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Electrical and optical properties of hydrogen plasma treatedβ-Ga_(2)O_(3) thin films

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Journal of Semiconductors 2022年第9期43卷 74-80页

作者： Qian Jiang Junhua Meng Yiming Shi Zhigang Yin jingren chen Jing Zhang Jinliang Wu Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Information Science and Technology North China University of TechnologyBeijing 100144China Faculty of Science Beijing University of TechnologyBeijing 100124China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The behavior of H inβ-Ga_(2)O_(3) is of substantial interest because it is a common residual impurity that is present inβ-Ga_(2)O_(3),regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga_(2)O_(3) thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of theβ-Ga_(2)O_(3) films.The significant changes in the electrical and optical properties ofβ-Ga_(2)O_(3) may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporatedβ-Ga_(2)O_(3) films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.

关键词： β-Ga_(2)O_(3)film hydrogen plasma treatment electrical properties scattering mechanisms defect

Epitaxial growth of large area ZrS_(2)2D semiconductor films on sapphire for optoelectronics

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Nano Research 2022年第7期15卷 6628-6635页

作者： Yan Tian Yong cheng Jidong Huang Siyu Zhang Hao Dong Gaokai Wang jingren chen Jinliang Wu Zhigang Yin Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Recently,group-IVB semiconducting transition metal dichalcogenides(TMDs)of ZrS_(2) have attracted significant research interest due to its layered nature,moderate band gap,and extraordinary physical properties.Most device applications require a deposition of high quality large-area uniform ZrS_(2) single crystalline films,which has not yet been achieved.In this work,for the first time,we demonstrate the epitaxial growth of high quality large-area uniform ZrS_(2) films on c-plane sapphire substrates by chemical vapor deposition.An atomically sharp interface is observed due to the supercell matching between ZrS_(2) and sapphire,and their epitaxial relationship is found to be ZrS_(2)(0001)[1010]||Al_(2)O_(3)(0001)[1120].The epitaxial ZrS_(2) film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm^(2)·V^(−1)·s^(−1),and the optical phonon is the dominant scattering mechanism at room temperature or above.Furthermore,the optoelectronic applications of ZrS_(2) films are demonstrated by fabricating photodetector devices.The ZrS_(2) photodetectors exhibit the excellent comprehensive performance,such as a light on/off ratio of 106 and a specific detectivity of 2.6×10^(12) Jones,which are the highest values compared with the photodetectors based on other group-IVB two-dimensional TMDs.

关键词： ZrS_(2) epitaxial growth scattering mechanism photodetectors transition metal dichalcogenides

Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

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Fundamental Research 2021年第6期1卷 677-683页

作者： Gaokai Wang jingren chen Junhua Meng Zhigang Yin Ji Jiang Yan Tian Jingzhen Li Jinliang Wu Peng Jin Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Faculty of Science Beijing University of TechnologyBeijing 100124China

Recently,hexagonal boron nitride(h-BN),an ultra-wide bandgap semiconductor,has attracted considerable atten-tion owing to its excellent properties.In thin films grown on metal catalysts,contamination and damage induced by a transfer process cannot be avoided.Therefore,synthesizing h-BN films on non-catalytic dielectric substrates is desirable for electronic applications.In this study,we demonstrate the direct growth of high-quality h-BN films with a controllable thickness on sapphire substrates by using the pulsed laser deposition(PLD)technique.The effects of the deposition conditions and laser parameters on the growth of the h-BN films are systematically investigated by evaluating their characteristic Raman peaks.Among the various growth parameters studied,the substrate temperature has the greatest influence on the crystalline quality of the h-BN films,and the optimal pres-sure varies depending on the target-substrate distance.The h-BN film grown under optimal conditions exhibits a narrow Raman line width of∼30 cm^(−1),indicating a high crystalline quality.The photodetectors fabricated from the PLD-grown h-BN films exhibit superior deep-ultraviolet detection performance with a large on/offratio of>104,high photoresponsivity,and a sharp cut-offwavelength of 220 nm.This study presents the possibility of producing high-quality h-BN films by applying PLD on dielectric substrates for optoelectronic applications.

关键词： Hexagonal boron nitride Pulsed laser deposition Raman spectroscopy Photodetectors

A Research Summary on the Chemical Constituents and Pharmacological Effects of the National Medicine Polygonum capitatum

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Agricultural Biotechnology 2020年第5期9卷 124-126页

作者： jingren chen Ao XIE Wei WEI Haicheng WEN Guangxi University of Chinese Medicine Nanning 530001China

Polygonum capitatum Buch.Ham.ex D.Don is a commonly used medicine in Zhuang people’s settlements,which has antipyretic,wind and evil-dispelling,dehumidifying and analgesic effects.The research on the chemical composition of P.capitatum began in the 1980 s.Modern scientific research has shown that it has antibacterial,cooling and blood sugar lowering effect.In order to better develop and utilize P.capitatum,this paper reviewed the progress of the chemical composition and pharmacological research of P.capitatum.

关键词： Polygonum capitatum Touhualiao Chemical composition Pharmacological effects

基因甲基化检测联合高危型HPV检查对子宫颈癌筛查的分流价值

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中外医学研究 2023年第25期21卷 82-86页

作者：陈敬仁泉州市第一医院福建泉州362000

目的:探讨基因甲基化检测联合高危型HPV检查对子宫颈癌筛查的分流价值。方法:收集2020年10月—2022年10月于泉州市第一医院宫颈病变诊疗中心门诊就诊的80例机会性筛查女性的临床资料,均进行基因甲基化检测、高危型HPV检查及阴道镜下宫... 详细信息

目的:探讨基因甲基化检测联合高危型HPV检查对子宫颈癌筛查的分流价值。方法:收集2020年10月—2022年10月于泉州市第一医院宫颈病变诊疗中心门诊就诊的80例机会性筛查女性的临床资料,均进行基因甲基化检测、高危型HPV检查及阴道镜下宫颈病理活检,以宫颈病理活检结果为金标准,比较基因甲基化检测、高危型HPV检查单独及联合检测与金标准的一致性、对子宫颈癌的诊断效能及子宫颈癌筛查分流情况。结果:80例子宫颈癌筛查者中,宫颈病理活检结果检测出阳性23例,占比28.75%(23/80),阴性57例,占比71.25%(57/80)。23例阳性中,子宫颈鳞癌(SCC)占比为43.48%(10/23),低级别鳞状上皮内病变(LSIL)占比为39.13%(9/23),高级别鳞状上皮内病变(HSIL)占比为17.39%(4/23)。基因甲基化检测诊断为子宫颈癌的有16例,高危型HPV检查诊断为子宫颈癌的有15例,和金标准一致性较差(Kappa=0.372、0.357);二者联合检测诊断为子宫颈癌的有19例,与金标准一致性较好(Kappa=0.784)。基因甲基化检测联合高危型HPV检查筛查子宫颈癌的特异度、准确度、阴性预测值显著高于基因甲基化检测和高危型HPV检查单独检测,差异有统计学意义(P0.05)。联合检测SCC的阳性检出率均高于单独检测,阴道镜转诊率低于单独检测(P0.05)。结论:基因甲基化检测联合高危型HPV检查诊断子宫颈癌的价值较高,能够在细胞学异常中通过分流检测提高子宫颈癌阳性诊断率,降低阴道镜转诊率。

关键词：基因甲基化检测高危型人乳头瘤病毒检查子宫颈癌高级别鳞状上皮内病变

The habitats of Paragonimus in crabs and experimental animals.

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中国寄生虫学与寄生虫病杂志 1983年第S1期 44-45页

作者： chen Cuie, Cai Guangdou, chen jingren: Department of Parasitology, Hunan Medical College

A large number of Paragonimus metacercariae were collected from Sinopotamondepressum in a paragonimiasis endemic area in east Hunan. The habitats of metacerc-ariae in crabs were: chest muscles (40. 4%), ambulatory leg... 详细信息

关键词： The habitats of Paragonimus in crabs and experimental animals

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期望绩效反馈、公司发展与技术创新研究

科研管理 2018年第6期39卷 122-130页

作者：李健潘镇陈景仁南京师范大学商学院江苏南京210023

在制造业企业创新驱动时代背景下,本文基于组织行为理论,探索了制造业企业期望绩效反馈效果对企业技术创新效果的影响,并在此基础上结合公司发展理论和产品市场理论探讨了公司发展方式与产品市场竞争的情境效应以及二者的联合情境效应... 详细信息

在制造业企业创新驱动时代背景下,本文基于组织行为理论,探索了制造业企业期望绩效反馈效果对企业技术创新效果的影响,并在此基础上结合公司发展理论和产品市场理论探讨了公司发展方式与产品市场竞争的情境效应以及二者的联合情境效应。以制造业A股2001-2014年的面板数据对理论假设进行检验,结果显示:企业期望绩效反馈效果对企业技术创新效果产生正向影响;相比于外延型的发展方式而言,企业选择内涵型的发展方式更有利于推动企业的技术创新活动;而产品市场竞争在一定程度上也能够增强这种正向影响;最后,公司内涵型发展方式与产品市场竞争的联合情境效应对企业技术创新效果同样具有正向的调节作用。

关键词：期望绩效反馈技术创新公司发展产品市场竞争

制造业企业期望绩效反馈效果对组织冗余结构的影响及后果

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管理评论 2018年第11期30卷 198-208页

作者：李健潘镇陈景仁南京师范大学商学院南京210023

在制造业企业创新驱动背景下,本文对制造业企业期望绩效反馈效果与组织冗余结构的关系进行探索,并在此基础上进一步研究了产品市场竞争与融资约束的调节作用,以及冗余结构偏离对企业绩效的影响。以2001-2014年制造业A股上市公司的面板... 详细信息

在制造业企业创新驱动背景下,本文对制造业企业期望绩效反馈效果与组织冗余结构的关系进行探索,并在此基础上进一步研究了产品市场竞争与融资约束的调节作用,以及冗余结构偏离对企业绩效的影响。以2001-2014年制造业A股上市公司的面板数据来检验本文假设,结果发现:对于制造业企业,期望绩效反馈负向影响了企业的冗余结构;产品市场竞争加强了两者间的负向关系,同时该情境效应在融资约束情境中更为凸显;最后,组织实际冗余结构偏离标准冗余结构的程度越大,企业绩效将会越低。考虑了反事实情形和内生性问题,采用基于Kernel匹配得分法为实证结果提供了稳健性检验。本文的研究结论进一步加深了学术界和商业界对组织冗余结构的理论诠释和实践指导。

关键词：期望绩效反馈效果组织冗余结构产品市场竞争融资约束偏离

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基于车辆行驶数据的驾驶人行为谱分析方法

计算机应用 2018年第7期38卷 1916-1922,1928页

作者：陈镜任吴业福吴冰武汉理工大学计算机科学与技术学院武汉430063 交通物联网湖北省重点实验室(武汉理工大学) 武汉430063

针对我国驾驶人行为谱的研究尚不完善,专业领域内没有相应的行为谱分析工具的问题,提出了一套针对营运客车的完整的驾驶人驾驶行为谱体系并设计了一套分析工具。首先,设计并定义了驾驶人行为谱的特征指标和评价指标;其次,给出了驾驶人... 详细信息

针对我国驾驶人行为谱的研究尚不完善,专业领域内没有相应的行为谱分析工具的问题,提出了一套针对营运客车的完整的驾驶人驾驶行为谱体系并设计了一套分析工具。首先,设计并定义了驾驶人行为谱的特征指标和评价指标;其次,给出了驾驶人行为谱的特征指标分析、计算方法,采用基于马尔可夫链蒙特卡洛采样和离群点剔除的K-means算法对驾驶人的驾驶风格进行分析,采用回归学习对驾驶人的驾驶技能进行分析;然后,设计了基于车联网、大数据的驾驶人行为谱的基础数据采集和预处理方法;最后,采用Java语言、Spring MVC架构开发出驾驶人行为谱分析工具。将机器学习中的数据挖掘、数据分析算法与交通安全领域相结合,对完善我国驾驶人行为谱框架体系具有理论意义,为我国驾驶人行为谱的研究提供了一个科学、定量化分析的工具,对交管部门规范驾驶人驾驶行为、提高道路安全指数、制定合理的交通安全管理策略具有指导意义。

关键词：驾驶人行为谱驾驶人行为谱分析工具车辆行驶数据车联网交通安全大数据