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Chinese Physics Letters 2017年第4期34卷 83-86页

作者： Han-Han Lu jing-ping xu Lu Liu School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074

The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor （MOS） capacitors with or without ZrAION as the interfacial passivation layer （IPL） are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAION IPL exhibits better interracial and electrical properties, including lower interface-state density （1.14 × 10^12 cm^-2eV^-1）, smaller gate leakage current （6.82 × 10^-5 A//cm^2 at Vfb ＋1V）, smaller capacitance equivalent thickness （1.5 nm）, and larger k value （26）. The involved mechanisms lie in the fact that the ZrAION IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interracial Ga-/As-oxides and As-As dimers, which leads to improved interracial and electrical properties for the devices.

关键词： MOS Zr Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Lay

Recent advances in CRISPR-based genome editing technology and its applications in cardiovascular research

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Military Medical Research 2023年第6期10卷 862-880页

作者： Zhen-Hua Li Jun Wang jing-ping xu Jian Wang Xiao Yang State Key Laboratory of Proteomics Beijing Proteome Research CenterNational Center for Protein SciencesBeijing Institute of LifeomicsBeijing 100071China Yaneng BIOScience(Shenzhen)Co. Ltd.Shenzhen 518102GuangdongChina

The rapid development of genome editing technology has brought major breakthroughs in the fields of life science and medicine. In recent years, the clustered regularly interspaced short palindromic repeats(CRISPR)-based genome editing toolbox has been greatly expanded, not only with emerging CRISPR-associated protein(Cas) nucleases, but also novel applications through combination with diverse effectors. Recently, transposon-associated programmable RNA-guided genome editing systems have been uncovered, adding myriads of potential new tools to the genome editing toolbox. CRISPR-based genome editing technology has also revolutionized cardiovascular research. Here we first summarize the advances involving newly identified Cas orthologs, engineered variants and novel genome editing systems, and then discuss the applications of the CRISPR-Cas systems in precise genome editing, such as base editing and prime editing. We also highlight recent progress in cardiovascular research using CRISPR-based genome editing technologies, including the generation of genetically modified in vitro and animal models of cardiovascular diseases(CVD) as well as the applications in treating different types of CVD. Finally, the current limitations and future prospects of genome editing technologies are discussed.

关键词： Genome editing CRISPR-Cas system Base editing Prime editing Transposon-associated genome editing Cardiovascular disease Heart Blood vessel Gene therapy

Enhanced mobility of MoS_(2) field-effect transistors by combining defect passivation with dielectric-screening effect

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Chinese Physics B 2021年第1期30卷 545-550页

作者： Zhao Li jing-ping xu Lu Liu Xin-Yuan Zhao School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China

A facile method of combining the defect engineering with the dielectric-screening effect is proposed to improve the electrical performance of MoS_(2) transistors. It is found that the carrier mobility of the transistor after the sulfur treatment on the MoS_(2) channel is greatly enhanced due to the reduction of the sulfur vacancies during vulcanization of MoS_(2).Furthermore, as compared to those transistors with HfO2 and SiO2 as the gate dielectric, the Al2O3-gate dielectric MoS_(2) FET shows a better electrical performance after the sulfur treatment, with a lowered subthreshold swing of 179.4 m V/dec,an increased on/off ratio of 2.11 × 10^(6), and an enhanced carrier mobility of 64.74 cm^(2)/V·s(about twice increase relative to the non-treated MoS_(2) transistor with SiO2 as the gate dielectric). These are mainly attributed to the fact that a suitable k-value gate dielectric can produce a dominant dielectric-screening effect overwhelming the phonon scattering, increasing the carrier mobility, while a larger k-value gate dielectric will enhance the phonon scattering to counteract the dielectricscreening effect, reducing the carrier mobility.

关键词： MoS_(2)transistor sulfur vacancy high-k dielectric mobility

Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer

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Chinese Physics Letters 2018年第6期35卷 102-105页

作者： Lu Liu Yong Su jing-ping xu Yi-Xian Zhang School of Optical and Electronic Information Huazhong University of Science and Technology

Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated,and the influence of post-deposition annealing temperature and thickness of the ZnO layer are *** force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO *** capacitance-voltage measurements,it is found that the memory device with 1.5 nm ZnO and annealed at 700℃shows a larger memory window of 4.3 V（at±6 V）and better retention characteristics than memoriy devices with2.5 nm ZnO or annealed at other *** results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.

关键词： ZnO Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer

Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics

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Chinese Physics B 2019年第12期28卷 338-344页

作者： Jian-Ying Chen Xin-Yuan Zhao Lu Liu jing-ping xu Ningbo Information Technology Service Center Ningbo 315400China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China

NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C–V and I–V characteristics are compared. It is found that the Al2O3/HfO2 back-gate transistor with NH3-plasma treatment shows the best electrical performance: high on–off current ratio of 1.53 × 107, higher field-effect mobility of 26.51 cm2/V·s, and lower subthreshold swing of 145 m V/*** are attributed to the improvements of the gate dielectric and interface qualities by the NH3-plasma treatment and the addition of Al2O3 as a buffer layer.

关键词： MoS2 transistor high-k dielectric NH3-plasma treatment oxygen vacancy mobility

All-optical switch and transistor based on coherent light-controlled single two-level atom coupling with two nanowires

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Chinese Physics B 2019年第11期28卷 179-185页

作者： Xin-Qin Zhang Xiu-Wen Xia jing-ping xu Mu-Tian Cheng Ya-ping Yang Institute of Atomic and Molecular Physics and Functional Materials School of Mathematics and PhysicsJinggangshan UniversityJi’an 343009China MOE Key Laboratory of Advanced Micro-structure Materials School of Physics Science and EngineeringTongji UniversityShanghai 200092China School of Electrical Engineering&Information Anhui University of TechnologyMaanshan 243002China

Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fineness microcavity,a new proposal is put forward which contains a single two-level atom asymmetrically coupled with two nanowires. Singleemitter manipulation of photonic signals for bilateral coherent incident is clear now, since we specify atomic saturation nonlinearity into three contributions which brings us a new approach to realizing light-controlled-light at weak light and single-atom levels. An efficient optically controllable switch based on self-matching-induced-block and a concise optical transistor are proposed. Our findings show potential applications in full-optical devices.

关键词： optical transistor optical switch nano-waveguide light-controlled-light

Chemical Vapor Deposition Growth of Large-Area Monolayer MoS_2 and Fabrication of Relevant Back-Gated Transistor

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Chinese Physics Letters 2019年第3期36卷 70-73页

作者： Jian-Ying Chen Lu Liu Chun-Xia Li jing-ping xu School of Optical and Electronic Information Huazhong University of Science and Technology Shenzhen Institution of Information Technology

A closed two-temperature-zone chemical vapor deposition(CVD) furnace was used to grow monolayer molybdenum disulfide(MoS_2) by optimizing the temperature and thus the evaporation volume of the Mo precursor. The experimental results show that the Mo precursor temperature has a large effect on the size and shape transformation of the monolayer MoS_2, and at a lower temperature of 760°C, the shape starts to change from a triangle to a truncated triangle. A large-area triangular monolayer MoS_2 with a side length of 145 °m is achieved at 760°***, the as-grown monolayer MoS_2 is used to fabricate back-gated transistors by means of electron beam lithography to evaluate the electrical properties of MoS_2 thin films. The MoS_2 transistors with monolayer MoS_2 grown at 760°C exhibit a high on/off current ratio of 10~6, a mobility of 1.92 cm^2/Vs and a subthreshold swing of 194.6 mV/dec, demonstrating the feasible approach of CVD deposition of monolayer MoS_2 and the fabrication of transistors on it.

关键词： Chemical Large-Area Monolayer Fabrication

Phase-modulated quadrature squeezing in two coupled cavities containing a two-level system

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Chinese Physics B 2020年第5期29卷 125-131页

作者： Hao-Zhen Li Ran Zeng xue-Fang Zhou Mei-Hua Bi jing-ping xu Ya-ping Yang School of Communication Engineering Hangzhou Dianzi UniversityHangzhou 310018China Key Laboratory of Advanced Micro-Structured Materials of Ministry of Education School of Physics Science and EngineeringTongji UniversityShanghai 200092China

The phase-modulated quadrature squeezing in the system that composed of two coupled cavities interacting with a two-level atom is *** variances of the amplitude and phase quadrature of the output field are *** turns out that the squeezing behaviors of the output field can be obviously modified due to the phase difference of the coupling strengths between the atom and the two *** squeezing in one quadrature(i.e.,phase quadrature)can be transferred into another(i.e.,amplitude quadrature),or the quadrature squeezing located at the low-frequency region can be transferred into the high-frequency region by modulating the relative phase of the coupling ***,the effects of the decay mismatch between the two cavities and the coupling mismatch between the atom and the cavities on the quadrature squeezing have been *** results show that both the decay mismatch and the coupling mismatch play a positive role in generating better quadrature squeezing.

关键词： quadrature squeezing cavity QED phase modulation

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content

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Chinese Physics B 2019年第12期28卷 331-337页

作者： Lin Zhou Lu Liu Yu-Heng Deng Chun-Xia Li jing-ping xu School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China Shenzhen Institute of Information Technology Shenzhen 518172China

High-quality dielectric/Ge interface and low gate leakage current are crucial issues for high-performance nanoscaled Ge-based complementary metal–oxide–semiconductor(CMOS) device. In this paper, the interfacial and electrical properties of high-k Hf Gd ON/La Ta ON stacked gate dielectric Ge metal–oxide–semiconductor(MOS) capacitors with different gadolinium(Gd) contents are investigated. Experimental results show that when the controlling Gd content is a suitable value(e.g., 13.16%), excellent device performances can be achieved: low interface-state density(6.93 × 10^11 cm^-2·e V-1), small flatband voltage(0.25 V), good capacitance–voltage behavior, small frequency dispersion, and low gate leakage current(2.29× 10^-6 A/cm^2 at Vg = Vfb + 1 V). These could be attributed to the repair of oxygen vacancies, the increase of conduction band offset, and the suppression of germanate and suboxide Ge Ox at/near the high k/Ge interface by doping suitable Gd into Hf ON.

关键词： Ge MOS devices HfGdON dielectric interface quality leakage current density

Control Schemes for Driving Electro-optic Array Beam Deflectors

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Semiconductor Photonics and Technology 2006年第1期12卷 67-72页

作者： GONG Xiang-dong LI jing-zhen YANG jing xu ping HUANG Hong-bin College of Engineering and Technology Shenzhen University Shenzhen 518060 CHN

The beam deflectors based on electro-optic phased array（EOPA） is mainly described, and then an analysis on existing control schemes for driving the EOPA beam deflectors, based on custom hard-wired electronics or based on software in a microcontroUer, is made. Compared with these, a driving and control system for a multi-channel EOPA beam deflector is presented, in which the control assignment is implemented with a field programmable gate array（FPGA） chip. For different performance requirements, two control schemes, one with the serial scheme and another with the parallel scheme, have been explored and rapidly prototyped in Xilinx FPGA chips. With the control structures for the EOPA beam deflector, scanning rates of 588 kHz and 5 MHz can be respectivelv reached.

关键词： Beam deflection Electro-optic phased array Driving control Rapidly prototyping