检索结果-南通市图书馆

Absorption and emission modulation in a MoS2–GaN（0001） heterostructure by interface phonon–exciton coupling

Photonics Research 2019年第12期7卷 1511-1520页

作者： YUBA POUDEL jagoda slawinska PRIYA GOPAL SAIRAMAN SEETHARAMAN ZACHARIAH HENNIGHAUSEN SWASTIK KAR FRANCIS D'SOUZA MARCO BUONGIORNO NARDELLI ARUP NEOGI Department of Physics University of North TexasDentonTexas 76203USA Department of Chemistry University of North TexasDentonTexas 76203USA Department of Physics Northeastern UniversityBostonMassachusetts 02115USA

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides(TMDs)interfaced to gallium nitride(Ga N)are excellent material systems to realize broadband light absorbers and emitters due to their close proximity in the lattice *** surface properties of a polar semiconductor such as Ga N are dominated by interface phonons,and thus the optical properties of the vertical heterostructure are influenced by the coupling of these carriers with *** activation of different Raman modes in the heterostructure caused by the coupling between interfacial phonons and optically generated carriers in a monolayer MoS_2–Ga N(0001)heterostructure is *** excitonic states in MoS_2 are close to the interband energy state of intraband defect state of Ga *** functional theory(DFT)calculations are performed to determine the band alignment of the interface and revealed a type-I *** close proximity of the energy levels and the excitonic states in the semiconductors and the coupling of the electronic states with phonons result in the modification of carrier relaxation *** of the excitonic absorption states in MoS_2 is measured by transient optical pump-probe spectroscopy and the change in emission properties of both semiconductors is measured by steady-state photoluminescence(PL)emission *** is significant red-shift of the C excitonic band and faster dephasing of carriers in MoS_***,optical excitation at energy higher than the bandgap of both semiconductors slows down the dephasing of carriers and energy exchange at the *** and blue-shifted PL emission is observed in MoS_*** N band-edge emission is reduced in intensity at room temperature due to increased phonon-induced scattering of carriers in the Ga N *** results demonstrate the relevance of interface coupling between the semiconductors for the development of optical and electronic applications.

关键词： spectroscopy. coupling interface

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：