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Circuit design of RRAM-based neuromorphic hardware systems for classification and modified Hebbian learning

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Science China(Information Sciences) 2019年第6期62卷 141-159页

作者： Yuning JIANG Peng HUANG Zheng ZHOU jinfeng kang Institute of Microelectronics Peking University

This paper proposes a solution to the learning of neuromorphic hardware systems based on metal-oxide resistive random access memory(RRAM) arrays, which are used as binary electronic synapses.A modified Hebbian learning method is developed to update the binary synaptic weights, and mixed-signal circuits are designed to implement the proposed learning method. The circuits are verified by SPICE, and systematic simulations are also conducted to verify the capability of the neuromorphic system to process relatively large databases. The results show that the system presents high processing speed(106 examples per second) for both classification and learning, and a high recognition accuracy(up to 95.6%) on the MNIST database.

关键词： RRAM neuromorphic system neuron circuits Hebbian learning pattern classification

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

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Progress in Natural Science:Materials International 2015年第1期25卷 47-50页

作者： Bin Gao Lifeng Liu jinfeng kang Institute of Microelectronics Peking University

Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fabfriendly materials. Hf Oxresistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatability, and so on. In this work, the Hf Oxsynaptic device was investigated based on its resistive switching phenomenon. Hf Oxresistive switching device with different electrodes and dopants were fabricated. Ti N/Gd:Hf Ox/Pt stack exhibited the best synaptic performance, including controllable multilevel ability and low training energy consumption. The training schemes for memory and forgetting were developed.

关键词： Hafnium oxide(HfOx) Resistive switching Memristor Multilevel cell(MLC) Synapse

An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

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Science China(Information Sciences) 2023年第4期66卷 261-271页

作者： Haozhang YANG Peng HUANG Runze HAN Xiaoyan LIU jinfeng kang School of Integrated Circuits Peking University

In this article, the design of a novel 3D-NAND-based content addressable memory(CAM) consisting of two flash transistors with ultra-high density and low power consumption is proposed for dataintensive computing. Hewlett simulation program with integrated circuit emphasis(HSPICE) of a 3D-NAND-based CAM array is performed to study the functionality and properties of the presented CAM design, and the results indicate that the energy consumption is 0.196 fJ/bit/search. The cell density of a 16-layer 3D-NAND flash is 157 times higher than CAMs based on conventional static random access ***, to exploit the multibit storage property of 3D-NAND flash, we also propose a multilevel CAM design, which significantly boosts the cell density and expands the functionality. As a proof-of-concept illustration, we take a 4-level CAM to successfully implement the search operation. Furthermore, the impacts of 3D-NAND layers and parasitic effects on the performance of the proposed CAM design are also discussed.

关键词： content addressable memory (CAM) 3D-NAND flash data-intensive computing in-memory computing multilevel CAM

Efficient evaluation model including interconnect resistance effect for large scale RRAM crossbar array matrix computing

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Science China(Information Sciences) 2019年第2期62卷 169-179页

作者： Runze HAN Peng HUANG Yudi ZHAO Xiaole CUI Xiaoyan LIU jinfeng kang Institute of Microelectronics Peking University Key Lab of Integrated Microsystems Peking University Shenzhen Graduate School

Crossbar architecture has been considered as an efficient means to execute a matrix-vector multiplication computation. An efficient evaluation model for this computation including the interconnect resistance effect on the high density resistive random access memmory(RRAM) crossbar array is proposed in this paper. The proposed model considers the interconnect resistance impacts on the columns and rows separately. The simulation results indicate that the computing speed of the proposed model can be boosted by over three orders of magnitude with the computation deviation of 7.7% in comparison with the precise comprehensive model in the 64 kb crossbar array fabricated at the 14 nm technology node. Based on the proposed evaluation model, the impacts of the parameters including nonlinearity and load resistance, on the computation are discussed along with solutions to improve the computational performance.

关键词： crossbar array evaluation model interconnect resistance matrix-vector multiplication RRAM

Improved conversion efficiency of dye-sensitized solar cells by using novel complex nanostructured TiO_2 electrodes

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Science China(Technological Sciences) 2013年第1期56卷 115-119页

作者： ZHANG TianShu LIU LiFeng YANG Fei WANG Yi kang jinfeng Institute of Microelectronics Peking University

A novel complex nanostructured TiO2 electrode and fabrication process were proposed and demonstrated to improve the performance of dye-sensitized solar cells(DSSCs).In the proposed process,a nanoporous TiO2 layer was firstly fabricated on the FTO(fluorine-doped tin oxide) conducting substrate by an anodization process,then a nanoparticulate TiO2 film was deposited on the nanoporous TiO2 layer by the screen printed method to form the complex nanostructured TiO2 *** experiments demonstrated that the nanoporous TiO layer can enhance the light scattering,decrease the contact resistance between TiO2 electrode and FTO,and suppress the recombination of I3-ion with the injected electrons of *** process variables are crucial to obtain the optimized performance of *** adopting the optimized process,improved conversion efficiency of DSSCs was achieved at AM 1.5 sunlight.

关键词： dye-sensitized solar cells conversion efficiency nanoporous TiO2 electrode anodization

维普期刊数据库

A 3.3-Mbit/s true random number generator based on resistive random access memory

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Science China(Information Sciences) 2023年第11期66卷 311-312页

作者： Shiyue SONG Peng HUANG Wensheng SHEN Lifeng LIU jinfeng kang School of Integrated Circuits Peking University Beijing Advanced Innovation Center for Integrated Circuits

In the era of mobile computing and the Internet of Things,hardware security systems have become ever-increasingly crucial. Resistive random access memory(RRAM) has gained increasing interest in stochastic computing and information security applications due to easy entropy extraction and a high parallel stochastic number throughout [1].However, the existing RRAM-based true random number generators(TRNGs) rarely reach a desirable speed and low-energy consumption [2].

关键词： RRAM

Doping profile modification approach of the optimization of HfOx based resistive switching device by inserting AlOx layer

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Science China(Information Sciences) 2015年第06期58卷 152-158页

作者： HOU Yi CHEN Bing CHEN Zhe ZHANG FeiFei LIU LiFeng kang jinfeng CHENG YuHua Institute of Microelectronics Peking University

Hf Ox based resistive switching devices with thin Al Ox layer inserted between Hf Ox and Ti N top electrode(TE) and Pt bottom electrode(BE) were fabricated respectively. Both devices show robust bipolar resistive switching phenomenon. Experimental result reveals that Ti N/Al Ox/Hf Ox/Pt device with appropriately thick Hf Ox film shows significant enhancement in performance as compared with other samples, having lower voltage and excellent uniformity. The role of inserted Al Ox layer and thickness of Hf Ox film on resistive switching properties are discussed and clarified through comparative experiments, which is considered to be a doping effect. The experimental result is consistent with the model where resistive switching happens near Ti N top electrode(TE) due to partial rupture and reconstruction of conducting filaments(CFs) assisted by the doping. The different doping profiles near top electrode of the samples were confirmed by XPS depth *** work provides detailed information about the optimization of Hf Ox based resistive switching device by a doping profile modification approach.

关键词： RRAM uniformity switching voltage Hf Ox Al Ox doping

A physics-based electromigration reliability model for interconnects lifetime prediction

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Science China(Information Sciences) 2021年第11期64卷 257-258页

作者： Linlin CAI Wangyong CHEN jinfeng kang Gang DU Xiaoyan LIU Xing ZHANG Institute of Microelectronics Peking University

Dear editor,When the technology node scales down to 14 nm, the backend-of-line(BEOL) in IC design faces the more serious challenges [1, 2]. The high-density integration induced by the technology innovation increases the number of interconnecting layers and reduces the metal pitch, making the placement and routing of BEOL more difficult. Meanwhile, due to the size effects, the maximum tolerable current density in narrow dimensions of metal lines can no longer meet the requirements of driving current density in interconnects.

关键词： electromigration modeling interconnects time-to-failure reliability

Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy

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Science China(Information Sciences) 2023年第2期66卷 289-290页

作者： Guihai YU Peng HUANG Runze HAN Lixia HAN Xiaoyan LIU jinfeng kang Institute of Microelectronics Peking University

Dear editor,Flash memory is a promising candidate to realize in-memory computing due to its mature fabrication technology [1]. Various efforts to implement neural networks using flash computing arrays have been reported [2, 3]. To realize higher computing efficiency, it is an effective method to activate more word lines(WL) at the same time for flash computing arrays [4]. When increasing the activated WL,

关键词： Mapping