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Electrical and optical properties of hydrogen plasma treatedβ-Ga_(2)O_(3) thin films

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Journal of Semiconductors 2022年第9期43卷 74-80页

作者： Qian Jiang Junhua Meng Yiming Shi Zhigang Yin Jingren Chen Jing Zhang jinliang wu Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Information Science and Technology North China University of TechnologyBeijing 100144China Faculty of Science Beijing University of TechnologyBeijing 100124China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.

关键词： β-Ga_(2)O_(3)film hydrogen plasma treatment electrical properties scattering mechanisms defect

Epitaxial growth of large area ZrS_(2)2D semiconductor films on sapphire for optoelectronics

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Nano Research 2022年第7期15卷 6628-6635页

作者： Yan Tian Yong Cheng Jidong Huang Siyu Zhang Hao Dong Gaokai Wang Jingren Chen jinliang wu Zhigang Yin Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Recently,group-IVB semiconducting transition metal dichalcogenides(TMDs)of ZrS_(2) have attracted significant research interest due to its layered nature,moderate band gap,and extraordinary physical properties.Most device applications require a deposition of high quality large-area uniform ZrS_(2) single crystalline films,which has not yet been achieved.In this work,for the first time,we demonstrate the epitaxial growth of high quality large-area uniform ZrS_(2) films on c-plane sapphire substrates by chemical vapor deposition.An atomically sharp interface is observed due to the supercell matching between ZrS_(2) and sapphire,and their epitaxial relationship is found to be ZrS_(2)(0001)[1010]||Al_(2)O_(3)(0001)[1120].The epitaxial ZrS_(2) film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm^(2)·V^(−1)·s^(−1),and the optical phonon is the dominant scattering mechanism at room temperature or above.Furthermore,the optoelectronic applications of ZrS_(2) films are demonstrated by fabricating photodetector devices.The ZrS_(2) photodetectors exhibit the excellent comprehensive performance,such as a light on/off ratio of 106 and a specific detectivity of 2.6×10^(12) Jones,which are the highest values compared with the photodetectors based on other group-IVB two-dimensional TMDs.

关键词： ZrS_(2) epitaxial growth scattering mechanism photodetectors transition metal dichalcogenides

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中东M油田天然气系统腐蚀规律研究

化工管理 2024年第7期 140-143页

作者：吴锦亮中国海洋石油国际有限公司伊拉克公司北京100027

为明确中东M油田天然气系统腐蚀原因,利用气相色谱仪对天然气组分进行了分析,结果表明CO_(2)以及H_(2)S分压较低,对天然气系统发生CO_(2)腐蚀倾向低。同时,对天然气中生产水进行离子分析,研究其离子成分及腐蚀规律。离子分析结果表明,... 详细信息

为明确中东M油田天然气系统腐蚀原因,利用气相色谱仪对天然气组分进行了分析,结果表明CO_(2)以及H_(2)S分压较低,对天然气系统发生CO_(2)腐蚀倾向低。同时,对天然气中生产水进行离子分析,研究其离子成分及腐蚀规律。离子分析结果表明,天然气所携带生产水中Cl^(-)、HCO_(3)^(-)以及含盐量高是主要的腐蚀成因,并明确了对腐蚀速率的影响。利用专业软件对M油田天然气系统所夹带生产水在不同温度压力下的腐蚀速率进行了预测,通过降低天然气系统中生产水含量,可有效降低天然气系统腐蚀速率。

关键词：天然气系统腐蚀成因离子成分腐蚀规律

Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

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Fundamental Research 2021年第6期1卷 677-683页

作者： Gaokai Wang Jingren Chen Junhua Meng Zhigang Yin Ji Jiang Yan Tian Jingzhen Li jinliang wu Peng Jin Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Faculty of Science Beijing University of TechnologyBeijing 100124China

Recently,hexagonal boron nitride(h-BN),an ultra-wide bandgap semiconductor,has attracted considerable atten-tion owing to its excellent properties.In thin films grown on metal catalysts,contamination and damage induced by a transfer process cannot be avoided.Therefore,synthesizing h-BN films on non-catalytic dielectric substrates is desirable for electronic applications.In this study,we demonstrate the direct growth of high-quality h-BN films with a controllable thickness on sapphire substrates by using the pulsed laser deposition(PLD)technique.The effects of the deposition conditions and laser parameters on the growth of the h-BN films are systematically investigated by evaluating their characteristic Raman peaks.Among the various growth parameters studied,the substrate temperature has the greatest influence on the crystalline quality of the h-BN films,and the optimal pres-sure varies depending on the target-substrate distance.The h-BN film grown under optimal conditions exhibits a narrow Raman line width of∼30 cm^(−1),indicating a high crystalline quality.The photodetectors fabricated from the PLD-grown h-BN films exhibit superior deep-ultraviolet detection performance with a large on/offratio of>104,high photoresponsivity,and a sharp cut-offwavelength of 220 nm.This study presents the possibility of producing high-quality h-BN films by applying PLD on dielectric substrates for optoelectronic applications.

关键词： Hexagonal boron nitride Pulsed laser deposition Raman spectroscopy Photodetectors

颈前路椎体次全切融合术中应用3D打印椎体与纳米羟基磷灰石/聚酰胺66椎体的早期临床疗效比较

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中华实验外科杂志 2024年第2期41卷 386-389页

作者：岳玺武金亮杨科荣宋瑞鹏谭洪宇郑州大学第一附属医院骨科郑州450052

目的探讨3D打印椎体与纳米羟基磷灰石/聚酰胺66(n-HA/PA66)椎体对颈前路椎体次全切融合术(ACCF)术后颈椎矢状面影响及早期临床疗效。方法收集2020年6月至2022年1月在郑州大学第一附属医院开展ACCF的患者共56例, 其中应用3D打印椎体(3D组... 详细信息

目的探讨3D打印椎体与纳米羟基磷灰石/聚酰胺66(n-HA/PA66)椎体对颈前路椎体次全切融合术(ACCF)术后颈椎矢状面影响及早期临床疗效。方法收集2020年6月至2022年1月在郑州大学第一附属医院开展ACCF的患者共56例, 其中应用3D打印椎体(3D组)28例, n-HA/PA66椎体(n-HA/PA66组)28例, 比较两组患者术前一般资料, 术后临床和影像学指标。结果 3D组术后3、6、12、18个月C2~7 Cobb高于n-HA/PA66组(19.42±3.20比17.71±2.50、18.71±3.15比17.04±1.94、18.49±3.13比16.86±2.17、18.32±2.89比16.40±1.48, t=-2.233、-2.385、-2.267、-3.121, P<0.05), 3D组术后3、6、12、18个月C2~7 SVA低于n-HA/PA66组(14.52±2.45比16.88±2.50、14.74±2.21比17.30±3.86、14.81±2.28比17.38±3.91、15.27±2.23比17.84±3.76, t=2.595、3.052、3.004、3.107, P<0.05), 3D组术后3、6、12、18个月T1倾斜角高于n-HA/PA66组(24.11±2.88比21.47±2.11、23.15±2.67比20.46±2.02、23.23±2.70比20.64±2.08、22.58±2.44比20.04±2.02, t=-3.912、-4.257、-4.011、-4.253, P<0.05), 3D组术后3个月融合率高于n-HA/PA66组[82.1%(46/56)比65.5%(36/56), χ^(2)=4.004, P<0.05], 3D组术后12、18个月下沉率低于n-HA/PA66组[5.4%(3/56)比21.4%(12/56)、7.1%(4/56)比25.0%(14/56), χ^(2)=6.235、6.619, P<0.05]。结论 3D打印椎体和n-HA/PA66椎体应用于ACCF都可取得良好的早期临床效果, 但3D打印椎体在椎体融合速度、维持生理曲度和减缓沉降方面更具优势。

关键词： 3D打印椎体临床疗效

Towards overcoming obstacles of type Ⅱ photodynamic therapy:Endogenous production of light,photosensitizer,and oxygen

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Acta Pharmaceutica Sinica B 2024年第3期14卷 1111-1131页

作者： Lin Yu Zhen Liu Wei Xu Kai Jin jinliang Liu Xiaohui Zhu Yong Zhang Yihan wu Department of Chemical and Environmental Engineering Shanghai UniversityShanghai 200433China School of Medicine Shanghai UniversityShanghai 200433China Department of Biomedical Engineering City University of Hong KongHong KongChina

Conventional photodynamic therapy(PDT)approaches face challenges including limited light penetration,low uptake of photosensitizers by tumors,and lack of oxygen in tumor microenvironments.One promising solution is to internally generate light,photosensitizers,and oxygen.This can be accomplished through endogenous production,such as using bioluminescence as an endogenous light source,synthesizing genetically encodable photosensitizers in situ,and modifying cells genetically to express catalase enzymes.Furthermore,these strategies have been reinforced by the recent rapid advancements in synthetic biology.In this review,we summarize and discuss the approaches to overcome PDT obstacles by means of endogenous production of excitation light,photosensitizers,and oxygen.We envision that as synthetic biology advances,genetically engineered cells could act as precise and targeted“living factories”to produce PDT components,leading to enhanced performance of PDT.

关键词： Photodynamic therapy Cancer Biogenesis Biosynthesis Engineered bacteria Phototherapy Photosensitizers Catalase

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眼科急诊预检分诊标准体系构建及初步验证

眼科学报 2024年第2期39卷 91-98页

作者：方晓敏肖惠明郑玲玲黄南祺吴劲良黄文敏刘荣娇姚抒予中山大学中山眼科中心眼病防治全国重点实验室广东省眼科视觉科学重点实验室广东省眼部疾病临床医学研究中心广州510060 广州医科大学附属第三医院广州510140

目的:基于我国国情构建科学、简便且高效的眼科急诊预检分诊标准,为眼科医护人员提供高效的眼科急诊预检分诊工具。方法:基于文献查询法、半结构访谈法、德尔菲法及层次分析法确定眼科急诊预检分诊标准内容。通过提取2023年8月1日—2023... 详细信息

目的:基于我国国情构建科学、简便且高效的眼科急诊预检分诊标准,为眼科医护人员提供高效的眼科急诊预检分诊工具。方法:基于文献查询法、半结构访谈法、德尔菲法及层次分析法确定眼科急诊预检分诊标准内容。通过提取2023年8月1日—2023年8月10日急诊分诊系统及HIMSS电子病历系统数据,分析初次分诊的级别与接诊医生最终诊断的所属级别符合率,对眼科急诊预检分诊标准体系的应用效果进行初步验证。结果:对18名专家进行2轮专家咨询,有效问卷回收率均为100%,专家权威系数均为0.95,肯德尔和谐系数分别为0.564、0.117(均P<0.05)。最终构建的眼科急诊预检分诊标准体系包括3个一级指标、11个二级指标。初步验证显示,该预检分诊标准体系具有92.7%的分诊准确率。结论:本研究构建的眼科急诊预检分诊标准体系结构合理、内容全面,具有科学性及实用性,可为眼科临床急诊预检分诊工作提供准确、有效的分诊工具,有助于提高临床工作效率及预检分诊质量。

关键词：眼科急诊预检分诊德尔菲法层次分析法

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO_2/TiAu/SiO_2 structure

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Science China(Technological Sciences) 2011年第4期54卷 830-834页

作者： BAI YiMing WANG Jun WANG Yu ZHANG Han CHEN NuoFu YAO JianXi HUANG TianMao WANG YanShuo ZHANG XingWang wu jinliang New and Renewable Energy of Beijing Key Laboratory North China Electric Power UniversityBeijing 102206China National Engineering Research Center for Optoelectronic Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

A novel interconnected structure consisting of a conventional polyimide layer(PM) and an additional SiO2/TiAu/SiO2 sandwich multilayer has been firstly proposed for improving the performance of GaAs micro-solar cell array.The specific experimental investigations on the array with 108 unit cells have demonstrated that the novel structure of PM/SiO2/TiAu/SiO2 can effectively enhance the open-circuit voltage from 75 to 84 V and the fill factor from 35% to 57%.The performance improvement of our devices can be attributed to two aspects.Firstly,the TiAu shielding film can prevent the incident light from penetrating into the GaAs substrate so as to induce the serious substrate leakage current.Secondly,the compact texture of SiO2 in the novel structure can reduce the perimere recombination due to the crackle or shrinkage of PM.It is indicated that the novel structure can distinctly reduce the leakage current and improve output characteristic of micro-solar cells.

关键词：太阳能电池阵列性能结构砷化镓 poly 微型基础聚酰亚胺细胞阵列

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电潜泵采油系统电气故障发生原因及改进措施

天津科技 2023年第3期50卷 98-100,104页

作者：吴锦亮中国海洋石油国际有限公司伊拉克公司北京100027

利用电潜泵进行采油作业具有功率大、适应性强、机组使用寿命长、经济效益高等优点,但不可否认的是其受电网影响大,电气故障难处理、工作效率不高,因此,如何提高其工作效率和降低电气故障发生率是一个非常关键的问题。结合经验,对电潜... 详细信息

利用电潜泵进行采油作业具有功率大、适应性强、机组使用寿命长、经济效益高等优点,但不可否认的是其受电网影响大,电气故障难处理、工作效率不高,因此,如何提高其工作效率和降低电气故障发生率是一个非常关键的问题。结合经验,对电潜泵采油系统的电气故障问题进行了系统分析,并给出了优化方案。

关键词：电潜泵绝缘电气故障优化设计