Laboratory of Cirrhosis&Portal Hypertension Xingtai People's HospitalXingtaiHebeiChina Center of Portal Hypertension Department of RadiologyZhongda HospitalSchool of MedicineSoutheast UniversityNanjingJiangsuChina department of Interventional Therapy Beijing Shijitan Hospital Affiliated to Capital Medical UniversityBeijingChina department of Intervention Taiyuan Third People's HospitalTaiyuanShanxiChina department of Intervention Zhongshan Hospital Affiliated to Fudan UniversityShanghaiChina department of Interventional Medicine The First Hospital of Lanzhou UniversityLanzhouGansuChina department of Infectious Diseases Nanfang Hospital of Southern Medical UniversityGuangzhouGuangdongChina Hepatobiliary and Pancreatic Intervention Center The First Affiliated Hospital of Zhejiang University School of MedicineHangzhouZhejiangChina Interventional Vascular Surgery Hunan Provincial People's HospitalChangshaHunanChina department of Intervention Sixth People's Hospital of ShenyangShenyangLiaoningChina department of Gastroenterology West China Hospital of Sichuan UniversityChengduSichuanChina department of Intervention The Fourth People's Hospital of Qinghai ProvinceXiningQinghaiChina department of Gastroenterology Nanjing Drum Tower HospitalNanjingJiangsuChina department of Gastroenterology The First Affiliated Hospital of Wenzhou Medical UniversityWenzhouZhejiangChina department of Radiology Shulan(Hangzhou)HospitalHangzhouZhejiangChina department of Intervention Mengchao Hepatobiliary Hospital of Fujian Medical UniversityFuzhouFujianChina department of Interventional Radiology The First Affiliated Hospital of Nanjing Medical UniversityNanjingJiangsuChina department of Gastroenterology The First Affiliated Hospital of Xi'an Jiaotong UniversityXi'anShaanxiChina department of Gastroenterology Shandong Provincial Hospital Affiliated to Shandong First Medical UniversityJinanShandongChina department of Interventional Radiology Fifth Medical Center

Aims:Surveys and research on the applications of the hepatic venous pressure gradient(HVPG)are important for understanding the current status and future development of this technology in *** article aimed to investigate the status of hepatic venous pressure gradient measurement in china in ***:We investigated the overall status of HVPG technology in china-including hospital distribution,hospital level,annual number of cases,catheters used,average cost,indications,and current challenges by using online *** counting the number and percentages of cases of these results,we hope to clarify the current status of HVPG measurements in ***:According to the survey,85 hospitals in china used HVPG technology in 2022 distributed across 29 provinces.A total of 4989 HVPG measurements were performed in all of the surveyed hospitals in 2022,of which 2813 cases(56.4%)were measured *** average cost of HVPG measurement was 5646.8±2327.9 *** the clinical teams who performed the measurements(sometimes multiple per hospital),94.3%(82/87)used the balloon method,and the majority of the teams(72.4%,63/87)used embolectomy ***:This survey clarified the clinical application status of HVPG in china and confirmed that some medical institutions in china have established a foundation for this *** is still necessary to continue promoting and popularizing this technology in the future.

关键词： application status hepatic vein pressure gradient questionnaire survey

Nationwide survey analysis of esophagogastric varices in portal hypertension based on endoscopic management in china

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Portal Hypertension & Cirrhosis 2024年第3期3卷 129-138页

作者： Xing wang Bing Hu Yiling Li Weichun Lin Zhijie Feng Yanjing Gao Zhining Fan Feng Ji Bingrong Liu Jinhai wang Wenhui Zhang Tong Dang Hong Xu Derun Kong Lili Yuan Liangbi Xu Shengjuan Hu Liangzhi Wen Ping Yao Yunxiao Liang Xiaodong Zhou Huiling Xiang Xiaowei Liu Xiaoquan Huang Yinglei Miao Xiaoliang Zhu De‐An Tian Feihu Bai jitao Song Ligang Chen Yangzhen Bian Ba Yingcai Ma Yifei Huang Bin Wu Xiaolong Qi CHESS‐Endoscopyconsortium department of Gastroenterology The Third Affiliated Hospital of Sun Yat‐sen UniversityGuangzhouGuangdongChina Guangdong Province Engineering and Technology Research Center of Digestive Endoscopy GuangzhouGuangdongChina department of Gastroenterology and Hepatology West China Hospital of Sichuan UniversityChengduSichuanChina department of Gastroenterology The First Affiliated Hospital of China Medical UniversityShenyangLiaoningChina department of Gastroenterology The Second Hospital of Hebei Medical UniversityShijiazhuangHebeiChina department of Gastroenterology Qilu Hospital of Shandong UniversityJinanShandongChina department of Digestive Endoscopy The First Affiliated Hospital of Nanjing Medical UniversityNanjingJiangsuChina department of Gastroenterology The First Affiliated Hospital of Zhejiang UniversityHangzhouZhejiangChina department of Gastroenterology The First Affiliated Hospital of Zhengzhou UniversityZhengzhouHenanChina department of Gastroenterology The Second Affiliated Hospital of Xi'an Jiaotong UniversityXi'anShaanxiChina department of Gastroenterology Beijing Daxing District People's HospitalBeijingChina department of Gastroenterology The Second Affiliated Hospital of Baotou Medical CollegeBaotouInner MongoliaChina department of Gastroenterology The First Hospital of Jilin UniversityChangchunJilinChina department of Gastroenterology The First Affiliated Hospital of Anhui Medical UniversityHefeiAnhuiChina department of Digestive Endoscopy The Second Hospital of Shanxi Medical UniversityTaiyuanShanxiChina Digestive Endoscopy Center The Affiliated Hospital of Guizhou Medical UniversityGuiyangGuizhouChina department of Gastroenterology People's Hospital of Ningxia Hui Autonomous RegionNingxia Medical UniversityYinchuanNingxiaChina department of Gastroenterology Daping HospitalArmy Medical UniversityChongqingChina department of Gastroenterology The First Affiliated Hospital of Xinjiang Medical UniversityUrumqiXinjiangChina department of Gastroente

Aims:The endoscopic treatment of esophagogastric varices is challenging,and the nationwide application of endoscopic therapies for various types of esophagogastric varices and different clinical scenarios remains *** study investigated the use of endoscopic therapy for portal hypertension in ***:This study used a questionnaire survey initiated by the Liver Health Consortium in china to investigate the use of endoscopic therapies for portal *** were released online from January 30,2023 to February 28,2023 and filled out by chief physicians or senior instructors responsible for endoscopic therapies in participating hospitals across 31 provinces(autonomous regions and municipalities)in *** of guideline adherence between primary and referral medical centers were performed using the chi‐square test or Fisher's exact ***:In total,836 hospitals participated in the *** primary and secondary prophylaxis of esophagogastric variceal bleeding(EGVB),adherence to the national guidelines was 72.5%(606/836)and 39.2%(328/836),*** differences were observed in the rate of adherence between the primary and referral centers for primary(79.9%[111/139]vs.71.0%[495/697],p=0.033)and secondary prophylaxis(27.3%[38/139]vs.41.6%[290/697],p=0.002).Of the hospitals,78.2%(654/836)preferred endoscopic therapies for acute EGVB,and the timing of endoscopy was usually within 12 h(48.5%,317/654)and 12-24 h(36.9%,241/654)after *** therapy was more likely to be the first choice of treatment for acute EGVB in referral centers than in primary centers(82.6%[576/697]vs.56.1%[78/139],p<0.001).Regarding the management of gastroesophageal varices type 2 and isolated gastric varices type 1,the most prevalent procedures were cyanoacrylate injection combined with sclerotherapy(48.2%[403/836]and 29.9%[250/836],respectively);however,substantial hospitals preferred clip-assisted therapies(12.4%[104/836]and 2

关键词： endoscopy esophagogastric varices guideline adherence portal hypertension questionnaire survey

Large circuit models: opportunities and challenges

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Science china(Information Sciences) 2024年第10期67卷 25-66页

作者： Lei CHEN Yiqi CHEN Zhufei CHU Wenji FANG Tsung-Yi HO Ru HUANG Yu HUANG Sadaf KHAN Min LI Xingquan LI Yu LI Yun LIANG Jinwei LIU Yi LIU Yibo LIN Guojie LUO Hongyang PAN Zhengyuan SHI Guangyu SUN Dimitrios TSARAS Runsheng wang Ziyi wang Xinming WEI Zhiyao XIE Qiang XU Chenhao XUE Junchi YAN Jun YANG Bei YU Mingxuan YUAN Evangeline F.Y.YOUNG Xuan ZENG Haoyi ZHANG Zuodong ZHANG Yuxiang ZHAO Hui-Ling ZHEN Ziyang ZHENG Binwu ZHU Keren ZHU Sunan ZOU Huawei Noah’s Ark Lab School of Integrated Circuits Peking University Faculty of Electrical Engineering and Computer Science Ningbo University department of Electronic and Computer Engineering Hong Kong University of Science and Technology department of Computer Science and Engineering The Chinese University of Hong Kong School of Integrated Circuits Southeast University Huawei HiSilicon Peng Cheng Laboratory School of Computer Science Peking University School of microelectronics State Key Laboratory of Integrated Chips and System Fudan University School of Artificial Intelligence Shanghai Jiao Tong University

Within the electronic design automation(EDA) domain, artificial intelligence(AI)-driven solutions have emerged as formidable tools, yet they typically augment rather than redefine existing methodologies. These solutions often repurpose deep learning models from other domains, such as vision, text, and graph analytics, applying them to circuit design without tailoring to the unique complexities of electronic circuits. Such an “AI4EDA” approach falls short of achieving a holistic design synthesis and understanding,overlooking the intricate interplay of electrical, logical, and physical facets of circuit data. This study argues for a paradigm shift from AI4EDA towards AI-rooted EDA from the ground up, integrating AI at the core of the design process. Pivotal to this vision is the development of a multimodal circuit representation learning technique, poised to provide a comprehensive understanding by harmonizing and extracting insights from varied data sources, such as functional specifications, register-transfer level(RTL) designs, circuit netlists,and physical layouts. We champion the creation of large circuit models(LCMs) that are inherently multimodal, crafted to decode and express the rich semantics and structures of circuit data, thus fostering more resilient, efficient, and inventive design methodologies. Embracing this AI-rooted philosophy, we foresee a trajectory that transcends the current innovation plateau in EDA, igniting a profound “shift-left” in electronic design methodology. The envisioned advancements herald not just an evolution of existing EDA tools but a revolution, giving rise to novel instruments of design-tools that promise to radically enhance design productivity and inaugurate a new epoch where the optimization of circuit performance, power, and area(PPA) is achieved not incrementally, but through leaps that redefine the benchmarks of electronic systems' capabilities.

关键词： AI-rooted EDA large circuit models (LCMs) multimodal circuit representation learning circuit optimization