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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

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Science China(Information Sciences) 2022年第10期65卷 285-292页

作者： Siyu liu Xiaohua MA Jiejie ZHU Minhan MI Jingshu GUO jielong liu Yilin CHEN Qing ZHU Ling YANG Yue HAO Key Laboratory of Wide Bandgap Semiconductor Technology School of Microelectronics Xidian University School of Advanced Materials and Nanotechnology Xidian University

The etching process of high-performance recessed-gate In Al N/Ga N high-electron mobility transistors(HEMTs) has been actively researched. This paper proposes a post-etching self-limited surface restoration method that effectively suppresses the etching damage, enhancing the transport properties of recessed-gate In Al N/Ga N HEMTs. We fabricated planar-gate devices, inductively coupled plasma(ICP)-etched devices, and post-etching-treated(PET) devices. The damage caused by the ICP etching process severely deteriorated the transport properties of the devices. However, the post-etching process effectively inhibited the etching damage and improved the device transport properties. Through temperature-dependent tests and a simulation, the change in the peak transconductance was compared among different devices. The temperature-dependent optical phonon scattering and impurity-dependent remote charge scattering mechanisms were analyzed. The results confirmed that the etching damage significantly affected the channel electron scattering mechanism. The field-effect mobility showed a linear relationship with temperature, and the optical phonon scattering model illustrated that the field-effect mobility decreased with increasing temperature. The etching damage caused a decrease in the field-effect mobility from 1075.5 to 699.1 cm~2/V·s,which increased the fitting error between this empirical line and the optical phonon scattering fitting curve from 0.086 to 0.948, similar to the remote charge scattering fitting curve. The combined error range is from 0.896 to 0.054.

关键词： GaN InAlN/GaN HEMTs etching damage scattering mechanism

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A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

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Science China(Information Sciences) 2024年第1期67卷 314-315页

作者： Sirui AN Minhan MI Pengfei WANG Sijia liu Qing ZHU Meng ZHANG Zhihong CHEN jielong liu Siyin GUO Can GONG Xiaohua MA Yue HAO School of Microelectronics Xidian University School of Advanced Materials and Nanotechnology Xidian University Hubei Jiufengshan Laboratory

GaN-based HEMTs have significant advantages, making them a prime choice for high-frequency, high-power switching [1]. However, the inherent poor linearity of GaN HEMT has yet to be solved, which can be reflected by the nonlinearity of the transconductance (Gm) profile [2]. This makes it hard to achieve high data transmission efficiency and less signal distortion in the wireless communication system [3].

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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

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Chinese Physics B 2022年第11期31卷 482-486页

作者： Zhihong Chen Minhan Mi jielong liu Pengfei Wang Yuwei Zhou Meng Zhang Xiaohua Ma Yue Hao Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown *** bilayer SiN with 20-nm Si-rich SiN and 100-nm Si_(3)N_(4) was deposited by plasma-enhanced chemical vapor deposition(PECVD)after removing 20-nm SiO_(2)pre-deposition *** to traditional Si_(3)N_(4) passivation for thin-barrier AlGaN/GaN HEMTs,Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54%to 8.40%.However,Si-rich bilayer passivation leads to a severer surface leakage current,so that it has a low breakdown *** 20-nm SiO_(2)pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga–O bonds,resulting in a lower surface leakage *** contrast to passivating Si-rich SiN directly,devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 *** frequency(RF)small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to f_(T)/f_(max) of 68 GHz/102 *** 30 GHz and V_(DS)=20 V,devices achieve a maximum P_(out) of 5.2 W/mm and a peak power-added efficiency(PAE)of 42.2%.These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.

关键词： AlGaN/GaN HEMTs thin-barrier Si-rich SiN passivation current collapse surface leakage current millimeter-wave

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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

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Chinese Physics B 2022年第2期31卷 547-551页

作者： Pengfei Wang Minhan Mi Meng Zhang Jiejie Zhu Yuwei Zhou jielong liu Sijia liu Ling Yang Bin Hou Xiaohua Ma Yue Hao Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China Xidian University Guangzhou Institute of Technology Guangzhou 510555China

We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate *** comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in *** fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias *** the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/***,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d *** device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.

关键词： AlGaN/GaN linearity 1-dB compression point millimeter-wave application

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论生产劳动的社会化和层次化

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当代财经 2000年第4期 3-6页

作者：刘解龙长沙电力学院长沙410077

生产劳动是一种能够通过市场关系转化为社会劳动的配置生产要素的生产经营活动。生产劳动具有社会化和层次化的属性。生产要素是社会化和层次化的生产劳动共同创造价值的联接机制。

关键词：生产劳动生产要素社会化层次化

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习近平生态文明思想体系的学理性阐释

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长沙理工大学学报（社会科学版） 2023年第2期38卷 1-15页

作者：刘解龙长沙理工大学湖南省绿色经济研究基地湖南长沙410114

习近平生态文明思想是融科学性、整体性与逻辑性于一体的思想体系,推进这一思想体系的学理性研究,揭示其结构体系与发展方式,对深入理解和全面把握习近平新时代中国特色社会主义思想理论体系具有重大意义。习近平生态文明思想蕴含着完... 详细信息

习近平生态文明思想是融科学性、整体性与逻辑性于一体的思想体系,推进这一思想体系的学理性研究,揭示其结构体系与发展方式,对深入理解和全面把握习近平新时代中国特色社会主义思想理论体系具有重大意义。习近平生态文明思想蕴含着完整严谨的“原点—原则—原理”的学理性结构。基于“社会人”假设的“人民性”是这一思想的“原点”,围绕人民的主体地位,明确了推进生态文明建设的若干“原则”,在“原点”“原则”的基础上,构建起“原理”体系。结合时代发展,以习近平生态文明思想指导生态文明建设,已成为推进中国式现代化、创造人类文明新形态的强大力量。

关键词：习近平生态文明思想生态文明建设人民性系统性学理性中国式现代化人类文明新形态

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长株潭城市群两型社会建设:定位与定性

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湖湘论坛 2009年第3期22卷 26-28页

作者：刘解龙长沙理工大学湖南长沙410076

建设两型社会是国家层次的新的重大战略,背景深刻、内涵丰富、问题复杂、影响重大,既要有主动积极的实践探索,抓住机遇促发展,也要有深入系统的理论研究,提高认识上水平。甚至后者会更加深刻地影响着建设两型社会的进程与成效。因此,必... 详细信息

建设两型社会是国家层次的新的重大战略,背景深刻、内涵丰富、问题复杂、影响重大,既要有主动积极的实践探索,抓住机遇促发展,也要有深入系统的理论研究,提高认识上水平。甚至后者会更加深刻地影响着建设两型社会的进程与成效。因此,必须对长株潭城市群建设两型社会综合配套改革的宏观背景、丰富内涵、本质规定、机遇特点以及中国特色新型工业化的有关内容等问题,有一个系统化的理解和把握。

关键词：长株潭城市群两型社会理论研究

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中国特色反贫困理论的主要依据、科学体系和重大意义

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学术前沿 2021年第13期 123-127页

作者：汤建军姚选民刘解龙湖南省社会科学院长沙理工大学

中国特色反贫困理论是在中国持续反贫困长期实践中形成的,也是在世界各国共同探索治国难题过程中形成的。它深刻、科学、系统地回答了在尚未完成工业化发展的中国如何大规模全面消除绝对贫困的难题,怎样在精准理念与方法指导下,构建一... 详细信息

中国特色反贫困理论是在中国持续反贫困长期实践中形成的,也是在世界各国共同探索治国难题过程中形成的。它深刻、科学、系统地回答了在尚未完成工业化发展的中国如何大规模全面消除绝对贫困的难题,怎样在精准理念与方法指导下,构建一整套行之有效的政策体系、工作体系、制度体系,系统解决"扶持谁、谁来扶、怎么扶、如何退"等系列问题。要让中国特色反贫困理论真正全面展现自身的贡献与影响,必须在"学科体系、学术体系、话语体系"上进行总结提升,创造出与脱贫攻坚实践成就影响相当的理论体系,让我国的反贫困理论同反贫困的成就一样获得世界公认并继续造福人类。

关键词：反贫困理论中国特色脱贫攻坚习近平

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

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Chinese Physics B 2023年第3期32卷 467-471页

作者：郭静姝祝杰杰刘思雨刘捷龙徐佳豪陈伟伟周雨威赵旭宓珉瀚杨眉马晓华郝跃 School of Microelectronics Xidian UniversityXi'an 710071China The National Key Discipline Laboratory of Wide Bandgap Semiconductor Xidian UniversityXi'an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China China Academy of Space Technology(Xi'an) Xi'an 710100China

This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth *** 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN ***-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic ***,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.

关键词： InAlN/GaN low-resistance ohmic contacts metal–organic chemical vapor deposition(MOCVD) n^(+)-InGaN time of flight secondary ion mass spectrometry(TOF-SIMS)

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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

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Chinese Physics B 2023年第12期32卷 474-480页

作者：周雨威宓珉瀚王鹏飞龚灿陈怡霖陈治宏刘捷龙杨眉张濛朱青马晓华郝跃 School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China

Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal *** optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance ***,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and *** from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA *** addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized *** 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

关键词： InAlN/GaN rapid thermal annealing low voltage RF power performance terminal applications

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