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Self-powered and bipolar photodetector based on a van der Waals metal-semiconductor junction:Graphene/WSe_(2)/Fe_(3)GeTe_(2) heterojunction

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Science China(Technological Sciences) 2022年第6期65卷 1263-1272页

作者： XU Guoliang liU DanMin li jingzhen li JingJie YE ShuaiShuai Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Key Laboratory of Optoelectronics Technology College of MicroelectronicsFaculty of Information TechnologyBeijing University of TechnologyBeijing 100124China

A self-driven photosensor with signal-reversal response has the potential to work as a photodetector in complex environments with multiple signals owing to better signal recognition and enhanced signal-processing ***,a metal-semiconductor-metal photodetector based on ambipolar WSe_(2) with two electrodes comprising two-dimensional(2 D) van der Waals(vdWs) metal Fe_(3)GeTe_(2) and semimetal graphene was proposed to form an asymmetrical metal-contacted architecture with different Schottky barrier *** regulating gate field-induced Fermi level shift in WSe_(2) can be used to manipulate the WSe_(2) channel’s carrier type,resulting in a polarity-reversible photodetector without a bias ***,the photovoltaic effect can be observed from wavelengths of 450 nm(visible) to 850 nm(infrared) without external *** large open voltage is -0.177 V and short-circuit current is 17 nA under a 650-nm excitation *** reported WSe_(2)-based photodetector exhibits excellent properties under zero bias,including a large photo-to-dark current ratio greater than 10^(6) with dark current less than 1 fA,photovoltaic performance with an external quantum efficiency of 27.14%,an excellent detectivity of 3.4×10^(10) Jones,and a high responsivity of 116.38 mA/*** electron transfer occurs at the interface between WSe_(2) and vd Ws electrodes,resulting in a 370-μs response speed owing to the clean and nondestructive interfaces between vd Ws metals and WSe_(2).This study demonstrates the wide application prospect of the vd Ws metal Fe_(3)GeTe_(2) as an electrode forming a Schottky junction for realizing a photodetector without an external voltage and accelerates the development of 2 D photosensors with various working modes.

关键词： photodetector zero-biased WSe_(2) polarity-reversible van der Waals electrodes

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Reconfigurable logic and in-sensor encryption operations in an asymmetrically tunable van der Waals heterostructure

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Nano Research 2024年第4期17卷 3113-3119页

作者： Fan Gong Wenjie Deng Yi Wu Fengming liu Yihao Guo Zelin Che Jingjie li jingzhen li Yang Chai Yongzhe Zhang Key Laboratory of Optoelectronics Technology of Education Ministry of China Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of TechnologyBeijing 100124China Department of Applied Physics Hong Kong Polytechnic UniversityKowloonHong KongChina

Reconfigurable devices can be used to achieve multiple logic operation and intelligent optical sensing with low power consumption,which is promising candidates for new generation electronic and optoelectronic integrated ***,the versatility is still limited and need to be extended by the device architectures ***,we report an asymmetrically gate two-dimensional(2D)van der Waals heterostructure with hybrid dielectric layer SiO_(2)/hexagonal boron nitride(h-BN),which enable rich function including reconfigurable logic operation and in-sensor information encryption enabled by both volatile and non-volatile optoelectrical *** the partial gate is grounded,the non-volatile light assisted electrostatic doping endowed partially reconfigurable doping between n-type and p-type,which allow the switching of logic XOR and not implication(NIMP).When the global gate is grounded,additionally taking the optical signal as another input signal,logic AND and OR is realized by combined regulation of the light and localized gate *** on the high on/off current ratio approaching 105 and reliable&switchable logic gate,in-sensor information encryption and decryption is demonstrated by manipulating the logic ***,these results provide strong extension for current reconfigurable electronic and optoelectronic devices.

关键词： in-sensor encryption reconfigurable logic van der Waals heterostructure asymmetrical tunable architecture

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A 2Mbps Human Body Communication Transceiver Based on Body Antenna Effect

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Journal of Beijing Institute of Technology 2022年第1期31卷 39-52页

作者： Huajie Tang Pengfei Ao kun Wang Yuhang liu jingzhen li Abhishek Kandwal Zedong Nie Shenzhen Institute of Advanced Technology Chinese Academy of SciencesShenzhen 518055China

This paper presents a human body communication(HBC)transceiver for wireless body network *** transceiver employs on frequency shift keying(FSK)modulation and op-erates in 40 MHz-60 MHz which is the resonant frequency of the human body as an *** achieves high performance and stability through establish passive microstrip line and via models and active *** proposed transceiver is designed and fabricated by FR4 printed cir-cuit board(PCB)process,the transceiver has the ability of configurable data rate up to 2 Mbps and it achieves-86 dBm receiving sensitivity at 2 Mbps data ***,the transceiver out-put power dynamics range is 34 ***,with a visual interaction interface,the transceiv-er can be agility use in a variety of *** measurements are verified on human *** result shows that the transceiver has ability to send data from person to person by relying on hu-man body antenna *** transceiver shows great prospect in wireless body area networks(WBAN)for telemedicine and emergency communication.

关键词： human body antenna human body communication(HBC) transceiver wireless body artworks(WAN) frequency shift keying(FSK)modulation medical monitoring

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Enhancing multifunctional photocatalysis with acetate-assisted cesium doping and unlocking the potential of Z-scheme solar water splitting

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Carbon Energy 2024年第3期6卷 178-195页

作者： Mengmeng Ma jingzhen li Xiaogang Zhu Kong liu Kaige Huang Guodong Yuan Shizhong Yue Zhijie Wang Shengchun Qu Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijingChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina Department of Physics College of Physical Science and TechnologyXiamen UniversityXiamenChina State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijingChina

Graphitic carbon nitride(g-C_(3)N_(4))has been extensively doped with alkali metals to enlarge photocatalytic output,in which cesium(Cs)doping is predicted to be the most ***,the sluggish diffusion and doping kinetics of precursors with high melting points,along with imprecise regulation,have raised the debate on whether Cs doping could make *** this matter,we attempt to confirm the positive effects of Cs doping on multifunctional photocatalysis by first using cesium acetate with the character of easy *** optimized Csdoped g-C_(3)N_(4)(CCN)shows a 41.6-fold increase in visible-light-driven hydrogen evolution reaction(HER)compared to pure g-C_(3)N_(4) and impressive degradation capability,especially with 77%refractory tetracycline and almost 100%rhodamine B degradedwithin an *** penetration ofCs+is demonstrated to be a mode of interlayer doping,and Cs–N bonds(especially with sp^(2) pyridine N in C═N–C),along with robust chemical interaction and electron exchange,are *** atomic configuration triggers the broadened spectral response,the improved charge migration,and the activated photocatalytic ***,we evaluate the CCN/cadmium sulfide hybrid as a Z-scheme configuration,promoting the visible HER yield to 9.02 mmol g^(−1) h^(−1),which is the highest ever reported among all CCN *** work adds to the rapidly expanding field of manipulation strategies and supports further development of mediating served for photocatalysis.

关键词： acetate-assisted cesium doping multifunctional photocatalysis Z-scheme

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Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction

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Science China(Information Sciences) 2024年第3期67卷 315-316页

作者： Guoliang XU Chao HE Donghong SHI Danmin liU Wenjie DENG jingzhen li Xingtao AN Yongzhe ZHANG Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface College of ScienceHebei University of Science and Technology Key Laboratory of Advanced Functional Materials Ministry of EducationFaculty of Materials and ManufacturingBeijing University of Technology Key Laboratory of Optoelectronics Technology Ministry of EducationFaculty of Information TechnologyBeijing University of Technology

Excitons play an important role as interconnect in the optical and optoelectronic response and have attracted much attention for understanding the physical matters behind excitons [1, 2]. Excitons in atomically thin transition metal dichalcogenides semiconductors(TMDs) often trap an electron(X-) or a hole(X+) to form so-called trions,

关键词： Excitons

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High-performance sub-10-nm monolayer black phosphorene tunneling transistors

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Nano Research 2018年第5期11卷 2658-2668页

作者： Hong li Jun Tie jingzhen li Meng Ye Han Zhang Xiuying Zhang Yuanyuan Pan Yangyang Wang Ruge Quhe Feng Pan Jing Lu College of Mechanical and Material Engineering North China University of Technology Beijing 100144 China State Key Laboratory of Mesoscopic Physics and Department of Physics Peking University Beijing 100871 China Collaborative Innovation Center of Quantum Matter Beijing 100871 China School of Advanced Materials Peking University Shenzhen Graduate School Shenzhen 518055 China Nanophotonics and Optoelectronics Research Center Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing 100094 China State Key Laboratory of Information Photonics and Optical Communications & School of Science Beijing University of Posts and Telecommunications Beijing 100876 China

Moore＇s law is approaching its physical limit. Tunneling field-effect transistors （TFETs） based on two-dimensional （2D） materials provide a possible scheme to extend Moore＇s law down to the sub-10-nm region owing to the electrostatic integrity and absence of dangling bonds in 2D materials. We report an ab initio quantum transport study on the device performance of monolayer （ML） black phosphorene （BP） TFETs in the sub-10-nm scale （6-10 nm）. Under the optimal schemes, the ML BP TFETs show excellent device performance along the armchair transport direction. The on-state current, delay time, and power dissipation of the optimal sub-10-nm ML BP TFETs significantly surpass the latest International Technology Roadmap for Semiconductors （ITRS） requirements for high- performance devices. The subthreshold swings are 56-100 mV/dec, which are much lower than those of their Schottky barrier and metal oxide semiconductor field-effect transistor counterparts.

关键词： black phosphorene tunneling field-effect transistor device performance ab initio quantum transport simulation

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Remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

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Nano Research 2024年第4期17卷 3224-3231页

作者： Jidong Huang Jingren Chen Junhua Meng Siyu Zhang Ji Jiang jingzhen li libin Zeng Zhigang Yin Jinliang Wu Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Faculty of Science Beijing University of TechnologyBeijing 100124China

As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer *** an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote ***,there is a current debate on the feasibility of using h-BN as interlayer in the remote ***,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer *** field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)*** to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices.

关键词： remote epitaxy hexagonal boron nitride transition metal dichalcogenides chemical vapor deposition photodetectors

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A Novel Flexible Antenna at Very High Frequency Band for On-Body Applications

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Journal of Beijing Institute of Technology 2022年第1期31卷 81-90页

作者： Abhishek Kandwal Huajie Tang Pengfei Ao Kun Wang jingzhen li Yuhang liu Tobore Igbe Zedong Nie Shenzhen Institute of Advanced Technology Chinese Academy of SciencesShenzhen 518055China

This paper proposes a novel flexible antenna design operating at very high frequency(VHF)band for on-body applications such as human body communication(HBC).The antenna consists of back-to-back E-shaped fractal and complimentary structures designed over a thin flex-ible *** overall design working on the principle of fractal geometries and capacitive coupling is highly beneficial to achieve better antenna characteristics even at low frequencies around 35 MHz-45 MHz that are being used for HBC *** proposed antenna obtained a large bandwidth of around 10.0 MHz in air and a bandwidth of around 8.0 MHz during on-body *** antenna has been tested in three different scenarios ***,on-body single antenna and on-body communication using two *** insertion loss is reduced to a minimum in all three scenarios,which is quite beneficial for better signal *** size miniaturization with high flexibility in such low frequencies has also been achieved in the paper that makes the proposed design suitable for human body communication applications.

关键词： antenna very high frequency(VHF) human body communication(HBC) bandwidth loss flexible

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转镜式超高速成像技术进展(特邀)

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光子学报 2022年第7期51卷 34-50页

作者：李景镇深圳大学物理与光电工程学院光子工程研究所深圳市微纳光子信息技术重点实验室广东深圳518060

转镜式超高速成像摄影机具有大画幅、大画幅数、高空间分辨率、宽光谱波段,以及摄影频率宽广和使用可靠方便的优势,在微秒级成像领域具有重要应用,至今依然没有任何一种电子类摄影机在画幅数、摄影速度、空间分辨率和动态范围诸方面能... 详细信息

转镜式超高速成像摄影机具有大画幅、大画幅数、高空间分辨率、宽光谱波段,以及摄影频率宽广和使用可靠方便的优势,在微秒级成像领域具有重要应用,至今依然没有任何一种电子类摄影机在画幅数、摄影速度、空间分辨率和动态范围诸方面能和转镜式摄影机相匹敌。本文论述了转镜式超高速摄影技术在其信息论的拓扑、转镜动力学的探索、转镜摄影机现代设计理论和“皇冠上的珍珠”等待型分幅扫描同时成像系统研究诸方面的进展,期望能诠释中国何以能成为转镜式超高速摄影技术的强国。

关键词：高速摄影时空信息量时间信息量分幅摄影扫描摄影等待型同步型转镜式成像原理

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Three-layer phosphorene-metal interfaces

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Nano Research 2018年第2期11卷 707-721页

作者： Xiuying Zhang Yuanyuan Pan Meng Ye Ruge Quhe Yangyang Wang Ying Guo Han Zhang Yang Dan Zhigang Song jingzhen li Jinbo Yang Wanlin Guo Jing Lu State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing China State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing China Nanophotonics and Optoelectronics Research Center Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing China School of Physics and Telecommunication Engineering Shaanxi Sci-Tech University Hanzhong China Collaborative Innovation Center of Quantum Matter Beijing China Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education Nanjing University of Aeronautics and Astronautics Nanjing China

Phosphorene has attracted much attention recently as an alternative channel material in nanoscale electronic and optoelectronic devices due to its high carrier mobility and tunable direct bandgap. Compared with monolayer （ML） phosphorene, few-layer （FL） phosphorene is easier to prepare, is more stable in experiments, and is expected to form a smaller Schottky barrier height （SBH） at the phosphorene-metal interface. Using ab initio electronic structure calculations and quantum transport simulations, we perform a systematic study of the interfacial properties of three-layer （3L） phosphorene field effect transistors （FETs） contacted with several common metals （A1, Ag, Au, Cu, Ti, Cr, Ni, and Pd） for the first time. The SBHs obtained in the vertical direction from projecting the band structures of the 3L phosphorene-metal systems to the left bilayer （2L） phosphorenes are comparable with those obtained in the lateral direction from the quantum transport simulations for 2L phosphorene FETs. The quantum transport simulations for the 3L phosphorene FETs show that 3L phosphorene forms n-type Schottky contacts with electron SBHs of 0.16 and 0.28 eV in the lateral direction, when Ag and Cu are used as electrodes, respectivel~ and p-type Schottky contacts with hole SBHs of 0.05, 0.11, 0.20, 0.30, 0.30, and 0.31 eV in the lateral direction when Cr, Pd, Ni, Ti, AI, and Au are used as electrodes, respectively. The calculated polarity and SBHs of the 3L phosphorene FETs are generally in agreement with the available experiments.

关键词： three-layer phosphorene interfacial properties Schottky barrier height density functional theorquantum transportsimulation

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