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Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors

Light(Science & Applications) 2024年第4期13卷 706-716页

作者： Zhiwei Xie Ke Jiang Shanli Zhang jianwei ben Mingrui Liu Shunpeng Lv Yang Chen Yuping Jia Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesDongnanhu Road No.3888Changchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesYuquan Road No.19100049 BeijingChina These authors contributed equally:Zhiwei XieKe Jiang

With the fast development of artificial intelligence(AI),Internet of things(IOT),etc,there is an urgent need for the technology that can efficiently recognize,store and process a staggering amount of information.The AlScN material has unique advantages including immense remnant polarization,superior temperature stability and good latticematch to other III-nitrides,making it easy to integrate with the existing advanced III-nitrides material and device technologies.However,due to the large band-gap,strong coercive field,and low photo-generated carrier generation and separation efficiency,it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion,limiting its application in in-memory sensing and computing.In this work,an electro-optic duplex memristor on a GaN/AlScN hetero-structure based Schottky diode has been realized.This twoterminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability.For both electrical and opto-electrical modes,the current on/off ratio can reach the magnitude of 104,and the resistance states can be effectively reset,written and long-termly stored.Based on this device,the“IMP”truth table and the logic“False”can be successfully reproduced,indicating the huge potential of the device in the field of in-memory sensing and computing.

关键词： polarization duplex limiting

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240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

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Journal of Semiconductors 2024年第1期45卷 55-62页

作者： Shunpeng Lu Jiangxiao Bai Hongbo Li Ke Jiang jianwei ben Shanli Zhang Zi-Hui Zhang Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information EngineeringHebei University of TechnologyTianjin 300401China

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

关键词： AlGaN deep ultraviolet micro-LEDs light extraction efficiency size effect edge effect

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Tunable piezoelectric and ferroelectric responses of Al1-xScxN:The role of atomic arrangement

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Science China(Physics,Mechanics & Astronomy) 2023年第7期66卷 142-148页

作者： Hang Zang Zhiming Shi Mingrui Liu Yuping Jia Ke Jiang jianwei ben Yang Chen Shunpeng Lv Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In this study,we present first-principles investigations of the atomic structure of Al_(1-x)Sc_(x)N and its influence on its piezoelectric and ferroelectric properties.The unbiased structure searching revealed that Al_(1-x)Sc_(x)N with phase separation feature,where Al N and Sc N form a layered structure with different symmetries,is more stable than the corresponding wurtzite structure.The piezoelectric response of Al_(1-x)Sc_(x)N is strongly dependent on the atomic arrangements;in particular,Al_(0.5)Sc_(0.5)N with a wurtzite structure exhibits a large positive e33of 4.79 C/m^(2),whereas Al_(0.5)Sc_(0.5)N with a phase separation structure exhibits a negative e33of-0.67 C/m^(2).Moreover,the ferroelectric switching of Al_(1-x)Sc_(x)N demonstrated two distinct pathways for the wurtzite and phase separation structures,and the spontaneous polarization thus calculated exhibits entirely different values.Accordingly,we demonstrated that Al_(1-x)Sc_(x)N with a phase separation structure exhibits a low polarization switching barrier of 0.15 e V/f.***.and a large spontaneous polarization of-0.77 C/m^(2);thus,it can serve as a novel Al_(1-x)Sc_(x)N-based ferroelectric material.As the dipoles in Al_(1-x)Sc_(x)N with a phase separation structure are localized in the AlN region,they are individually switchable at no domain wall energy cost and are stable against extrinsic effects.

关键词： AIS_(c)N piezoelectric ferroelectric density functional theory

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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

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Light(Science & Applications) 2021年第4期10卷 671-680页

作者： Ke Jiang Xiaojuan Sun Zhiming Shi Hang Zang jianwei ben Hui-Xiong Deng Dabing Li State Key Laboratory of Lum inescence and Applications Changchun Institute of OpticsRne Mechanics and PhysicsChinese Academy of SciencesDongnanhu Road No.3888Changchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesYuquan Road No.19Beijing 100049China State Key Laboratory of Superlattices and M icrostruaures Institute of SemiconductorsChinese Academy of SciencesQinghuadong Road No.35Beijing 100083China

Ultra-wide band-gap nitrides have huge potential in micro-and optoelectronics due to their tunable wide band-gap,high breakdown field and energy density,excellent chemical and thermal stability.However,their application has been severely hindered by the low p-doping efficiency,which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum.Here,a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides,in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy.By non-equilibrium doping techniques,quantum engineering doped AIGaN:Mg with Al content of 60%is successfully fabricated.The Mg activation energy has been reduced to about 21 meV,and the hole concentration reaches higher than 10^(18)cm^(-3)at room temperature.Also,similar activation energies are obtained in AIGaN with other Al contents such as 50%and 70%;indicating the universality of the quantum engineering doping method.Moreover,deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method.With the quantum material growth techniques developing,this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices.

关键词： doping breakdown quantum

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Tunable piezoelectric and ferroelectric responses of AlScN: The role of atomic arrangement

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Science China(Physics,Mechanics & Astronomy) 2023年

作者： Hang Zang Zhiming Shi Mingrui Liu Yuping Jia Ke Jiang jianwei ben Yang Chen Shunpeng Lv Xiaojuan Sun Dabing Li Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences

In this study, we present first-principles investigations of the atomic structure of Al1-xScxN and its influence on its piezoelectric and ferroelectric properties. The unbiased structure searching revealed that Al1-xScxN with phase separation feature, where AlN and ScN form a layered structure with different symmetries, is more stable than the corresponding wurtzite structure. The piezoelectric response of Al1-xScxN is strongly dependent on the atomic arrangements; in particular, Al0.5Sc0.5N with a wurtzite structure exhibits a large positive e33of 4.79 C/m2, whereas Al0.5Sc0.5N with a phase separation structure exhibits a negative e33of-0.67 C/m2. Moreover, the ferroelectric switching of Al1-xScxN demonstrated two distinct pathways for the wurtzite and phase separation structures, and the spontaneous polarization thus calculated exhibits entirely different values. Accordingly, we demonstrated that Al0.25Sc0.75N with a phase separation structure exhibits a low polarization switching barrier of 0.15 eV/f.***.and a large spontaneous polarization of-0.77 C/m2; thus, it can serve as a novel Al1-xScxN-based ferroelectric material. As the dipoles in Al1-xScxN with a phase separation structure are localized in the AlN region, they are individually switchable at no domain wall energy cost and are stable against extrinsic effects.

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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode

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Photonics Research 2021年第10期9卷 1907-1915页

作者： LONG GUO KE JIANG XIAOJUAN SUN ZIHUI ZHANG jianwei ben YUPING JIA YONG WANG DABING LI State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information EngineeringHebei University of TechnologyTianjin 300401China

AlGaN solar-blind ultraviolet(SBUV)detectors have potential application in fire monitoring,corona discharge monitoring,or biological imaging.With the promotion of application requirements,there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero bias.In this work,we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p-i-n photodiode via inserting a multiple-quantum-well(MQW)into the depletion region.The MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark effect.Hence,the electrons can go through the detector multiple times,inducing unipolar carrier transport multiplication.Experimentally,an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved,corresponding to an external quantum efficiency of 226%,indicating the existence of internal current gain.When compared with the device without MQW structure,the gain is estimated to be about 103 in magnitude.The investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias.

关键词： AlGaN quantum ultraviolet

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Rapid inactivation of human respiratory RNA viruses by deep ultraviolet irradiation from light-emitting diodes on a high-temperatureannealed AlN/Sapphire template

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Opto-Electronic Advances 2023年第9期6卷 31-43页

作者： Ke Jiang Simeng Liang Xiaojuan Sun jianwei ben Liang Qu Shanli Zhang Yang Chen Yucheng Zheng Ke Lan Dabing Li Ke Xu State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Virology College of Life SciencesWuhan UniversityWuhan 430072China Institute for Vaccine Research Animal Biosafety Level 3 LaboratoryWuhan UniversityWuhan 430072China

Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage.The AlGaN-based deep ultraviolet(DUV)light-emission diode(LED)has high practical potentials because of its advantages of variable wavelength,rapid sterilization,environmental protection,and miniaturization.Therefore,whether the emission wavelength has effects on the disinfection as well as whether the device is feasible to sterilize various respiratory RNA viruses under portable conditions is crucial.Here,we fabricate AlGaN-based DUV LEDs with different wavelength on high-temperature-annealed(HTA)AlN/Sapphire templates and investigate the inactivation effects for several respiratory RNA viruses.The AlN/AlGaN superlattices are employed between the template and upper n-AlGaN to release the strong compressive stress(SCS),improving the crystal quality and interface roughness.DUV LEDs with the wavelength of 256,265,and 278 nm,corresponding to the light output power of 6.8,9.6,and 12.5 mW,are realized,among which the 256 nm-LED shows the most potent inactivation effect in human respiratory RNA viruses,including SARS-CoV-2,influenza A virus(IAV),and human parainfluenza virus(HPIV),at a similar light power density(LPD)of~0.8 mW/cm2 for 10 s.These results will contribute to the advanced DUV LED application of disinfecting viruses with high potency and broad spectrum in a portable and eco-friendly use.

关键词： AlGaN DUV LED superlattice SARS-CoV-2 influenza A virus

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Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

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Fundamental Research 2021年第6期1卷 717-734页

作者： Yuxuan Chen jianwei ben Fujun Xu Jinchai Li Yang Chen Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Fujian Key Laboratory of Semiconductor Materials and Applications CI Center for OSEDCollege of Physical Science and TechnologyXiamen UniversityXiamen 361005China

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet(UV)light-emitting diodes(LEDs)owing to their direct,wide,and adjustable energy bandgap.AlGaN-based devices have extensive appli-cability owing to their stable physico-chemical properties.With decades of research effort,significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline qual-ity,doping efficiency,and device design.In this review,methods to obtain high-quality AlGaN-based materials,achieve high doping efficiency,and design UV-LED structures are summarized and discussed.Finally,the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted.

关键词： AlGaN Growth of AlGaN-based material Doping UV-LED

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Metal-free multicomponent polymerization of activated diyne,electrophilic styrene and isocyanide towards highly substituted and functional poly(cyclopentadiene)

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Science China Chemistry 2023年第3期66卷 863-869页

作者： Xinyue Liu Xueqin Yang Xin Li jianwei Sun benzhao He Jacky W.Y.Lam ben Zhong Tang Department of Chemistry and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional MaterialsThe Hong Kong University of Science and TechnologyHong Kong 999077China Center for Advanced Materials Research Beijing Normal University at ZhuhaiZhuhai 519085China School of Science and Engineering Shenzhen Institute of Aggregate Science and TechnologyThe Chinese University of Hong KongShenzhen 518172China Center for Aggregation-Induced Emission South China University of TechnologyGuangzhou 510640China

The development of a facile and efficient polymerization to prepare cyclopentadiene-containing polymers is of vital importance and highly desired. In this work, a metal-free multicomponent polymerization of activated diyne, electrophilic styrene and isocyanide for the preparation of highly substituted poly(cyclopentadiene) was established. Soluble and thermally stable polymers with high molecular weights are obtained in high yields under mild conditions. By introducing the tetraphenylethene or triphenylamine moiety into polymer backbones, the resultant polymers show unique aggregation-induced emission(AIE)characteristics. Interestingly, AIE polymers can also be generated in situ from non-AIE monomers. Moreover, the prepared polymers can generate photopatterns to function as photoresists and can also serve as visualizing agents to selectively stain the lipid droplets in live cells. This efficient polymerization will open up enormous opportunities for preparing functional cyclopentadiene-containing polymers applicable in diverse areas.

关键词： multicomponent polymerization activated alkynes highly substituted poly(cyclopentadiene)

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Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy

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Science China(Physics,Mechanics & Astronomy) 2019年第6期62卷 87-92页

作者： CuiHong Kai XiaoJuan Sun Yu Ping Jia ZhiMing Shi Ke Jiang jianwei ben You Wu Yong Wang HeNan Liu XiaoHang Li DaBing Li State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences King Abdullah University of Science and Technology (KAUST) Advanced Semiconductor Laboratory

Surface potentials in the vicinity of V-pits(cone bottom) and U-pits(blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet(UV) light-assisted Kelvin probe force microscopy(KPFM). The band structure models are established to understand variation of the surface potentials at the pits and planar surface with and without UV light. The photo-generated carrier behavior at the pit defects is studied. According to the surface potential results, it can be deduced that the carrier distributions around the V-and U-pits are uneven. In dark, the electron concentration at the bottom of V-pit(30 n_0) and Upit(15 n_0) are higher than that at planar surface(n_0). Under UV light, for V-pit, the electron concentration at the cone bottom(4.93×10^(11) n_0) is lower than that at the surrounding planar surface(5.68×10^(13) n_0). For U-pit, the electron concentration at the blunt bottom is 1.35×10^(12) n_0, which is lower than that at the surrounding planar surface(6.13×10^(13) n_0). The non-equilibrium electron concentrations at different locations are calculated. Based on the non-equilibrium electron concentration, it can be concluded that the carrier recombination rate at pit defects is higher than that at planar surface.

关键词： pit defects surface potential electron concentration

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