检索结果-南通市图书馆

Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Semiconductors 2022年第7期43卷 84-88页

作者： Yunqi Li Xinwei wang Ning Zhang Xuecheng Wei junxi wang Institute of First Medical Center Chinese PLA General HospitalBeijing 100853China State Key Laboratory of Solid-State Lighting Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We report on the effect of inserted photonic crystalline(Ph-C) in the GaN epitaxial layer on the incorporation of the indium component for the InGaN-based green LED. The adoption of Ph-C in the GaN layer shifted the Raman peak value of E2mode of GaN to lower frequency and resulted in a tensive stress relief. The stress relief can be attributed to strained lattices restoring in the matrix of Ph-C and the GaN pseudo-epitaxy over the air-void of the Ph-C. Moreover, the HRXRD rocking curves and AFM results show that the insertion of Ph-C also improves the crystal quality. With the inserted Ph-C, the indium component in the multiple quantum wells of the green LED(Ph-C LED) was enhanced. This resulted in a 6-nm red-shift of the peak wavelength. Furthermore, the LOP of the Ph-C LED was enhanced by 10.65% under an injection current of 20 mA.

关键词： epitaxial growth nanocrystalline materials semiconductors Raman stress relief X-ray techniques

SIMULATION IN THERMAL DESIGN FOR ELECTRONIC CONTROL UNIT OF ELECTRONIC UNIT PUMP

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Mechanical Engineering 2008年第5期21卷 1-7页

作者： XU Quankui ZHU Keqing ZHUO Bin MAO Xiaojian wang junxi nstitute of Automotive Electronic Technology Shanghai Jiaotong University Shanghai 200240 China

The high working junction temperature of power component is the most common reason of its failure. So the thermal design is of vital importance in electronic control unit （ECU） design. By means of circuit simulation, the thermal design of ECU for electronic unit pump （EUP） fuel system is applied. The power dissipation model of each power component in the ECU is created and simulated. According to the analyses of simulation results, the factors which affect the power dissipation of components are analyzed. Then the ways for reducing the power dissipation of power components are carried out. The power dissipation of power components at different engine state is calculated and analyzed. The maximal power dissipation of each power component in all possible engine state is also carried out based on these simulations. A cooling system is designed based on these studies. The tests show that the maximum total power dissipation of ECU drops from 43.2 W to 33.84 W after these simulations and optimizations. These applications of simulations in thermal design of ECU can greatly increase the quality of the design, save the design cost and shorten design time

关键词： Diesel engine Electronic unit pump Electronic control unit Circuit simulation Thermal design

Deep localization features of photoluminescence in narrow AlGaN quantum wells

在线全文

学校读者我要写书评

暂无评论

Optoelectronics Letters 2024年第12期20卷 736-740页

作者： DENG Jianyang LI Rui GUO Ya'nan wang junxi wang Chengxin JI Ziwu School of Integrated Circuits Institute of Novel Semiconductors Shandong UniversityJinan 250100China Research and Development Center for Solid State Lighting Institute of Semiconductors Chinese Academy of SciencesBejing 100083China Shandong Inspur Huaguang Optoelectronics Co. Ltd.Weifang 261061China

The research prepared two deep ultraviolet(DUV)AlGaN-based multiple quantum well(MQW)samples with the same Al content in the QWs but different well widths(3 nm for Sample A and 2 nm for Sample B).Photoluminescence(PL)measurements reveal that Sample A exhibits only one main PL peak across all measured temperatures,while Sample B displays one main PL peak at low temperatures and two distinct PL peaks at high ***,compared with Sample A,Sample B exhibits a more significant temperature-dependent PL peak wavelength blue shift relative to the Varshni curve,a more significant excitation power density-dependent PL peak blue shift accompanied by linewidth broadening,as well as a larger non-radiative recombination related activation energy and higher internal quantum efficiency(IQE).These findings can be explained by the observation that the narrower well width of Sample B induces a more pronounced effect of carrier localization than the wider well width of Sample A,due to the enhanced fluctuation in well width and reduced quantum-confined Stark effect(QCSE).

关键词： AlGaN quantum narrow

Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2018年第2期39卷 74-77页

作者： Lily Liu Changbin Song Bin Xue Jing Li junxi wang Jinmin Li Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083 China State Key Laboratory of Solid State Lighting Chinese Academy of Sciences Beijing 100083 China Research and Development Center for Semiconductor Lighting Chinese Academy of Sciences Beijing 100083 China

Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.

关键词： thin film microcircuit photosensitive polyimide silicon dioxide imidization temperature

Implementation of slow and smooth etching of GaN by inductively coupled plasma

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2018年第11期39卷 19-24页

作者： Xilin Li Ping Ma Xiaoli Ji Tongbo Wei Xiaoyu Tan junxi wang Jinmin Li Research and Development Center for Solid State Lighting Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China University of Chinese Academy of Sciences Beijing 100049 China Beijing Engineer Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083 China

Slow and smooth etching of gallium nitride（GaN） by BCl;/Cl;-based inductively coupled plasma（ICP）is investigated in this paper. The effects of etch parameters, including ICP power, radio frequency（RF） power, the flow rate of Cl;and BCl;, on GaN etch rate and etch surface roughness RMS are discussed. A new model is suggested to explain the impact mechanism of the BCl;flow rate on etch surface roughness. An optimized etch result of a slow and smooth etch surface was obtained; the etch rate and RMS were 0.36 ?/s and 0.9 nm, respectively.

关键词： GaN ICP slow etching smooth etching

Ultraviolet communication technique and its application

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2021年第8期42卷 32-44页

作者： Liang Guo Yanan Guo junxi wang Tongbo Wei Research and Development Center for Semiconductor Lighting Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083China

With recent developments of deep ultraviolet(DUV)light-emitting diodes and solar-blind detectors,UV communication(UVC)shows great potential in replacing traditional wireless communication in more and more *** on the atmospheric scattering of UV radiation,UVC has gained considerable attention due to its non-line-of-sight ability,omnidirectional communication links and low background *** advantages make UVC an ideal option for covert secure communication,especially for military *** this review,we present the history and working principle of UVC with a special focus on its light sources and *** comparison and application of its light sources and detectors are provided to the best of our *** further discuss the future application and outlook of ***,this review will offer valuable insights into the future development of UVC.

关键词： ultraviolet communication non-line-of-sight optical wireless communication

Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates

在线全文

学校读者我要写书评

暂无评论

Science in China(Series F) 2005年第6期48卷 808-814页

作者： wang Xiaoliang wang Cuimei HU Guoxin wang junxi RAN Junxue FANG Cebao LI Jianping ZENG Yiping LI Jinmin LIU Xinyu LIU Jian QIAN He Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Institute of Microelectronics Chinese Academy of sciences Beijing 100029 China

AIGaN/GaN high electron mobility transistor （HEMT） structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Ω/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at Vgs=0.5 V and Vds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency （fT） and a 28-GHz maximum oscillation frequency （fmax） were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm （power density of 3.33 W/mm） with 41% power added efficiency （PAE） at 4 GHz.

关键词： HEMT GaN MOCVD power device

The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2017年第11期38卷 22-25页

作者： Shuo Zhang Yun Zhang Xiang Chen Yanan Guo Jianchang Yan junxi wang Jinmin Li Research and Development Center for Solid State Lighting Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China University of Chinese Academy of Sciences Beijing 100049 China Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083 China State Key Laboratory of Solid State Lighting Beijing 100083 China

We investigate the effect of AlN/AlGaN superlattices（SLs） on crystal and optical properties of AlGN epitaxial layers. The result indicates that the crystal quality of AlGaN layers is consistent within a wide range of SLs thicknesses, while the optical properties are opposite. With SLs thickness decreasing from 20/44 to 17/36 and 15/29 nm, the full-width at half maximum of X-ray rocking curves for （0002）- and（1012）-plane of n-AlGaN layers grown on SLs are consistent of around 250 arcsec and 700 arcsec, respectively. Meanwhile, the center of the low optical transmittance band decreases from 326 to 279 nm and less than 266 nm as the SLs thickness decreases.280 nm deep ultraviolet light-emitting diodes（DUV-LEDs） structures are further regrown on the n-AlGaN *** electroluminescent intensities of samples are 30% higher than that of the sample whose low optical transmittance band appears around 279 nm. Optical simulations reveal that the SLs acts as distributed Bragg reflectors, thus less photons of the corresponding wavelength escape from the sapphire backside.

关键词： AlN AlGaN superlattices crystal quality transmittance light-emitting diodes

Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111)Template

在线全文

学校读者我要写书评

暂无评论

Journal of Rare Earths 2006年第z1期24卷 11-13页

作者： Liu Zhe wang junxi wang Xiaoliang Hu Guoxin Guo Lunchun Liu Hongxin Li Jianping Li Jinmin Zeng Yiping Novel Materials Laboratory Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

The surface morphology of GaN grown by MOCVD on GaN/Si template was *** morphology and deep pinhole defects on some surface areas of the samples were observed and *** formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high *** deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si *** stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole *** surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

关键词： surface morphology GaN/Si template GaN MOCVD