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Infuence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy

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Journal of Materials Science & Technology 2013年第12期29卷 1134-1138页

作者： Yunyan Liu Shanying Yang Gongxiang Wei jiaoqing pan Yuzhen Yuan Chuanfu Cheng School of Science Shandong University of Technology Laiwu Vocational and Technical College Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences College of Physics and Electronics Shandong Normal University

Znl_xCoxO （x = 0.05） thin films are deposited on sapphire （0001） substrates by laser-molecular beam epitaxy technique at different substrate temperatures. The structural, stress and morphology evolution features are investigated by means of X-ray diffraction and atomic force microscopy. The surface parameters of roughness exponent α, root mean square （RMS） roughness w and autocorrelation length ~ are calculated and the surface parameters are preliminarily analyzed. The values of ~ vary from 0.7 to 0.9. The RMS roughness w is less than 2.2 nm, and it increases with increasing Ts from 300 to 400 °C, and then decreases when Ts is 500 °C. The autocorrelation length ~ decreases monotonously with the increase in Ts from 300 to 500 °C, which indicates that the increase in Ts restrains the spread of the surface fluctuations until Ts is higher than 400 °C.

关键词： ZnO Thin films Stress Morphology Laser-molecular beam epitaxy （LMBE）

Ultra-compact tunable graphene-based plasmonic multimode interference power splitter in mid infrared frequencies

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Science China(Information Sciences) 2017年第8期60卷 211-216页

作者： Pingping QIU Weibin QIU Zhili LIN Houbo CHEN Yixin TANG Jiaxian WANG Qiang KAN jiaoqing pan College of Information Science and Engineering Huaqiao University Institute of Semiconductors Chinese Academy of Sciences

In this paper, we propose graphene-based plasmonic multimode interference power splitters with ultra-compact size working in mid infrared range. Further, the arbitrary-ratio 1×2 power splitter with a size of 140 nm×232 nm, where the splitting ratio can be tuned continuously from 1:1 to 100:0, is numerically demonstrated. Meanwhile, the graphene-based arbitrary-ratio 1×2 power splitters with different frequencies and chemical potentials are also investigated. The proposed multimode interference structure with a deep nanoscale footprint might be a fundamental component of the future high density integrated plasmonic circuit or on-chip plasmonic interconnect techniques.

关键词： graphene multimode interference surface plasmon polaritons power splitter plasmonic integrated circuits

4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects

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Photonics Research 2019年第6期7卷 687-692页

作者： YAJIE LI HONGYAN YU WENGYU YANG CHAOYANG GE PENGFEI WANG FANGYUAN MENG GUANGZHEN LUO MENGQI WANG XULIANG ZHOU DAN LU GUANGZHAO RAN jiaoqing pan Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China

A 4 –λ hybrid InGaAsP-Si evanescent laser array is obtained by bonding III–V distributed feedback lasers to a silicon on insulator(SOI) substrate using a selective area metal bonding technique. Multiple wavelengths are realized by varying the width of the III–V ridge waveguide. The threshold current is less than 10 mA for all wavelength channels under continuous-wave(CW) operation at room temperature, and the lowest threshold current density is 0.76 kA∕cm2. The side mode suppression ratio(SMSR) is higher than 40 dB for all wavelength channels when the injection current is between 20 mA and 70 mA at room temperature, and the highest SMSR is up to 51 dB. A characteristic temperature of 51 K and thermal impedance of 144°C/W are achieved on average.The 4 –λ hybrid InGaAsP-Si evanescent laser array exhibits a low threshold and high SMSR under CW operation at room temperature. The low power consumption of this device makes it very attractive for on-chip optical interconnects.

关键词： optical Multiple room is mA dB it

Asymmetric quantum well broadband thyristor laser

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Journal of Semiconductors 2017年第11期38卷 71-75页

作者： Zhen Liu Jiaqi Wang Hongyan Yu Xuliang Zhou Weixi Chen Zhaosong Li Wei Wang Ying Ding jiaoqing pan Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Science Beijing 100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China State Key Laboratory for Macroscopic Physics and School of Physics Peking University Beijing 100871 China School of Engineering University of Glasgow Glasgow G12 8LT UK

A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well（AQW） is fabricated by metal organic chemical vapor deposition（MOCVD）. The 3-μm-wide Fabry-Perot（FP） ridge-waveguide laser shows an S-shape I-V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm（Δ（-10） dB） at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure.

关键词： broadband laser asymmetric quantum well thyristor

InP-based directly modulated monolithic integrated few-mode transmitter

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Photonics Research 2018年第5期6卷 463-467页

作者： ZHAOSONG LI DAN Lu YIMING HE FANGYUAN MENG XULIANG ZHOU jiaoqing pan Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China

A monolithic integrated few-mode transmitter comprising of two directly modulated distributed feedback lasers and a multimode-interference-coupler-based mode converter-multiplexer with 66% mode conversion efficiency was designed and demonstrated. A fundamental TE0 mode and a first-order TE1 mode were successfully generated from the transmitter, with the output power of 4 and 5.5 mW at a pump current of around 150 mA, respectively,at the common output port. The small signal modulation bandwidth of the TE0 and TE1 channels reached 17.4 and 14.7 GHz, respectively. Error-free 2 × 10-Gbit∕s direct modulation of the two-mode transmitter was demonstrated, with a power penalty of 4.3 dB between the TE0 mode and the TE1 mode at the bit error rate of 1 × 10^(-9).

关键词： TE

Ⅲ–Ⅴ compound materials and lasers on silicon

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Journal of Semiconductors 2019年第10期40卷 65-73页

作者： Wenyu Yang Yajie Li Fangyuan Meng Hongyan Yu Mengqi Wang Pengfei Wang Guangzhen Luo Xuliang Zhou jiaoqing pan Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083China

Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers over the past few decades.Here we review three main methods of integration ofⅢ–Ⅴ materials on Si,namely direct growth,bonding,and selectivearea hetero-epitaxy.TheⅢ–Ⅴmaterials we introduced mainly include materials such as GaAs and InP.The lasers are mainly lasers of related communication bands.We also introduced the advantages and challenges of the three methods.

关键词： integrated photonics hybrid laser silicon

Design and fabrication of a SiN-Si dua卜layer optical phased array chip

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Photonics Research 2020年第6期8卷 912-919页

作者： PENGFEI WANG GUANGZHEN LUO YANG XU YAJIE LI YANMEI SU JIANBIN MA RUITING WANG ZHENGXIA YANG XULIANG ZHOU YEJIN ZHANG jiaoqing pan Key Laboratory of Semiconductpr Materials Science Institute of SemiconductorsChinese Academy of SciencesBejing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBejing 100049China Bejing R&D Institute VanJee TechnologyBeijing 100193China

A SiN-Si dual-layer optical phased array(OPA)chip is designed and fabricated.It combines the low loss of SiN with the excellent modulation performance of Si,which improves the performance of Si single-layer OPA.A novel optical antenna and an improved phase modulation method are also proposed,and a two dimensional scanning range of 96°×14°is achieved,which makes the OPA chip more practical.

关键词： layer optical combine

基于FPGA的数字锁相放大器在气体探测中的应用

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计算机测量与控制 2012年第11期20卷 3027-3028,3041页

作者：范松涛周燕张强潘教青中国科学院半导体研究所光电系统实验室北京100083 北京光电技术研究所北京100010 中国科学院半导体研究所光电子研究发展中心北京100083

介绍了基于波长调制光谱技术的激光气体探测系统的基本原理,详细描述了双相数字锁相放大器基本原理和结构;为了实现模块化高精度在线激光气体检测系统,利用FPGA和模数数模器件设计了数字锁相放大器的硬件电路,将数字锁相算法在FPGA中实... 详细信息

介绍了基于波长调制光谱技术的激光气体探测系统的基本原理,详细描述了双相数字锁相放大器基本原理和结构;为了实现模块化高精度在线激光气体检测系统,利用FPGA和模数数模器件设计了数字锁相放大器的硬件电路,将数字锁相算法在FPGA中实现;基于FPGA的数字锁相放大器应用于激光甲烷分析仪中,并对4个标准甲烷气体进行了实际测试,在10%量程范围内示值误差不超过±0.2%;实验表明基于FPGA的数字锁相放大器能够用于高精度在线激光气体探测系统中。

关键词：数字锁相放大器 TDLAS FPGA 二次谐波

用MOCVD在偏(100)GaAs基片上生长空间规则排列的1.3μm InAs量子点(英文)

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Journal of Semiconductors 2005年第11期26卷 2074-2079页

作者：梁松朱洪亮潘教清王圩中国科学院半导体研究所光电子研究中心北京100083

用MOCVD技术在偏(100)GaAs衬底上生长了发光波长在1·3μm的线状空间规则排列InAs量子点.光致发光实验表明,相对于正(100)衬底,偏(100)GaAs衬底上生长的InAs量子点具有更好的材料质量,光谱有更大的强度和更窄的线宽.为了得到发光波长为1... 详细信息

用MOCVD技术在偏(100)GaAs衬底上生长了发光波长在1·3μm的线状空间规则排列InAs量子点.光致发光实验表明,相对于正(100)衬底,偏(100)GaAs衬底上生长的InAs量子点具有更好的材料质量,光谱有更大的强度和更窄的线宽.为了得到发光波长为1·3μm的量子点,对比研究了不同In含量的InGaAs应力缓冲层(SBL)和应力盖层(SCL)的应力缓冲作用.结果表明,增加SCL中In含量能有效延伸量子点发光波长到1·3μm,但是随着SBL中In的增加,发光波长变化不明显,并且材料质量明显下降.

关键词： InAs,量子点 MOCVD