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Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes

Photonics Research 2019年第7期7卷 14-18页

作者： Jan Ruschel Johannes Glaab Batoul Beidoun Neysha Lobo Ploch jens rass Tim Kolbe Arne Knauer Markus Weyers Sven Einfeldt Michael Kneissl Ferdinand-Braun-Institut Leibniz-Institut fur HochstfrequenztechnikGustav-Kirchhoff-Str.412489 BerlinGermany Technische Universitat Berlin Institut fur FestkorperphysikHardenbergstr.36EW6-710623 BerlinGermany

The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm^*** separate the impact of current from that of temperature, the junction temperature is kept constant by adjusting the heat sink temperature. Higher current was found to strongly accelerate the optical power reduction during operation. A mathematical model for lifetime prediction is *** indicates that lifetime is inversely proportional to the cube of the current density, suggesting the involvement of Auger recombinati on.

关键词： degradation light-emitting diodes lifetime

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Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

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Photonics Research 2017年第2期5卷 44-51页

作者： CARLO DE SANTI MATTEO MENEGHINI DESIREE MONTI JOHANNES GLAAB MARTIN GUTTMANN jens rass SVEN EINFELDT FRANK MEHNKE JOHANNES ENSLIN TIM WERNICKE MICHAEL KNEISSL GAUDENZIO MENEGHESSO ENRICO ZANONI Department of Information Engineering University of Padova Ferdinand-Braun-Institut Leibniz-Institut fur Hochstfrequenztechnik Technische Universitat Berlin Institut für Festkorperphysik

This paper reports a comprehensive analysis of the origin of the electroluminescence(EL)peaks and of the thermal droop in UV-B AlGaN-based *** carrying out spectral measurements at several temperatures and currents,(i)we extract information on the physical origin of the various spectral bands,and(ii) we develop a novel closed-form model based on the Shockley–Read–Hall theory and on the ABC rate equation that is able to reproduce the experimental data on thermal droop caused by non-radiative recombination through deep *** the samples under test,the three EL bands are ascribed to the following processes:band-to-band recombination in the quantum wells(main EL peak),a parasitic intra-bandgap radiative transition in the quantum well barriers,and a second defect-related radiative process in the p-AlGaN superlattice.

关键词： Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs Ga AlGaN EBL SRH UV

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Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

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Photonics Research 2020年第4期8卷 589-594页

作者： NORMAN SUSILO EVIATHAR ZIFFER SYLVIA HAGEDORN LEONARDO CANCELLARA CARSTEN NETZEL NEYSHA LOBO PLOCH SHAOJUN WU jens rass SEBASTIAN WALDE LUCA SULMONI MARTIN GUTTMANN TIM WERNICKE MARTIN ALBRECHT MARKUS WEYERS MICHAEL KNEISSL Institute of Solid State Physics Technische Universitat BerlinHardenbergstraβe 3610623 BerlinGermany Ferdinand-Braun-Institut Leibniz-Institut für HochstfrequenztechnikGustav-Kirchhoff-Strafβe 412489 BerlinGermany Leibniz-Institut für Kristallzüchtung Max-Born-Strafβe 212489 BerlinGermany

We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire *** this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and *** measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking *** UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),***,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO *** results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency.

关键词： Improved performance UVC-LEDs combination high-temperature annealing epitaxially laterally overgrown AlN/sapphire AlN UVC

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